IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon
部品番号: IRLML0030TRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.36 | $3.60 |
| 100 | $0.25 | $25.00 |
| 500 | $0.19 | $95.00 |
| 1,000 | $0.16 | $160.00 |
| 3,000 | $0.13 | $390.00 |
IRLML0030TRPBF 概要
What is a logic-level N-channel MOSFET? It is a discrete semiconductor switch whose gate threshold is designed low enough (typically below 2.5 V) to be driven directly from low-voltage logic outputs (3.3 V or 5 V microcontrollers, gate drivers) without a separate charge pump. MOSFETs sit in the hierarchy: power MOSFET -> discrete semiconductor -> active component. Logic-level parts eliminate the level-shift stage that older 10 V-threshold parts required, simplifying design and shrinking PCB area.
Key features include a 1.3 W power dissipation rating on the standard FR-4 board, industry-standard Micro3/SOT-23 footprint for multi-vendor compatibility, JEDEC-qualified process, and optimized switching loss. The exposed lead frame on the Micro3 package provides moderate thermal performance for its size, sufficient for load-switch and DC-DC tasks where continuous current stays below ~2 A. Per the Infineon datasheet, the part is qualified for wave-solder profiles.
Typical applications include DC-DC buck converter synchronous rectifier stages, battery protection / load switch circuits in portable electronics, low-voltage motor and solenoid drivers, and LED driver high-side switches. The 27 mOhm RDS(on) at 4.5 V VGS keeps conduction loss low in 5 V rails, while the small Qg of 3.6 nC enables switching frequencies above 1 MHz for compact point-of-load converters.
When designing with this part, derate continuous current by at least 30% relative to the 5.3 A Ta rating because PCB copper area dominates thermal performance in SOT-23 layouts. Keep the gate-drive trace short and add a gate-source resistor (10-100 kOhm) to prevent unwanted turn-on from dv/dt coupling.
This page synthesizes Infineon datasheet parameters, distributor pricing tiers, drop-in alternatives in the same Micro3 footprint, and practical layout notes not consolidated in the original datasheet, delivering an at-a-glance engineering brief for new designs.
ドロップイン代替品: IRLML0030TRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRLML0030TRPBF （同一形状・フットプリント） — 相違点: Package, Technology, MSL Level, Operating Temperature Range, Part Number.
クイック比較ツール — 並列比較する代替部品を選択:
IRLML2502TRPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRLML2060TRPBF
✅ ドロップイン✓ 在庫あり
$0.13 / 個
データシートを見る →IRLL024NTRPBF
✅ ドロップイン✓ 在庫あり
$0.22 / 個
データシートを見る →IRLML5103TRPBF
✅ ドロップイン✓ 在庫あり
$0.0525 / 個
データシートを見る →IRLML6346TRPBF
✅ ドロップイン✓ 在庫あり
$0.18 / 個
データシートを見る →IRLML6246TRPBF
✅ ドロップイン✓ 在庫あり
$0.11 / 個
データシートを見る →IRLML0030TRPBF 最大定格＆電気的特性
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | 3.6 nC typical |
| Power Dissipation (PD) at TA=25C | 1.3 W |
| 動作温度範囲 | -55C to +150C |
| パッケージ | Micro3 / SOT-23 (3-pin) |
| 実装タイプ | Surface Mount |
| Technology | IR HEXFET Power MOSFET |
| MSLレベル | 1 (unlimited floor life per JEDEC J-STD-020) |
| Soldering | Wave-solder capable |
| Qualification | JEDEC standard |
| RoHS ステータス | Compliant |
IRLML0030TRPBF ピン構成
| ピン 1 | Gate — Gate control input (logic-level) |
| ピン 2 | Source — Source terminal (connected to GND for low-side) |
| ピン 3 | Drain — Drain terminal (load connection for low-side switch) |
安全動作領域 (estimated from datasheet SOA)
主な用途
IRLML0030TRPBF の用途: 6 件s: DC-DC Buck Converter Synchronous Rectifier, Battery Load Switch / Port Protection, LED Driver High-Side Switch, Low-Voltage Motor and Solenoid Driver, Power OR-ing and Redundancy Switch, Reverse-Polarity and Surge Protection.
DC-DC Buck Converter Synchronous Rectifier
The IRLML0030TRPBF serves as the low-side synchronous rectifier MOSFET in 5 V-input buck converters delivering up to 3 A continuous load. Its 27 mOhm RDS(on) at VGS=4.5 V and 3.6 nC total gate charge yield conduction and switching losses acceptable for 500 kHz-1 MHz switching frequencies. Paired with a logic-level PWM controller, it replaces a Schottky diode to gain 3-5% efficiency. The Micro3 footprint fits compact POL modules under handheld devices and IoT sensors.
おすすめ
Battery Load Switch / Port Protection
The IRLML0030TRPBF is ideal for USB port and battery load-switch circuits in 1-cell Li-ion powered devices. Its 5 V gate-drive compatibility allows direct control from a 3.3 V GPIO without level shifting. The 30 V VDS rating easily handles USB hot-plug transients. With 27 mOhm RDS(on) at 5 V VGS, voltage drop at 2 A load is only 54 mV, preserving battery runtime. Reverse-current blocking is achieved by adding a second IRLML0030TRPBF back-to-back.
おすすめ
LED Driver High-Side Switch
For low-voltage LED driver high-side switching in 5 V-12 V lighting strips, the IRLML0030TRPBF's 30 V VDS and 5.3 A ID rating comfortably handle 1-2 A LED strings with PWM dimming. The 27 mOhm RDS(on) keeps conduction loss below 100 mW per FET at 2 A, eliminating the need for thermal management. Gate drive from a 3.3 V or 5 V microcontroller timer captures PWM dimming at 1 kHz-20 kHz without heatsinking.
おすすめ
Low-Voltage Motor and Solenoid Driver
The IRLML0030TRPBF drives small DC motors, solenoids, and relays in 5 V-24 V systems where its 5.3 A ID and 30 V VDS ratings provide ample margin. Free-wheeling diode protection is required across inductive loads; a 1N4001 or Schottky diode handles back-EMF. Gate drive from a logic-level half-bridge driver IC such as the DRV8714 enables bidirectional motor control. The Micro3 footprint fits compact H-bridge layouts for robotics and hobby servos.
おすすめ
Power OR-ing and Redundancy Switch
The IRLML0030TRPBF is well-suited as a power OR-ing FET in dual-battery or dual-supply redundancy circuits where two sources feed a common load. Its low RDS(on) of 27 mOhm minimizes forward voltage drop while the body diode provides reverse blocking during transient source switching. Combined with a comparator-based controller, the FET isolates failed sources and prevents cross-conduction. The Micro3 footprint enables compact redundancy modules in server and telecom applications.
おすすめ
Reverse-Polarity and Surge Protection
Placed in series with the supply rail, the IRLML0030TRPBF can act as a reverse-polarity protection switch when paired with a comparator or dedicated hot-swap controller. Its 30 V VDS rating absorbs typical load-dump transients in 12 V automotive subsystems (after TVS clamping). At 27 mOhm RDS(on), voltage drop at 2 A is only 54 mV, much lower than Schottky-based reverse-polarity protection. The logic-level gate enables microcontroller-controlled enable/disable.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRLML0030TRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRLML2502TRPBF | IRLML2060TRPBF | IRLML6346TRPBF | IRLML5103TRPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | Micro3 / SOT-23 | Micro3 / SOT-23 - same | Micro3 / SOT-23 - same | Micro3 / SOT-23 - same | Micro3 / SOT-23 - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous Drain Current (ID) | 5.3 A | 5.2 A | 5.2 A | 5.5 A | 3.6 A (P-channel) |
| RDS(on) max at VGS=4.5V | 27 mOhm | 45 mOhm | ~30 mOhm | 20 mOhm | 60 mOhm |
| Total Gate Charge (Qg) | 3.6 nC | 5 nC | 4 nC | 3 nC | 9 nC |
| Power Dissipation (PD) | 1.3 W | 1.3 W | 1.3 W | 1.3 W | 1.3 W |
| Channel Polarity | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel |
| Unit Price (qty 1, USD) | $0.42 | $0.40 | $0.45 | $0.50 | $0.55 |
主な差別化要因
- Lowest RDS(on) in Micro3 family at 27 mOhm （vs IRLML2502TRPBF)
- Higher continuous current than P-channel alternatives （vs IRLML5103TRPBF)
- Lower gate charge than second-source equivalents （vs IRLML2060TRPBF)
設計ノート
Estimated: At TA=25C on a standard JEDEC FR-4 board with 1 oz copper, the IRLML0030TRPBF dissipates 1.3 W. For PCB layouts without dedicated thermal copper, derate continuous current to 2-3 A to keep junction below 100C. Add copper pours on the drain pad (pin 3) and source pad (pin 2) to spread heat. Ambient-temperature derating should follow 10 mW/C above 25C.
Keep the gate-drive trace short (<5 mm) to minimize parasitic inductance that causes ringing and dv/dt-induced false turn-on. Add a 10 kOhm gate-source resistor to bleed off residual charge and hold the FET off during controller reset. Place input capacitors and the gate-drive IC within 10 mm of the gate pin. Use a wide source-return trace to keep the high-current loop small.
Do not exceed VGS of +/- 12 V (logic-level maximum) or the gate oxide will be damaged. Add a TVS diode or zener clamp on the gate for inductive-load applications. Always verify the body diode's reverse-recovery behavior when used in synchronous rectifier topologies above 500 kHz. The Micro3 package is not rated for >1.3 W dissipation without copper spreading.
コンプライアンス情報
RoHS compliant per Infineon datasheet; lead-free reflow profile supported. JEDEC-qualified process per Infineon product page. Not AEC-Q100 qualified - not intended for automotive safety applications.
