MT40A1G16TB-062E-ITF - 16Gb DDR4 SDRAM x16 96-FBGA | Micron
부품 번호: MT40A1G16TB-062E-ITF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $14.96 | $14.96 |
| 10 | $14.21 | $142.10 |
| 100 | $13.46 | $1,346.00 |
| 500 | $12.71 | $6,355.00 |
| 1,000 | $11.96 | $11,960.00 |
MT40A1G16TB-062E-ITF 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC-defined DDR memory family used as main memory across servers, networking, industrial automation, and high-performance embedded systems. Within the memory hierarchy, it sits as a high-density volatile working memory between the CPU cache and non-volatile storage, offering far higher density and bandwidth than DDR3 while reducing operating voltage and power per transfer.
Key features include 16Gbit density in a single x16 component, an internal bank-group architecture that accelerates random-access performance versus conventional DDR4 bank arrangements, and the 062 speed grade supporting 1.6 GHz operation. Micron implements auto self-refresh, auto precharge, write leveling, data mask, dynamic on-die termination (ODT), and CRC/data bus inversion functions per the DDR4 standard.
Technically, the device uses a 1.2 V core supply typical of the DDR4 generation, with on-die termination, programmable CAS latency, and refresh management (including self-refresh and temperature-compensated refresh) handled by an internal mode-register set configured at initialization. The 96-FBGA ball map follows the standard JEDEC x16 DDR4 footprint, enabling second-source qualification on existing land patterns.
Typical applications include industrial controllers and edge-computing gateways, networking line cards and switch fabrics, test and measurement instruments, and embedded vision or AI acceleration modules that require gigabyte-class working memory over an industrial temperature range.
A key design consideration: DDR4 signal integrity demands length-matched, impedance-controlled routing (typically 40 ohm ODT settings and fly-by or tee topologies) plus careful VREF and power-plane decoupling; verify controller compatibility with the 062 speed grade timing before layout freeze.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with data verified against DigiKey, Mouser, Octopart, and Micron product pages as of 2026-09-27.
드롭인 대체품: MT40A1G16TB-062E-ITF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MT40A1G16TB-062E:F
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A2G16TB-062E-IT:F
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
AS4C1G16D4-062BIN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A1G16TB-062E-ITF 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| 메모리 크기 | 16 Gbit |
| 메모리 구성 | 1G x 16 |
| 인터페이스 | Parallel |
| Clock Frequency | 1.6 GHz |
| Access Time | 19 ns |
| Speed Grade | 062 (DDR4-3200 class) |
| Supply Voltage (VDD) | 1.2 V (DDR4 standard) |
| 동작 온도 | -40C to +95C (industrial, IT) |
| 패키지 | 96-FBGA (7.5 mm x 13 mm) |
| 실장 유형 | Surface Mount |
| 특징 | Auto self-refresh, auto precharge, write leveling, data mask, dynamic ODT, CRC |
| RoHS 상태 | Compliant (lead-free, F suffix) |
| Bank Group Architecture | Yes (DDR4 bank groups) |
| Refresh | Self-refresh and auto-refresh |
MT40A1G16TB-062E-ITF 96-fbga (7.5 mm x 13 mm) 핀 구성 가이드
MT40A1G16TB-062E-ITF(96-fbga (7.5 mm x 13 mm) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: MT40A1G16TB-062E-ITF.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
MT40A1G16TB-062E-ITF 적합 용도: 6 애플리케이션s: Industrial Controllers and Edge Gateways, Networking Line Cards and Switches, Test and Measurement Instruments, Embedded Vision and AI Acceleration Modules, Medical Diagnostic Equipment, Aerospace and UAV Compute Payloads.
Industrial Controllers and Edge Gateways
Industrial PLCs and edge-computing gateways need gigabyte-class working memory that survives factory-floor temperature extremes. The MT40A1G16TB-062E IT:F fits directly: its -40C to +95C industrial rating covers unconditioned enclosures, while the 16Gbit density supports protocol stacks, local data buffering, and containerized edge workloads. Auto self-refresh offloads the host SoC during standby, and temperature-compensated refresh maintains data integrity across the full ambient range. Placed as a single x16 component or four-deep x16 bank on a DDR4 controller, it delivers up to DDR4-3200 class bandwidth (1.6 GHz clock) for deterministic control loops. Dynamic on-die termination simplifies point-to-point routing on two-to-four-layer industrial boards, reducing BOM cost versus DDR3 termination schemes.
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Networking Line Cards and Switches
Enterprise switch line cards and network-appliance CPUs require high-bandwidth packet buffering and deep flow tables, making DDR4 the default working-memory choice. The MT40A1G16TB-062E IT:F provides 16Gbit per component at the 062 speed grade (1.6 GHz clock, 19 ns access), and its bank-group architecture accelerates random access patterns typical of packet lookups. Multiple x16 components populate 64-bit or 72-bit ECC buses; the IT industrial range also covers outside-plant and harsh telecom cabinets. Write leveling and CRC functions per the DDR4 standard ensure reliable operation at speed, while auto precharge reduces command overhead in streaming workloads. Qualify against the switch ASIC supported-density table, since MT40A1G16 x16 is a common validated DIMM-component configuration.
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Test and Measurement Instruments
Oscilloscopes, logic analyzers, and arbitrary waveform generators stream deep acquisition records into DDR4 memory. The MT40A1G16TB-062E IT:F contributes 16Gbit per component with 1.6 GHz operation, enabling multi-gigabyte capture depth when ganged across a 64/128-bit bus. The -40C to +95C range and self-refresh capability support instrument warm-up phases and battery-backed hold states in portable field instruments. Its 96-FBGA 7.5 x 13 mm footprint keeps the memory cluster compact near the acquisition ASIC, shortening fly-by routing and preserving signal integrity at speed. Data-mask and CRC functions protect long-record integrity, while dynamic ODT adapts termination for both controller writes and reads, easing design of bidirectional acquisition buses common in measurement platforms.
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Embedded Vision and AI Acceleration Modules
Embedded vision SoCs and edge-AI accelerators require dense, fast frame buffers and tensor-working memory. The MT40A1G16TB-062E IT:F supplies 16Gbit per package at DDR4-3200 class bandwidth, enough for 4K video pipeline buffering or small CNN inference workloads, and pairs naturally with two or four components for wider buses. The industrial temperature rating suits smart cameras mounted on robots or vehicles, and auto self-refresh preserves frame data during low-power sensor-idle states, extending battery life in portable vision devices. Dynamic ODT and write leveling simplify high-speed routing on dense SOM modules where the 7.5 x 13 mm FBGA footprint minimizes layer count. Verify the SoC boot-mode density table supports 1G x 16 before layout.
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Medical Diagnostic Equipment
Point-of-care diagnostics, ultrasound, and patient-monitoring systems accumulate large image or signal datasets that exceed on-chip SRAM capacity. The MT40A1G16TB-062E IT:F provides 16Gbit of DDR4 working memory with a -40C to +95C rating that covers cold-storage transport and autoclave-adjacent environments, plus CRC and data-mask functions supporting data-integrity requirements in medical signal paths. The 1.2 V DDR4 core keeps system power within fanless thermal budgets typical of bedside and portable medical enclosures. Multiple x16 components scale to the 8-16 GB needed by ultrasound beamforming buffers or AI-assisted diagnostics. Self-refresh supports instant-on resume, a common UX requirement in clinic workflows where instruments power-cycle between patients.
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Aerospace and UAV Compute Payloads
UAV mission computers and avionics payloads encounter rapid ambient swings from ground heat to high-altitude cold, exactly the envelope covered by the -40C to +95C IT:F rating. The MT40A1G16TB-062E IT:F offers 16Gbit per component at 1.6 GHz for sensor fusion, vision navigation, and log buffering, while auto self-refresh and temperature-compensated refresh preserve memory contents through duty-cycled power states that extend flight endurance. The compact 96-FBGA 7.5 x 13 mm footprint suits SWaP-constrained (size, weight, and power) payloads, and the standard JEDEC x16 ball map enables second-source layouts. For missions requiring full industrial screening, pair with conformal-coated PCB finishes and verify DDR4 signal integrity under vibration via Micron layout guidelines.
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추천 제품 요약
엔지니어링 참조 데이터: MT40A1G16TB-062E-ITF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MT40A1G16TB-062E:F | MT40A2G16TB-062E-IT:F | AS4C1G16D4-062BIN |
|---|---|---|---|---|
| Package | 96-FBGA (7.5 x 13 mm) | 96-FBGA (7.5 x 13 mm) - same | 96-FBGA (7.5 x 13 mm) - same | 96-FBGA (7.5 x 13 mm) - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory |
| Density | 16 Gbit (1G x 16) | 16 Gbit (1G x 16) | 32 Gbit (2G x 16) | 16 Gbit (1G x 16) |
| Clock Frequency | 1.6 GHz (062 speed grade) | 1.6 GHz | 1.6 GHz | 1.6 GHz (062) |
| Supply Voltage | 1.2 V (DDR4) | 1.2 V | 1.2 V | 1.2 V |
| New Design Recommendation | Recommended (active) | Recommended (active) | Recommended (active) | Not recommended for new designs (per vendor forum note) |
주요 차별점
- Industrial temperature range in a standard commercial footprint (vs MT40A1G16TB-062E:F)
- Trusted Micron supply with active lifecycle status (vs AS4C1G16D4-062BIN)
- Upgrade path without PCB respin (vs MT40A2G16TB-062E-IT:F)
설계 노트
At the 062 speed grade (1.6 GHz clock), route all DQ/DQS/DM nets as 50-ohm controlled impedance with intra-byte-group length matching held within +/-10 mil skew, and keep address/command nets matched on a fly-by or tee topology per your memory controller's recommendation. Maintain a continuous reference plane under every DDR4 net and avoid plane splits under the 96-FBGA breakout region. Simulate eye diagrams with IBIS models from Micron before tape-out; DDR4-3200 class margins erode quickly with via stubs longer than 50 mils on inner-layer transitions.
DDR4 operates at 1.2 V for both VDD and VDDQ, so design dedicated VRM rails with fast transient response - DDR4 read/write bursts create microsecond-scale current steps. Place one 0.1 uF ceramic capacitor per VDD ball pair within 2 mm of the FBGA, plus bulk 22-47 uF per component. Generate VREFCA and VREFDQ from clean, well-decoupled sources (a dedicated LDO or precision divider with 1 uF) - VREF ripple directly degrades timing margins. Estimated: a single 16Gb x16 component at DDR4-3200 typically draws 300-500 mA average; budget your VRM per component count.
Confirm your memory controller supports the 1G x 16 density and 062 timing before layout freeze - some SoC boot ROMs validate only specific density/speed combinations. Do not substitute the commercial-grade MT40A1G16TB-062E:F into applications with sub-zero ambient exposure; its 0C to +95C rating will be violated. Follow Micron's DDR4 initialization sequence exactly (power ramp, reset timing, MR register programming, ZQ calibration) - skipping ZQ calibration or violating reset-to-CKE timing is the most common cause of non-boot on first power-up.
규정 준수 정보
RoHS compliance and lead-free finish indicated by F suffix and distributor listings (DigiKey, Mouser, LCSC). REACH, halogen-free, and conflict-minerals declarations should be confirmed from Micron official product-page compliance documents.
