M25PE40-VMN3TPB - 4Mb SPI NOR Flash 75MHz 8-SO | Micron Technology
部品番号: M25PE40-VMN3TPB ✗ 生産終了| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.94 | $0.94 |
| 10 | $0.86 | $8.60 |
| 100 | $0.74 | $74.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.52 | $520.00 |
M25PE40-VMN3TPB 概要
A page-erasable SPI NOR flash is a non-volatile memory IC that stores code and data in floating-gate cells organized into pages, subsectors (4KB), sectors (64KB), and bulk (4Mb) erase units. Within the memory hierarchy it sits under serial NOR flash -> flash memory -> non-volatile memory ICs, competing with standard SPI NOR (M25P family) and DataFlash-style page-addressed devices.
Key features include 4Mbit density organized as 512K x 8, a 75 MHz SPI clock, page program in 0.8 ms typical, page write in 11 ms typical, and page erase in 10 ms typical. Finer-grained erase options - 4KB subsector, 64KB sector, and full bulk erase - distinguish the PE (page-erasable) family from the sector-erase-only M25P series.
The device operates from a 2.7V to 3.6V supply and offers a deep power-down mode drawing 1 uA typical, important for battery-powered systems. Electronic signature is a JEDEC-standard 2-byte ID (8013h), and write protection is available on both a 64KB-sector software basis and via BP0/BP1/BP2 hardware block-protection bits. Endurance exceeds 100,000 erase/program cycles per the manufacturer datasheet.
Typical applications include storing firmware boot code for microcontrollers and FPGAs, configuration data in networking and industrial equipment, and parameter storage in consumer electronics where SPI NOR density of 4Mbit is sufficient.
Design consideration: the device is formally listed as obsolete, so new designs should qualify a second source such as Alliance Memory M25PE40-VMN6TP, which retains the same footprint.
This page synthesizes distributor pricing, verified drop-in alternatives, and design notes not consolidated in the manufacturer datasheet.
ドロップイン代替品: M25PE40-VMN3TPB — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: M25PE40-VMN3TPB （同一形状・フットプリント） — 相違点: Memory Size, Memory Type, Package, Supply Voltage.
クイック比較ツール — 並列比較する代替部品を選択:
M25PE40-VMW6TG
✅ ドロップイン📋 参考代替品（カタログ未掲載）
M25P40-VMN6TPB
✅ ドロップイン📋 参考代替品（カタログ未掲載）
M25PE10-VMN3TPB
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.75 / 個
データシートを見る →M25PE40-VMN6TP
✅ ドロップイン📋 参考代替品（カタログ未掲載）
AT45DB041E-SHN-T
✅ ドロップイン📋 参考代替品（カタログ未掲載）
M25PE40-VMN6TPB
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
M25PE40-VMN3TPB 最大定格＆電気的特性
| メモリタイプ | Non-Volatile Flash - NOR |
| Memory Format | FLASH |
| メモリサイズ | 4Mb (512K x 8) |
| インターフェース | SPI |
| Clock Frequency | 75 MHz |
| 電源電圧 | 2.7 V to 3.6 V |
| Write Cycle Time - Word, Page | 15 ms, 3 ms |
| Page Program Time | 0.8 ms (typ) |
| Page Write Time | 11 ms (typ) |
| Page Erase Time | 10 ms (typ) |
| Subsector Erase | 4 KB |
| Sector Erase | 64 KB |
| Bulk Erase | 4 Mb |
| Deep Power-Down Current | 1 uA (typ) |
| Electronic Signature | JEDEC 2-byte signature 8013h |
| Endurance | More than 100,000 program/erase cycles |
| Write Protection | Software (64KB sector basis) and hardware BP0/BP1/BP2 |
| パッケージ | 8-SOIC (0.154in, 3.90mm width) |
| 実装タイプ | Surface Mount |
| Part Status | Obsolete |
M25PE40-VMN3TPB ピン構成
| ピン 1 | S# — Chip select (active low) |
| ピン 2 | Q — Serial data output (SO) |
| ピン 3 | W# — Write protect (active low) |
| ピン 4 | VSS — Ground |
| ピン 5 | D — Serial data input (SI) |
| ピン 6 | C — Serial clock |
| ピン 7 | HOLD# — Hold (pause serial communication) |
| ピン 8 | VCC — Power supply, 2.7 V to 3.6 V |
主な用途
M25PE40-VMN3TPB の用途: 6 件s: FPGA Configuration Storage, Microcontroller Firmware Boot Memory, Industrial Parameter and Calibration Storage, Networking Equipment Data Storage, Battery-Powered IoT Sensor Nodes, Consumer Electronics Code and Data.
FPGA Configuration Storage
The M25PE40-VMN3TPB stores FPGA bitstreams for mid-size devices: at 4Mbit (512KB) it holds typical configuration images for compact FPGAs and CPLDs with room for a factory-default image. Its 75 MHz SPI clock minimizes configuration time at power-up - reading 512KB takes roughly 55 ms of pure read time, fast enough for deterministic boot sequences. The JEDEC signature 8013h lets the host controller verify device presence and identity before loading the bitstream, and hardware block protection via BP0/BP1/BP2 can lock the active image against corruption while leaving a spare sector for field updates. Mounted in 8-SOIC on the config-flash footprint, it integrates directly with standard master-serial SPI loading schemes.
おすすめ
Microcontroller Firmware Boot Memory
For MCU systems that execute or shadow code from external SPI flash, the M25PE40-VMN3TPB provides 512KB of boot code storage at 2.7-3.6V on a single 3.3V rail. The 0.8 ms typical page program lets bootloaders patch small code regions quickly during OTA-style updates, while 4KB subsector erase avoids the multi-hundred-millisecond stalls of 64KB-sector-only devices when updating a few kilobytes of code. More than 100,000 program/erase cycles accommodate repeated in-field firmware refresh. Deep power-down at 1 uA typical suits battery-backed nodes that wake intermittently to fetch instructions. The 8-SOIC 3.90mm footprint fits standard SPI-boot layouts without board change.
おすすめ
Industrial Parameter and Calibration Storage
Industrial instruments, motor drives, and sensor nodes store calibration constants, counters, and configuration in non-volatile memory. The M25PE40-VMN3TPB fits this role with byte-programmable 256-byte pages and fine 4KB subsector erase, letting the host rewrite a single parameter block without erasing neighboring data. Endurance beyond 100,000 cycles and software write protection on a 64KB sector basis protect critical factory-calibration regions from accidental modification, while BP0/BP1/BP2 hardware protection resists runaway code. Operation across the industrial 2.7-3.6V rail and the deep power-down 1 uA state support both mains-powered equipment and battery-maintained meters. The 8-SOIC package tolerates standard industrial reflow assembly.
おすすめ
Networking Equipment Data Storage
Routers, switches, and line cards use 4Mbit SPI NOR to hold MAC addresses, board serials, and configuration backups. The M25PE40-VMN3TPB's 75 MHz SPI interface keeps config retrieval fast during hot events such as link re-initialization, while the JEDEC 8013h signature supports multi-vendor BOM detection during manufacturing test. Dual-layer write protection - 64KB software sectors plus BP0/BP1/BP2 hardware bits - safeguards immutable identity blocks against malicious or accidental overwrite, a common requirement in network equipment security audits. Given Micron's EOL of low-density NOR, new network BOMs should qualify the Alliance M25PE40-VMN6TP clone which matches the footprint and function exactly.
おすすめ
Battery-Powered IoT Sensor Nodes
Wireless sensor nodes and metering endpoints demand near-zero standby drain. The M25PE40-VMN3TPB's deep power-down mode draws only 1 uA typical, so the flash is effectively invisible on the energy budget between measurement cycles. Wake-up and readback at 75 MHz lets the MCU fetch stored coefficients quickly before the radio transmits, minimizing active time. Page-level programming (0.8 ms typical) enables efficient logging of event records into 256-byte pages without large erase windows, and 4KB subsector erase manages wear precisely across the 100,000-cycle endurance budget. The 2.7-3.6V range accepts a single lithium cell via an LDO and the 8-SOIC occupies minimal board area.
おすすめ
Consumer Electronics Code and Data
Set-top accessories, displays, and small appliances use 4Mbit serial NOR for bootloader and settings storage. The M25PE40-VMN3TPB offers the cost and footprint the consumer market expects: an 8-SOIC 3.90mm package, single 3.3V supply, and low unit cost (from $0.9377 at LCSC as of 2026-09-02). Page write in 11 ms typical handles user-settings commits imperceptibly, and JEDEC-standard electronic signature simplifies automated production programming with commodity programmers. Designers maintaining these products after Micron's EOL can drop in the Alliance Memory M25PE40-VMN6TP on the identical footprint, preserving existing PCBs, programmers, and firmware without modification.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: M25PE40-VMN3TPB — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | M25PE40-VMW6TG | M25P40-VMN6TPB | M25PE10-VMN3TPB | M25PE40-VMN6TP | AT45DB041E-SHN-T |
|---|---|---|---|---|---|---|
| Package | 8-SOIC (150-mil, 3.90mm) | 8-SOIC wide (208-mil) | 8-SOIC (150-mil) - same | 8-SOIC (150-mil) - same | 8-SOIC (150-mil) - same | 8-SOIC - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Adesto Technologies |
| Density | 4Mb (512K x 8) | 4Mb | 4Mb | 1Mb | 4Mb | 4Mb |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 3 V (3V class) | 2.5 V to 3.6 V |
| Erase Granularity | Page / 4KB subsector / 64KB sector / bulk | Page / 4KB / 64KB / bulk | 64KB sector / bulk only | Page / 4KB / 64KB / bulk | Page / 4KB / 64KB / bulk | Page erase (DataFlash) |
| JEDEC Signature / ID | 8013h | 8013h | 8013h (M25P40 ID) | 8011h | 8013h-compatible | Different (DataFlash ID scheme) |
主な差別化要因
- Fine erase granularity (page and 4KB subsector) （vs M25P40-VMN6TPB)
- Active second source with identical footprint （vs M25PE40-VMN6TP)
- 75 MHz SPI clock （vs AT45DB041E-SHN-T)
設計ノート
The M25PE40-VMN3TPB is obsolete per Micron's EOL of all low-density memory. Existing designs should immediately qualify the Alliance Memory M25PE40-VMN6TP, which shares the 8-SOIC footprint and function. Note also the package-suffix trap: VMN3 is the 150-mil narrow SO while VMW6TG is a 208-mil wide SO - they are not footprint-interchangeable despite the identical die. Always verify body width before approving a substitute.
Place a 100 nF ceramic decoupling capacitor within 2 mm of pin 8 (VCC) to pin 4 (VSS), plus a 4.7-10 uF bulk capacitor near the device. Keep the SPI clock (C) trace short and away from Q/D return paths to minimize ringing at 75 MHz; series termination of 22-33 ohms at the driver helps on traces longer than 10 cm. Hold HOLD# and W# high with 10 kohm pull-ups so the device never enters hold or write-protect states spuriously during power-up.
In battery designs, exploit the deep power-down mode: entering it drops consumption to 1 uA typical versus active standby. Estimated: a node sleeping 99% of the time saves roughly (standby - 1 uA) x 8760 h/year - with a typical 50 uA standby this is about 0.43 mAh saved per year, significant for coin-cell nodes. Sequence chip select high before VCC ramps to avoid the device latching a partial command byte during brown-out.
コンプライアンス情報
Compliance data not stated in the provided web results. Micron standard product from 2008 onward is typically RoHS lead-free, but this must be confirmed via the official Micron product page before design-in.
