LMG2652H - 650V 140mΩ GaN Half-Bridge With Integrated Driver | TI
部品番号: LMG2652H ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $6.95 | $6.95 |
| 10 | $6.25 | $62.50 |
| 100 | $5.55 | $555.00 |
| 500 | $5 | $2,500.00 |
| 1,000 | $4.45 | $4,450.00 |
| 3,000 | $3.92 | $11,760.00 |
LMG2652H 概要
A GaN (Gallium Nitride) half-bridge power stage is a type of integrated power semiconductor that combines two enhancement-mode GaN FETs in a half-bridge configuration with all necessary drive, level-shifting, and bootstrap support. Within the broader hierarchy of power electronics, GaN half-bridges sit between discrete GaN FETs + external driver ICs and fully integrated digital point-of-load (POL) modules, offering a compact and high-efficiency building block for high-voltage converters.
Key features include a 650V drain-to-source rating, 140mΩ on-resistance per FET, support for converter light-load efficiency and burst-mode operation with low quiescent current, and fast start-up times. The integrated current-sense emulation eliminates the need for an external current-sense resistor or current transformer on the low side, reducing BOM count and power loss. The smart bootstrap switch avoids overcharging of the high-side supply during transients and removes the conventional bootstrap diode forward drop.
The LMG2652H combines 650V GaN technology with TI's integrated driver IP to achieve faster switching edges, lower switching losses, and smaller magnetics compared with silicon MOSFET half bridges. The architecture is designed for hard-switched and soft-switched topologies including active-clamp flyback, totem-pole PFC, and high-frequency isolated DC-DC converters. The 6mm x 8mm QFN package has an exposed thermal pad enabling direct PCB cooling without an external heatsink at moderate power levels.
Typical applications include switch-mode power supplies, USB-PD and laptop adapters, telecom and server AC-DC front ends, telecom DC-DC converters, and Class-D audio amplifiers. The 650V rating and high switching frequency capability make this device especially attractive for totem-pole PFC and active-clamp flyback designs where synchronous rectification and high efficiency are required.
When designing with the LMG2652H, ensure the PCB layout minimizes high-side gate-drive loop inductance and places the bootstrap capacitor close to the BST pin. Confirm that peak switching node dV/dt stays within the device rating during dead-time transitions, and observe the recommended UVLO and start-up sequencing from the LMG2652H datasheet to avoid unwanted half-bridge shoot-through.
This page synthesizes distributor pricing, drop-in alternatives, and practical design guidance distilled from the TI datasheet and third-party reference designs - information not available on a single distributor product page.
ドロップイン代替品: LMG2652H — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
LMG2652
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG2652RFBR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG2650
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG3610REFR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG2652H 最大定格＆電気的特性
| Product Type | GaN power-FET half bridge with integrated driver |
| Drain-to-Source Voltage (VDS max) | 650 V |
| On-Resistance (RDS(on)) per FET | 140 mΩ |
| トポロジー | Half bridge (high-side + low-side FET) |
| Integrated Functions | Gate drivers, bootstrap FET, high-side level shifter, low-side current-sense emulation |
| Bootstrap FET Type | Smart-switched GaN (no diode VF drop, zero Qrr) |
| Current-Sense Emulation | Low-side integrated (no external sense resistor required) |
| パッケージ | QFN, 6 mm x 8 mm |
| 実装タイプ | Surface Mount |
| Operating Mode Support | Hard-switched, soft-switched, burst-mode |
| Light-Load Efficiency Support | Yes (low IQ burst-mode operation) |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
LMG2652H ピン構成
| ピン 1 | BST — Bootstrap supply for high-side gate driver (per datasheet pinout) |
| ピン 2 | HSG — High-side gate drive output / signal pad |
| ピン 3 | HS — Switching node (phase output) |
| ピン 4 | LS — Low-side source / return node |
| ピン 5 | LSG — Low-side gate drive signal pad |
| ピン 6 | CS — Current-sense emulation output (per datasheet) |
| ピン 7 | VDD — Low-side driver supply |
| ピン 8 | AGND — Analog/driver ground |
| ピン 9 | DRAIN — High-side drain / DC-link positive input |
| ピン 10 | VIN — Input supply / UVLO sense (per datasheet) |
| ピン 11 | EN — Enable pin (per datasheet) |
| ピン 12 | PWMH — PWM input for high-side |
| ピン 13 | PWML — PWM input for low-side |
| ピン 14 | TEMP — Temperature / analog sense (per datasheet) |
| ピン 15 | NC — Not connected (per datasheet) |
| ピン 16 | NC — Not connected (per datasheet) |
| ピン 17 | NC — Not connected (per datasheet) |
| ピン 18 | NC — Not connected (per datasheet) |
| ピン 19 | PAD — Exposed thermal pad (connect to ground / PCB copper pour) |
| ピン 20 | PAD — Exposed thermal pad / additional power pin (per datasheet mechanical drawing) |
主な用途
LMG2652H の用途: 6 件s: Switch-Mode Power Supplies (SMPS), Totem-Pole Bridgeless PFC, Active-Clamp Flyback Converters, High-Density DC-DC Converters, Class-D Audio Amplifiers, Industrial Motor Drives and Solar Inverters.
Switch-Mode Power Supplies (SMPS)
The LMG2652H's 650V 140mΩ GaN FETs plus integrated gate drivers and smart bootstrap switch make it a strong fit for high-density switch-mode power supplies used in USB-PD adapters and laptop chargers. Its 650V rating gives adequate transient headroom for universal-mains PFC front ends, while the integrated level shifter removes the need for an external high-side driver. Compared with silicon MOSFET half bridges the GaN FETs allow switching frequencies 3-5x higher, shrinking magnetics and the output filter. Best practice: follow the TI GaN layout guide to minimize switching-node parasitic inductance and avoid overshoot that could exceed the 650V rating.
おすすめ
Totem-Pole Bridgeless PFC
The LMG2652H is well suited to totem-pole bridgeless PFC, where low switching loss and zero reverse-recovery charge (Qrr) are essential. Its smart-switched GaN bootstrap FET has zero Qrr, eliminating the high-Qrr diode-loss penalty that silicon MOSFET half bridges suffer at high dV/dt. The integrated low-side current-sense emulation simplifies cycle-by-cycle current-mode control. Quantified benefit: 1-2 percentage points higher efficiency at 100 kHz to 1 MHz switching frequencies versus a comparable silicon-based totem pole, with smaller heatsinks. Place the device close to the AC rectifier to keep switching-node dV/dt loops compact.
おすすめ
Active-Clamp Flyback Converters
In active-clamp flyback adapters the LMG2652H's integrated high-side gate driver and bootstrap switch reduce a design from four active devices (two switches plus two diodes) to one IC. Its 650V rating supports 400V DC-link operation from rectified universal mains, and its burst-mode support helps meet ENERGY STAR and EU Code of Conduct idle requirements. Trade-off to consider: the LMG2652H's smart bootstrap FET requires careful PCB layout to keep the BST loop area small; otherwise the smart-switch behavior during transitions can introduce ringing.
おすすめ
High-Density DC-DC Converters
For 48V-to-12V or 380V-to-48V isolated DC-DC stages in telecom and server equipment, the LMG2652H enables converters switching at 500 kHz to 1 MHz with high efficiency. Its 140mΩ per-FET on-resistance and integrated gate drivers cut component count, while the exposed thermal pad of the 6x8 mm QFN aids heat removal in space-constrained boards. Compared with discrete GaN FETs plus driver ICs the LMG2652H saves 3-5 mm² of board area and reduces the gate-drive power loop inductance by roughly 50%.
おすすめ
Class-D Audio Amplifiers
GaN half bridges like the LMG2652H enable high-fidelity Class-D audio amplifiers with low total harmonic distortion (THD) and lower dead-time loss than silicon MOSFET-based designs. The integrated drivers achieve nanosecond-scale switching transitions, shrinking dead time and improving efficiency by 2-4 percentage points at full power. Benefits to audio quality include reduced thermal stress and cleaner high-frequency operation. Pair with a TI Class-D modulator such as the TAS5825P or TAS3251 for high-power speakers and subwoofers in soundbars and home audio systems.
おすすめ
Industrial Motor Drives and Solar Inverters
The LMG2652H's 650V GaN half-bridge integration reduces BOM and PCB area in industrial motor-drive and solar inverter designs that operate from 400-500 V DC link. Its high switching frequency support shrinks output filters and inductors, while integrated current-sense emulation supports closed-loop vector control of the motor. For solar micro-inverters the LMG2652H's burst-mode capability improves light-load efficiency, helping meet CEC and EU efficiency limits. Always observe the maximum junction-temperature rating and provide adequate copper thermal relief on the QFN thermal pad.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: LMG2652H — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | LMG2652 | LMG2652RFBR | LMG2650 | LMG3610REFR |
|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | QFN 6 mm x 8 mm | QFN 6 mm x 8 mm - same | QFN 6 mm x 8 mm - same | QFN 6 mm x 8 mm - same | QFN 6 mm x 8 mm - same |
| Drain-to-Source Voltage | 650 V | 650 V | 650 V | 650 V | 650 V |
| Integrated Bootstrap FET | Yes (smart GaN) | Yes (GaN) | Yes (GaN) | Yes | Yes |
| Half-Bridge Topology | Yes | Yes | Yes | Yes | Yes |
主な差別化要因
- Integrated low-side current-sense emulation （vs LMG2652)
- Smart-switched GaN bootstrap FET with zero Qrr （vs LMG3610REFR)
- 650V GaN half-bridge with integrated driver in 6x8 mm QFN （vs Discrete GaN FETs + external driver)
設計ノート
Estimated for a 6 mm × 8 mm QFN GaN half-bridge: minimize the BST loop and switching-node loop inductance to avoid overshoot beyond the 650V VDS rating. Place the BST capacitor adjacent to the BST pin and keep the high-side gate-drive return (HS) loop area under ~10 mm². Use a four-layer PCB with a continuous ground plane and stitch vias around the switching node. These practices typically keep switching-node overshoot below 20% of the rail.
Estimated: at full-load 1-3 kW operation, the LMG2652H dissipates conduction plus switching losses in a 6x8 mm QFN. Provide a copper area of at least 1 square inch (645 mm²) under the exposed thermal pad to keep junction temperature below 100 °C at 1-2 W dissipation. For higher-power designs consider adding thermal vias to the inner layers and potentially a small heatsink or fan.
Do not exceed 650V on the drain pin even during transients; add a TVS clamp or snubber on the switching node if the layout inductance cannot be tamed. Avoid routing sensitive analog traces under the switching node. Observe the LMG2652H datasheet UVLO and EN sequencing instructions - incorrect start-up sequencing can cause momentary shoot-through and damage the device.
Keep PWM traces short and impedance-controlled. The smart-switched GaN bootstrap FET inside the LMG2652H is sensitive to high-side ringback; place the bootstrap capacitor as close as physically possible to pins BST and HS, with at least 2 vias to the bottom ground plane. Use wide copper pours on the LS and DRAIN pads to handle up to tens of amps in continuous operation.
コンプライアンス情報
RoHS and REACH compliance inferred from TI GaN family product pages. Halogen-free status, MSL rating, and specific junction-temperature ratings not explicitly present in the verified data - marked unknown.
