MT62F6G24D156A-001 - 96Gbit Mobile LPDDR5 SDRAM | Micron
部品番号: MT62F6G24D156A-001 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $35.2 | $352.00 |
| 100 | $31.8 | $3,180.00 |
| 500 | $28.5 | $14,250.00 |
| 1,000 | $25.4 | $25,400.00 |
MT62F6G24D156A-001 概要
A Mobile LPDDR5 (Low-Power Double Data Rate 5) SDRAM is a JEDEC-standard volatile memory that operates at low voltage (typically 1.05–1.1 V VDD and 0.9–1.0 V VDDQ) while delivering high data rates through a 16n prefetch architecture and double-data-rate I/O. LPDDR5 sits above LPDDR4X in the low-power DRAM taxonomy, trading slightly higher complexity for substantially higher bandwidth per pin and improved refresh management. It belongs to the wider class of synchronous DRAM, which itself is a subset of volatile memory ICs used as main system memory in compute platforms.
Key features of the MT62F6G24D156A-001 family include high per-pin data rates (up to 6400 MT/s in LPDDR5X-class extensions), deep command/address scrambling for link robustness, on-die ECC for soft-error mitigation, and per-byte VDDQ voltage scaling that minimizes platform power. The device supports both single-rank and multi-rank channel topologies, and the 563-ball BGA exposes a wide 64-bit data interface (x64) for parallel data transfer at multi-GHz effective rates.
The MT62F6G24D156A-001 is built on Micron's advanced 1y/1z-class DRAM process with Through-Silicon-Via (TSV) or wire-bond multi-die stacking in a single package, which yields a small PCB footprint relative to its capacity. The 563-ball BGA integrates ground/VDD/VDDQ decoupling balls, command/address balls, and the data DQ/DQS balls. This architecture is engineered for sustained high-bandwidth operation while keeping DRAM-array refresh current low — critical for always-on and thermally constrained platforms.
Typical applications include high-end smartphone main memory, automotive infotainment and ADAS platforms, AI PC and edge inference accelerators, and 5G mmWave baseband subsystems. The combination of high density (96 Gbit), wide x64 channel width, and LPDDR5 power efficiency makes it particularly suited to designs that require multi-gigabyte system memory in a thermally constrained enclosure.
When designing with this device, follow the Micron LPDDR5/LPDDR5X reference PCB layout for the 563-ball BGA: matched-length routing on the data byte lanes, proper VDD/VDDQ decoupling, and tight skew control on CK_t/CK_c. Confirm thermal headroom under sustained write workloads, as multi-gigabyte transfers at 6400 MT/s can push junction temperature above the commercial-grade limit if airflow is limited.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the official Micron datasheet and PCB-layout application notes.
ドロップイン代替品: MT62F6G24D156A-001 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MT62F1536M64D8CL-026 WT:B
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT62F1G64D4EK-026 WT:C
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT62F6G24D156A-001 WT
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT62F6G24D156A-001 TR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT62F6G24D156A-001 最大定格＆電気的特性
| メモリタイプ | Volatile, Mobile LPDDR5 SDRAM |
| Density | 96 Gbit |
| メモリ構成 | x64 data interface |
| Supply Voltage VDD | 1.05 V to 1.1 V (typical LPDDR5) |
| Supply Voltage VDDQ | 0.9 V to 1.0 V (typical LPDDR5) |
| Data Rate per Pin | Up to 6400 MT/s (LPDDR5/LPDDR5X class) |
| Interface Width | 64-bit (x64) |
| パッケージ | 563-ball BGA |
| 実装タイプ | Surface Mount |
| 動作温度 | -40C to +95C (Automotive grade) |
| Architecture | 16n prefetch, multi-die stack |
| Refresh | Self-refresh and low-power operating modes |
| On-Die ECC | Supported (LPDDR5 feature set) |
| JEDEC Standard | JEDEC LPDDR5 / LPDDR5X |
| RoHS ステータス | Compliant |
MT62F6G24D156A-001 563-ball bga ピン配置ガイド
MT62F6G24D156A-001 (563-ball bga パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: MT62F6G24D156A-001.
詳細は データシート をご参照ください。
主な用途
MT62F6G24D156A-001 の用途: 6 件s: Automotive ADAS Compute Platform, High-End Smartphone Main Memory, Digital Cockpit / Infotainment System, AI PC and Edge Inference Accelerator, 5G mmWave Baseband Subsystem, Augmented Reality (AR) / Wearable Compute.
Automotive ADAS Compute Platform
The MT62F6G24D156A-001 is well-matched to automotive ADAS domain controllers where perception, sensor-fusion, and planning workloads demand high memory bandwidth with strict thermal and reliability constraints. Its 96 Gbit x64 density supplies 12 GB of LPDDR5 main memory in a single device, sufficient for ADAS perception stacks running multi-camera CNNs. The 6400 MT/s per-pin rate yields up to 51.2 GB/s peak bandwidth — comfortably above the 25–35 GB/s typically required by mid-tier ADAS SoCs. The automotive -40C to +95C temperature grade and AEC-Q100-aligned reliability flow let designers place memory close to the SoC, simplifying PCB layout. Pair with a NXP S32G or TI TDA4VM SoC for a complete ADAS compute node.
おすすめ
High-End Smartphone Main Memory
For flagship smartphones, the MT62F6G24D156A-001 supplies 12 GB of LPDDR5 in a compact 563-ball BGA, enabling the dense main-memory configurations required by on-device AI, multi-camera ISP pipelines, and high-refresh-rate displays. Its 6400 MT/s data rate supports the burst bandwidth demanded by 8K video capture and inference of large language models on-device. Per-byte VDDQ scaling reduces I/O power 10–20% versus LPDDR4X, extending battery life during always-on display and 5G standby scenarios. The fine-pitch BGA integrates cleanly into sub-board smartphone layouts when paired with a Qualcomm Snapdragon or MediaTek Dimensity application processor.
おすすめ
Digital Cockpit / Infotainment System
Digital cockpit platforms run simultaneous displays, audio DSP, navigation, and driver-assistance visualization. The MT62F6G24D156A-001 supplies 96 Gbit (12 GB) of LPDDR5 to a cockpit domain controller, enough to drive dual 2K displays plus rear-seat entertainment. The x64 channel at 6400 MT/s reaches 51.2 GB/s peak bandwidth, comfortably handling compositor and GPU memory traffic. Automotive-grade qualification allows under-dash or behind-screen placement where ambient temperatures regularly exceed 85C. According to Micron family datasheets, the device also supports low-power states critical for parked-mode and always-on voice wakeup scenarios.
おすすめ
AI PC and Edge Inference Accelerator
AI PCs and edge inference boxes running quantized LLMs or vision transformers need multi-gigabyte low-latency memory. The MT62F6G24D156A-001 delivers 12 GB of LPDDR5 in a single BGA, reducing memory-channel count on the host PCB and simplifying chassis layout. At 6400 MT/s the effective bandwidth of 51.2 GB/s supports parameter streaming for 7B-class LLMs at usable token rates. The 563-ball BGA footprint allows compact integration into M.2 or mini-ITX edge cards. According to Micron's family data, the LPDDR5 power-saving modes (deep-sleep, retention) lower standby draw, important for always-on edge nodes.
おすすめ
5G mmWave Baseband Subsystem
5G mmWave baseband modems handle multi-gigabit data streams with strict latency budgets. The MT62F6G24D156A-001 buffers baseband IQ samples and protocol-stack state across the high-speed x64 LPDDR5 channel, achieving the throughput needed for downlink carrier aggregation at sub-6 GHz plus mmWave. Its 1.05 V VDD core operation limits power dissipation in thermally dense base-station or small-cell enclosures. The automotive temperature grade also benefits outdoor CPE and roadside units exposed to direct sunlight. Pair with a Qualcomm FSM200xx or Marvell OCTEON baseband processor for a complete mmWave subsystem.
おすすめ
Augmented Reality (AR) / Wearable Compute
AR glasses and wearable compute devices pack substantial processing power into small enclosures near the body, where thermal dissipation is extremely limited. The MT62F6G24D156A-001 supplies 12 GB of LPDDR5 in a compact 563-ball BGA while its per-byte VDDQ scaling keeps average draw low during mixed AR rendering and sensor workloads. The 6400 MT/s bandwidth sustains simultaneous micro-display refresh and on-device hand-tracking inference. Battery-life budgets benefit from LPDDR5 deep-sleep retention modes when the device is idle between interactions. Pair with a Qualcomm XR2 or custom RISC-V AR SoC.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MT62F6G24D156A-001 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT62F1536M64D8CL-026 WT:B | MT62F1G64D4EK-026 WT:C | MT62F6G24D156A-001 WT |
|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 563-ball BGA | 563-ball BGA - same | 563-ball BGA - same | 563-ball BGA - same |
| Density | 96 Gbit | 96 Gbit | 64 Gbit | 96 Gbit |
| Memory Type | Mobile LPDDR5 SDRAM | Mobile LPDDR5 SDRAM | Mobile LPDDR5 SDRAM | Mobile LPDDR5 SDRAM |
| Data Rate per Pin | Up to 6400 MT/s | Up to 6400 MT/s | Up to 6400 MT/s | Up to 6400 MT/s |
| Interface Width | x64 | x64 | x64 | x64 |
| Operating Temperature | -40C to +95C (Automotive) | -25C to +85C (Industrial) | -25C to +85C (Industrial) | -40C to +95C (Automotive) |
| JEDEC Standard | LPDDR5 / LPDDR5X | LPDDR5 / LPDDR5X | LPDDR5 / LPDDR5X | LPDDR5 / LPDDR5X |
主な差別化要因
- Automotive temperature grade (-40C to +95C) at full 96 Gbit density （vs MT62F1G64D4EK-026 WT:C)
- Industry-standard JEDEC LPDDR5/LPDDR5X compliance （vs Vendor-proprietary mobile DRAM)
- Per-byte VDDQ scaling and 16n prefetch （vs LPDDR4X-based alternatives)
設計ノート
Follow Micron's 563-ball BGA reference layout for the MT62F6G24D156A-001: matched-length routing on each of the eight DQ byte lanes, with the DQ, DQS_t/DQS_c skewed within 5 ps per lane. Use a 100 Ω differential impedance for CK_t/CK_c and 50 Ω single-ended for address/command. Place decoupling capacitors (typically 0.1 µF plus 1 µF) on the VDD/VDDQ balls within 1 mm of the BGA escape.
Run SI simulation on the data byte lanes with the IBIS model for the specific Micron die revision. Maintain a maximum of two vias per DQ/DQS trace to minimize impedance discontinuities; keep reference-plane continuity under the BGA escape region. Add a series damping resistor on CK_t/CK_c if reflections exceed 5% on the TDR plot. Use fly-by routing for command/address to simplify timing closure.
Estimated: at a continuous 51.2 GB/s read workload on the x64 channel, package self-heating can push junction temperature above 95C without airflow. For automotive under-hood or behind-display placements, attach the BGA thermal balls to an inner copper plane with thermal vias to a bottom-side heatsink. Confirm with Micron's thermal model for the 563-ball package before locking mechanical design.
Do not substitute a non-automotive LPDDR5 die into an automotive platform that expects the -001 temperature grade — Micron's AEC-Q100 reliability flow covers specific die revisions only. Always confirm the exact ordering code (including speed-bin suffix and WT/B/C packing designator) before issuing the production BOM. Re-validate firmware init sequence when changing density bins (96 Gbit vs 64 Gbit) even within the same package family.
コンプライアンス情報
Per Micron automotive LPDDR5 product family documentation: RoHS compliant, lead-free, halogen-free, and AEC-Q100 qualified for automotive temperature grade. Conflict-minerals declaration available from Micron's corporate-responsibility page.
