IRFML8244TRPBF - 25V 5.8A N-Ch MOSFET, 24mOhm | Infineon
MPN: IRFML8244TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.55 | $0.55 |
| 10 | $0.46 | $4.60 |
| 100 | $0.32 | $32.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
| 3,000 | $0.15 | $450.00 |
Drop-in alternatives for IRFML8244TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFML8244TRPBF
β Drop-Inβ In Stock
$0.15 / Unit
View Datasheet βIRLML6344TRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR120NTRPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.26 / Unit
View Datasheet βAO3400A
β Drop-Inπ Reference alternative (not in catalog)
DMG2302UX-7
β Drop-Inπ Reference alternative (not in catalog)
SI2302CDS-T1-GE3
β Drop-Inπ Reference alternative (not in catalog)
BSS138IXTSA1
β Drop-Inπ Reference alternative (not in catalog)
IRFML8244TRPBF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) | 5.8 A |
| Gate-to-Source Voltage (VGS) max | +/- 20 V |
| RDS(on) max @ VGS=10V | 24 mOhm |
| Total Gate Charge (Qg) | 5.4 nC |
| Power Dissipation (PD) max | 1.25 W (Ta) |
| Operating Temperature Range | -55 C to +150 C (junction) |
| Package | SOT-23-3 (TO-236-3, SC-59) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 |
| Pin Configuration | Industry-standard SOT-23 pinout (G-D-S) |
| RoHS Status | Compliant (Pb-free, halogen-free) |
| Qualification | Consumer grade |
IRFML8244TRPBF Pin Configuration
| Pin 1 | Gate (G) β Gate input - voltage controls channel conduction; drive 4.5V-10V for full enhancement |
| Pin 2 | Drain (D) β Drain - connected to the load; tab is internally connected to drain and serves as thermal pad |
| Pin 3 | Source (S) β Source - usually tied to circuit ground (low-side) or load return |
IRFML8244 Safe Operating Area (estimated envelope)
Typical Applications
IRFML8244TRPBF is suitable for 6 applications: High-Side Load Switch for USB Type-C, Synchronous Rectifier in DC-DC Buck Converter, Single-Cell Li-Ion Battery Protection, Low-Voltage Solenoid and Relay Driver, Hot-Swap and Inrush-Limited Rail Switch, LED Driver and Backlight Dimming Switch.
High-Side Load Switch for USB Type-C
The IRFML8244TRPBF fits USB Type-C VBUS load-switching applications because its 25V VDS exceeds the 20V USB-PD maximum, its 5.8A continuous current handles 5V/3A standard Type-C, and the 24 mOhm RDS(on) at 5V gate drive limits conduction loss to about 0.18W at 3A (well within SOT-23 thermal budget). With 5.4 nC Qg, the gate can be switched directly from a Type-C controller GPIO without an external gate driver, simplifying the BOM. The IR MOSFET technology gives clean switching with low ringing, important for Type-C hot-plug events where transient suppression matters.
Recommended
Synchronous Rectifier in DC-DC Buck Converter
In a low-voltage buck converter the IRFML8244TRPBF serves as the low-side synchronous rectifier (SR) where its 24 mOhm RDS(on) at 10V gate drive competes favorably with Schottky diode losses at switching frequencies up to 1 MHz. The 5.4 nC total gate charge keeps gate-drive losses low (P_gate = Qg x Vg x fsw = 5.4 nC x 10V x 1 MHz = 0.054 W), and the 25V VDS provides ample margin above 5V and 12V point-of-load rails. Body-diode reverse recovery is acceptable for frequencies below 500 kHz in continuous-conduction mode.
Recommended
Single-Cell Li-Ion Battery Protection
For single-cell Li-ion battery pack protection (3.7V nominal, 4.2V max), the IRFML8244TRPBF's 25V VDS rating provides 6x safety margin above the battery's maximum voltage, eliminating avalanche risk during load-dump transients. The 5.8A current rating covers most single-cell discharge paths (1C-3C for typical 18650 cells), and the 24 mOhm RDS(on) keeps voltage drop during discharge under 100 mV at 4A - critical for accurate fuel gauging. The SOT-23 footprint saves PCB area in space-constrained pack designs, and Infineon's HEXFET technology gives robust avalanche energy ratings for hot-plug events.
Recommended
Low-Voltage Solenoid and Relay Driver
The IRFML8244TRPBF drives small 5V-12V solenoids and relays in industrial and appliance applications. At 12V VDS supply, the 25V rating leaves 13V of transient headroom for inductive kick (kickback voltage = -L x di/dt), but a flyback diode is still mandatory. With 5.8A continuous current and 24 mOhm RDS(on), it switches most signal relays and small latching solenoids directly from a microcontroller GPIO through a gate resistor. The HEXFET die is rated for avalanche energy, providing some margin if the flyback diode is forgotten during prototyping.
Recommended
Hot-Swap and Inrush-Limited Rail Switch
In 5V and 12V hot-swap circuits where a board must be safely inserted into a live backplane, the IRFML8244TRPBF limits inrush current by ramping its gate with an RC network (dV/dt controlled turn-on). The 25V VDS rating covers 12V rails with adequate transient margin, the 5.8A current rating handles typical board-level loads, and the 24 mOhm RDS(on) keeps steady-state voltage drop manageable. The SOT-23 package is small enough for per-rail switching on densely populated boards. Hot-swap controllers like the LTC4215 or TPS2490 can drive the gate directly.
Recommended
LED Driver and Backlight Dimming Switch
In LED backlight and indicator driver circuits, the IRFML8244TRPBF acts as a low-side PWM switch for brightness control. The 5.4 nC Qg enables PWM dimming frequencies up to 50 kHz without significant gate-drive loss, and the 24 mOhm RDS(on) keeps the LED current sense voltage drop small. With 5.8A continuous current it can drive LED strings up to about 1.5A per channel (parallel strings). The fast switching transition (typical 10-20 ns) minimizes switching loss, important for high-frequency PWM dimming where audible noise from the inductor must be avoided.
Recommended
Recommended Products Summary
Engineering reference data for IRFML8244TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLML6344TRPBF | IRFR120NTRPBF | AO3400A | DMG2302UX-7 | SI2302CDS-T1-GE3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Alpha & Omega Semiconductor | Diodes Incorporated | Vishay Intertechnology |
| Package | SOT-23-3 | SOT-23-3 - same | DPAK - different | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Drain-to-Source Voltage (VDS) | 25 V | 30 V | 100 V | 30 V | 20 V | 20 V |
| Continuous Drain Current (ID) | 5.8 A | 5 A | 9.4 A | 5.7 A | 4.2 A | 2.6 A |
| RDS(on) max @ VGS=10V | 24 mOhm | 29 mOhm | 210 mOhm | 24 mOhm | 33 mOhm | 42 mOhm |
| Gate Threshold Voltage (VGS(th)) | 1.0 V typical | 0.7 V (logic-level) | 2.0 V | 1.4 V | 0.7 V (logic-level) | 0.7 V (logic-level) |
| Total Gate Charge (Qg) | 5.4 nC | 4.9 nC | 9.2 nC | [DATA_NEEDED] | 4.5 nC | [DATA_NEEDED] |
| Power Dissipation (PD) | 1.25 W | 1.3 W | 48 W (DPAK) | 1.4 W | 1.25 W | 0.96 W |
| Unit Price @ 1000 qty | $0.19 | [DATA_NEEDED] | $0.40 | $0.10 | $0.08 | $0.12 |
Key Differentiators
- Higher continuous current rating than competing SOT-23 N-channel MOSFETs (vs AO3400A)
- Lower RDS(on) at 10V gate drive (vs DMG2302UX-7)
- Industry-leading Infineon HEXFET reliability and supply chain (vs SI2302CDS-T1-GE3)
Design Notes
The SOT-23-3 package has a thermal resistance of approximately 100 C/W junction-to-ambient on a standard JEDEC test board. At 5.8A continuous current and RDS(on)=24 mOhm, conduction loss is P=I^2 x RDS(on) = 5.8^2 x 0.024 = 0.81 W, which gives a junction temperature rise of approximately 81 C above ambient. Without a substantial copper pour on the drain tab, continuous current must be limited to approximately 2.5-3A to keep Tj below 150 C. Add 100-200 mm^2 of 1 oz copper on the drain pad for higher continuous current.
SOT-23-3 PCB layout best practice: (1) Place the gate resistor (typically 10-100 ohm) within 5 mm of the gate pin to limit ringing. (2) Use a 10 kohm pull-down resistor from gate to source to prevent accidental turn-on during MCU reset or floating-GS events. (3) Connect the drain tab to a copper pour that is at least 2x the package footprint area for adequate thermal dissipation. (4) Keep source and drain traces short and wide to minimize parasitic inductance that causes voltage transients during switching.
Three common pitfalls when designing with the IRFML8244TRPBF: (1) Driving the gate from 3.3V logic - the VGS(th) is around 1.0V but full enhancement requires at least 4.5V for guaranteed RDS(on); at 3.3V drive the on-resistance can be 1.5-2x higher than specified. (2) Forgetting the gate-source pull-down resistor - without it the MOSFET can partially turn on during MCU reset when the GPIO is in high-impedance state. (3) Exceeding the avalanche energy rating with inductive loads - always include a flyback diode across inductive loads like solenoids, relays, and motors.
Estimated: gate-drive loop inductance must be minimized. For switching frequencies above 100 kHz, keep the gate driver loop (gate resistor -> gate pin -> source pin -> ground return -> driver ground) under 10 mm total path length to avoid gate-drive ringing and false triggering. Place a 1 nF ceramic bypass capacitor directly across gate-to-source pins if the gate trace is longer than 20 mm, to shunt high-frequency noise that could cause dv/dt-induced turn-on.
Compliance Information
RoHS compliant per Infineon datasheet - 'Pb-free, no bromide, no halogen'. MSL1 per JEDEC J-STD-020. Consumer-grade qualification (not AEC-Q100 qualified).
