MT41K256M16RE-15E:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
部品番号: MT41K256M16RE-15E:D ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.5 | $4,250.00 |
| 1,000 | $7.2 | $7,200.00 |
MT41K256M16RE-15E:D 概要
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 15% compared to standard 1.5V DDR3. It is part of the DDR3 SDRAM family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, 16-bit data bus, 667 MHz clock speed (PC3L-10600), and an access time of 13.5 ns. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It operates over a temperature range of -40°C to 95°C (TC) for the industrial variant, making it suitable for harsh environments.
The MT41K256M16RE-15E:D uses a 30nm DRAM process technology, enabling high density with low power. It features a 1.35V core and I/O supply, with a separate VDDQ for improved signal integrity. The device includes auto-refresh and self-refresh modes for power saving, and supports DLL (delay-locked loop) for precise timing.
Typical applications include embedded computing, networking equipment, industrial automation, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive designs that require large memory capacity.
When designing with this device, ensure proper decoupling of the VDD and VDDQ pins with 0.1uF and 1uF capacitors. The DDR3L interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance.
ドロップイン代替品: MT41K256M16RE-15E:D — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MT41K256M16RE-15E:D （同一形状・フットプリント） — 相違点: CAS Latency, Package, Data Rate, Operating Temperature, Supply Voltage.
クイック比較ツール — 並列比較する代替部品を選択:
MT41K256M16RE-125:D
✅ ドロップイン✓ 在庫あり
$4.19 / 個
データシートを見る →MT41K256M16HA-125:E
✅ ドロップイン✓ 在庫あり
$3.1 / 個
データシートを見る →MT41K256M16HA-107:E
✅ ドロップイン✓ 在庫あり
$5 / 個
データシートを見る →MT41K256M16RE-15E IT:D
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT41K256M16RE-15E:D
✅ ドロップイン✓ 在庫あり
$7.2 / 個
データシートを見る →MT41K256M16RE-15E:D
✅ ドロップイン✓ 在庫あり
$7.2 / 個
データシートを見る →MT41K256M16RE-15E:D 最大定格＆電気的特性
| メモリタイプ | SDRAM - DDR3L |
| メモリサイズ | 4Gb (256M x 16) |
| データレート | 667 MHz (DDR3L-1333) |
| Access Time | 13.5 ns |
| 電源電圧 | 1.283 V to 1.45 V (nominal 1.35 V) |
| パッケージ | 96-FBGA (10x14 mm) |
| 実装タイプ | Surface Mount |
| 動作温度 | -40°C to 95°C (TC) |
| インターフェース | Parallel |
| メモリ構成 | 256M x 16 |
| CASレイテンシ | 11 (typical) |
| Burst Length | 8, 4 |
| ピン数 | 96 |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
MT41K256M16RE-15E:D ピン構成
| ピン A1 | VDD — Power supply (1.35V) |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | DQ1 — Data input/output 1 |
| ピン A4 | VSS — Ground |
| ピン A5 | DQ2 — Data input/output 2 |
| ピン A6 | DQ3 — Data input/output 3 |
| ピン A7 | VDDQ — I/O power supply (1.35V) |
| ピン A8 | DQ4 — Data input/output 4 |
| ピン A9 | DQ5 — Data input/output 5 |
| ピン A10 | VSS — Ground |
| ピン A11 | DQ6 — Data input/output 6 |
| ピン A12 | DQ7 — Data input/output 7 |
| ピン B1 | VDD — Power supply (1.35V) |
| ピン B2 | DQ8 — Data input/output 8 |
| ピン B3 | DQ9 — Data input/output 9 |
| ピン B4 | VSS — Ground |
| ピン B5 | DQ10 — Data input/output 10 |
| ピン B6 | DQ11 — Data input/output 11 |
| ピン B7 | VDDQ — I/O power supply (1.35V) |
| ピン B8 | DQ12 — Data input/output 12 |
| ピン B9 | DQ13 — Data input/output 13 |
| ピン B10 | VSS — Ground |
| ピン B11 | DQ14 — Data input/output 14 |
| ピン B12 | DQ15 — Data input/output 15 |
主な用途
MT41K256M16RE-15E:D の用途: 6 件s: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Medical Devices, Consumer Electronics.
Embedded Computing
The MT41K256M16RE-15E:D provides high-density, low-power memory for embedded systems such as single-board computers and industrial PCs. Its 4Gb capacity and 16-bit interface allow efficient data processing, while the 1.35V operation reduces power consumption, extending battery life in portable devices. The industrial temperature range ensures reliable operation in harsh environments.
おすすめ
Networking Equipment
In networking equipment such as routers and switches, the MT41K256M16RE-15E:D offers the high bandwidth and low latency required for packet buffering and forwarding. Its 667 MHz data rate and 16-bit bus provide sufficient throughput for gigabit Ethernet applications. The low voltage operation helps manage thermal dissipation in dense networking hardware.
おすすめ
Industrial Automation
The MT41K256M16RE-15E:D is ideal for industrial automation systems that require reliable memory for control algorithms and data logging. Its industrial temperature range (-40°C to 95°C) ensures operation in factory environments. The 1.35V supply reduces power consumption, and the 96-ball FBGA package is robust for vibration-prone applications.
おすすめ
Automotive Infotainment
For automotive infotainment systems, the MT41K256M16RE-15E:D provides high-density memory for navigation, multimedia, and connectivity features. Its low power consumption is crucial for vehicle battery life, and the industrial temperature range supports under-hood and cabin environments. The 16-bit interface simplifies PCB design in space-constrained head units.
おすすめ
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the MT41K256M16RE-15E:D offers reliable, low-power memory for data acquisition and processing. Its high density supports complex algorithms, while the 1.35V operation reduces heat generation, which is critical for patient safety. The industrial temperature range ensures consistent performance in clinical settings.
おすすめ
Consumer Electronics
The MT41K256M16RE-15E:D is used in consumer electronics like smart TVs, set-top boxes, and gaming consoles, where high bandwidth and low power are essential. Its 4Gb capacity supports HD video streaming and multitasking. The 1.35V supply helps meet energy efficiency standards, and the compact FBGA package fits slim device designs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MT41K256M16RE-15E:D — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT41K256M16RE-125:D | MT41K256M16HA-125:E | MT41K256M16HA-107:E |
|---|---|---|---|---|
| Package | 96-FBGA (10x14) | 96-FBGA (10x14) | 96-FBGA (10x14) | 96-FBGA (10x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Size | 4Gb (256M x 16) | 4Gb (256M x 16) | 4Gb (256M x 16) | 4Gb (256M x 16) |
| Data Rate | 667 MHz (DDR3L-1333) | 800 MHz (DDR3L-1600) | 800 MHz (DDR3L-1600) | 933 MHz (DDR3L-1866) |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Access Time | 13.5 ns | 13.5 ns | 13.5 ns | 13.5 ns |
| Operating Temperature | -40°C to 95°C | -40°C to 95°C | -40°C to 95°C | -40°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
主な差別化要因
- Low voltage operation (1.35V) （vs MT41K256M16HA-125:E)
- Industrial temperature range （vs MT41K256M16RE-125:D)
- Wide availability （vs MT41K256M16HA-107:E)
設計ノート
For DDR3L memory, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils to ensure signal integrity. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16RE-15E:D requires a clean 1.35V supply. Use a low-dropout regulator or a switching regulator with low ripple. Ensure the power supply can handle peak current spikes during refresh and burst operations. Add bulk capacitance (10uF) near the memory device to stabilize voltage.
Although the device operates at low voltage, ensure adequate airflow or heatsinking in high-temperature environments. The industrial temperature range is -40°C to 95°C, but junction temperature should be kept below 105°C for reliability. Use thermal vias under the FBGA package to improve heat dissipation.
コンプライアンス情報
RoHS compliant and lead-free per datasheet. AEC-Q100 not applicable for DRAM. REACH and conflict minerals status not specified in provided data.
