MT40A1G16TB-062E-ITF - 16Gb DDR4 SDRAM x16 96-FBGA | Micron
部品番号: MT40A1G16TB-062E-ITF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $14.96 | $14.96 |
| 10 | $14.21 | $142.10 |
| 100 | $13.46 | $1,346.00 |
| 500 | $12.71 | $6,355.00 |
| 1,000 | $11.96 | $11,960.00 |
MT40A1G16TB-062E-ITF 概要
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC-defined DDR memory family used as main memory across servers, networking, industrial automation, and high-performance embedded systems. Within the memory hierarchy, it sits as a high-density volatile working memory between the CPU cache and non-volatile storage, offering far higher density and bandwidth than DDR3 while reducing operating voltage and power per transfer.
Key features include 16Gbit density in a single x16 component, an internal bank-group architecture that accelerates random-access performance versus conventional DDR4 bank arrangements, and the 062 speed grade supporting 1.6 GHz operation. Micron implements auto self-refresh, auto precharge, write leveling, data mask, dynamic on-die termination (ODT), and CRC/data bus inversion functions per the DDR4 standard.
Technically, the device uses a 1.2 V core supply typical of the DDR4 generation, with on-die termination, programmable CAS latency, and refresh management (including self-refresh and temperature-compensated refresh) handled by an internal mode-register set configured at initialization. The 96-FBGA ball map follows the standard JEDEC x16 DDR4 footprint, enabling second-source qualification on existing land patterns.
Typical applications include industrial controllers and edge-computing gateways, networking line cards and switch fabrics, test and measurement instruments, and embedded vision or AI acceleration modules that require gigabyte-class working memory over an industrial temperature range.
A key design consideration: DDR4 signal integrity demands length-matched, impedance-controlled routing (typically 40 ohm ODT settings and fly-by or tee topologies) plus careful VREF and power-plane decoupling; verify controller compatibility with the 062 speed grade timing before layout freeze.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with data verified against DigiKey, Mouser, Octopart, and Micron product pages as of 2026-09-27.
ドロップイン代替品: MT40A1G16TB-062E-ITF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MT40A1G16TB-062E:F
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A2G16TB-062E-IT:F
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
AS4C1G16D4-062BIN
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A1G16TB-062E-ITF 最大定格＆電気的特性
| メモリタイプ | DDR4 SDRAM |
| メモリサイズ | 16 Gbit |
| メモリ構成 | 1G x 16 |
| インターフェース | Parallel |
| Clock Frequency | 1.6 GHz |
| Access Time | 19 ns |
| Speed Grade | 062 (DDR4-3200 class) |
| Supply Voltage (VDD) | 1.2 V (DDR4 standard) |
| 動作温度 | -40C to +95C (industrial, IT) |
| パッケージ | 96-FBGA (7.5 mm x 13 mm) |
| 実装タイプ | Surface Mount |
| 特長 | Auto self-refresh, auto precharge, write leveling, data mask, dynamic ODT, CRC |
| RoHS ステータス | Compliant (lead-free, F suffix) |
| Bank Group Architecture | Yes (DDR4 bank groups) |
| Refresh | Self-refresh and auto-refresh |
MT40A1G16TB-062E-ITF 96-fbga (7.5 mm x 13 mm) ピン配置ガイド
MT40A1G16TB-062E-ITF (96-fbga (7.5 mm x 13 mm) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: MT40A1G16TB-062E-ITF.
詳細は データシート をご参照ください。
主な用途
MT40A1G16TB-062E-ITF の用途: 6 件s: Industrial Controllers and Edge Gateways, Networking Line Cards and Switches, Test and Measurement Instruments, Embedded Vision and AI Acceleration Modules, Medical Diagnostic Equipment, Aerospace and UAV Compute Payloads.
Industrial Controllers and Edge Gateways
Industrial PLCs and edge-computing gateways need gigabyte-class working memory that survives factory-floor temperature extremes. The MT40A1G16TB-062E IT:F fits directly: its -40C to +95C industrial rating covers unconditioned enclosures, while the 16Gbit density supports protocol stacks, local data buffering, and containerized edge workloads. Auto self-refresh offloads the host SoC during standby, and temperature-compensated refresh maintains data integrity across the full ambient range. Placed as a single x16 component or four-deep x16 bank on a DDR4 controller, it delivers up to DDR4-3200 class bandwidth (1.6 GHz clock) for deterministic control loops. Dynamic on-die termination simplifies point-to-point routing on two-to-four-layer industrial boards, reducing BOM cost versus DDR3 termination schemes.
おすすめ
Networking Line Cards and Switches
Enterprise switch line cards and network-appliance CPUs require high-bandwidth packet buffering and deep flow tables, making DDR4 the default working-memory choice. The MT40A1G16TB-062E IT:F provides 16Gbit per component at the 062 speed grade (1.6 GHz clock, 19 ns access), and its bank-group architecture accelerates random access patterns typical of packet lookups. Multiple x16 components populate 64-bit or 72-bit ECC buses; the IT industrial range also covers outside-plant and harsh telecom cabinets. Write leveling and CRC functions per the DDR4 standard ensure reliable operation at speed, while auto precharge reduces command overhead in streaming workloads. Qualify against the switch ASIC supported-density table, since MT40A1G16 x16 is a common validated DIMM-component configuration.
おすすめ
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and arbitrary waveform generators stream deep acquisition records into DDR4 memory. The MT40A1G16TB-062E IT:F contributes 16Gbit per component with 1.6 GHz operation, enabling multi-gigabyte capture depth when ganged across a 64/128-bit bus. The -40C to +95C range and self-refresh capability support instrument warm-up phases and battery-backed hold states in portable field instruments. Its 96-FBGA 7.5 x 13 mm footprint keeps the memory cluster compact near the acquisition ASIC, shortening fly-by routing and preserving signal integrity at speed. Data-mask and CRC functions protect long-record integrity, while dynamic ODT adapts termination for both controller writes and reads, easing design of bidirectional acquisition buses common in measurement platforms.
おすすめ
Embedded Vision and AI Acceleration Modules
Embedded vision SoCs and edge-AI accelerators require dense, fast frame buffers and tensor-working memory. The MT40A1G16TB-062E IT:F supplies 16Gbit per package at DDR4-3200 class bandwidth, enough for 4K video pipeline buffering or small CNN inference workloads, and pairs naturally with two or four components for wider buses. The industrial temperature rating suits smart cameras mounted on robots or vehicles, and auto self-refresh preserves frame data during low-power sensor-idle states, extending battery life in portable vision devices. Dynamic ODT and write leveling simplify high-speed routing on dense SOM modules where the 7.5 x 13 mm FBGA footprint minimizes layer count. Verify the SoC boot-mode density table supports 1G x 16 before layout.
おすすめ
Medical Diagnostic Equipment
Point-of-care diagnostics, ultrasound, and patient-monitoring systems accumulate large image or signal datasets that exceed on-chip SRAM capacity. The MT40A1G16TB-062E IT:F provides 16Gbit of DDR4 working memory with a -40C to +95C rating that covers cold-storage transport and autoclave-adjacent environments, plus CRC and data-mask functions supporting data-integrity requirements in medical signal paths. The 1.2 V DDR4 core keeps system power within fanless thermal budgets typical of bedside and portable medical enclosures. Multiple x16 components scale to the 8-16 GB needed by ultrasound beamforming buffers or AI-assisted diagnostics. Self-refresh supports instant-on resume, a common UX requirement in clinic workflows where instruments power-cycle between patients.
おすすめ
Aerospace and UAV Compute Payloads
UAV mission computers and avionics payloads encounter rapid ambient swings from ground heat to high-altitude cold, exactly the envelope covered by the -40C to +95C IT:F rating. The MT40A1G16TB-062E IT:F offers 16Gbit per component at 1.6 GHz for sensor fusion, vision navigation, and log buffering, while auto self-refresh and temperature-compensated refresh preserve memory contents through duty-cycled power states that extend flight endurance. The compact 96-FBGA 7.5 x 13 mm footprint suits SWaP-constrained (size, weight, and power) payloads, and the standard JEDEC x16 ball map enables second-source layouts. For missions requiring full industrial screening, pair with conformal-coated PCB finishes and verify DDR4 signal integrity under vibration via Micron layout guidelines.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MT40A1G16TB-062E-ITF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT40A1G16TB-062E:F | MT40A2G16TB-062E-IT:F | AS4C1G16D4-062BIN |
|---|---|---|---|---|
| Package | 96-FBGA (7.5 x 13 mm) | 96-FBGA (7.5 x 13 mm) - same | 96-FBGA (7.5 x 13 mm) - same | 96-FBGA (7.5 x 13 mm) - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory |
| Density | 16 Gbit (1G x 16) | 16 Gbit (1G x 16) | 32 Gbit (2G x 16) | 16 Gbit (1G x 16) |
| Clock Frequency | 1.6 GHz (062 speed grade) | 1.6 GHz | 1.6 GHz | 1.6 GHz (062) |
| Supply Voltage | 1.2 V (DDR4) | 1.2 V | 1.2 V | 1.2 V |
| New Design Recommendation | Recommended (active) | Recommended (active) | Recommended (active) | Not recommended for new designs (per vendor forum note) |
主な差別化要因
- Industrial temperature range in a standard commercial footprint （vs MT40A1G16TB-062E:F)
- Trusted Micron supply with active lifecycle status （vs AS4C1G16D4-062BIN)
- Upgrade path without PCB respin （vs MT40A2G16TB-062E-IT:F)
設計ノート
At the 062 speed grade (1.6 GHz clock), route all DQ/DQS/DM nets as 50-ohm controlled impedance with intra-byte-group length matching held within +/-10 mil skew, and keep address/command nets matched on a fly-by or tee topology per your memory controller's recommendation. Maintain a continuous reference plane under every DDR4 net and avoid plane splits under the 96-FBGA breakout region. Simulate eye diagrams with IBIS models from Micron before tape-out; DDR4-3200 class margins erode quickly with via stubs longer than 50 mils on inner-layer transitions.
DDR4 operates at 1.2 V for both VDD and VDDQ, so design dedicated VRM rails with fast transient response - DDR4 read/write bursts create microsecond-scale current steps. Place one 0.1 uF ceramic capacitor per VDD ball pair within 2 mm of the FBGA, plus bulk 22-47 uF per component. Generate VREFCA and VREFDQ from clean, well-decoupled sources (a dedicated LDO or precision divider with 1 uF) - VREF ripple directly degrades timing margins. Estimated: a single 16Gb x16 component at DDR4-3200 typically draws 300-500 mA average; budget your VRM per component count.
Confirm your memory controller supports the 1G x 16 density and 062 timing before layout freeze - some SoC boot ROMs validate only specific density/speed combinations. Do not substitute the commercial-grade MT40A1G16TB-062E:F into applications with sub-zero ambient exposure; its 0C to +95C rating will be violated. Follow Micron's DDR4 initialization sequence exactly (power ramp, reset timing, MR register programming, ZQ calibration) - skipping ZQ calibration or violating reset-to-CKE timing is the most common cause of non-boot on first power-up.
コンプライアンス情報
RoHS compliance and lead-free finish indicated by F suffix and distributor listings (DigiKey, Mouser, LCSC). REACH, halogen-free, and conflict-minerals declarations should be confirmed from Micron official product-page compliance documents.
