IRLML5103TRPBF - 30V 760mA P-Channel MOSFET | Infineon
部品番号: IRLML5103TRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.0525 | $0.05 |
| 10 | $0.0525 | $0.53 |
| 100 | $0.0525 | $5.25 |
| 500 | $0.0525 | $26.25 |
| 1,000 | $0.0525 | $52.50 |
IRLML5103TRPBF 概要
A P-channel MOSFET is a voltage-controlled majority-carrier device in which a negative gate-source voltage creates the conducting channel. It belongs to the power MOSFET hierarchy and is commonly used as a low-side or high-side switch, a load-disconnect device, or a reverse-polarity protection element. In a high-side configuration, the P-channel device can hold a load off or on with a relatively small gate-drive swing, but the gate voltage must be controlled carefully to avoid exceeding the device's gate rating.
The verified specifications identify a maximum on-resistance of 600 mOhm and a gate charge of 3.4 nC according to the Mouser listing. The part is described as a P-channel 30 V, 760 mA device in a SOT-23 footprint. The Micro3/SOT-23 package is important for applications where board area is constrained, but its thermal capability must be considered when continuous dissipation approaches 540 mW. The device is also described as RoHS compliant in the supplied search data.
IRLML5103TRPBF is based on IR MOSFET technology, and the supplied product-page information identifies a P-channel device with a maximum VDS of -30 V and maximum RDS(on) of 600 mOhm. Its low on-resistance can reduce conduction loss compared with a higher-resistance small-signal MOSFET, while the P-channel arrangement can simplify high-side load switching. The exact threshold voltage, safe operating area, transient current capability, and recommended gate-drive conditions are not included in the supplied verified data and therefore require datasheet review before final design release.
Typical applications include battery-powered equipment, portable-device power management, load switching, power-path control, and protection or isolation circuits. The 30 V rating provides useful margin for common low-voltage rails, while the 760 mA rating makes the part appropriate for modest loads rather than high-current power conversion. A compact SOT-23 footprint supports space-constrained designs, but thermal performance, copper area, switching frequency, and gate-drive impedance remain important system-level considerations.
When designing with IRLML5103TRPBF, confirm the actual load current, ambient temperature, gate-source voltage, and transient conditions against the manufacturer datasheet. Use a gate resistor and appropriate gate clamping or pulldown strategy where required, and calculate conduction loss from I²R using the verified 600 mOhm maximum on-resistance. Do not substitute a larger package or a different pinout without redesigning the PCB.
This product page combines verified distributor specifications, the official Infineon datasheet link, package and pinout information, practical switching considerations, and same-package comparison guidance. It is intended to help engineers select the IRLML5103TRPBF while clearly separating verified values from parameters that still require datasheet confirmation.
ドロップイン代替品: IRLML5103TRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRLML5103TRPBF （同一形状・フットプリント） — 相違点: Package, Polarity, Technology, Continuous Drain Current (ID), FET Type.
クイック比較ツール — 並列比較する代替部品を選択:
IRLML5103TRPBF-1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRLML6346TRPBF
✅ ドロップイン✓ 在庫あり
$0.18 / 個
データシートを見る →IRLML6302TRPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSS84PH6327XTSA2
✅ ドロップイン✓ 在庫あり
$0.1 / 個
データシートを見る →BSS138NH6327XTSA2
✅ ドロップイン✓ 在庫あり
$0.15 / 個
データシートを見る →IRLML5103TRPBF 最大定格＆電気的特性
| トランジスタタイプ | P-Channel MOSFET |
| Maximum Drain-Source Voltage | 30 V |
| Continuous Drain Current | 760 mA at Ta |
| Power Dissipation | 540 mW at Ta |
| Maximum On-Resistance | 600 mOhm |
| Gate Charge | 3.4 nC |
| Technology | IR MOSFET |
| パッケージ | Micro3/SOT-23 |
| 実装タイプ | Surface Mount |
| Polarity | P-Channel |
| Drain-Source Voltage Rating | -30 V |
| Channel Mode | Enhancement |
| 動作温度 | 175 C |
| RoHS ステータス | Compliant |
| Footprint | SOT-23 |
IRLML5103TRPBF ピン構成
| ピン 1 | Gate — MOSFET gate control terminal |
| ピン 2 | Source — P-channel MOSFET source terminal |
| ピン 3 | Drain — P-channel MOSFET drain terminal |
主な用途
IRLML5103TRPBF の用途: 6 件s: Battery-Powered Load Switching, Portable Device Power Management, Power-Path Isolation, Reverse-Polarity Protection, Sensor and Peripheral Rail Control, Low-Power DC-DC Control.
Battery-Powered Load Switching
IRLML5103TRPBF fits compact battery-powered load switching where a P-channel MOSFET can control a positive supply rail. The verified 30 V drain-source rating and 760 mA Ta drain-current rating support modest loads such as sensors, low-power modules, and peripheral circuits. Its Micro3/SOT-23 package saves board area, while the 600 mOhm maximum on-resistance must be included in the conduction-loss estimate. The gate should be driven relative to the source, and a controlled pulldown or clamp can help prevent unintended turn-on during battery transients.
おすすめ
Portable Device Power Management
IRLML5103TRPBF is appropriate for power-path and rail-enable functions in portable equipment when the load stays below the verified 760 mA Ta rating. The P-channel arrangement can support high-side disconnect or controlled startup, while the 3.4 nC listed gate charge keeps moderate-frequency switching practical. The 600 mOhm maximum on-resistance contributes conduction loss, so calculate I²R loss for the intended current. Confirm the gate-source limits, transient protection, and PCB thermal conditions from the official Infineon datasheet before production release.
おすすめ
Power-Path Isolation
IRLML5103TRPBF can serve as a compact P-channel isolation or load-disconnect element in low-voltage power paths. The verified -30 V drain-source rating provides a defined maximum for the P-channel polarity, and the 760 mA Ta current rating is suitable for controlled moderate loads. The SOT-23 footprint enables localized switching without a large package. Because source and gate transients can affect reliability, add suitable gate resistance, protection, and state control. The 540 mW Ta power rating makes PCB copper and ambient temperature important.
おすすめ
Reverse-Polarity Protection
IRLML5103TRPBF can be evaluated for low-voltage reverse-polarity protection when the system voltage and load current remain within the verified 30 V and 760 mA ratings. Its P-channel structure can provide a controlled series-element approach in suitable circuit topologies, but the exact connection and gate bias must be designed for the protection behavior. The 600 mOhm maximum on-resistance affects voltage drop and fault-path heating. Validate startup, reverse-bias conditions, current transients, and package temperature with the manufacturer datasheet and a tested prototype.
おすすめ
Sensor and Peripheral Rail Control
IRLML5103TRPBF fits sensor and peripheral rail control in embedded and industrial electronics when a compact P-channel switch is preferred. The 760 mA Ta rating supports many low-power sensors and interface loads, while the 3.4 nC gate charge enables straightforward gate-driver sizing at moderate switching speeds. The 30 V maximum drain-source rating offers useful low-voltage headroom. Place the device close to the controlled rail, keep the gate loop compact, and account for the 600 mOhm maximum on-resistance when estimating steady-state voltage drop.
おすすめ
Low-Power DC-DC Control
IRLML5103TRPBF may be used in low-power DC-DC or power-path control circuits where a P-channel MOSFET provides controlled conduction or isolation. The part's verified 30 V rating, 760 mA Ta current rating, and 3.4 nC gate charge are useful for initial topology screening. The 600 mOhm maximum on-resistance determines significant conduction loss, so it is not a substitute for a low-resistance power stage in high-current conversion. Verify switching losses, gate-drive voltage, safe operating area, and thermal behavior in the final circuit.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRLML5103TRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRLML5103TRPBF-1 | IRLML6346TRPBF | IRLML6302TRPBF | BSS84PH6327XTSA2 | BSS138NH6327XTSA2 |
|---|---|---|---|---|---|---|
| Package | Micro3/SOT-23 | SOT-23 | Micro3/SOT-23 family | Micro3/SOT-23 family | Micro3/SOT-23 family | Micro3/SOT-23 family |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
主な差別化要因
- Verified P-channel 30 V rating （vs IRLML6346TRPBF)
- Specified 760 mA drain current （vs BSS84PH6327XTSA2)
- Listed 3.4 nC gate charge （vs IRLML6302TRPBF)
- Compact Micro3/SOT-23 footprint （vs BSS138NH6327XTSA2)
設計ノート
Estimate conduction loss as P = I²R, using the verified 600 mOhm maximum on-resistance as the conservative starting point. At the listed 760 mA Ta current, the calculated conduction loss is approximately 0.346 W, which approaches the supplied 540 mW Ta power-dissipation rating and requires careful derating. The Micro3/SOT-23 package depends on PCB copper, ambient temperature, duty cycle, and mounting conditions. Keep the thermal path compact and verify the final junction temperature using the manufacturer thermal data.
Place IRLML5103TRPBF close to the controlled load or supply connection and keep the drain/source current path short and wide. A compact high-current loop reduces parasitic inductance and helps limit switching overshoot. Use a nearby gate resistor where the gate-drive circuit requires damping, and provide a defined gate pulldown or clamp if the control signal can float. The SOT-23 land pattern and pin orientation must be checked against the official package drawing before PCB fabrication.
Do not interpret the 760 mA drain-current value as independent of ambient temperature and board conditions. Confirm the gate-source drive voltage, maximum gate voltage, switching transient exposure, and safe operating area in the official datasheet. Also avoid direct replacement of IRLML5103TRPBF with a part that has the same package family but a different pinout, polarity, or voltage rating. The supplied comparison results identify related parts but do not establish complete cross-brand drop-in equivalence.
Switch the MOSFET with the minimum necessary gate-drive speed and add a gate resistor if ringing or excessive dv/dt is present. The 3.4 nC gate-charge value is useful for estimating driver demand, but actual switching behavior depends on gate resistance, load capacitance, source inductance, and PCB layout. Keep the gate trace away from sensitive analog nodes where possible. For inductive loads, evaluate transient suppression so drain-source voltage does not exceed the verified 30 V rating.
コンプライアンス情報
RoHS compliance is stated in the supplied DigiChip result. REACH, AEC-Q100, lead-free, halogen-free, and conflict-minerals information was not provided in the verified data.
