IRLML2060TRPBF - 60V N-Ch MOSFET, 1.2A, SOT-23 | Infineon
部品番号: IRLML2060TRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.35 | $3.50 |
| 100 | $0.24 | $24.00 |
| 500 | $0.19 | $95.00 |
| 1,000 | $0.16 | $160.00 |
| 3,000 | $0.13 | $390.00 |
IRLML2060TRPBF 概要
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage creates an inversion layer that conducts electrons between the source and drain terminals. Within the broader taxonomy, the IRLML2060 sits in the small-signal power MOSFET category, which bridges discrete transistors and high-current power MOSFETs. It is commonly used as a load switch, level shifter, or low-side gate driver in space-constrained designs.
Key specifications include VDS maximum of 60 V, VGS range of +/- 12 V (logic-level VGS(th) ~1.8 V), continuous ID of 1.2 A at TA=25C, pulsed ID of 4.8 A, and a maximum power dissipation of 1.25 W on a standard 1 oz copper FR-4 PCB. The SOT-23 (Micro3) footprint conforms to JEDEC TO-236AB and is compatible with industry-standard surface-mount assembly lines. Typical R_DS(on) of 480 mOhm at VGS=10 V and 650 mOhm at VGS=4.5 V provides flexibility across 5 V and 3.3 V logic rails.
The IRLML2060 uses Infineon's IR HEXFET technology, which combines a trench-gate cell structure with optimized body diode characteristics for low reverse recovery charge (Qrr). This makes the part well suited to high-frequency PWM applications and synchronous rectification in small DC-DC converters up to several hundred kHz. The device is rated for lead-free reflow soldering per IPC/JEDEC J-STD-020 and carries MSL1 moisture sensitivity.
Typical applications include battery protection circuits in portable electronics, USB load switches, level shifters between 1.8 V MCUs and 5 V peripherals, DC-DC converter synchronous rectifiers, LED backlight drivers, and power-rail hot-swap switches. The 60 V VDS rating provides ample margin for 12 V and 24 V industrial rail switching.
When designing with this part, observe the thermal resistance of 100 C/W (junction-to-ambient on a 1 in^2 copper pad) and ensure peak drain current stays below the pulsed rating. A gate resistor of 10-100 ohm is recommended to control ringing on the gate node, and a 100 kohm gate-source pull-down keeps the MOSFET off during MCU reset events.
This page synthesizes distributor pricing, drop-in SOT-23 alternatives, and practical PCB layout notes not collected in any single source.
ドロップイン代替品: IRLML2060TRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRLML2060TRPBF （同一形状・フットプリント） — 相違点: Package, Technology, Qualification, Continuous Drain Current (ID) at TA=25C, Operating Temperature Range.
クイック比較ツール — 並列比較する代替部品を選択:
IRFML8244TRPBF
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.15 / 個
データシートを見る →IRLML6402TRPBF
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IRLML6344TRPBF
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
BSS123IXTSA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.11 / 個
データシートを見る →NTR4101PT1G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
Si2302CDS-T1-GE3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRLML2060TRPBF 最大定格＆電気的特性
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A |
| Pulsed Drain Current (IDM) | 4.8 A |
| Gate-to-Source Voltage (VGS) max | +/- 12 V |
| Gate Threshold Voltage (VGS(th)) | 1.8 V typical |
| RDS(on) max at VGS=10V | 480 mOhm |
| RDS(on) max at VGS=4.5V | 650 mOhm (typical 580 mOhm) |
| Power Dissipation (PD) at TA=25C | 1.25 W |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | 100 C/W |
| 動作接合温度 | -55C to +150C |
| パッケージ | SOT-23 (Micro3, 3-pin) |
| 実装タイプ | Surface Mount |
| Technology | IR HEXFET (Trench Gate) |
| RoHS ステータス | Compliant |
| ハロゲンフリー | Yes |
| MSLレベル | MSL1 |
IRLML2060TRPBF ピン構成
| ピン 1 | GATE — Gate control input; drive with logic-level signal referenced to source |
| ピン 2 | SOURCE — Source terminal; typically connected to ground for low-side switching |
| ピン 3 | DRAIN — Drain terminal; connected to load for low-side switching |
安全動作領域 (DC, TA=25C, JEDEC 1 in^2 copper)
主な用途
IRLML2060TRPBF の用途: 7 件s: USB Load Switch and VBUS Control, Battery Protection in Portable Electronics, Level Shifter for 3.3V to 5V Logic, Synchronous Rectifier in Small DC-DC Converters, LED Backlight Driver Switch, Industrial 24V Solenoid and Relay Driver, Hot-Swap and Inrush Limiting Switch.
USB Load Switch and VBUS Control
The IRLML2060TRPBF is well suited as a low-side load switch on a 5 V VBUS rail. With RDS(on) of 480 mOhm at VGS=10V, conduction loss at 1 A load is only 480 mW, well within the 1.25 W dissipation rating. Its 60 V VDS rating provides significant margin above 5 V, suppressing inductive transients from cabling. The SOT-23 footprint enables integration in compact dongles and phone accessories. Designers should add a 100 kohm gate pull-down to ensure the switch is off during MCU reset. Compared with a 2N7002, the IRLML2060 cuts conduction loss by more than 90% at the same drive voltage.
おすすめ
Battery Protection in Portable Electronics
In single-cell Li-ion battery packs (4.2 V max), the IRLML2060TRPBF serves as a secondary protection FET or as a low-side load-disconnect switch. The 60 V VDS rating exceeds the cell voltage with large headroom for transient suppression. However, the 480 mOhm on-resistance makes it better suited for low-current analog rails (sensor power, LED backlight) rather than the high-current main discharge path, where a lower-RDS(on) part such as IRLML6344 (35 mOhm) is preferred. The SOT-23 footprint is compatible with high-density battery management PCB layouts.
おすすめ
Level Shifter for 3.3V to 5V Logic
The IRLML2060TRPBF is widely used as a level shifter between a 1.8 V or 3.3 V MCU GPIO and a 5 V peripheral. A pull-up resistor to 5 V on the drain and the MCU driving the gate gives clean bi-directional level translation with under 1 ns propagation delay. With VGS(th) around 1.8 V, the device turns fully on with most 3.3 V GPIO outputs. The 60 V VDS and +/- 12 V VGS ratings tolerate wide supply transients without damage. In I2C bus applications, two IRLML2060s create a discrete level shifter for clock and data lines.
おすすめ
Synchronous Rectifier in Small DC-DC Converters
The IRLML2060TRPBF can serve as a synchronous rectifier in small buck converters operating below 500 kHz with load currents up to about 0.5 A. Its HEXFET technology delivers low Qrr and low Qg, minimizing switching loss. At VIN=12 V and VOUT=3.3 V, the 60 V VDS rating absorbs the switching node ringing without avalanche breakdown. For higher currents (>1 A) the IRLML6344TRPBF (35 mOhm) is a better fit because conduction loss dominates at those levels. The SOT-23 footprint is the industry-standard pinout for synchronous FETs in small point-of-load converters.
おすすめ
LED Backlight Driver Switch
In LED backlight circuits for LCD panels, the IRLML2060TRPBF operates as a low-side PWM switch running at 200 Hz to 2 kHz. The device drives 20 mA to 100 mA per LED string with conduction loss under 50 mW at 100 mA, well within the 1.25 W dissipation limit. Its fast switching speed (turn-off < 30 ns) supports high-resolution PWM dimming without flicker. The SOT-23 footprint enables dense LED driver layouts. For multi-string applications above 200 mA per string, parallel multiple IRLML2060 devices or upgrade to a lower-RDS(on) part such as IRLML6344.
おすすめ
Industrial 24V Solenoid and Relay Driver
The IRLML2060TRPBF is rated for switching 24 V industrial rails because the 60 V VDS rating provides 2.5x headroom over the supply, accommodating inductive kickback from solenoid coils. With 1.2 A continuous current, it drives most small signal relays, pilot solenoids, and valve actuators. A freewheeling diode across the inductive load is still recommended to clamp flyback voltage. The SOT-23 footprint supports compact PLC I/O modules. For higher-current inductive loads above 1 A, choose a SOT-223 or DPAK device such as IPD30N10S3L-34 for adequate thermal dissipation.
おすすめ
Hot-Swap and Inrush Limiting Switch
The IRLML2060TRPBF serves as a low-side hot-swap switch on 5 V and 12 V power rails where peak inrush current stays below the 4.8 A pulsed rating. By ramping the gate voltage slowly with an RC network, the device limits inrush current into large bulk capacitors. The 60 V VDS rating absorbs any inductive kickback from the load cable. Add a gate resistor of 10-100 ohm to control ringing and a 100 kohm gate-to-source pull-down to keep the switch off during controller reset. For high-current rails (>2 A continuous), use a lower-RDS(on) part such as IRLML6344 to reduce thermal stress.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRLML2060TRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRFML8244TRPBF | IRLML6402TRPBF | IRLML6344TRPBF | BSS123IXTSA1 | NTR4101PT1G | Si2302CDS-T1-GE3 |
|---|---|---|---|---|---|---|---|
| Package | SOT-23 (Micro3) | SOT-23 (Micro3) - same | SOT-23 (Micro3) - same | SOT-23 (Micro3) - same | SOT-23 (Micro3) - same | SOT-23 (Micro3) - same | SOT-23 (Micro3) - same |
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) | onsemi (different) | Vishay Intertechnology (different) |
| VDS max (V) | 60 V | 40 V | 20 V | 30 V | 100 V | 20 V | 20 V |
| Channel Polarity | N-channel | N-channel | P-channel | N-channel | N-channel | N-channel | N-channel |
| Continuous Drain Current (A, TA=25C) | 1.2 A | 8.4 A | -2.4 A (P-ch) | 5.0 A | 0.17 A | 2.4 A | 2.6 A |
| RDS(on) max at VGS=4.5V (mOhm) | 650 mOhm | 35 mOhm | 65 mOhm | 35 mOhm | 10 Ohm at 10V | 78 mOhm | 60 mOhm |
| RDS(on) max at VGS=10V (mOhm) | 480 mOhm | 35 mOhm | 45 mOhm | 29 mOhm | 6 Ohm | 65 mOhm | 50 mOhm |
| Power Dissipation (W, TA=25C) | 1.25 W | 1.4 W | 1.3 W | 1.4 W | 0.5 W | 1.0 W | 1.25 W |
| Qty-1 Unit Price (USD) | 0.42 | 0.55 | 0.38 | 0.40 | 0.18 | 0.45 | 0.48 |
主な差別化要因
- Wide VDS headroom in standard SOT-23 footprint （vs IRLML6344TRPBF)
- Higher continuous drain current than legacy 2N7002 （vs BSS123IXTSA1)
- Lower on-resistance per dollar at moderate voltage （vs Si2302CDS-T1-GE3)
設計ノート
Estimated: at VGS=4.5V, ID=1.0 A, RDS(on) is approximately 580 mOhm (typical). Power dissipation P=I^2*R = 1.0^2 * 0.58 = 0.58 W. Junction temperature rise above ambient = P * RthetaJA = 0.58 W * 100 C/W = 58C. At TA=60C, TJ = 118C, comfortably below the 150C maximum. For continuous operation above 1 A, provide at least 1 square inch of copper pour under the drain pad to keep RthetaJA near 100 C/W; without it, the part can reach 150C at just 0.8 A continuous.
Route the source pin directly to a low-impedance ground plane with the shortest possible trace. In SOT-23 layouts the source pin (pin 2) sits between the gate (pin 1) and drain (pin 3); a long source trace adds parasitic inductance that degrades switching performance. Place a 10-100 ohm gate resistor in series with the gate to damp the LC resonance between gate capacitance and trace inductance. For switching frequencies above 100 kHz, keep the gate drive loop area under 5 mm^2 to control ringing and EMI.
Do not exceed VGS of +/- 12V; even brief transients beyond 20V will permanently damage the gate oxide. Always add a 100 kohm gate-to-source pull-down resistor to keep the MOSFET off during MCU reset or brown-out events when the gate driver is high impedance. For inductive load switching (relays, solenoids, motors), always add a freewheeling diode across the inductor to clamp flyback voltage and prevent avalanche breakdown of VDS. Verify continuous drain current derating at your operating ambient temperature, not just at 25C.
コンプライアンス情報
RoHS compliant per Infineon datasheet. Lead-free reflow soldering per IPC/JEDEC J-STD-020. MSL1 moisture sensitivity. Not AEC-Q100 qualified - not recommended for automotive safety-critical applications.
