UCC27524AQDRQ1 - Dual 5A Low-Side Gate Driver, AEC-Q100 | TI
部品番号: UCC27524AQDRQ1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.98 | $0.98 |
| 10 | $0.88 | $8.80 |
| 100 | $0.78 | $78.00 |
| 500 | $0.71 | $355.00 |
| 1,000 | $0.65 | $650.00 |
UCC27524AQDRQ1 概要
A gate driver is a power management IC that bridges the low-voltage control domain (MCU or PWM controller outputs) and the high-power switching domain (MOSFET and IGBT gates). Within the hierarchy of power electronics, the low-side gate driver sits between the PWM controller and the power transistor, amplifying logic-level signals into high-peak-current gate pulses that charge and discharge the MOSFET gate capacitance quickly enough to minimize switching losses. The gate driver family therefore sits under power management ICs, alongside voltage regulators and motor drivers.
Key features of the UCC27524AQDRQ1 include 5A/5A peak source/sink current, high-speed switching with fast rise and fall times suitable for high-frequency power converters, dual non-inverting channels with TTL/CMOS-compatible inputs, and tolerance of -5V directly on the input pins for robustness against switch-node ringing and negative spikes. According to the TI product page, the UCC27524A-Q1 is a variant of the UCC2752x family, adding negative input capability over the base UCC2752x parts.
Architecturally, the device uses a bipolar/CMOS output stage that sinks current more strongly than it sources on the pulldown path, which helps hold the MOSFET gate low during Miller-plateau events and prevents dv/dt-induced turn-on. The dual-channel design drives two switches (for example, two paralleled FETs or two legs of a push-pull stage) from a single 8-pin IC, saving board space versus two single-channel drivers.
Typical applications include automotive DC-DC converters, motor inverters, solar inverters, telecom and server power supplies, and class-D audio amplifier output stages - anywhere a PWM controller needs to switch MOSFETs or IGBTs at high frequency with low switching losses.
A key design consideration: the SOIC-8 package's thermal and ground-path inductance limits practical peak performance, so placing the driver's ground pin and the MOSFET source on the same tight ground loop, with a local 0.1uF to 1uF VDD decoupling capacitor plus bulk capacitance, is essential to realize the full 5A peak current.
This page synthesizes distributor pricing, drop-in alternatives, pinout data, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: UCC27524AQDRQ1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
UCC27524D
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
UCC27523QDRQ1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
UCC27424DR
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
UCC27524AQDRQ1
✅ ドロップイン✓ 在庫あり
$0.65 / 個
データシートを見る →UCC27524AQDRQ1 最大定格＆電気的特性
| 出力構成 | Dual-channel, non-inverting, low-side |
| Peak Output Current (Source) | 5 A per channel |
| Peak Output Current (Sink) | 5 A per channel |
| VDD Supply Range | up to 20 V |
| UVLO Threshold | 4 V (typ, per TI.com) |
| Negative Input Voltage Handling | -5 V directly at input pins |
| Input Type | TTL/CMOS compatible |
| Driven Devices | MOSFET and IGBT power switches |
| パッケージ | SOIC-8 (D), surface mount |
| 実装タイプ | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified |
| RoHS ステータス | Compliant (per distributor listings) |
| Family | UCC2752x |
UCC27524AQDRQ1 ピン構成
| ピン 1 | IN_A — Channel A input (TTL/CMOS compatible) |
| ピン 2 | GND — Ground reference |
| ピン 3 | IN_B — Channel B input (TTL/CMOS compatible) |
| ピン 4 | OUT_B — Channel B gate-drive output |
| ピン 5 | VDD — Driver supply voltage (up to 20 V) |
| ピン 6 | NC — Not connected (per datasheet) |
| ピン 7 | NC — Not connected (per datasheet) |
| ピン 8 | OUT_A — Channel A gate-drive output |
主な用途
UCC27524AQDRQ1 の用途: 6 件s: Automotive DC-DC Converters, Motor Inverters and Drives, Solar and Grid-Tied Inverters, Telecom and Server Power Supplies, Class-D Audio Amplifier Output Stages, Industrial Power Supplies and Battery Chargers.
Automotive DC-DC Converters
In automotive board-net and powertrain DC-DC converters, the UCC27524AQDRQ1 drives the low-side MOSFETs of synchronous buck or boost stages from a PWM controller. Its AEC-Q100 qualification satisfies automotive quality flows, while the 5A/5A peak drive charges and discharges large power-MOSFET gate capacitances quickly, keeping switching losses low at the 200 kHz to 500 kHz frequencies typical of 12V-to-48V converters. The -5V input tolerance protects the driver against the gate-loop ringing that automotive environments with long harnesses and severe transients routinely produce. Place the driver within millimeters of the MOSFET gate resistors with a tight VDD-to-GND ceramic decoupling loop; the low-inductance return path is what allows the full 5A peak current to reach the gate rather than being lost to loop inductance.
おすすめ
Motor Inverters and Drives
Low-voltage motor drives (BLDC, PMSM, brushed) use the UCC27524AQDRQ1 to drive two low-side MOSFETs or IGBTs per IC in half-bridge legs where the low-side switch is ground-referenced. The dual-channel configuration handles two switches from a single 8-pin package, and the strong 5A sink current holds the gate low through the Miller plateau during high dv/dt events, preventing spurious turn-on that would cause shoot-through conduction losses. The -5V input robustness is valuable near the inverter switch node where parasitic ringing couples into control grounds. Designers should size gate resistors to balance switching speed against EMI, and verify that the driver's power dissipation (VDD x average gate-charge current x switching frequency) stays within the SOIC-8 thermal limits at maximum motor current and PWM frequency.
おすすめ
Solar and Grid-Tied Inverters
In solar micro-inverters and string-inverter auxiliary power stages, high-frequency switching of MOSFETs and IGBTs demands gate drivers with strong peak current and good noise immunity. The UCC27524AQDRQ1's 5A/5A drive supports fast transition edges that reduce switching loss - directly improving conversion efficiency and thermal headroom in sealed outdoor enclosures. Its -5V input handling withstands the negative spikes caused by transformer leakage inductance in isolated converter topologies such as active-clamp forward and push-pull stages. Because the driver is low-side and non-isolated, it is applied on the ground-referenced secondary-side switches of the power stage; isolated drivers handle high-side positions. Verify SOIC-8 thermal dissipation at the system's maximum switching frequency and gate charge before finalizing the design.
おすすめ
Telecom and Server Power Supplies
Rectifier and intermediate-bus converters in telecom base stations and data-center power shelves use the UCC27524AQDRQ1 to drive low-side synchronous rectifier MOSFETs and primary-side switches in LLC and half-bridge converters. High switching frequencies (several hundred kHz) demand the driver's fast propagation and strong 5A sink current to minimize body-diode conduction time in synchronous rectifiers, improving overall efficiency at kilowatt-class power levels. The 20V VDD rating accommodates standard gate-drive rails for logic-level and standard-threshold MOSFETs. In high-density power shelves where airflow is limited, estimate driver dissipation as VDD multiplied by total gate charge times switching frequency and confirm the SOIC-8 junction temperature stays within limits; the DGN PowerPAD variant is an option if thermal margin is tight.
おすすめ
Class-D Audio Amplifier Output Stages
Class-D audio amplifiers switch output MOSFETs at 300 kHz to 1 MHz, and gate-drive speed directly affects total harmonic distortion and efficiency. The UCC27524AQDRQ1's dual 5A channels drive the two low-side FETs of a half-bridge or the ground-referenced devices of a full bridge with matched, fast edges that minimize dead-time distortion. The -5V input tolerance is particularly useful in audio power stages, where high rail voltages and transformer-coupled layouts generate significant negative ring on gate circuits during hard switching. Since audio designs often run high rail voltages, the driver should sit on the low-side ground-referenced positions with isolated or high-side drivers handling complementary switches. Tight gate-loop layout keeps the 5A peak current effective and limits EMI radiated into the analog signal path.
おすすめ
Industrial Power Supplies and Battery Chargers
Industrial AC-DC front ends, welding power supplies, and high-current battery chargers use IGBTs and MOSFETs that require gate drivers with ampere-class peak current. The UCC27524AQDRQ1 drives two ground-referenced switches with 5A/5A capability, and its tolerance of IGBT gate-charge requirements makes it applicable where the switching device is an IGBT rather than a MOSFET - TI explicitly rates the device for both. The -5V input robustness suits factory-floor environments with high electrical noise from motors and contactors. Designers must confirm the IGBT's total gate charge against the driver's average current capability at the operating frequency, since IGBT gate charges are typically larger than MOSFET charges and average driver current scales as Qg times frequency. Keep the VDD decoupling loop tight to sustain peak currents during turn-on.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: UCC27524AQDRQ1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | UCC27524D | UCC27523QDRQ1 | UCC27424DR | UCC27524AQDRQ1 (Rochester) |
|---|---|---|---|---|---|
| Package | SOIC-8 (D) | SOIC-8 (D) - same | SOIC-8 (D) - same | SOIC-8 (D) - same | SOIC-8 (D) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Rochester Electronics (authorized continuation) |
| Peak Output Current | 5 A / 5 A | 5 A / 5 A | 5 A / 5 A | 4 A / 4 A | 5 A / 5 A |
| Automotive Grade (AEC-Q100) | Yes | No | Yes (Q1) | No | Yes |
| VDD Range | up to 20 V | up to 20 V | up to 20 V | up to 18 V | up to 20 V |
| Input Configuration | Dual non-inverting | Dual non-inverting | Dual channel (input logic differs - verify) | Dual TTL-input variant | Dual non-inverting - identical |
主な差別化要因
- AEC-Q100 automotive qualification in a commodity 8-pin footprint （vs UCC27524D)
- -5V direct input voltage robustness （vs UCC27424DR)
- Full 5A/5A peak drive versus older same-footprint family parts （vs UCC27424DR)
設計ノート
Minimize the gate-drive loop: place the UCC27524AQDRQ1 as close as possible to the driven MOSFET, route OUT and GND as a tight pair, and keep gate resistors close to the driver. The 5A peak current capability is only realized when loop inductance is low; long, thin gate traces cause gate ringing, slower edges, and possible spurious turn-on. Use a solid ground plane under the driver and connect the GND pin directly with multiple vias. This follows the layout guidance in the TI UCC27524A-Q1 datasheet PCB layout section.
Estimated: driver dissipation equals VDD x average gate-drive current, where average current is approximately total gate charge (Qg) x switching frequency (plus quiescent current). For example, two MOSFETs of 60nC each at 400 kHz draw roughly 48mA average, dissipating about 0.6W at 12V VDD - approaching SOIC-8 thermal limits without copper pour. Verify with the datasheet theta-JA and provide at least a modest copper area on the SOIC-8 lands; consider the DGN PowerPAD variant if thermal margin is tight.
Do not operate below the UVLO threshold: with a 4V typical UVLO, a VDD rail that sags during switching transients can cause the driver to release the output and leave the MOSFET half-on, causing heating failure. Provide adequate local VDD decoupling (0.1uF to 1uF ceramic at the pins plus bulk capacitance). Also note the -5V rating applies only to input pin stress robustness - normal logic-high/low thresholds still apply for switching operation, so do not intentionally bias inputs negative in steady state.
コンプライアンス情報
AEC-Q100 automotive qualification per TI Q1 designation. RoHS compliance indicated by distributor listings; REACH and halogen-free status not stated in provided data.
