IRFML8244TRPBF - 25V 5.8A N-Ch MOSFET, 24mOhm | Infineon
部品番号: IRFML8244TRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.55 | $0.55 |
| 10 | $0.46 | $4.60 |
| 100 | $0.32 | $32.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
| 3,000 | $0.15 | $450.00 |
IRFML8244TRPBF 概要
What is an N-channel MOSFET? An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switch whose majority carriers are electrons. Within the broader semiconductor taxonomy it sits in the discrete transistors -> MOSFETs -> power MOSFETs -> N-channel enhancement-mode MOSFETs branch. MOSFETs are the dominant switching element in modern DC-DC converters, motor drivers, and load switches because they switch fast, dissipate little power in the on-state, and require only a voltage on the gate (no continuous gate current).
Key features of the IRFML8244TRPBF include a logic-level-capable gate (RDS(on) is fully enhanced at VGS=4.5V typical), a low threshold voltage for direct microcontroller GPIO drive, a typical Qg of 5.4 nC that keeps gate-drive losses small at high switching frequencies, and an industry-standard SOT-23 pinout that drops onto existing layouts. The device is MSL1 (consumer-grade moisture sensitivity) and is qualified for industrial and consumer switching applications.
The IRFML8244TRPBF uses Infineon's HEXFET power MOSFET cell geometry. This generation focuses on reducing FOM (figure of merit = RDS(on) x Qg) which directly controls conduction plus switching loss. The 24 mOhm RDS(on) at 10V VGS translates into only about 0.14 W conduction loss at 2.4 A, so the part can drive moderate loads continuously in a SOT-23 footprint without exceeding its 1.25 W power dissipation limit.
Typical applications include high-side load switching in USB Type-C power delivery, DC-DC converter synchronous rectifiers, battery protection and charging circuits in single-cell Li-ion packs, low-voltage motor and solenoid drivers, and small-signal analog switches for instrumentation. The wide VGS rating of +/-20V also makes it suitable for hot-swap and inrush-limited rails.
When designing with this part, observe the SOA carefully: at 5.8A the part is at its thermal limit in SOT-23 and must be operated below approximately 3A continuously without an additional copper pour on the drain pad. Gate drive should swing at least 4.5V for full enhancement, and a gate-source pull-down resistor is recommended to prevent accidental turn-on during MCU reset.
This page synthesizes authorized distributor pricing, drop-in alternatives, application notes, and practical design notes not aggregated on any single manufacturer or distributor page, giving engineers a one-stop reference for selecting, sourcing, and designing with the IRFML8244TRPBF.
ドロップイン代替品: IRFML8244TRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRFML8244TRPBF （同一形状・フットプリント） — 相違点: Package, Technology, Drain-to-Source Voltage (VDS), MSL Level, RoHS Status.
クイック比較ツール — 並列比較する代替部品を選択:
IRFML8244TRPBF
✅ ドロップイン✓ 在庫あり
$0.15 / 個
データシートを見る →IRLML6344TRPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR120NTRPBF
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.26 / 個
データシートを見る →AO3400A
✅ ドロップイン📋 参考代替品（カタログ未掲載）
DMG2302UX-7
✅ ドロップイン📋 参考代替品（カタログ未掲載）
SI2302CDS-T1-GE3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSS138IXTSA1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFML8244TRPBF 最大定格＆電気的特性
| トランジスタタイプ | N-Channel MOSFET |
| Technology | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) | 5.8 A |
| Gate-to-Source Voltage (VGS) max | +/- 20 V |
| RDS(on) max @ VGS=10V | 24 mOhm |
| Total Gate Charge (Qg) | 5.4 nC |
| Power Dissipation (PD) max | 1.25 W (Ta) |
| 動作温度範囲 | -55 C to +150 C (junction) |
| パッケージ | SOT-23-3 (TO-236-3, SC-59) |
| 実装タイプ | Surface Mount |
| MSLレベル | MSL1 |
| Pin Configuration | Industry-standard SOT-23 pinout (G-D-S) |
| RoHS ステータス | Compliant (Pb-free, halogen-free) |
| Qualification | Consumer grade |
IRFML8244TRPBF ピン構成
| ピン 1 | Gate (G) — Gate input - voltage controls channel conduction; drive 4.5V-10V for full enhancement |
| ピン 2 | Drain (D) — Drain - connected to the load; tab is internally connected to drain and serves as thermal pad |
| ピン 3 | Source (S) — Source - usually tied to circuit ground (low-side) or load return |
IRFML8244 安全動作領域 (estimated envelope)
主な用途
IRFML8244TRPBF の用途: 6 件s: High-Side Load Switch for USB Type-C, Synchronous Rectifier in DC-DC Buck Converter, Single-Cell Li-Ion Battery Protection, Low-Voltage Solenoid and Relay Driver, Hot-Swap and Inrush-Limited Rail Switch, LED Driver and Backlight Dimming Switch.
High-Side Load Switch for USB Type-C
The IRFML8244TRPBF fits USB Type-C VBUS load-switching applications because its 25V VDS exceeds the 20V USB-PD maximum, its 5.8A continuous current handles 5V/3A standard Type-C, and the 24 mOhm RDS(on) at 5V gate drive limits conduction loss to about 0.18W at 3A (well within SOT-23 thermal budget). With 5.4 nC Qg, the gate can be switched directly from a Type-C controller GPIO without an external gate driver, simplifying the BOM. The IR MOSFET technology gives clean switching with low ringing, important for Type-C hot-plug events where transient suppression matters.
おすすめ
Synchronous Rectifier in DC-DC Buck Converter
In a low-voltage buck converter the IRFML8244TRPBF serves as the low-side synchronous rectifier (SR) where its 24 mOhm RDS(on) at 10V gate drive competes favorably with Schottky diode losses at switching frequencies up to 1 MHz. The 5.4 nC total gate charge keeps gate-drive losses low (P_gate = Qg x Vg x fsw = 5.4 nC x 10V x 1 MHz = 0.054 W), and the 25V VDS provides ample margin above 5V and 12V point-of-load rails. Body-diode reverse recovery is acceptable for frequencies below 500 kHz in continuous-conduction mode.
おすすめ
Single-Cell Li-Ion Battery Protection
For single-cell Li-ion battery pack protection (3.7V nominal, 4.2V max), the IRFML8244TRPBF's 25V VDS rating provides 6x safety margin above the battery's maximum voltage, eliminating avalanche risk during load-dump transients. The 5.8A current rating covers most single-cell discharge paths (1C-3C for typical 18650 cells), and the 24 mOhm RDS(on) keeps voltage drop during discharge under 100 mV at 4A - critical for accurate fuel gauging. The SOT-23 footprint saves PCB area in space-constrained pack designs, and Infineon's HEXFET technology gives robust avalanche energy ratings for hot-plug events.
おすすめ
Low-Voltage Solenoid and Relay Driver
The IRFML8244TRPBF drives small 5V-12V solenoids and relays in industrial and appliance applications. At 12V VDS supply, the 25V rating leaves 13V of transient headroom for inductive kick (kickback voltage = -L x di/dt), but a flyback diode is still mandatory. With 5.8A continuous current and 24 mOhm RDS(on), it switches most signal relays and small latching solenoids directly from a microcontroller GPIO through a gate resistor. The HEXFET die is rated for avalanche energy, providing some margin if the flyback diode is forgotten during prototyping.
おすすめ
Hot-Swap and Inrush-Limited Rail Switch
In 5V and 12V hot-swap circuits where a board must be safely inserted into a live backplane, the IRFML8244TRPBF limits inrush current by ramping its gate with an RC network (dV/dt controlled turn-on). The 25V VDS rating covers 12V rails with adequate transient margin, the 5.8A current rating handles typical board-level loads, and the 24 mOhm RDS(on) keeps steady-state voltage drop manageable. The SOT-23 package is small enough for per-rail switching on densely populated boards. Hot-swap controllers like the LTC4215 or TPS2490 can drive the gate directly.
おすすめ
LED Driver and Backlight Dimming Switch
In LED backlight and indicator driver circuits, the IRFML8244TRPBF acts as a low-side PWM switch for brightness control. The 5.4 nC Qg enables PWM dimming frequencies up to 50 kHz without significant gate-drive loss, and the 24 mOhm RDS(on) keeps the LED current sense voltage drop small. With 5.8A continuous current it can drive LED strings up to about 1.5A per channel (parallel strings). The fast switching transition (typical 10-20 ns) minimizes switching loss, important for high-frequency PWM dimming where audible noise from the inductor must be avoided.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRFML8244TRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRLML6344TRPBF | IRFR120NTRPBF | AO3400A | DMG2302UX-7 | SI2302CDS-T1-GE3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Alpha & Omega Semiconductor | Diodes Incorporated | Vishay Intertechnology |
| Package | SOT-23-3 | SOT-23-3 - same | DPAK - different | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Drain-to-Source Voltage (VDS) | 25 V | 30 V | 100 V | 30 V | 20 V | 20 V |
| Continuous Drain Current (ID) | 5.8 A | 5 A | 9.4 A | 5.7 A | 4.2 A | 2.6 A |
| RDS(on) max @ VGS=10V | 24 mOhm | 29 mOhm | 210 mOhm | 24 mOhm | 33 mOhm | 42 mOhm |
| Gate Threshold Voltage (VGS(th)) | 1.0 V typical | 0.7 V (logic-level) | 2.0 V | 1.4 V | 0.7 V (logic-level) | 0.7 V (logic-level) |
| Power Dissipation (PD) | 1.25 W | 1.3 W | 48 W (DPAK) | 1.4 W | 1.25 W | 0.96 W |
主な差別化要因
- Higher continuous current rating than competing SOT-23 N-channel MOSFETs （vs AO3400A)
- Lower RDS(on) at 10V gate drive （vs DMG2302UX-7)
- Industry-leading Infineon HEXFET reliability and supply chain （vs SI2302CDS-T1-GE3)
設計ノート
The SOT-23-3 package has a thermal resistance of approximately 100 C/W junction-to-ambient on a standard JEDEC test board. At 5.8A continuous current and RDS(on)=24 mOhm, conduction loss is P=I^2 x RDS(on) = 5.8^2 x 0.024 = 0.81 W, which gives a junction temperature rise of approximately 81 C above ambient. Without a substantial copper pour on the drain tab, continuous current must be limited to approximately 2.5-3A to keep Tj below 150 C. Add 100-200 mm^2 of 1 oz copper on the drain pad for higher continuous current.
SOT-23-3 PCB layout best practice: (1) Place the gate resistor (typically 10-100 ohm) within 5 mm of the gate pin to limit ringing. (2) Use a 10 kohm pull-down resistor from gate to source to prevent accidental turn-on during MCU reset or floating-GS events. (3) Connect the drain tab to a copper pour that is at least 2x the package footprint area for adequate thermal dissipation. (4) Keep source and drain traces short and wide to minimize parasitic inductance that causes voltage transients during switching.
Three common pitfalls when designing with the IRFML8244TRPBF: (1) Driving the gate from 3.3V logic - the VGS(th) is around 1.0V but full enhancement requires at least 4.5V for guaranteed RDS(on); at 3.3V drive the on-resistance can be 1.5-2x higher than specified. (2) Forgetting the gate-source pull-down resistor - without it the MOSFET can partially turn on during MCU reset when the GPIO is in high-impedance state. (3) Exceeding the avalanche energy rating with inductive loads - always include a flyback diode across inductive loads like solenoids, relays, and motors.
Estimated: gate-drive loop inductance must be minimized. For switching frequencies above 100 kHz, keep the gate driver loop (gate resistor -> gate pin -> source pin -> ground return -> driver ground) under 10 mm total path length to avoid gate-drive ringing and false triggering. Place a 1 nF ceramic bypass capacitor directly across gate-to-source pins if the gate trace is longer than 20 mm, to shunt high-frequency noise that could cause dv/dt-induced turn-on.
コンプライアンス情報
RoHS compliant per Infineon datasheet - 'Pb-free, no bromide, no halogen'. MSL1 per JEDEC J-STD-020. Consumer-grade qualification (not AEC-Q100 qualified).
