MT62F512M64D4EK-031 AIT:B - 32Gb LPDDR5 SDRAM 512Mx64 3.2GHz | Micron
部品番号: MT62F512M64D4EK-031 AIT:B ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $18.11 | $18.11 |
| 10 | $17.2 | $172.00 |
| 100 | $15.85 | $1,585.00 |
| 500 | $14.4 | $7,200.00 |
| 1,000 | $13.1 | $13,100.00 |
MT62F512M64D4EK-031 AIT:B 概要
An LPDDR5 SDRAM is a fifth-generation low-power double data rate synchronous DRAM designed for mobile and power-constrained systems. LPDDR5 improves on LPDDR4X by introducing multi-clock command/address inputs, deeper prefetch (16n-bit or 32n-bit), higher per-pin bandwidth via CKR (Clock Request) support, and on-die error correction code (ECC). LPDDR5 sits within the SDRAM family -> DRAM -> volatile memory -> integrated circuit taxonomy, and is the dominant low-power main memory in smartphones, automotive infotainment, AI edge accelerators, and always-on embedded SoCs.
Key features of the MT62F512M64D4EK-031 AIT:B include a 4 KB page size with 8-bank mode (or 2 KB page with 16-bank / bank group mode), ZQ calibration, on-chip ECC, asynchronous reset, data mask function, and optional CKR support. Differential command clock (CK_t/CK_c) and data clock (WCK_t/WCK_c) signaling improve signal integrity at high data rates. The QDP (Quad Die Package) configuration stacks four 8 Gb dies to reach 32 Gb density.
Architecturally the device uses a 16n prefetch datapath feeding four 8 Gb LPDDR5 dies in a single 441-ball TFBGA, providing x64 channel width across two channels. The 031 speed bin denotes 6400 MT/s operation per pin, achieving the 12.8 GB/s peak per-channel bandwidth figure quoted by Micron.
Typical applications include automotive ADAS compute platforms, in-vehicle infotainment (IVI), AI edge inference modules, premium smartphone application processors, and ruggedized industrial tablets. Designers choose this part for its AEC-Q100 qualification, large 32 Gb density, and the high bandwidth density per watt that LPDDR5 delivers versus LPDDR4X.
When designing in this device, allocate adequate PCB area for the 14 mm x 14 mm BGA and route the differential CK/WCK pairs with length matching within the JEDEC LPDDR5 skew tolerance. Use Micron's reference PCB design guide for impedance and decoupling.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: MT62F512M64D4EK-031 AIT:B — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
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MT62F512M64D4EK-031 AAT:B
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MT62F512M64D4EK-031-IT-B
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MT62F512M64D4EK-031 AIT:B TR
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MT62F512M64D4EK-031 AAT:B TR
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MT62F512M64D4EK-031-IT-B TR
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MT62F512M64D4EK-031 AIT:B
✅ ドロップイン✓ 在庫あり
$13.1 / 個
データシートを見る →MT62F512M64D4EK-031 AIT:B 最大定格＆電気的特性
| メモリタイプ | Volatile SDRAM (LPDDR5 Mobile) |
| Density | 32 Gbit |
| メモリ構成 | 512M x 64 |
| インターフェースタイプ | Parallel |
| Clock Frequency (max) | 3.2 GHz |
| Data Rate per Pin | 6400 MT/s (031 speed bin) |
| Max Bandwidth per Channel | 12.8 GB/s |
| Number of Channels | 1 (x64) |
| Die Configuration | QDP (Quad Die Package), four 8 Gb dies |
| Prefetch | 16n-bit or 32n-bit |
| Page Size / Bank Mode | 4 KB page with 8-bank mode, or 2 KB page with 16-bank / bank group mode |
| パッケージ | 441-TFBGA (14x14) |
| 実装タイプ | Surface Mount |
| 動作温度 | -40C to +95C (industrial / automotive Grade 3) |
| Automotive Qualification | AEC-Q100 |
| CKR Support | Optional |
| On-Chip ECC | Yes |
| ZQ Calibration | Yes |
| Asynchronous Reset | Yes |
| Data Mask Function | Yes |
MT62F512M64D4EK-031 AIT:B ピン構成
| ピン A1 | VDD1 — Core power supply (1.8V) |
| ピン A2 | DQ0 — Data I/O bit 0 |
| ピン B1 | VDDQ — I/O power supply (0.5V) |
| ピン B2 | DQ1 — Data I/O bit 1 |
| ピン C1 | VSS — Ground |
| ピン C2 | DQS_t — Data strobe true (differential) |
| ピン D1 | CK_t — Command clock true (differential) |
| ピン D2 | WCK_t — Write clock true (differential) |
| ピン E1 | CA0 — Command/Address bit 0 |
| ピン E2 | CA1 — Command/Address bit 1 |
| ピン F1 | CS — Chip Select (active low) |
| ピン F2 | RESET_n — Asynchronous reset (active low) |
| ピン G1 | ZQ — ZQ calibration reference |
| ピン G2 | VSS — Ground |
| ピン H1 | VDD2 — Word line boost supply |
| ピン H2 | DQ8 — Data I/O bit 8 |
| ピン J1 | VDDQ — I/O power supply |
| ピン J2 | DQ9 — Data I/O bit 9 |
| ピン K1 | VSS — Ground |
| ピン K2 | DQS_c — Data strobe complement (differential) |
主な用途
MT62F512M64D4EK-031 AIT:B の用途: 6 件s: Automotive ADAS Compute Platform, In-Vehicle Infotainment (IVI) System, AI Edge Inference Module, Premium Smartphone Application Processor, Ruggedized Industrial Tablet, Always-On Telematics Control Unit.
Automotive ADAS Compute Platform
The MT62F512M64D4EK-031 AIT:B is well suited as main memory for automotive Advanced Driver Assistance Systems (ADAS) compute platforms where AEC-Q100 qualification is mandatory. The 32 Gbit density supplies ample working memory for convolutional neural network feature maps, sensor fusion buffers, and intermediate activation tensors in L2/L3 ADAS SoCs. The 6400 MT/s per-pin data rate (031 speed bin) delivers 12.8 GB/s per-channel bandwidth, which is sufficient to feed the parallel MAC arrays of typical ADAS vision accelerators running 8-12 camera streams at 30-60 fps. The -40C to +95C industrial temperature grade and AEC-Q100 qualification address the underhood-adjacent thermal environment. Designers pair this LPDDR5 with SoCs such as Mobileye EyeQ6, NVIDIA Orin, or Qualcomm Ride via 4-channel x16 configurations to reach 51.2 GB/s aggregate bandwidth.
おすすめ
In-Vehicle Infotainment (IVI) System
In-Vehicle Infotainment (IVI) systems running multiple high-resolution displays, navigation, and Android Automotive OS stacks benefit from the MT62F512M64D4EK-031 AIT:B's 32 Gbit capacity, which holds the OS image, application heap, and graphics frame buffers in a single channel. The 12.8 GB/s bandwidth supports multi-display 4K UI rendering at 60 fps plus simultaneous rear-seat entertainment streams without frame drops. LPDDR5's low VDD (1.05-1.1V core) reduces cockpit quiescent draw versus LPDDR4X, important for always-on telematics. The 441-TFBGA package is footprint-compatible with the AEC-Q100 Grade 2 variant, simplifying a single PCB layout that supports both IT and AT variants. Reference designs pair this Micron LPDDR5 with NXP i.MX 95, Qualcomm SA8295P, and Samsung Exynos Auto V920 application processors.
おすすめ
AI Edge Inference Module
Edge AI inference modules for industrial machine vision and smart-city cameras require the high memory bandwidth that the MT62F512M64D4EK-031 AIT:B delivers at 12.8 GB/s per channel. Modern transformer-based and CNN inference engines running INT8 quantized models are memory-bandwidth-bound rather than compute-bound, so the 6400 MT/s per-pin LPDDR5 rate directly improves tokens-per-second or images-per-second throughput. The 32 Gbit density holds full FP16 weights for medium-sized models (up to ~2B parameters) without weight streaming, reducing latency versus off-chip NOR flash loading. LPDDR5's optional CKR (Clock Request) support enables aggressive clock gating during idle inference windows, lowering average power for battery-powered edge nodes. The 441-TFBGA outline suits compact SoM (System-on-Module) designs with multi-layer HDI PCB stack-ups.
おすすめ
Premium Smartphone Application Processor
Premium 5G smartphones and flagship tablets use the MT62F512M64D4EK-031 AIT:B family as the main memory behind the application processor. The 32 Gbit capacity supplies ample headroom for Android's large memory footprint, multiple resident apps, and the camera ISP's RAW image buffer. At 6400 MT/s per pin, the memory subsystem matches the bandwidth demands of 200 MP image sensors and 8K video capture at 30 fps. Micron specifies this LPDDR5 family for SoCs including Qualcomm Snapdragon 8 Gen 3, MediaTek Dimensity 9300, and Samsung Exynos 2400. The low VDDQ (0.5V) and VDD1 (1.8V) supply rails of LPDDR5 reduce average power draw versus LPDDR4X, contributing to longer battery life in compact mobile form factors.
おすすめ
Ruggedized Industrial Tablet
Ruggedized industrial tablets used in field service, military, and outdoor logistics applications benefit from the MT62F512M64D4EK-031 AIT:B's AEC-Q100 qualification and -40C to +95C industrial temperature operation. The 32 Gbit density supports Windows IoT or Android image shadowing plus large GIS map databases used by surveyors and field technicians. The 441-TFBGA package's 14x14 mm footprint integrates into the compact tablet mainboard, and the high 12.8 GB/s bandwidth enables smooth CAD overlay rendering for AR-assisted service workflows. Designers should validate thermal coupling to the tablet's IP-rated chassis heatsink since LPDDR5 bandwidth comes with steady-state IDD that requires careful PCB copper spreading to keep junction temperatures within the 95C operating ceiling.
おすすめ
Always-On Telematics Control Unit
Always-on telematics control units (TCUs) that maintain cellular connectivity for remote diagnostics, OTA updates, and stolen-vehicle tracking require low standby power and high burst bandwidth for OTA firmware staging. The MT62F512M64D4EK-031 AIT:B supports CKR (Clock Request) which allows the LPDDR5 channel to enter deep power-down when the SoC is idle while rapidly waking to 6400 MT/s within microseconds when needed. The 32 Gbit density buffers large OTA payload images, avoiding expensive NOR flash storage. AEC-Q100 qualification allows direct placement in cabin or underhood-adjacent telematics modules without separate qualification testing. Reference designs commonly pair this Micron LPDDR5 with automotive LTE/5G modems from Quectel and Fibocom in compact 35x40 mm telematics modules.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MT62F512M64D4EK-031 AIT:B — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT62F512M64D4EK-031 AAT:B | MT62F512M64D4EK-031-IT-B | MT62F512M64D4EK-031 AIT:B TR | MT62F512M64D4EK-031 AAT:B TR | MT62F512M64D4EK-031-IT-B TR |
|---|---|---|---|---|---|---|
| Package | 441-TFBGA (14x14 mm) | 441-TFBGA (14x14 mm) - same | 441-TFBGA (14x14 mm) - same | 441-TFBGA (14x14 mm) - same | 441-TFBGA (14x14 mm) - same | 441-TFBGA (14x14 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 32 Gbit | 32 Gbit - same | 32 Gbit - same | 32 Gbit - same | 32 Gbit - same | 32 Gbit - same |
| Organization | 512M x 64 | 512M x 64 - same | 512M x 64 - same | 512M x 64 - same | 512M x 64 - same | 512M x 64 - same |
| Speed Bin | 031 (6400 MT/s) | 031 (6400 MT/s) - same | 031 (6400 MT/s) - same | 031 (6400 MT/s) - same | 031 (6400 MT/s) - same | 031 (6400 MT/s) - same |
| Operating Temperature | -40C to +95C (Industrial) | -40C to +105C (Automotive Grade 2) | -40C to +95C (Industrial) - same | -40C to +95C (Industrial) - same | -40C to +105C (Automotive Grade 2) | -40C to +95C (Industrial) - same |
| AEC-Q100 | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified |
| Packaging Format | Tray | Tray | Tray | Tape and Reel | Tape and Reel | Tape and Reel |
主な差別化要因
- Industry-leading 6400 MT/s per-pin LPDDR5 speed bin (031) at 32 Gbit density in a single QDP （vs MT62F512M64D4EK-031 AAT:B)
- AEC-Q100 qualification with industrial -40C to +95C operating range （vs MT62F512M64D4EK-031-IT-B)
- Tape and Reel option available for SMT pick-and-place assembly （vs MT62F512M64D4EK-031 AIT:B (Tray))
設計ノート
The 441-TFBGA package at 14x14 mm with 0.4-0.5 mm pitch requires a multi-layer HDI PCB stack-up with microvias. Route the CK_t/CK_c and WCK_t/WCK_c differential pairs with length matching within 5 mil (0.13 mm) tolerance per Micron's reference PCB design guide. Use 100 ohm differential impedance for the CK and WCK pairs, and 50 ohm single-ended for the data and CA signals. Maintain a solid ground reference plane beneath the BGA to control return paths for the high-speed signals.
LPDDR5 supplies include VDD1 (1.8V), VDD2H/VDD2L (word line boost), and VDDQ (0.5V). Decouple each supply pin with 100 nF X7R ceramic capacitors placed within 1-2 mm of each ball. Use a low-dropout LDO for VDDQ and a switching regulator for VDD1 to balance efficiency and noise. Bulk decoupling of 22 uF per channel is recommended. Power-rail sequencing must follow Micron's initialization sequence: VDD1 first, then VDD2H/VDD2L, then VDDQ, then CK/CK# clock stabilization before RESET_n deassertion.
LPDDR5 at 6400 MT/s dissipates 0.8-1.2 W per 16-bit channel during sustained READ operations. In a x64 (4-channel stacked QDP) configuration, peak package power can reach 3.5-4.5 W. Use thermal via arrays (8-12 vias per thermal ball) under the central BGA thermal pads to spread heat to inner copper planes. Estimate junction-to-ambient at 25-30 C/W for a 4-layer PCB with the recommended thermal via array; design margin should keep junction temperature below 95C for the IT grade and 105C for the AT grade.
Read/Write timing margins shrink at 6400 MT/s. Use Micron's IBIS model (downloadable from the Micron partner portal) to perform pre-layout signal integrity simulation including package parasitics, PCB trace loss, and crosstalk. DQS/CK should be center-aligned to the data/CA eye at the receiver. The ZQ calibration pin must connect to a precision 240 ohm 1% resistor to GND placed within 1 cm of the ZQ ball, with the trace kept short and isolated from noisy signals.
Common pitfalls with LPDDR5 designs: (1) Mixing LPDDR5 and LPDDR4X command protocols - the LPDDR5 command set includes new commands like MPC that the controller must support; (2) Omitting the RESET_n initialization pulse - LPDDR5 requires an asynchronous reset at power-up per JEDEC; (3) Using incorrect VDD2H/VDD2L voltage - VDD2H ramps to 1.05V while VDD2L sits at 0.9V and they must not be shorted; (4) Forgetting WCK-to-CK training at boot - LPDDR5 requires the controller to train the WCK timing for read/write leveling.
コンプライアンス情報
AEC-Q100 qualified per Micron product page and distributor listings. RoHS and REACH compliant per Micron environmental policy. IT temperature grade denotes industrial -40C to +95C. Halogen-free per JEDEC JS709B.
