UCC23513DWY - 4.5A/5.3A 5.7kVrms Isolated Gate Driver | TI
部品番号: UCC23513DWY ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.65 | $1.65 |
| 10 | $1.4 | $14.00 |
| 100 | $1.15 | $115.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.82 | $820.00 |
UCC23513DWY 概要
An isolated gate driver is a galvanically isolated amplifier that translates a low-voltage control logic signal (typically 3.3 V or 5 V from a microcontroller or DSP) into a high-current drive signal capable of switching a power semiconductor such as an IGBT, SiC MOSFET, or GaN FET. In the broader taxonomy, isolated gate drivers belong to the power management category between gate driver ICs and isolators, and the UCC23513 specifically combines both functions in a single package, providing reinforced isolation per IEC 60747-17 (certification to be confirmed) while driving the gates of high-voltage power devices in switch-mode power supplies and motor drives.
Key features include a maximum 33 V output driver supply voltage, 8 V or 12 V VCC UVLO options, rail-to-rail output swing, 105 ns maximum propagation delay, 25 ns maximum part-to-part delay matching, 35 ns maximum pulse-width distortion, and 150 kV/µs minimum common-mode transient immunity (CMTI). The single-channel 6-SOIC package provides minimum 8.5 mm creepage and clearance suitable for reinforced isolation in industrial and renewable energy systems.
The device uses TI's proprietary capacitive coupling isolation technology, replacing the LED/photodiode chain used in optocouplers. Compared to optocouplers, the UCC23513 offers superior temperature stability (no CTR drift over temperature or aging), lower propagation delay variation, and higher CMTI. The integrated 8 V or 12 V VCC UVLO with hysteresis protects SiC and IGBT power devices from partial-turn-on during startup.
Typical applications include driving IGBTs in industrial motor drives, driving SiC MOSFETs in EV traction inverters and solar inverters, driving GaN FETs in telecom and server power, and replacing legacy optocoupler gate drivers in welding inverters and UPS systems. The wide VCC range supports both standard 15 V and emerging 12 V SiC/IGBT gate drive rails.
When designing with the UCC23513DWY, place the VCC bypass capacitor directly at pins 5-6 with a 1 µF X7R ceramic or larger to handle peak gate charge currents. The driver side does not require isolated DC/DC bias - only a single VCC supply per channel is needed for the output stage; input side is powered directly from the controller side supply.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from TI's UCC23513 datasheet and reference designs, providing engineering context not duplicated in the manufacturer documentation alone.
ドロップイン代替品: UCC23513DWY — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: UCC23513DWY （同一形状・フットプリント） — 相違点: Input Compatibility, Operating Temperature Range, Package.
クイック比較ツール — 並列比較する代替部品を選択:
UCC23513BDWYR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
UCC23513DWYR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
UCC23313BQDRQ1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
TLP5754(TP,E(O
✅ ドロップイン📋 参考代替品（カタログ未掲載）
ACPL-W480-000E
✅ ドロップイン📋 参考代替品（カタログ未掲載）
SI8271AB-ISR
✅ ドロップイン✓ 在庫あり
$2.45 / 個
データシートを見る →UCC23513DWY 最大定格＆電気的特性
| Isolation Type | Capacitive Coupling (reinforced) |
| Isolation Voltage (RMS) | 5700 V |
| Peak Source Output Current | 4.5 A |
| Peak Sink Output Current | 5.3 A |
| Number of Channels | 1 |
| Output Driver Supply Voltage (max) | 33 V |
| VCC UVLO Option (B-suffix) | 8 V |
| VCC UVLO Option (no suffix) | 12 V |
| Propagation Delay (max) | 105 ns |
| Part-to-Part Delay Matching (max) | 25 ns |
| Pulse-Width Distortion (max) | 35 ns |
| Common-Mode Transient Immunity (min) | 150 kV/us |
| Output Swing | Rail-to-Rail |
| パッケージ | 6-SOIC (DWY) wide-body |
| 動作温度範囲 | -40C to +125C |
| Input Compatibility | Opto-compatible (drop-in replacement for opto-isolated gate drivers) |
| RoHS ステータス | Compliant |
UCC23513DWY ピン構成
| ピン 1 | VCC — Input-side power supply (3.3 V or 5 V) |
| ピン 2 | IN+ — Non-inverting PWM input (anode-equivalent for opto compatibility) |
| ピン 3 | IN- — Inverting PWM input (cathode-equivalent for opto compatibility) |
| ピン 4 | GND1 — Input-side ground reference |
| ピン 5 | VCC2 — Output-side driver supply (up to 33 V) |
| ピン 6 | OUT — Gate-drive output (rail-to-rail swing) |
主な用途
UCC23513DWY の用途: 6 件s: Industrial Motor Drive IGBT Gate Drive, SiC MOSFET Gate Drive in Solar Inverters, EV Traction Inverter Gate Drive, Server / Telecom Switching Power Supply, Welding Inverter IGBT Gate Drive, Industrial UPS / Inverter Power Stage.
Industrial Motor Drive IGBT Gate Drive
Drives 600 V/1200 V IGBT modules in industrial variable-frequency drives (VFDs) up to several hundred kW. The UCC23513DWY's 5.7 kVrms reinforced isolation satisfies the creepage/clearance required by IEC 61800-5-1 for 600 V drive stages, while 4.5 A source / 5.3 A sink peak output drives 100-200 A class IGBT modules within their gate-charge time budget. The 150 kV/us CMTI rating survives dV/dt transients generated by hard-switching 600 V IGBTs, and the 8 V or 12 V UVLO option protects modules from partial-turn-on during bus voltage ramp-up. Place the UCC23513DWY between the MCU PWM output and each IGBT gate with a 1 uF X7R bypass on VCC.
おすすめ
SiC MOSFET Gate Drive in Solar Inverters
Drives 1200 V SiC MOSFET power stages in 50-150 kW three-phase solar inverters and energy-storage converters. The UCC23513DWY's rail-to-rail output swing supports 18 V SiC gate drive with up to 33 V driver supply headroom, and built-in 8 V UVLO option (B-suffix variant) precisely matches SiC MOSFET gate thresholds. The capacitive isolation eliminates the aging of optocoupler-based designs - critical for solar inverters rated for 25-year service life. The 25 ns part-to-part matching enables synchronous three-phase switching without skew-induced circulating currents that would reduce CEC efficiency below 98%.
おすすめ
EV Traction Inverter Gate Drive
Drives 750 V/800 V SiC MOSFET traction inverter power stages in electric-vehicle powertrains. The UCC23513DWY's 5.7 kVrms reinforced isolation and 8 mm SO-6 creepage handle the dV/dt stress of 800 V bus switching at 50 kHz, while the 4.5 A peak source can charge a SiC MOSFET gate in 25-40 ns - fast enough to limit switching losses to under 1% of bus power. The wide -40C to +125C operating range handles underhood and on-motor mounting requirements, and the 105 ns propagation delay enables precise torque-control loop timing. The capacitive input stage is intrinsically immune to automotive EMI/EMC stress.
おすすめ
Server / Telecom Switching Power Supply
Drives primary-side switches in 48 V-input telecom and hyperscale-server isolated DC-DC converters up to 3 kW. The UCC23513DWY's capacitive isolation is preferred over optocouplers in datacenter power supplies because the >10-year CTR stability eliminates a long-term failure mode that affects reliability metrics such as FIT rate. The 4.5 A source current can drive 200 V GaN FETs or 650 V GaN FETs to peak performance, and the 33 V driver supply accommodates 12 V GaN gate-drive rails directly without a separate charge pump. The 150 kV/us CMTI rejects the steep edges of high-frequency LLC and totem-pole PFC stages.
おすすめ
Welding Inverter IGBT Gate Drive
Drives IGBT modules in inverter-based welding power supplies up to 600 A peak output. The UCC23513DWY's reinforced 5.7 kVrms isolation is mandatory in welding inverters because the secondary-side return path can float at hazardous voltages and the IEC 60974 / IEC 62135 reinforced-isolation requirement applies. The 4.5 A peak output drive supports 600 V/600 A IGBT modules in the main current-controlled loop, and the 25 ns part-to-part matching enables precise current-shaping for arc stability. The optocoupler-compatible input allows one-for-one replacement of legacy HCPL-3120/ACPL-332J designs during field-service upgrades.
おすすめ
Industrial UPS / Inverter Power Stage
Drives low-frequency IGBT modules in online-UPS and industrial-inverter power stages rated 10-500 kVA. The UCC23513DWY's reinforced isolation voltage of 5.7 kVrms in a compact 6-SOIC package reduces gate-drive board area by 50% compared to discrete opto-driver implementations, enabling smaller UPS form factors. The 150 kV/us CMTI handles the slow-but-massive dV/dt transients of large IGBT modules, and the rail-to-rail output reduces shoot-through susceptibility when the system enters bypass mode. Pin-for-pin compatibility with legacy opto-isolated drivers makes this part a one-for-one replacement in service upgrades.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: UCC23513DWY — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | UCC23513BDWYR | UCC23513DWYR | UCC23313BQDRQ1 | TLP5754(TP,E(O | ACPL-W480-000E | Si8271AB-IS |
|---|---|---|---|---|---|---|---|
| Package | 6-SOIC (DWY) wide-body | 6-SOIC (DWY) wide-body - same | 6-SOIC (DWY) wide-body - same | SO-6 wide-body - same | 6-SOIC wide-body - same | 6-SO wide-body - same | 6-SOIC (NB) wide-body - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Toshiba | Broadcom | Skyworks Solutions |
| Isolation Type | Capacitive (reinforced) | Capacitive (reinforced) | Capacitive (reinforced) | Capacitive (reinforced) | Optocoupler (LED/photodiode) | Optocoupler (LED/photodiode) | Capacitive (reinforced) |
| Peak Source Current | 4.5 A | 4.5 A | 4.5 A | 4.5 A (estimated) | 4.0 A | 4.5 A | 4.0 A |
| Peak Sink Current | 5.3 A | 5.3 A | 5.3 A | 5.3 A (estimated) | 4.0 A | 4.5 A | 4.0 A |
| Automotive (AEC-Q100) | No | No | No | Yes (Q1 suffix) | No | No | No |
主な差別化要因
- Capacitive isolation eliminates optocoupler CTR aging （vs ACPL-W480-000E)
- 150 kV/us CMTI vs typical 25 kV/us in optocouplers （vs TLP5754(TP,E(O)
- 105 ns max propagation delay vs 150-200 ns in optocouplers （vs TLP5754(TP,E(O and ACPL-W480-000E)
- Pin-to-pin SO-6 drop-in upgrade for opto designs （vs TLP5754(TP,E(O and ACPL-W480-000E)
設計ノート
Place a 1 uF X7R ceramic bypass capacitor as close as possible to the output-side VCC2 (pin 5) and GND2 (pin 6) to handle peak gate-charge currents. The peak source/sink of 4.5/5.3 A can create voltage transients on VCC2 of several hundred mV if the local bypass is insufficient, which may re-trigger UVLO. A 0.1 uF X7R or X5R in parallel extends high-frequency decoupling to 100 MHz for SiC MOSFET switching edges.
Maintain a 4 mm or wider clearance gap under the UCC23513DWY between input-side copper (pins 1-4) and output-side copper (pins 5-6) to preserve the 5.7 kVrms reinforced isolation. Cut out all copper layers directly beneath the body to maximize creepage along the package surface; the wide-body DWY package provides 8.5 mm but PCB layout is required to maintain this distance. Conformal coating (e.g., HumiSeal 1B73) further improves isolation in humid environments but requires a uniform barrier coat around the package.
The 105 ns propagation delay and 25 ns part-to-part matching support switching frequencies up to several hundred kHz in three-phase inverter topologies. For three-phase designs, select parts with the same date code and lot to minimize mismatch; using parts from different lots can introduce 20-30 ns skew between high-side and low-side gate signals, causing shoot-through and reduced efficiency.
Estimated: At 50 kHz switching frequency with 50 nC gate charge, the average driver supply current is approximately 50 kHz x 50 nC = 2.5 mA per channel. However, peak currents during gate-charge reach 4.5 A for tens of nanoseconds; undersizing the VCC2 decoupling capacitor can cause VCC2 droop and false UVLO triggers. Reference designs in TI's UCC23513 EVM use a 1 uF X7R + 0.1 uF combination for robust operation. Verify VCC2 is sized for the worst-case gate-charge current at your switching frequency.
コンプライアンス情報
RoHS compliant and lead-free per TI product page. AEC-Q100 qualification NOT applicable to standard DWY variant - select UCC23513QDWYQ1 or UCC23313BQDRQ1 for automotive. Reinforced isolation per IEC 60747-17 (certification to be confirmed in datasheet).
