M25PE40-VMN3TPB - 4Mb SPI NOR Flash 75MHz 8-SO | Micron Technology
MPN: M25PE40-VMN3TPB β End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.94 | $0.94 |
| 10 | $0.86 | $8.60 |
| 100 | $0.74 | $74.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.52 | $520.00 |
Drop-in alternatives for M25PE40-VMN3TPB β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
M25PE40-VMW6TG
β Drop-Inπ Reference alternative (not in catalog)
M25P40-VMN6TPB
β Drop-Inπ Reference alternative (not in catalog)
M25PE10-VMN3TPB
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.75 / Unit
View Datasheet βM25PE40-VMN6TP
β Drop-Inπ Reference alternative (not in catalog)
AT45DB041E-SHN-T
β Drop-Inπ Reference alternative (not in catalog)
M25PE40-VMN6TPB
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
M25PE40-VMN3TPB Maximum Ratings & Electrical Characteristics
| Memory Type | Non-Volatile Flash - NOR |
| Memory Format | FLASH |
| Memory Size | 4Mb (512K x 8) |
| Interface | SPI |
| Clock Frequency | 75 MHz |
| Supply Voltage | 2.7 V to 3.6 V |
| Write Cycle Time - Word, Page | 15 ms, 3 ms |
| Page Program Time | 0.8 ms (typ) |
| Page Write Time | 11 ms (typ) |
| Page Erase Time | 10 ms (typ) |
| Subsector Erase | 4 KB |
| Sector Erase | 64 KB |
| Bulk Erase | 4 Mb |
| Deep Power-Down Current | 1 uA (typ) |
| Electronic Signature | JEDEC 2-byte signature 8013h |
| Endurance | More than 100,000 program/erase cycles |
| Write Protection | Software (64KB sector basis) and hardware BP0/BP1/BP2 |
| Package | 8-SOIC (0.154in, 3.90mm width) |
| Mounting Type | Surface Mount |
| Part Status | Obsolete |
M25PE40-VMN3TPB Pin Configuration
| Pin 1 | S# β Chip select (active low) |
| Pin 2 | Q β Serial data output (SO) |
| Pin 3 | W# β Write protect (active low) |
| Pin 4 | VSS β Ground |
| Pin 5 | D β Serial data input (SI) |
| Pin 6 | C β Serial clock |
| Pin 7 | HOLD# β Hold (pause serial communication) |
| Pin 8 | VCC β Power supply, 2.7 V to 3.6 V |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
M25PE40-VMN3TPB is suitable for 6 applications: FPGA Configuration Storage, Microcontroller Firmware Boot Memory, Industrial Parameter and Calibration Storage, Networking Equipment Data Storage, Battery-Powered IoT Sensor Nodes, Consumer Electronics Code and Data.
FPGA Configuration Storage
The M25PE40-VMN3TPB stores FPGA bitstreams for mid-size devices: at 4Mbit (512KB) it holds typical configuration images for compact FPGAs and CPLDs with room for a factory-default image. Its 75 MHz SPI clock minimizes configuration time at power-up - reading 512KB takes roughly 55 ms of pure read time, fast enough for deterministic boot sequences. The JEDEC signature 8013h lets the host controller verify device presence and identity before loading the bitstream, and hardware block protection via BP0/BP1/BP2 can lock the active image against corruption while leaving a spare sector for field updates. Mounted in 8-SOIC on the config-flash footprint, it integrates directly with standard master-serial SPI loading schemes.
Recommended
Microcontroller Firmware Boot Memory
For MCU systems that execute or shadow code from external SPI flash, the M25PE40-VMN3TPB provides 512KB of boot code storage at 2.7-3.6V on a single 3.3V rail. The 0.8 ms typical page program lets bootloaders patch small code regions quickly during OTA-style updates, while 4KB subsector erase avoids the multi-hundred-millisecond stalls of 64KB-sector-only devices when updating a few kilobytes of code. More than 100,000 program/erase cycles accommodate repeated in-field firmware refresh. Deep power-down at 1 uA typical suits battery-backed nodes that wake intermittently to fetch instructions. The 8-SOIC 3.90mm footprint fits standard SPI-boot layouts without board change.
Recommended
Industrial Parameter and Calibration Storage
Industrial instruments, motor drives, and sensor nodes store calibration constants, counters, and configuration in non-volatile memory. The M25PE40-VMN3TPB fits this role with byte-programmable 256-byte pages and fine 4KB subsector erase, letting the host rewrite a single parameter block without erasing neighboring data. Endurance beyond 100,000 cycles and software write protection on a 64KB sector basis protect critical factory-calibration regions from accidental modification, while BP0/BP1/BP2 hardware protection resists runaway code. Operation across the industrial 2.7-3.6V rail and the deep power-down 1 uA state support both mains-powered equipment and battery-maintained meters. The 8-SOIC package tolerates standard industrial reflow assembly.
Recommended
Networking Equipment Data Storage
Routers, switches, and line cards use 4Mbit SPI NOR to hold MAC addresses, board serials, and configuration backups. The M25PE40-VMN3TPB's 75 MHz SPI interface keeps config retrieval fast during hot events such as link re-initialization, while the JEDEC 8013h signature supports multi-vendor BOM detection during manufacturing test. Dual-layer write protection - 64KB software sectors plus BP0/BP1/BP2 hardware bits - safeguards immutable identity blocks against malicious or accidental overwrite, a common requirement in network equipment security audits. Given Micron's EOL of low-density NOR, new network BOMs should qualify the Alliance M25PE40-VMN6TP clone which matches the footprint and function exactly.
Recommended
Battery-Powered IoT Sensor Nodes
Wireless sensor nodes and metering endpoints demand near-zero standby drain. The M25PE40-VMN3TPB's deep power-down mode draws only 1 uA typical, so the flash is effectively invisible on the energy budget between measurement cycles. Wake-up and readback at 75 MHz lets the MCU fetch stored coefficients quickly before the radio transmits, minimizing active time. Page-level programming (0.8 ms typical) enables efficient logging of event records into 256-byte pages without large erase windows, and 4KB subsector erase manages wear precisely across the 100,000-cycle endurance budget. The 2.7-3.6V range accepts a single lithium cell via an LDO and the 8-SOIC occupies minimal board area.
Recommended
Consumer Electronics Code and Data
Set-top accessories, displays, and small appliances use 4Mbit serial NOR for bootloader and settings storage. The M25PE40-VMN3TPB offers the cost and footprint the consumer market expects: an 8-SOIC 3.90mm package, single 3.3V supply, and low unit cost (from $0.9377 at LCSC as of 2026-09-02). Page write in 11 ms typical handles user-settings commits imperceptibly, and JEDEC-standard electronic signature simplifies automated production programming with commodity programmers. Designers maintaining these products after Micron's EOL can drop in the Alliance Memory M25PE40-VMN6TP on the identical footprint, preserving existing PCBs, programmers, and firmware without modification.
Recommended
Recommended Products Summary
Engineering reference data for M25PE40-VMN3TPB β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | M25PE40-VMW6TG | M25P40-VMN6TPB | M25PE10-VMN3TPB | M25PE40-VMN6TP | AT45DB041E-SHN-T |
|---|---|---|---|---|---|---|
| Package | 8-SOIC (150-mil, 3.90mm) | 8-SOIC wide (208-mil) | 8-SOIC (150-mil) - same | 8-SOIC (150-mil) - same | 8-SOIC (150-mil) - same | 8-SOIC - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Adesto Technologies |
| Density | 4Mb (512K x 8) | 4Mb | 4Mb | 1Mb | 4Mb | 4Mb |
| Max SPI Clock | 75 MHz | 75 MHz | 75 MHz | 75 MHz | [DATA_NEEDED] | 66 MHz |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 3 V (3V class) | 2.5 V to 3.6 V |
| Erase Granularity | Page / 4KB subsector / 64KB sector / bulk | Page / 4KB / 64KB / bulk | 64KB sector / bulk only | Page / 4KB / 64KB / bulk | Page / 4KB / 64KB / bulk | Page erase (DataFlash) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | [DATA_NEEDED] | Active | Active |
| Deep Power-Down Current | 1 uA typ | 1 uA typ | 1 uA typ | 1 uA typ | [DATA_NEEDED] | [DATA_NEEDED] |
| JEDEC Signature / ID | 8013h | 8013h | 8013h (M25P40 ID) | 8011h | 8013h-compatible | Different (DataFlash ID scheme) |
| Price (qty 1, as of 2026-09-02) | $0.94 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Fine erase granularity (page and 4KB subsector) (vs M25P40-VMN6TPB)
- Active second source with identical footprint (vs M25PE40-VMN6TP)
- 75 MHz SPI clock (vs AT45DB041E-SHN-T)
Design Notes
The M25PE40-VMN3TPB is obsolete per Micron's EOL of all low-density memory. Existing designs should immediately qualify the Alliance Memory M25PE40-VMN6TP, which shares the 8-SOIC footprint and function. Note also the package-suffix trap: VMN3 is the 150-mil narrow SO while VMW6TG is a 208-mil wide SO - they are not footprint-interchangeable despite the identical die. Always verify body width before approving a substitute.
Place a 100 nF ceramic decoupling capacitor within 2 mm of pin 8 (VCC) to pin 4 (VSS), plus a 4.7-10 uF bulk capacitor near the device. Keep the SPI clock (C) trace short and away from Q/D return paths to minimize ringing at 75 MHz; series termination of 22-33 ohms at the driver helps on traces longer than 10 cm. Hold HOLD# and W# high with 10 kohm pull-ups so the device never enters hold or write-protect states spuriously during power-up.
In battery designs, exploit the deep power-down mode: entering it drops consumption to 1 uA typical versus active standby. Estimated: a node sleeping 99% of the time saves roughly (standby - 1 uA) x 8760 h/year - with a typical 50 uA standby this is about 0.43 mAh saved per year, significant for coin-cell nodes. Sequence chip select high before VCC ramps to avoid the device latching a partial command byte during brown-out.
Compliance Information
Compliance data not stated in the provided web results. Micron standard product from 2008 onward is typically RoHS lead-free, but this must be confirmed via the official Micron product page before design-in.
