BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon
部品番号: BSP315PH6327XTSA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.66 | $6.60 |
| 100 | $0.49 | $49.00 |
| 500 | $0.38 | $190.00 |
| 1,000 | $0.31 | $310.00 |
BSP315PH6327XTSA1 概要
A P-channel MOSFET is a field-effect transistor in which the conducting channel forms when a negative gate-source voltage is applied, allowing the device to source current from a positive supply rail to a load referenced to ground without requiring a charge pump or high-side driver. P-channel MOSFETs sit within the broader hierarchy of MOSFETs -> transistors -> discrete semiconductors -> active components. They are widely used as high-side switches because their gate can be driven directly from a logic-level signal pulled to ground, simplifying bootstrap and level-shifting circuitry that would otherwise be required for an N-channel high-side switch.
Key features of the BSP315PH6327XTSA1 include a low threshold voltage suitable for direct 3.3 V and 5 V logic-level gate drive, low gate charge for fast switching transitions, an avalanche-rated body diode for inductive loads, and RoHS-compliant lead-free PG-SOT223-4 packaging with an exposed drain tab for improved thermal dissipation. The OptiMOS process delivers a strong figure-of-merit (RDS(on) x Qg) that minimizes conduction and switching losses simultaneously.
Technically, the device uses Infineon's planar-cell OptiMOS P-channel technology, which combines a low on-state resistance per unit area with tight parametric distribution for parallel-operation stability. The PG-SOT223-4 footprint exposes the drain tab, allowing the PCB copper pour itself to act as a heatsink and providing a thermal path to the load-side copper.
Typical applications include USB power switching, load management in battery-powered portable electronics, high-side switching in industrial control modules, motor and solenoid reverse-polarity protection, and DC-DC converter synchronous rectifier stages. The wide -60 V rating provides substantial headroom for 12 V and 24 V automotive bus transients.
When designing with this part, ensure that the gate-source voltage does not exceed the ±20 V maximum rating and add a gate-source pull-down resistor to hold the MOSFET off during MCU reset. For switching inductive loads, place a TVS diode or freewheeling clamp across the load to limit drain-voltage spikes within the avalanche rating.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: BSP315PH6327XTSA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: BSP315PH6327XTSA1 （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, Continuous Drain Current (ID), Power Dissipation (PD).
クイック比較ツール — 並列比較する代替部品を選択:
BSP316PH6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.21 / 個
データシートを見る →BSP88H6327XTSA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.21 / 個
データシートを見る →BSL308PEH6327XTSA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.21 / 個
データシートを見る →BSS205NH6327XTSA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.12 / 個
データシートを見る →BSS169H6327XTSA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.15 / 個
データシートを見る →BSD235CH6327XTSA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.12 / 個
データシートを見る →BSP315PH6327XTSA1 最大定格＆電気的特性
| FET Type | P-Channel |
| Technology | OptiMOS (enhancement mode) |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) | -1.17 A (Ta) |
| Power Dissipation (PD) | 1.8 W (Ta) |
| Gate-Source Voltage (VGS) | ±20 V (max) |
| 動作温度範囲 | -55 C to +150 C (junction) |
| パッケージ | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| 実装タイプ | Surface Mount |
| Avalanche Energy Rated | Yes (per datasheet) |
| Lead-Free / RoHS | Yes / Compliant |
| MSLレベル | 1 (per JEDEC J-STD-020) |
BSP315PH6327XTSA1 ピン構成
| ピン 1 | Gate — Gate input; pull to source to disable, drive negative VGS to enable |
| ピン 2 | Drain — Drain connection; tied internally to the exposed tab |
| ピン 3 | Source — Source connection; reference point for VGS |
| ピン 4 | Drain (Tab) — Thermal/electrical drain tab on package back; solder to PCB copper pour |
安全動作領域 (DC)
主な用途
BSP315PH6327XTSA1 の用途: 6 件s: USB VBUS High-Side Power Switch, 12V/24V Industrial Load Switching, Reverse-Polarity Battery Protection, DC-DC Converter Synchronous Rectifier, Portable and Battery-Powered Device Load Management, LED Driver High-Side Switch.
USB VBUS High-Side Power Switch
The BSP315PH6327XTSA1 is well matched to USB VBUS high-side switching because its P-channel enhancement-mode topology allows direct gate drive from a 3.3 V GPIO without a charge pump. With -60 V VDS rating, the device absorbs USB fault transients and inductive kickback from cable harnesses. The SOT-223 exposed tab provides a low thermal resistance path to the copper pour, keeping junction temperature low at typical 500 mA to 1 A USB loads. Source current is drawn through Pin 3 to the load while the drain tab connects to VBUS via a wide copper pour, minimizing voltage drop.
おすすめ
12V/24V Industrial Load Switching
In industrial 24 V control modules, the BSP315PH6327XTSA1 provides robust high-side switching for solenoids, relays, and indicator loads. Its -60 V VDS rating provides 2.5x headroom over a 24 V nominal bus, tolerating load-dump transients common in industrial environments. The device's avalanche-rated body diode safely commutates inductive loads, while the 1.8 W power dissipation envelope supports continuous operation at moderate currents. A gate pull-up resistor to VBUS keeps the switch off during MCU reset, and a TVS clamp protects against inductive kickback above 60 V.
おすすめ
Reverse-Polarity Battery Protection
The BSP315PH6327XTSA1 in a source-follower configuration provides compact reverse-polarity protection for single-cell Li-ion and multi-cell battery packs up to 12 V. When the battery is inserted correctly, the P-channel MOSFET is held off by a pull-up to the source (battery+), and a small NPN or logic signal pulls the gate low to enable load current. On reverse insertion, the gate-source voltage becomes positive, holding the MOSFET firmly off and protecting downstream circuitry. The -60 V rating provides ample margin for battery transient voltages during hot-plug events.
おすすめ
DC-DC Converter Synchronous Rectifier
In low-power buck or boost converters operating from 12 V or 24 V rails, the BSP315PH6327XTSA1 can serve as the synchronous rectifier on the low-voltage side of an isolated flyback topology. Its P-channel configuration simplifies the gate-drive timing relative to N-channel synchronous rectifiers, which require level-shifted gate drive. The low on-state resistance and fast body-diode recovery reduce switching losses and improve converter efficiency at moderate switching frequencies. Ensure the controller's dead-time is properly tuned to prevent shoot-through.
おすすめ
Portable and Battery-Powered Device Load Management
The BSP315PH6327XTSA1 enables per-rail load management in portable electronics such as handheld instruments, wireless sensor nodes, and IoT peripherals. The P-channel topology allows GPIO-controlled power gating to radios, displays, and sensor clusters without a charge pump, saving quiescent current during sleep. Its -60 V rating tolerates USB charging transients and adapter hot-plug events. The SOT-223 footprint with exposed drain tab provides a low-profile thermal solution for compact enclosures where board space is limited.
おすすめ
LED Driver High-Side Switch
In LED driving applications where the LED string anode is tied to a 12 V or 24 V supply rail, the BSP315PH6327XTSA1 enables efficient PWM dimming by switching the high-side return path of the LED string. The P-channel configuration allows the gate to be driven directly from a microcontroller PWM output, eliminating the level-shifter required for an N-channel high-side switch. The -60 V VDS rating provides substantial margin for automotive and industrial LED driver designs, and the avalanche body diode safely commutates the LED string's parasitic inductance during PWM transitions.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BSP315PH6327XTSA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BSP316PH6327XTSA1 | BSP88H6327XTSA1 | BSL308PEH6327XTSA1 | BSS205NH6327XTSA1 | BSS169H6327XTSA1 | BSD235CH6327XTSA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-SOT223-4 | PG-SOT223-4 (same) | PG-SOT89-4 | PG-TSOP-6 | PG-SOT23-3 | PG-SOT23-3 | PG-SOT363-6 (dual) |
| FET Type / Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel (dual) |
| Technology | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS |
主な差別化要因
- Direct logic-level GPIO drive without charge pump （vs N-channel high-side MOSFET)
- SOT-223 exposed tab provides superior thermal performance （vs SOT-23-packaged P-channel MOSFETs (BSS205NH6327XTSA1, BSS169H6327XTSA1))
- Drop-in upgrade path to higher VDS within same footprint （vs Cross-brand SOT-223 P-channel MOSFETs (e.g. Vishay Si2343CDS))
設計ノート
Estimated: at VIN=12V, RDS(on)=0.5 ohm (assumed typical), and ID=1 A continuous, power dissipation is approximately PD = I^2 x RDS(on) = 0.5 W. The SOT-223 package has theta_JA around 62 C/W on a standard JEDEC test board, yielding a junction temperature rise of 31 C above ambient at 0.5 W - well within the 150 C rating. For sustained 1.17 A operation, solder the exposed drain tab to at least 100 mm^2 of 2 oz copper pour to keep junction temperature below 100 C at 40 C ambient.
Route the gate trace away from drain-source switching nodes to minimize dv/dt-induced gate coupling. Keep the gate trace short and place a 10 kohm gate-source resistor close to the gate pin to suppress parasitic oscillation. The exposed drain tab must be soldered to a continuous copper pour; starved thermal vias under the tab dramatically reduce thermal performance and should be filled if top-side cooling is required.
Do not exceed ±20 V on the gate-source pins; transient VGS spikes above 20 V can punch through the gate oxide and permanently damage the MOSFET. For inductive load switching, add a TVS diode or RC snubber across the load to clamp drain-voltage spikes within the -60 V avalanche rating. Do not parallel BSP315PH6327XTSA1 devices without gate-source resistors on each device - mismatched threshold voltages can force unequal current sharing and thermal runaway.
When driving the gate from a microcontroller GPIO, ensure the GPIO can sink adequate current to overcome the gate charge during turn-off - typical Qg for an OptiMOS P-channel at this class is in the single-digit nC range, well within 3.3 V GPIO drive capability. Add a series gate resistor of 10-100 ohm to damp LC ringing between the gate inductance and the MOSFET's Ciss. For PWM dimming above 1 kHz, verify that switching losses (Eoss + Pdrive) remain within the package thermal budget.
コンプライアンス情報
RoHS compliant per Infineon product page. Lead-free PG-SOT223-4 package. Not AEC-Q100 qualified as standard grade; AEC-Q101 automotive variants may be available under different ordering codes.
