MT40A1G16TB-062E-ITF - 16Gb DDR4 SDRAM x16 96-FBGA | Micron
料号： MT40A1G16TB-062E-ITF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $14.96 | $14.96 |
| 10 | $14.21 | $142.10 |
| 100 | $13.46 | $1,346.00 |
| 500 | $12.71 | $6,355.00 |
| 1,000 | $11.96 | $11,960.00 |
MT40A1G16TB-062E-ITF 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC-defined DDR memory family used as main memory across servers, networking, industrial automation, and high-performance embedded systems. Within the memory hierarchy, it sits as a high-density volatile working memory between the CPU cache and non-volatile storage, offering far higher density and bandwidth than DDR3 while reducing operating voltage and power per transfer.
Key features include 16Gbit density in a single x16 component, an internal bank-group architecture that accelerates random-access performance versus conventional DDR4 bank arrangements, and the 062 speed grade supporting 1.6 GHz operation. Micron implements auto self-refresh, auto precharge, write leveling, data mask, dynamic on-die termination (ODT), and CRC/data bus inversion functions per the DDR4 standard.
Technically, the device uses a 1.2 V core supply typical of the DDR4 generation, with on-die termination, programmable CAS latency, and refresh management (including self-refresh and temperature-compensated refresh) handled by an internal mode-register set configured at initialization. The 96-FBGA ball map follows the standard JEDEC x16 DDR4 footprint, enabling second-source qualification on existing land patterns.
Typical applications include industrial controllers and edge-computing gateways, networking line cards and switch fabrics, test and measurement instruments, and embedded vision or AI acceleration modules that require gigabyte-class working memory over an industrial temperature range.
A key design consideration: DDR4 signal integrity demands length-matched, impedance-controlled routing (typically 40 ohm ODT settings and fly-by or tee topologies) plus careful VREF and power-plane decoupling; verify controller compatibility with the 062 speed grade timing before layout freeze.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with data verified against DigiKey, Mouser, Octopart, and Micron product pages as of 2026-09-27.
直接替换替代料： MT40A1G16TB-062E-ITF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MT40A1G16TB-062E:F
✅ 直接替换📋 参考替代料（不在目录中）
MT40A2G16TB-062E-IT:F
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
AS4C1G16D4-062BIN
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G16TB-062E-ITF 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| 存储容量 | 16 Gbit |
| 存储组织 | 1G x 16 |
| 接口 | Parallel |
| Clock Frequency | 1.6 GHz |
| Access Time | 19 ns |
| Speed Grade | 062 (DDR4-3200 class) |
| Supply Voltage (VDD) | 1.2 V (DDR4 standard) |
| 工作温度 | -40C to +95C (industrial, IT) |
| 封装 | 96-FBGA (7.5 mm x 13 mm) |
| 安装类型 | Surface Mount |
| 特性 | Auto self-refresh, auto precharge, write leveling, data mask, dynamic ODT, CRC |
| RoHS 状态 | Compliant (lead-free, F suffix) |
| Bank Group Architecture | Yes (DDR4 bank groups) |
| Refresh | Self-refresh and auto-refresh |
MT40A1G16TB-062E-ITF 96-fbga (7.5 mm x 13 mm) 引脚配置指南
MT40A1G16TB-062E-ITF（96-fbga (7.5 mm x 13 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT40A1G16TB-062E-ITF.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT40A1G16TB-062E-ITF 适用于 6 应用s: Industrial Controllers and Edge Gateways, Networking Line Cards and Switches, Test and Measurement Instruments, Embedded Vision and AI Acceleration Modules, Medical Diagnostic Equipment, Aerospace and UAV Compute Payloads.
Industrial Controllers and Edge Gateways
Industrial PLCs and edge-computing gateways need gigabyte-class working memory that survives factory-floor temperature extremes. The MT40A1G16TB-062E IT:F fits directly: its -40C to +95C industrial rating covers unconditioned enclosures, while the 16Gbit density supports protocol stacks, local data buffering, and containerized edge workloads. Auto self-refresh offloads the host SoC during standby, and temperature-compensated refresh maintains data integrity across the full ambient range. Placed as a single x16 component or four-deep x16 bank on a DDR4 controller, it delivers up to DDR4-3200 class bandwidth (1.6 GHz clock) for deterministic control loops. Dynamic on-die termination simplifies point-to-point routing on two-to-four-layer industrial boards, reducing BOM cost versus DDR3 termination schemes.
推荐
Networking Line Cards and Switches
Enterprise switch line cards and network-appliance CPUs require high-bandwidth packet buffering and deep flow tables, making DDR4 the default working-memory choice. The MT40A1G16TB-062E IT:F provides 16Gbit per component at the 062 speed grade (1.6 GHz clock, 19 ns access), and its bank-group architecture accelerates random access patterns typical of packet lookups. Multiple x16 components populate 64-bit or 72-bit ECC buses; the IT industrial range also covers outside-plant and harsh telecom cabinets. Write leveling and CRC functions per the DDR4 standard ensure reliable operation at speed, while auto precharge reduces command overhead in streaming workloads. Qualify against the switch ASIC supported-density table, since MT40A1G16 x16 is a common validated DIMM-component configuration.
推荐
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and arbitrary waveform generators stream deep acquisition records into DDR4 memory. The MT40A1G16TB-062E IT:F contributes 16Gbit per component with 1.6 GHz operation, enabling multi-gigabyte capture depth when ganged across a 64/128-bit bus. The -40C to +95C range and self-refresh capability support instrument warm-up phases and battery-backed hold states in portable field instruments. Its 96-FBGA 7.5 x 13 mm footprint keeps the memory cluster compact near the acquisition ASIC, shortening fly-by routing and preserving signal integrity at speed. Data-mask and CRC functions protect long-record integrity, while dynamic ODT adapts termination for both controller writes and reads, easing design of bidirectional acquisition buses common in measurement platforms.
推荐
Embedded Vision and AI Acceleration Modules
Embedded vision SoCs and edge-AI accelerators require dense, fast frame buffers and tensor-working memory. The MT40A1G16TB-062E IT:F supplies 16Gbit per package at DDR4-3200 class bandwidth, enough for 4K video pipeline buffering or small CNN inference workloads, and pairs naturally with two or four components for wider buses. The industrial temperature rating suits smart cameras mounted on robots or vehicles, and auto self-refresh preserves frame data during low-power sensor-idle states, extending battery life in portable vision devices. Dynamic ODT and write leveling simplify high-speed routing on dense SOM modules where the 7.5 x 13 mm FBGA footprint minimizes layer count. Verify the SoC boot-mode density table supports 1G x 16 before layout.
推荐
Medical Diagnostic Equipment
Point-of-care diagnostics, ultrasound, and patient-monitoring systems accumulate large image or signal datasets that exceed on-chip SRAM capacity. The MT40A1G16TB-062E IT:F provides 16Gbit of DDR4 working memory with a -40C to +95C rating that covers cold-storage transport and autoclave-adjacent environments, plus CRC and data-mask functions supporting data-integrity requirements in medical signal paths. The 1.2 V DDR4 core keeps system power within fanless thermal budgets typical of bedside and portable medical enclosures. Multiple x16 components scale to the 8-16 GB needed by ultrasound beamforming buffers or AI-assisted diagnostics. Self-refresh supports instant-on resume, a common UX requirement in clinic workflows where instruments power-cycle between patients.
推荐
Aerospace and UAV Compute Payloads
UAV mission computers and avionics payloads encounter rapid ambient swings from ground heat to high-altitude cold, exactly the envelope covered by the -40C to +95C IT:F rating. The MT40A1G16TB-062E IT:F offers 16Gbit per component at 1.6 GHz for sensor fusion, vision navigation, and log buffering, while auto self-refresh and temperature-compensated refresh preserve memory contents through duty-cycled power states that extend flight endurance. The compact 96-FBGA 7.5 x 13 mm footprint suits SWaP-constrained (size, weight, and power) payloads, and the standard JEDEC x16 ball map enables second-source layouts. For missions requiring full industrial screening, pair with conformal-coated PCB finishes and verify DDR4 signal integrity under vibration via Micron layout guidelines.
推荐
推荐产品汇总
工程参考数据： MT40A1G16TB-062E-ITF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A1G16TB-062E:F | MT40A2G16TB-062E-IT:F | AS4C1G16D4-062BIN |
|---|---|---|---|---|
| Package | 96-FBGA (7.5 x 13 mm) | 96-FBGA (7.5 x 13 mm) - same | 96-FBGA (7.5 x 13 mm) - same | 96-FBGA (7.5 x 13 mm) - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory |
| Density | 16 Gbit (1G x 16) | 16 Gbit (1G x 16) | 32 Gbit (2G x 16) | 16 Gbit (1G x 16) |
| Clock Frequency | 1.6 GHz (062 speed grade) | 1.6 GHz | 1.6 GHz | 1.6 GHz (062) |
| Supply Voltage | 1.2 V (DDR4) | 1.2 V | 1.2 V | 1.2 V |
| New Design Recommendation | Recommended (active) | Recommended (active) | Recommended (active) | Not recommended for new designs (per vendor forum note) |
关键差异点
- Industrial temperature range in a standard commercial footprint （对比 MT40A1G16TB-062E:F)
- Trusted Micron supply with active lifecycle status （对比 AS4C1G16D4-062BIN)
- Upgrade path without PCB respin （对比 MT40A2G16TB-062E-IT:F)
设计说明
At the 062 speed grade (1.6 GHz clock), route all DQ/DQS/DM nets as 50-ohm controlled impedance with intra-byte-group length matching held within +/-10 mil skew, and keep address/command nets matched on a fly-by or tee topology per your memory controller's recommendation. Maintain a continuous reference plane under every DDR4 net and avoid plane splits under the 96-FBGA breakout region. Simulate eye diagrams with IBIS models from Micron before tape-out; DDR4-3200 class margins erode quickly with via stubs longer than 50 mils on inner-layer transitions.
DDR4 operates at 1.2 V for both VDD and VDDQ, so design dedicated VRM rails with fast transient response - DDR4 read/write bursts create microsecond-scale current steps. Place one 0.1 uF ceramic capacitor per VDD ball pair within 2 mm of the FBGA, plus bulk 22-47 uF per component. Generate VREFCA and VREFDQ from clean, well-decoupled sources (a dedicated LDO or precision divider with 1 uF) - VREF ripple directly degrades timing margins. Estimated: a single 16Gb x16 component at DDR4-3200 typically draws 300-500 mA average; budget your VRM per component count.
Confirm your memory controller supports the 1G x 16 density and 062 timing before layout freeze - some SoC boot ROMs validate only specific density/speed combinations. Do not substitute the commercial-grade MT40A1G16TB-062E:F into applications with sub-zero ambient exposure; its 0C to +95C rating will be violated. Follow Micron's DDR4 initialization sequence exactly (power ramp, reset timing, MR register programming, ZQ calibration) - skipping ZQ calibration or violating reset-to-CKE timing is the most common cause of non-boot on first power-up.
合规信息
RoHS compliance and lead-free finish indicated by F suffix and distributor listings (DigiKey, Mouser, LCSC). REACH, halogen-free, and conflict-minerals declarations should be confirmed from Micron official product-page compliance documents.
