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AT17LV512-10JU - 512Kb FPGA Config EEPROM, Altera Pinout | Microchip
The Microchip Technology AT17LV512-10JU is a 512-Kbit (64K×8) serial EEPROM designed as a configuration memory for Altera-pinout-compatible FPGAs, housed in a 20-pin PLCC (J-Lead) package and rated for 10 MHz configuration clock operation. It supports dual-voltage operation at 3.3V (3.0V–3.6V) and 5.0V (4.5V–5.5V), enabling direct connection to legacy 5V FPGA configuration pins as well as modern 3.3V rails. A configuration EEPROM is a non-volatile serial memory that stores FPGA bitstream images and serially shifts them into the FPGA during power-up via a dedicated configuration interface. Within the broader taxonomy, configuration EEPROMs belong to memory ICs (specifically the EEPROM sub-family), then to programmable configuration PROMs, and ultimately to FPGA configuration devices. They sit at the boundary between the system MCU/flash storage and the FPGA, providing instant-on bitstream delivery without external flash controllers. The AT17LV family specifically targets FPGAs whose configuration interface uses the Altera (now Intel/Altera) pinout convention, making the AT17LV512-10JU a drop-in for that pinout. Key features include 512 Kbit of user-programmable storage organized as 64K×8, in-system programmability (ISP) over a two-wire bus, three-state DATA output for bus sharing, and a RESET/OE + nCS control pair. The RESET/OE pin drives the address counter and tri-states the DATA pin when low, while nCS enables the device. Industrial temperature grade (-40°C to +85°C) supports factory-floor and outdoor deployments. Architecturally, the device uses a simple counter-driven serial-read architecture: an internal oscillator clocks a 17-bit address counter that sequentially presents bitstream bytes on the DATA pin. The 10 MHz speed grade (the "-10" suffix) provides ~10 Mbit/s configuration throughput. The -JU suffix designates the 20-lead PLCC J-lead package, the standard surface-mount form for industrial FPGA configuration sockets. Typical applications include industrial FPGA configuration storage on legacy 5V buses, factory automation controllers using Altera-pinout FPGAs, telecommunications line cards, and embedded computing modules. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
AT21CS01-STUM-T - 1Kbit Single-Wire Serial EEPROM | Microchip
The Microchip Technology AT21CS01-STUM-T is a 1-Kbit (128 x 8) single-wire serial EEPROM in a 3-pin SOT-23 surface-mount package. It operates from a parasitic power supply extracted from the SI/O data line across 1.7V to 3.6V, supports 15.4 Kbps Standard-Speed and 125 Kbps High-Speed modes, and offers a factory-programmed 64-bit serial number plus more than one million write cycles per memory location. A serial EEPROM is a non-volatile memory device accessed sequentially over a low-pin-count bus. The AT21CS01 belongs to the single-wire (1-Wire-style) EEPROM category, requiring only SI/O and GND - one signal pin for both data and parasitic power. In the broader hierarchy, it sits under EEPROM -> non-volatile memory -> memory IC -> semiconductor, and is optimized for unpowered attachments such as sensor calibration data storage, ink/toner cartridge identification, and after-market consumables. Key features include an integrated 64-bit unique factory serial number, 8-byte page write or single-byte writes, a Discovery Response feature for quick device detection on the bus, and ultra-high write endurance of >1M cycles per location. The 1.7V to 3.6V supply range makes it directly compatible with 1.8V and 3.3V rails common in modern MCUs. The SOT-23-3 footprint occupies just 2.9 x 1.5 mm of PCB area, ideal for space-constrained cartridges and probe-style attachments. The AT21CS01 uses a parasitic power scheme where the device harvests operating current from the SI/O line through an internal charge pump, eliminating the need for a dedicated VCC pin. Communication follows a master-driven, half-duplex protocol with a Reset/Presence sequence similar to other single-wire devices, simplifying host MCU firmware. Typical applications include analog sensor calibration data storage, ink and toner cartridge identification, medical consumable tracking, cable/accessory authentication, and management of after-market consumables. The unique 64-bit serial number enables anti-counterfeit verification. Designers must provide a pull-up resistor on the SI/O line (typically 2.1 kOhm to 10 kOhm depending on bus capacitance) and an open-drain driver from the host MCU. Standard-speed mode is recommended for long cables or high-capacitance busses. This page synthesizes distributor pricing, parametric same-package alternatives, and practical design notes beyond what the manufacturer datasheet alone provides.
AT21CS01-STUM10-T - 1Kb Single-Wire EEPROM, SOT-23-3 | Microchip
The Microchip Technology AT21CS01-STUM10-T is a 1-Kbit (128 x 8) Single-Wire, I/O-powered serial EEPROM with a unique, factory-programmed 64-bit serial number, housed in a 3-pin SOT-23 (TO-236-3 / SC-59) package. It operates from 1.7V to 3.6V, supports both Standard Speed (15.4 kbps) and High Speed (125 kbps) modes on a single SI/O pin plus GND, and provides greater than one million write cycles per memory location. A single-wire EEPROM is a non-volatile memory device that uses only one signal wire plus ground for both power harvesting and bidirectional data transfer. Within the broader semiconductor hierarchy, an EEPROM is a type of non-volatile memory (NVM), which sits alongside Flash, FRAM, and MRAM. Single-wire variants enable cost-constrained and physically small attachments - such as cartridges, probes, and disposable sensors - that cannot afford the four-wire SPI or two-wire I2C overhead. Key specifications of the AT21CS01-STUM10-T include 1 Kbit of user-accessible EEPROM organized as 128 x 8 bits, a 5 ms maximum self-timed erase/write cycle, low-power operation suitable for I/O-powered (parasitic) harvesting from the host line, a factory-programmed 64-bit unique serial number for traceability, and an industrial temperature range of -40C to +85C. The device also features a security register for optional write-protection of the lower 64 bits. Architecturally, the AT21CS01 uses an I2C-compatible protocol structure transported over a single wire, allowing it to leverage mature I2C framing (start, stop, acknowledge, device address) while physically requiring only one signal pin. This makes it ideal for unpowered attachments where only a two-point mechanical contact is feasible. The on-chip charge pump and EEPROM cell array are optimized for the very low quiescent current typical of passively powered applications. Typical applications include analog sensor calibration data storage, ink and toner printer cartridge identification and authentication, after-market consumable management, medical disposable accessories, electronic labeling, and any cost-sensitive embedded system needing traceable, non-volatile identification memory. The wide operating voltage and single-wire interface make it well suited to battery-less and minimal-pin designs. When designing with the AT21CS01-STUM10-T, remember that the device is powered parasitically from the SI/O line through an internal rectifier; the host must provide an adequate pull-up and supply the EEPROM through the data line, following the timing diagrams in the datasheet. For multi-device buses, each IC has a unique 64-bit serial number, but the STUM10-T variant ships with a fixed I2C address (000), so bus-sharing requires pin assignment discipline. This page synthesizes distributor pricing, true drop-in same-package alternatives, and practical design notes not consolidated in the manufacturer datasheet alone.
AT21CS01-STUM16-T - 1Kb Single-Wire EEPROM, SOT-23-3 | Microchip
The Microchip Technology AT21CS01-STUM16-T is a 1-Kbit (128 x 8) Single-Wire-compatible serial EEPROM with a factory-programmed unique 64-bit serial number, housed in a 3-pin SOT-23 package. Operating from 1.7V to 3.6V supplied entirely through a single I/O pin (SI/O) plus ground, the device uses standard-speed 15.4 kbps and high-speed 125 kbps modes over a single-wire protocol compatible with I2C-style command framing. A 256-bit security register (containing the 64-bit serial number plus 128-bit user-programmable area) plus manufacturer ID and density/revision support allow traceability and authentication for unpowered attachments. Background Knowledge: A Single-Wire EEPROM (also called SEEPROM or UNI/O EEPROM) is a non-volatile serial memory that uses a single bidirectional data line plus ground for both power and communication. In the broader memory taxonomy, single-wire EEPROM belongs to EEPROM -> non-volatile memory (NVM) -> semiconductor memory -> integrated circuit. Its single-pin interface makes it ideal where PCB real estate is at a premium and only two mechanical contacts are practical, such as cable-terminated cartridges or disposable probes. Key features include more than one million write-cycle endurance per memory location, self-timed erase-and-write cycles of 5 ms maximum, low-power CMOS technology drawing only 1 mA active and sub-microamp standby, and a compact 3-pin SOT-23 package. The factory-locked 64-bit serial number is laser-programmed at production and is read-only, providing a globally unique identifier. Optional 128-bit user memory allows field customization. The architecture uses a single-wire command layer that mirrors I2C-style addressing: a START condition, device address byte, ACK, memory address, and data payload terminated by a STOP condition. The internal charge pump generates the 9V to 12V needed to erase and program the floating-gate cells, while the wide 1.7V to 3.6V bus voltage range enables direct connection to 1.8V, 2.5V, 3.0V, and 3.3V host microcontrollers without level shifters. Typical applications include analog sensor calibration data storage, ink and toner printer cartridge identification, after-market consumable authentication, medical disposable accessory tracking, e-meter tamper-detection records, and small-form-factor cable ID tags. The single-wire interface eliminates the need for an extra signal line, allowing two mechanical contact points to deliver both power and bidirectional data. A primary design consideration is that the host must source a 1.7V-3.6V pull-up on SI/O; no separate VCC pin is provided. The 5 ms maximum write cycle means page-mode writes are not supported - each byte write requires its own 5 ms window. Finally, the unique serial number is read using a dedicated security-register command, not through the main memory array. This page synthesizes the Microchip datasheet DS20005857D specifications, distributor pricing tiers, and application context for the AT21CS01-STUM16-T to assist design engineers with single-wire EEPROM selection, drop-in alternatives, and unpowered-attachment system design.
AT24C02D-MAHM-T - 2Kb I2C EEPROM 1MHz 8-UDFN | Microchip
The Microchip Technology AT24C02D-MAHM-T is a 2-Kbit (256 x 8) serial EEPROM with an I2C-compatible 2-wire serial interface, supporting clock frequencies up to 1 MHz and a maximum access time of 4.5 us. The device is housed in an 8-lead UDFN (2 mm x 3 mm) package with an exposed pad, supplied on tape-and-reel packaging for high-volume surface-mount assembly. An EEPROM (Electrically Erasable Programmable Read-Only Memory) is a type of non-volatile memory that retains data without power and supports byte-level erase/write cycles via an electrical charge rather than ultraviolet light. Within the broader memory hierarchy, EEPROM sits between one-time-programmable ROM and higher-density flash memory, offering 1-10 million write/erase cycles per cell and 100+ year data retention. EEPROM devices like the AT24C02D belong to the serial-interface subcategory used for storing configuration parameters, calibration constants, and event logs in space-constrained designs. Key features of the AT24C02D-MAHM-T include a wide supply-voltage range of 1.7 V to 3.6 V, low standby current of 1 uA typical, hardware write protection via a WP pin, and a 16-byte page write buffer for efficient bulk programming. The device supports Standard Mode (100 kHz), Fast Mode (400 kHz), and Fast-Plus Mode (1 MHz) I2C operation. The 8-UDFN package (2 mm x 3 mm) reduces board area by approximately 60% versus 8-SOIC, making it suitable for compact consumer and industrial modules. The AT24C02D uses an advanced CMOS process with internal charge pump circuitry for byte and page write operations, eliminating the need for an external high-voltage programming supply. The I2C slave address is hardwired via the device part suffix, and three address pins (A0-A2) support up to eight devices sharing a single bus for multi-EEPROM systems. The exposed thermal pad on the UDFN-8 package improves mechanical solder joint reliability under thermal cycling. Typical applications include consumer-electronics configuration storage, industrial sensor calibration memory, LCD monitor DDC/EDID storage, smart-card reader parameter retention, and IoT device settings backup. The device is qualified for industrial temperature ranges (-40 C to +85 C), making it suitable for outdoor and harsh-environment systems. When designing with this part, place 0.1 uF decoupling capacitors close to the VCC pin and observe the 5 ms maximum page-write completion time before initiating the next I2C transaction. The WP pin must be grounded for read/write operation or tied to VCC for hardware write locking, depending on application security requirements. This page synthesizes distributor pricing from DigiKey and Mouser, drop-in alternatives within the same UDFN-8 footprint, and practical design notes not consolidated in the manufacturer datasheet.
AT24C02D-SSHM-T - 2Kb I2C EEPROM, 1MHz, 1.7V-5.5V, 8-SOIC | Microchip
The Microchip Technology AT24C02D-SSHM-T is a 2-Kbit (256 x 8-bit) I2C-compatible two-wire serial EEPROM, offered in an 8-SOIC package with industrial-grade operating temperature of -40C to +85C and an extended supply range of 1.7V to 5.5V. What is a serial EEPROM? A serial EEPROM (Electrically Erasable Programmable Read-Only Memory) is a type of non-volatile memory that stores small amounts of configuration or calibration data and communicates over a low-pin-count serial bus. Within the broader memory hierarchy, EEPROM sits between battery-backed SRAM (fast but volatile) and flash (high density but block-erasable); the EEPROM excels at byte-level write endurance, typically one million write cycles per byte. The AT24C02D belongs to Microchip's AT24C series of I2C EEPROMs, which dominate industrial, automotive accessory, and consumer configuration-storage applications. The D-version adds a Schmitt-trigger input stage on the SCL/SDA lines and supports Fast-mode Plus I2C at up to 1 MHz clock frequency with 450 ns access time, while operating from a single 1.7V to 5.5V supply. The 8-bit word address and hard-wired A0/A1/A2 pins allow up to eight devices to share a common two-wire bus. Additional features include hardware write-protect (WP) input, 1 million erase/write cycles endurance, and more than 200-year data retention per the manufacturer datasheet. Architecturally, the AT24C02D integrates a CMOS EEPROM array with an I2C slave controller, on-chip charge pump for high-voltage generation during programming, and a page-write buffer that allows up to 8 bytes to be written per I2C transaction. The Schmitt-trigger inputs eliminate the external RC components that older EEPROM generations required for noise filtering on industrial buses. Typical applications include industrial sensor calibration storage, asset tracking device parameters, consumer appliance user settings, medical device patient-data logs, automotive accessory configuration (infotainment, dash-cam), and IoT node identity/secret storage. The wide 1.7V-5.5V supply range makes it ideal for battery-powered devices operating from a single Li-ion cell. When designing with this part, place a 0.1 uF decoupling capacitor adjacent to VCC and ensure SCL/SDA pull-ups sized for the bus capacitance; pull-ups of 2.2 kohm to 10 kohm are typical at 1 MHz. Observe the write-cycle time (tWR, typically 5 ms) between successive write operations or use the polling ACK method. This page synthesizes distributor pricing, drop-in alternatives, application guidance, and design notes that complement the manufacturer datasheet and enable faster component selection.
AT24C128BMM/TR - 128Kb I2C EEPROM, MSOP-8 | HGSEMI
The HGSEMI AT24C128BMM/TR is a 128-Kbit (16,384 x 8) I2C-compatible serial EEPROM housed in an 8-pin MSOP package, supplied on tape-and-reel for high-volume SMT assembly. The /TR suffix indicates a 3,000-piece reel packaging option, making it suitable for direct integration into automated pick-and-place production lines. Operating from 1.8V to 5.5V, this device provides byte-level and page-level write capability with up to one million erase/write cycles and more than 40 years of data retention. A serial EEPROM (Electrically Erasable Programmable Read-Only Memory) is a non-volatile memory device that communicates over a simple two-wire bus such as I2C. Within the broader memory hierarchy, serial EEPROMs sit alongside flash, EPROM, and FRAM as non-volatile storage, but they are distinguished by byte-level granularity, low pin count, and ultra-low standby current. This makes them ideal for storing configuration parameters, calibration data, and identification records that must persist across power cycles without occupying a parallel memory bus. Key features include a 64-byte page write buffer, hardware write-protect pin, cascadable addressing for up to eight devices on a single I2C bus, and 1 MHz Fast-Mode Plus compatibility on selected grades. The device supports both Standard-Mode (100 kHz) and Fast-Mode (400 kHz) I2C protocols with low standby current consumption. An integrated Schmitt trigger on SCL/SDA inputs allows reliable operation in electrically noisy environments without external filtering. From an architectural standpoint, the AT24C128BMM/TR uses a high-reliability CMOS floating-gate cell array with on-chip charge pump generation. The I2C slave interface includes hardware address decoding for three device addresses (A0, A1, A2) plus a fixed 1010 high nibble, allowing up to 8 devices per bus. Internal ECC and write-cycle timers are managed by an embedded state machine that automatically latches data and asserts a Write-In-Progress flag visible via polling. Typical applications include consumer-electronics configuration storage (TV backlight, audio settings), industrial sensor calibration tables, IoT device identity and security keys, medical instrument parameter storage, and automotive accessory modules. The wide operating voltage range also supports direct connection to lithium battery rails and low-power MCU systems. When designing with this part, place a 100 nF decoupling capacitor within 5 mm of the VCC pin and add 4.7 kohm pull-up resistors on SDA and SCL. The WP pin should be tied to GND for read/write access or to VCC for full hardware protection. Page-write operations must observe the 5 ms internal write cycle to avoid data corruption. This page synthesizes distributor pricing, MSOP-8 drop-in alternatives, and practical bus-design notes not found in the standalone manufacturer datasheet.
AT24C256C-XHL-B - 256Kb I2C EEPROM, 8-TSSOP | Microchip
The Microchip Technology AT24C256C-XHL-B is a 256-Kbit (32,768 x 8) serial EEPROM with an I2C (2-wire) interface, housed in an 8-pin TSSOP package. The device operates from 1.8V to 5.5V supply, supports clock frequencies up to 1 MHz, and delivers byte-write access in 5 ms typical and page-write access up to 64 bytes per page. The I2C slave address is hardware-configurable across three address pins (A0/A1/A2), allowing up to eight devices on a single bus. A serial EEPROM is a type of electrically erasable programmable read-only memory (EEPROM) accessed via a low-pin-count serial bus, optimized for storing small, frequently updated configuration parameters and event logs. Within the system hierarchy, EEPROMs sit below volatile SRAM/DRAM and above one-time-programmable (OTP) memory: they are non-volatile, byte-addressable, and support millions of write cycles. The AT24C256C belongs to the serial EEPROM family -> non-volatile memory -> memory IC -> integrated circuit, and is the most widely deployed footprint for parameter storage in embedded designs. Key features include hardware write-protect (WP) support, 64-byte page write mode, self-timed write cycle, low standby current, and 1 million erase/write cycle endurance with 100-year data retention. The wide 1.8V-5.5V range means a single part can interface directly with 1.8V MCUs, 3.3V SoCs, and 5V legacy logic. The 8-TSSOP connection offers a compact, surface-mountable form factor suitable for space-constrained designs. The device uses an I2C-compatible two-wire interface with SCL and SDA lines, supporting Standard (100 kHz), Fast (400 kHz), and Fast-Plus (1 MHz) modes. Hardware pin-selectable slave addresses (A0/A1/A2) allow up to eight devices to share a common bus, effectively expanding total memory to 2 Mbit without bus contention. An integrated Schmitt-trigger input filter on SDA/SCL improves noise tolerance in industrial environments. Typical applications include storing calibration constants, user preferences, and event logs in industrial controllers, automotive infotainment, consumer electronics, and IoT edge devices. The device is particularly suited for any design requiring reliable, low-power, byte-addressable non-volatile storage with a small footprint. When designing with the AT24C256C, ensure SDA and SCL lines are pulled up to VCC with appropriate resistors (typically 4.7 kohm for 400 kHz, 2.2 kohm for 1 MHz). Add a 100 ns minimum delay between successive writes to allow the internal write cycle to complete; polling ACK or using the device ready function provides reliable synchronization. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical bus-design notes not found in the manufacturer datasheet alone.
AT24C64CN-SH-B - 64Kb I2C EEPROM, 1.8-5.5V, 8-SOIC | Microchip
The Microchip AT24C64CN-SH-B is a 64-Kbit (8 K × 8) I²C-compatible serial EEPROM organized as 8,192 bytes, supplied in an 8-pin SOIC (0.154" / 3.90 mm) package and specified for 1.8V to 5.5V single-supply operation with up to 1 MHz Fast-Plus I²C clock support and 550 ns access time. It delivers non-volatile storage with 1,000,000 erase/write cycles endurance and >40-year data retention, suitable for system configuration, calibration tables, and event-log buffers across industrial and consumer designs. Background: A serial-EPR line is a non-volatile memory that stores small amounts of data persistently and is electrically erasable EEPROM (Electrically Erasable Programmable Read-Only Memory). As a category, serial EEPROMs belong to non-volatile memory (NVM) -> memory IC -> semiconductor IC, and sit alongside Flash and battery-backed SRAM in the storage hierarchy. Unlike parallel EEPROMs, serial parts trade bus width for pin count, using 2-wire protocols (I²C, SPI, Microwire) so a tiny 8-pin package can hold 64 Kbit. The AT24C family targets low-density configuration, user settings, black-box logs and trim/calibration storage where byte-level write endurance exceeds what Flash offers. Key features include hardware-compatibility software support for standard, fast (400 kHz) and fast-plus (1 MHz) I²C modes, software-programmable device addresses (A0/A1/A2 pins allowing up to eight devices on a single bus), 32-byte page write buffer for efficient multi-byte writes, hardware write-protect pin, and self-timed write cycle. The 8-SOIC (3.90 mm body width) provides industrial throughput over the standard SO-8 footprint and eases hand-soldering, hand-rework and breadboarding. Operating temperature spans -40°C to +85°C for the CN-series consumer/industrial grade. Technical depth: Internally the AT24C64CN uses a CMOS floating-gate cell array with on-chip charge pump for high-voltage generation, an I²C slave state machine with SCL/SDA glitch suppression, and a 32-byte page-latch between the I²C bus and the EEPROM array. The device supports sequential read for the entire 8 KB and uses acknowledge polling (ACK to verify) to detect write completion without busy-pin monitoring. JEDEC JESD22 standard testing applies to moisture sensitivity and thermal-shock reliability of the SOIC package. Typical applications include storing user preferences in LCD/TV monitors, EMS (energy-management system) calibration constants in smart thermostats, IC firmware-language configuration in industrial controller settings, logging sensor-tag IDs in meter readers, and storing system frequency-locking tables in car infotainment modules. Each application benefits from the 1 MHz bus speed (fast firmware load), 32-byte page write (fast bulk update), and 1M-cycle endurance (long in-field life). Design consideration: When migrating designs that previously used AT24C32/AT24C256 parts, identify the common I²C protocol: write-protocol compatibility for easy drop-in. Verify A0/A1/A2 address-pin strapping to avoid bus collisions, and add pull-up resistors (typically 2.2 kΩ to 10 kΩ depending on bus capacitance) on SDA and SCL for reliable operation above 400 kHz.
AT24CSW020-UUM0B-T - 2Kb I2C Serial EEPROM with Security | Microchip
The Microchip AT24CSW020-UUM0B-T is a 2 Kbit (256 x 8) I2C-compatible two-wire serial EEPROM in a 4-ball WLCSP package, operating from 1.7 V to 3.6 V with a maximum clock frequency of 1 MHz and a 450 ns access time. It integrates a factory-pre-programmed 32-bit unique serial number and a separate security register that allows user-defined write-protected storage, alongside software write protection (SWP) and a hardware WP pin for advanced data integrity. What is an EEPROM? An EEPROM (Electrically Erasable Programmable Read-Only Memory) is a non-volatile memory device that retains stored data when power is removed and supports byte-level in-system erase and rewrite via an electrical interface, distinguishing it from one-time-programmable ROM and from flash memory which erases in larger blocks. EEPROMs typically connect via serial protocols such as I2C or SPI to keep pin count low, making them ideal for storing configuration parameters, calibration coefficients, and device identity in space-constrained designs. Within the broader taxonomy, the AT24CSW020 belongs to the serial EEPROM class -> non-volatile memory -> memory IC -> semiconductor device. Key features include low-power CMOS technology, built-in power-on reset (POR) to suppress bus glitches, noise-suppression filters on the I2C inputs, and hardware/software write protection. The pre-programmed serial number is factory-locked and immutable, while a user-programmable security register (16 x 8 in the 2 Kb device) can store OEM-specific data behind SWP. The device supports byte-write and 16-byte page-write modes with automatic erase-before-write. Internally, the AT24CSW020 uses a proprietary CMOS floating-gate cell array paired with an I2C slave state machine, a charge-pump row/column decoder, and a 32-bit ROM that holds the unique serial number. The 1 MHz Fast-Mode Plus-compatible interface uses 100 kHz Standard-Mode and 400 kHz Fast-Mode timing as legacy tiers, with a 450 ns access time measured from the SCL falling edge. Typical applications include storing Wi-Fi/BLE pairing credentials in IoT modules, factory calibration coefficients in sensor boards, asset tracking with the unique serial number, accessory authentication in consumer electronics, and small-parameter storage in wearable devices. The WLCSP-4 package enables direct attachment on the back of a PCB or in ultra-small modules where a standard SOIC footprint is impossible. When designing with this device, follow Microchip's PCB layout guidance: place decoupling capacitors close to the VCC ball, route SDA/SCL traces with matched impedance to the controller, and add external pull-up resistors sized to meet the I2C sink-current limit at 1 MHz. Pull-ups of 1 kohm to 4.7 kohm are typical at 3.3 V for Fast-Mode Plus operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
AT25320B-SSHL-T - 32Kbit SPI EEPROM, 20MHz, 8-SOIC | Microchip
The Microchip AT25320B-SSHL-T is a 32 Kbit (4,096 x 8-bit) serial EEPROM with an SPI-compatible bus, operating at up to 20 MHz clock frequency in an 8-lead SOIC (SO-8, 0.150 inch) package. According to the manufacturer datasheet, the device operates from 2.5V to 5.5V, supports SPI Modes 0 (0,0) and 3 (1,1), and provides 32-byte page write mode along with block write protection for the upper 1/4, upper 1/2, or full array. The -SSHL-T suffix denotes the 8-SOIC, tape-and-reel packaging variant. A serial EEPROM (Electrically Erasable Programmable Read-Only Memory) is a type of non-volatile memory that retains data without power and is accessed serially through a small pin count. SPI EEPROMs belong to the broader hierarchy of memory ICs -> non-volatile memory (NVM) -> EEPROM -> serial EEPROM -> SPI EEPROM, and are widely used as configuration, calibration, user-data, and black-box storage on PCBs where small density, low pin count, and byte-level write granularity are required. Key features include: 32 Kbit density (4096 x 8), 20 MHz maximum SPI clock rate at 5V, byte and 32-byte page write modes, hardware/software write protection via /WP and /HOLD pins, and 1,000,000 erase/write cycles endurance typical with >100 year data retention. The device supports status register read and a sequential read mode that allows the entire array to be read with a single read command. Internally, the AT25320B uses a CMOS floating-gate EEPROM cell with on-chip charge pump for high-voltage generation during programming. The SPI slave interface uses dedicated pins CS#, SCK, SI (MOSI), and SO (MISO), with /WP and /HOLD providing additional bus-sharing flexibility. The architecture is optimized for low-power operation, drawing microamp-level standby currents. Typical applications include consumer electronics parameter storage, industrial sensor calibration, medical device patient-data logging, automotive infotainment HMI settings, IoT device configuration, and any embedded system needing persistent small-data storage with low power and low pin count. The wide 2.5V-5.5V range lets it share a bus with both 3.3V MCUs and 5V legacy logic. When designing with this part, place a 0.1uF decoupling capacitor close to VCC, keep CS# low during any SPI transaction, and observe the write cycle time (typically 5 ms) before polling the status register for completion. Always tie unused /WP and /HOLD to VCC for normal operation. This page synthesizes distributor pricing, drop-in SPI EEPROM alternatives in the same 8-SOIC footprint, and practical hardware design notes not found in the standalone manufacturer datasheet.
AT25640B-MAHL-T - 64Kb SPI EEPROM, 20MHz, 8-UDFN | Microchip
The Microchip AT25640B-MAHL-T is a 64 Kbit (8192 x 8-bit) serial EEPROM that uses the industry-standard Serial Peripheral Interface (SPI) bus, housed in an 8-pin UDFN (2x3 mm) package with an exposed thermal pad. It supports SPI modes 0 and 3, operates from 1.8 V to 5.5 V, and delivers a maximum clock rate of 20 MHz at 5 V, with a 32-byte page write buffer. According to the Microchip/Atmel datasheet, the device features a hardware/software write-protect pin, block write protection for the upper quarter of memory, and more than 1 million erase/write cycles per page with 100-year data retention. A serial EEPROM (Electrically Erasable Programmable Read-Only Memory) is a type of non-volatile memory that retains data when power is removed and supports bit-level or byte-level electrical rewrites. In the system hierarchy, it sits under non-volatile memory -> memory IC -> integrated circuit -> semiconductor. SPI EEPROMs like the AT25640B-MAHL-T are preferred over parallel EEPROMs and I2C EEPROMs when designers need higher throughput (up to 20 MHz vs 1 MHz I2C), simpler firmware (no address-byte muxing), and lower pin count than parallel NV memory. Key differentiating features include a 64 Kbit density in a small 8-UDFN footprint, low standby current of 1 µA typical (2 µA maximum at 5.5 V), fast page-write latency of ≤5 ms, and full SPI mode 0 (CPOL=0, CPHA=0) and mode 3 (CPOL=1, CPHA=1) compatibility. The -MAHL-T suffix denotes the UDFN (MA) package, tape-and-reel (T), with hardware write-protect (H) and 1.8 V minimum Vcc (L). The AT25640B uses a split-gate cell design with on-chip high-voltage charge pumps and a self-timed write cycle, achieving reliable operation across industrial temperature ranges (-40 °C to +85 °C). Its 8-UDFN package with exposed pad provides a low thermal resistance path and excellent mechanical reliability for consumer, industrial, and automotive-aftermarket assemblies. Typical applications include configuration parameter storage in industrial controllers, user-setting retention in white goods, calibration tables in medical and test instruments, and asset tracking/BOM storage in IoT nodes. The wide voltage range (1.8 V to 5.5 V) makes it ideal for battery-powered and energy-harvesting designs. When designing with the AT25640B-MAHL-T, place a 0.1 µF decoupling capacitor as close as possible to VCC and tie CS high through a pull-up resistor when not in use to prevent spurious writes. For new layouts, prefer the UDFN package over the SOIC/TSSOP variants for the smallest PCB footprint. This page synthesizes distributor pricing, same-package drop-in alternatives, and practical SPI EEPROM design notes that are not consolidated on the manufacturer datasheet, enabling faster component selection and PCB redesign.
AT25640B-SSHL-T - 64Kb SPI EEPROM, 8-SOIC, 20 MHz | Microchip
The Microchip Technology AT25640B-SSHL-T is a 64-Kbit (8,192 x 8) Serial EEPROM that uses the industry-standard Serial Peripheral Interface (SPI) bus. The device operates from 1.8V to 5.5V, supports clock frequencies up to 20 MHz, and is offered in an 8-pin narrow-body SOIC (SOIC-8) package supplied on tape and reel. According to Microchip's product page, the AT25640B is optimized for use in consumer electronics, industrial, and automotive applications that require reliable non-volatile data storage. A Serial EEPROM is a non-volatile memory that retains data without power, accessed serially through a small pin count. It belongs to the broader hierarchy: EEPROM -> non-volatile memory (NVM) -> memory IC -> semiconductor. Compared with Flash memory, EEPROM offers byte-level erase/write granularity and superior write endurance for parameter storage, while compared with parallel EEPROMs it reduces pin count dramatically. SPI EEPROMs in particular are favored for their low pin count, ease of microcontroller integration, and high clock rates that shorten page-program times. Key features of the AT25640B-SSHL-T include 32-byte page-write mode, hardware and software write-protect options, SPI Modes 0 and 3 support, low standby current of typically 5 µA at 5V, and over 1 million erase/write cycles per page with 100 years of data retention. The device uses a self-timed internal write cycle and provides a WP pin for block-level protection plus a HOLD pin for suspending serial communication without deselecting the chip. Internally the AT25640B uses Microchip's proprietary CMOS floating-gate process technology that combines high-density storage cells with on-chip charge pumps, eliminating the need for an external high-voltage VPP supply. The Schmitt-trigger inputs and CMOS outputs make the part tolerant of slow or noisy SPI edges, and the wide 1.8V-5.5V supply range lets the same chip serve 1.8V MCU rails and legacy 5V industrial buses without level shifters. Typical applications include automotive infotainment and body-electronics parameter storage, industrial sensor calibration data, consumer appliance user settings, smart-meter measurement logs, and IoT device configuration storage. The AEC-Q100 qualification of the broader AT25640B family makes it suitable for under-hood and dashboard automotive designs. When designing with this part, place a 100 nF decoupling capacitor within 5 mm of the VCC pin and route the SCK trace as a short, impedance-controlled line to avoid ringing above VCC or below ground. Because the SOIC-8 package dissipates very little power, no heatsink or thermal copper pour is required - it can be placed near other ICs without thermal concerns. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
AT25DF081A-SH-B - 8Mbit SPI NOR Flash 100MHz | Renesas
The Renesas AT25DF081A-SH-B is a serial NOR Flash memory device with 8 Mbit (1 Mbyte) density, configured as 4K x 256 bytes, supporting standard SPI and dual-SPI operation at up to 100 MHz clock frequency in an 8-pin SOIC-W (208 mil) package. The part operates from a single 2.7 V to 3.6 V supply, is rated for -40C to +85C industrial temperature range, and is supplied in tube packaging for the SH-B suffix variant. A NOR Flash is a non-volatile memory that executes code in-place (XIP) with random byte-level read access and long-term data retention, sitting in the memory hierarchy between EPROM/EEPROM and NAND Flash. Compared with NAND Flash, NOR provides faster random reads and higher reliability for code storage, while compared with serial EEPROM it offers vastly higher density at lower cost per bit, making it ideal for boot images, firmware, and configuration data in embedded systems. Key features of the AT25DF081A-SH-B include a flexible uniform erase architecture (4-Kbyte block, 32-Kbyte and 64-Kbyte blocks), three Security Register pages for unique device identification, JEDEC-standard SFDP (Serial Flash Discoverable Parameters) read support, and configurable write protection. The device supports page program of up to 256 bytes and offers typical endurance of 100,000 erase/program cycles per sector with >20-year data retention. It is designed for 3 V systems in which program code is shadowed from Flash into embedded or external RAM for execution. The architecture combines a SPI/dual-SPI serial interface with hardware-controlled block protection (BP0-BP2) and a 256-byte page programming buffer. Status and configuration registers are accessible via dedicated read/write instructions, and a hold pin and write-protect pin allow shared-bus operation. The part uses industry-standard command set compatible with other Adesto/Atmel/Renesas SPI NOR Flash families for software portability. Typical applications include IoT endpoint firmware storage, industrial sensor data logging, networking equipment boot Flash, automotive infotainment auxiliary storage, consumer device configuration memory, and medical instrument firmware. The wide -40C to +85C range and small 8-SOIC footprint also suit space-constrained outdoor and industrial deployments where reliability over temperature matters. When designing with this device, ensure that CS, SCK, SI, SO, WP, and HOLD are routed with matched trace lengths and a 10k pull-up on CS to prevent spurious selection. Add a 0.1 uF decoupling capacitor close to VCC and observe tVCS minimum of 50 ns before the first clock edge after CS falls. This page synthesizes distributor pricing, drop-in alternatives in the same 8-SOIC package, and practical SPI bus design notes not found in the manufacturer datasheet alone.
AT25DF641A-SH-B - 64Mbit SPI Flash, 2.7-3.6V, 100MHz SOIC-8 | Renesas
The Renesas (formerly Adesto/Atmel) AT25DF641A-SH-B is a 64-Mbit (8M x 8) serial-interface NOR Flash memory device in an 8-pin SOIC-W (208 mil) package, operating from a single 2.7V to 3.6V supply with 100 MHz SPI clock support. It supports SPI Modes 0 and 3 plus Dual-I/O for high-throughput read operations, and is offered in tube packaging as the -SH-B ordering code. A serial NOR Flash is a non-volatile memory that connects to a host microcontroller via a low-pin-count serial peripheral interface (SPI). Within the memory hierarchy, a NOR Flash sits above external SRAM/DRAM and below the MCU's internal flash: program code is shadowed from the array into embedded or external RAM for execution, while data logging and configuration records persist across power cycles. Serial NOR Flash (Flash -> NOR Flash -> non-volatile memory -> semiconductor) is preferred over parallel NOR for cost- and pin-constrained designs because it requires only 4 to 6 signal lines instead of 16 to 32. Key features include 64-Mbit density organized as 8 MB, 256-byte page programming granularity, 4-KB sector and 32-KB and 64-KB block erase options, hardware/software/absolute write protection, and a 100 MHz maximum SPI clock with Single and Dual I/O read modes. The device operates across -40 C to +85 C and is qualified for high-volume consumer and industrial applications requiring reliable code shadowing and data logging. Architecturally, the AT25DF641A implements the standard Adesto/Atmel 25-series command set (0x9F JEDEC ID, 0x03 read, 0x0B fast read, 0x3B dual-output read, 0x02 page program, 0x20/0x52/0xD8 sector/block erase), which enables drop-in compatibility with Macronix MX25L6406E, Winbond W25Q64, and similar 64-Mbit SPI NOR parts. The 256-byte page Erase feature supports efficient, low-energy data logging by allowing small chunks to be rewritten without erasing a full 4 KB sector first. Typical applications include set-top box boot ROM, IoT edge node firmware storage, smart-home hub configuration and OTA staging, industrial sensor data loggers, automotive infotainment non-volatile storage, and consumer electronics such as printers and home appliances that need reliable code shadowing into host RAM. Designers should note that the -SH-B suffix denotes 8-SOIC (Wide Body, 208 mil) in tube packaging; the -SH-T variant uses tape-and-reel for high-volume SMT assembly. Designers must observe VCC ramp timing, hold the CS# pin low only during active transfers, and add a 100 nF decoupling capacitor adjacent to the VCC pin for stable read/program/erase operation. This page synthesizes distributor pricing, drop-in compatible alternatives, and practical design notes not found in the standalone manufacturer datasheet, with full v3.9 STRICT DROP-IN-ONLY alternatives ranked same-brand first then cross-brand.
AT25DF641A-SH-T - 64Mbit SPI/Quad SPI NOR Flash, SOIC-8 | Renesas
The Renesas (formerly Adesto/Dialog) AT25DF641A-SH-T is a 64-Mbit (8 MB) serial-interface NOR Flash memory with SPI/Quad-SPI and Dual-I/O support, supplied in an 8-pin SOIC (SOIC-W 208 mil, "SH") package and shipped in Tape & Reel form. Operating from a single 2.7 V to 3.6 V supply, it integrates 256-byte page erase and uniform 4 KB / 32 KB / 64 KB sector erase to balance low-energy data logging with fast boot shadowing. Maximum SPI clock is 100 MHz in standard Single-I/O mode, with Dual-I/O read throughput extended via the SO/SI Dual-Input Program and Dual-Output Read modes. A NOR flash memory is a non-volatile storage technology in which the cells are wired in parallel (unlike NAND), giving byte-level random read access at the cost of larger cell area. Within the memory hierarchy, this places NOR above NAND in read granularity and below DRAM/SRAM in write speed. "Serial" NOR further packages that array behind a low-pin-count SPI interface, replacing legacy parallel-NOR footprints on modern boards; families with "Quad SPI" extend the 4-wire bus to 4 data lines for higher read bandwidth at the same clock. Key features of the AT25DF641A include 64 Mbit density (8 MB), 100 MHz single-I/O SPI clock, Dual-I/O (DIO) read/program, deep power-down mode below 5 µA typical, 4 KB sector erase granularity, JEDEC manufacturer/device-ID read, and a write-protect pin for hardware security. The SOIC-8 (208 mil, "SH") body is the de-facto industry pinout for SPI flash, dropping directly onto 8-SOIC land patterns rated for hand or reflow soldering. Internally the device uses a sector-erase architecture with 256-byte page program granularity. A typical application pairs the AT25DF641A as a boot/code-shadow store: the host MCU copies a small bootloader from flash into internal SRAM at reset, then DMA-streams the larger application image from the same flash to external SDRAM for XIP-free execution. The same part also serves as a low-power data-logging sink, where 256-byte page writes minimize per-byte energy. Typical applications include IoT firmware storage, smart-home hub boot devices, consumer-electronics config/asset logging, industrial HMI code storage, automotive infotainment boot (where AEC-Q100 sister parts such as AT25QF641B are used), and Wi-Fi/BLE module co-storage with the radio SoC. Choose the AT25DF641A-SH-T over SPI NAND when byte-level read access is required (e.g. execute-in-place via QSPI on a Cortex-M4); choose SPI NAND when cost-per-bit dominates. When laying out the PCB, place a 0.1 µF decoupling capacitor within 5 mm of VCC and keep the SCK trace short and length-matched to the host. Respect tVSL (VCC-min to chip-access) of typically 30 ms after power-up before issuing the first command, and assert /WP or /HOLD only while SCK is low to avoid false framing. This page synthesizes distributor pricing, same-package drop-in alternatives including the AT25QF641B-SHB-T Quad-SPI successor, and practical design notes not consolidated in any single manufacturer document.
AT25SF041B-SSHD-B - 4Mbit SPI/Quad-I/O Flash, 108MHz, 8-SOIC | Renesas
The Renesas AT25SF041B-SSHD-B is a 4 Mbit (512 Kbit x 8) serial NOR Flash memory with SPI, Dual-I/O, and Quad-I/O interfaces, operating up to 108 MHz clock frequency in an 8-pin SOIC (0.154", 3.90 mm width) package. A serial NOR Flash is a type of non-volatile memory that uses a low pin-count synchronous serial protocol (SPI) instead of a parallel address/data bus. It belongs to the hierarchy NOR Flash -> Flash memory -> non-volatile memory -> semiconductor memory IC. The SPI interface reduces PCB routing, package size, and power consumption versus parallel NOR, while providing fast random-read access for code-storage and data-logging roles. The "B" silicon revision of the AT25SF family reduces the minimum operating voltage to 2.5V (down from 2.7V on the legacy AT25SF041) and adds Execute-in-Place (XiP) support for direct code execution from flash. Key features include 4 Mbit density (512 KB user space), single/dual/quad SPI modes, 108 MHz maximum clock in Quad-I/O mode, page program up to 256 bytes, sector erase 4 KB and block erase 32 KB / 64 KB, >100 K endurance cycles per sector, >20 year data retention, and a deep power-down current of typically <1 µA. The device supports JEDEC-standard 0x9D, 0x44, 0x5D manufacturer/device IDs for software compatibility. Internally, the AT25SF041B uses a NOR cell array with a serial command state machine, on-chip page buffer, and status register. The 2.5V–3.6V single supply simplifies integration with 3.3V systems, while built-in ECC and write-protect logic safeguard against accidental modification. SPI modes 0 and 3 are supported, making the part interoperable with virtually any MCU or SoC SPI master. Typical applications include firmware storage for IoT nodes, boot flash for microcontrollers, data logging for industrial sensors, configuration parameter storage in home appliances, and display drivers in HMI panels. Designers choose the AT25SF041B-SSHD-B when they need reliable 4 Mbit code/data storage in a standard 8-SOIC footprint compatible with millions of off-the-shelf reference designs. When designing with this part, place a 100 nF decoupling capacitor within 3 mm of the VCC pin and route SCK/MOSI/MISO away from switching nodes. The HOLD and WP pins should be tied high (inactive) for Quad-I/O mode, and CS must be pulled high during power-up to prevent spurious writes. This page synthesizes distributor stock levels, drop-in alternatives from the same AT25SF family and competitor 4-Mbit SPI NOR devices, and practical design notes not found in the standalone manufacturer datasheet.
AT25SF2561C-SXUB-T - 256Mbit SPI NOR Flash | Renesas
The Renesas AT25SF2561C-SXUB-T is a 256 Mbit (32 MB) serial NOR flash memory with SPI, Dual-SPI, Quad-SPI, QPI, and DTR (double transfer rate) interfaces, clocked up to 133 MHz in a 16-pin SOIC 300 mil package supplied on tape and reel. The wide-bus modes (Quad SPI and QPI) deliver up to 5x faster throughput than legacy single-I/O SPI, enabling fast code-XIP and high-bandwidth data logging, while a 2.7 V to 3.6 V single supply simplifies integration on 3.3 V rails common in MCUs and SoCs. What is a serial NOR flash? A NOR flash is a non-volatile memory that retains data without power and supports random-access reads (execute-in-place / XIP), making it ideal for code storage and boot media. "Serial" means the device exposes a low pin-count SPI bus instead of a wide parallel interface. The category hierarchy is: NOR flash -> flash memory -> non-volatile memory -> semiconductor memory. Drop-in compatible SPI NOR flashes share pinout, command set, and timing, allowing them to be interchanged across footprints or as second-source supply. Key specifications: 256 Mbit density (32 MB user addressable); 2.7-3.6 V single supply; -40 °C to +85 °C industrial operating range; 133 MHz maximum SPI clock with DTR support; 4 KB sector, 32 KB and 64 KB block erase granularities; >100k endurance cycles per sector and >20-year data retention; uniform 4 KB sector architecture with built-in erase/program suspend/resume. Technical depth: the device uses a NOR array cell with a high-speed SPI controller implementing JEDEC JESD216 (serial flash discoverable parameters) plus extended Renesas SFDP registers, allowing automatic identification by modern boot ROMs. Multiple security features include a 256-bit OTP security register, individual block protection bits, and a hardware write-protect pin, satisfying secure-boot requirements. Deep power-down current is in the single-digit microamp range for battery-backed designs. Typical applications include IoT firmware and bootloader storage, industrial HMI and PLC parameter logging, automotive infotainment secondary boot (with Q-1 grade variants for AEC-Q100), consumer set-top boxes, and wireless modules where Quad-SPI XIP loads MCU code directly from flash. Designers can also use it as a redundant parameter store alongside an internal MCU EEPROM emulation area. Design consideration: keep the SPI traces short and length-matched when using Dual/Quad modes to avoid setup/hold violations, and place a 100 nF decoupling capacitor within 5 mm of the VCC pin. Note that the SXUB package is 16-SOIC 300 mil, while the smaller-footprint SUB package uses 8-SOIC; they are NOT pin-compatible drop-in replacements. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes beyond the manufacturer datasheet, helping engineers shorten the sourcing and second-source risk-evaluation cycle.
AT27C010-70PU - 1Mb (128Kx8) OTP EPROM, 70ns, 32-PDIP | Microchip
The Microchip AT27C010-70PU is a low-power, high-performance 1,048,576-bit one-time programmable read-only memory (OTP EPROM) organized as 128K by 8 bits, with a 70 ns access time and packaged in a 32-pin PDIP (0.600 in). It operates from a single 5 V supply in normal read mode and consumes only 100 uA typical standby current, making it suitable for both battery-powered and line-powered legacy designs. An EPROM (erasable programmable read-only memory) is a non-volatile memory technology that stores bits via trapped charge on a floating-gate transistor. The OTP variant cannot be erased by UV light after wafer-level programming and is intended for low-to-mid volume production where the cost of windowed ceramic EPROMs is not justified. In the system hierarchy, EPROM sits between mask ROM and EEPROM/Flash: cheaper than Flash per bit, faster than Flash for byte-level random reads, and one-time-programmable like mask ROM but without the mask tooling charge. Key features include a 70 ns access time that eliminates the need for WAIT states on most 8-bit and 16-bit microcontrollers of its era, low-power CMOS operation with 100 uA standby and 25 mA active supply current, TTL-compatible inputs and outputs, and JEDEC-approved byte-wide pinout. Any byte can be read in less than 45 ns per the family specification, and the device supports rapid programming algorithms verified by the manufacturer. Typical applications include firmware storage in 8051, Z80, and 68HC11 embedded systems, BIOS and boot ROM sockets in industrial PCs and gaming consoles, retro-computing restorations of CP/M and arcade boards, and lookup-table or character-generator ROMs. The PDIP-32 footprint is compatible with industry-standard 27C010 sockets including UV-erasable variants, allowing field programming via a separate programmer and socketed replacement. When designing with the AT27C010-70PU, ensure VPP (pin 1) is held at 0 V in read mode and routed through a dedicated programming supply only during device programming. Add a 0.1 uF decoupling capacitor close to VCC (pin 32) and a bulk 1 uF tantalum cap on the supply rail, and use a 74HC245 or similar bus driver when more than one memory device shares a common 8-bit bus to prevent contention during bus arbitration. This page synthesizes distributor pricing from DigiKey, Mouser, Octopart and LCSC, real drop-in alternatives from Microchip and AMD/Amtel cross-reference data, and practical design notes not consolidated in the manufacturer datasheet, giving engineers an information-density advantage when sourcing legacy parallel EPROMs.
AT28C010-12JC - 1Mb Parallel EEPROM 120ns | Microchip | 32-PLCC
The Microchip Technology AT28C010-12JC is a 1-Mbit (128K x 8) parallel Electrically Erasable Programmable Read-Only Memory (EEPROM) housed in a 32-pin PLCC (Plastic Leaded Chip Carrier) package with 120 ns maximum access time. It operates from a single 5V supply and consumes 220 mW active / 0.35 mW CMOS standby, making it well suited for embedded systems, legacy industrial controllers, and military-grade storage subsystems requiring reliable non-volatile byte-write memory. A parallel EEPROM is a non-volatile memory class that allows byte- or page-level electrical erase and rewrite while preserving the fast random-access read characteristics of static RAM. Within the broader semiconductor hierarchy, the AT28C010-12JC sits as: EEPROM -> non-volatile memory (NVM) -> memory IC -> integrated circuit -> semiconductor. EEPROMs fill the niche between mask ROM (one-time programmable, lowest cost) and battery-backed SRAM (byte-write, but volatile on power loss), offering unlimited endurance cycles with no battery requirement at the cost of higher per-bit price. Key features include an internal 128-byte page register that enables simultaneous writing of up to 128 bytes with a 10 ms page-write cycle, automatic erase-before-write using on-chip latches, and built-in Data Protection (the AT28C010 requires an active-high +5V WR pulse, eliminating accidental write conditions). The device is available in commercial (0C to +70C) and industrial (-40C to +85C) temperature ranges, with military (-55C to +125C) screening on selected variants. The architecture uses a paged CMOS cell array with on-chip address and data latches driven by standard JEDEC-equivalent microprocessor bus timing; OE, CE, and WE control signals deliver SRAM-like interface simplicity. Power dissipation falls to 0.35 mW in CMOS standby, an order of magnitude below TTL-active standby, extending battery-backed retention profiles for systems that idle between writes. Typical applications include firmware program storage in legacy 8-bit MCU subsystems (8051, 68HC11), configuration parameter retention in industrial PLCs, VXI/PXI instrument calibration tables, point-of-sale (POS) terminal transaction logging, and military/aerospace equipment requiring MIL-STD-883 screening. Its wide operating temperature and paged-write architecture also suit avionics data recorders and ruggedized field instrumentation. Designers should treat PLCC pin 1 orientation carefully and observe strict Vcc decoupling near the package to avoid write-disturbance. The 32-PLCC footprint is JEDEC-standard; legacy PCBs designed around the 32-pin DIP AT28C010 can be migrated by adding a low-profile PLCC socket without any PCB rework. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
AT28C040-20BC - 4Mbit Parallel EEPROM 200ns 32-CDIP | Microchip
The Microchip Technology AT28C040-20BC is a 4-Mbit (512K x 8) parallel EEPROM memory IC delivering 200 ns access time in a 32-pin ceramic DIP (0.600 inch, 15.24 mm) windowed package, designed for non-volatile storage in legacy industrial, telecom, and embedded systems. A parallel EEPROM is a non-volatile memory device that retains data without power and is accessed via a parallel data bus (8 bits per cycle in this case). Within the broader memory taxonomy, the AT28C040 sits as a byte-alterable EEPROM, a category below flash memory in write granularity but offering superior endurance for byte-level updates and a write-cycle model that behaves like static RAM without external components. It is part of the AT28C parallel EEPROM family, predecessors of modern serial flash in most new designs but still preferred where in-system reprogrammability, byte-write flexibility, and parallel throughput are required. Key specifications include 4 Mbit density organized as 524,288 words x 8 bits, 200 ns access time, 256-byte page register for page-mode writes, 10 ms write cycle time per byte or page, 4.5 V to 5.5 V single-supply operation, and 440 mW maximum active power dissipation. The device supports read, byte-write, and page-write modes, with internal latch and software data protection mechanisms to prevent inadvertent writes. Technically, the AT28C040 employs a CMOS EEPROM cell array with on-chip high-voltage generation for the Fowler-Nordheim tunneling write process. The integrated 256-byte page register allows up to 256 bytes to be loaded and then written simultaneously, substantially accelerating bulk programming relative to byte-write EEPROMs. The -20 speed grade denotes the 200 ns access time bin, and the BC suffix identifies the 32-pin side-brazed ceramic DIP package with a transparent quartz window for in-circuit UV erasure. Typical applications include legacy industrial controllers, telecom equipment firmware storage, point-of-sale terminals, avionics instrumentation data logging, and embedded boot/program memory where parallel bus interface simplifies host integration. When designing with this part, derate access time for capacitive bus loading and place 0.1 uF decoupling capacitors near the VCC pins. The UV-erasable window allows factory re-programming, but in-system byte-writes do not require erasure. Use the JEDEC-standard 32-CDIP footprint to ensure compatibility with legacy sockets and PCBs. This page synthesizes distributor stock, parametric specifications, drop-in alternative candidates, and practical design notes beyond the datasheet itself, enabling engineers to evaluate, source, and integrate the AT28C040-20BC with confidence.
AT28C17-15PC - 16Kbit Parallel EEPROM, 150 ns, 28-PDIP | Microchip
The Microchip AT28C17-15PC is a 16 Kbit parallel Electrically Erasable and Programmable Read-Only Memory (EEPROM) organized as 2,048 words by 8 bits, packaged in a 28-pin PDIP through-hole plastic DIP. The -15 speed grade denotes a 150 ns maximum read access time and operates on a single 4.5 V to 5.5 V supply compatible with standard TTL logic levels. What is a parallel EEPROM? A parallel EEPROM is a non-volatile memory device that provides byte-wide data access (typically 8 bits per read/write cycle) over a parallel bus, as opposed to serial EEPROMs (I2C/SPI/Microwire) that move data one bit at a time. Parallel EEPROMs sit in the system hierarchy as: parallel EEPROM -> non-volatile memory (NVM) -> memory IC -> integrated circuit -> semiconductor. They were widely adopted in 8-bit and 16-bit microprocessor systems before flash memory densities made serial interfaces practical for all but the smallest data sets. Key features include fast read access (150 ns), self-timed byte write cycle of 1 ms typical, internal address and data latches, an internal control timer, automatic clear-before-write, direct microprocessor control, DATA POLLING, and a READY/BUSY handshake output. The device is manufactured on Atmel's reliable nonvolatile CMOS process and supports byte-write operations without external erase cycles, simplifying firmware routines on legacy MCU platforms. From an architectural standpoint, the AT28C17 integrates charge-pump-based high-voltage generation on-chip for the floating-gate cells, eliminating the need for an external VPP programming supply. An internal control timer sequences the write cycle automatically, freeing the host CPU to perform other tasks. WRITE PROTECT (pin WP) hard-disables writes to the upper half of the array, and DATA POLLING on I/O7 lets software detect end-of-write without continuous polling of the BUSY signal. Typical applications include microcontroller-based configuration parameter storage, industrial control firmware scratchpad, point-of-sale terminal non-volatile data logs, legacy 8085/Z80/8051 system memory expansion, and instrumentation calibration tables. The 28-PDIP through-hole package makes the part especially useful for prototype boards, repair replacements for vintage equipment, and educational lab environments where socketed parts are preferred. When designing with this device, observe the 4.5 V minimum supply for reliable byte-write operation and provide proper decoupling (typically 0.1 uF) close to VCC. The READY/BUSY open-drain output requires a pull-up resistor to VCC if used with a wired-OR connection to interrupt logic or other status lines. This page synthesizes distributor pricing, parallel-EEPROM drop-in alternatives (AT28C16 family, M28C16, X28C16), and practical design notes not found in a single place on the manufacturer datasheet.
AT28C64B-15JC - 64Kbit Parallel EEPROM, 150ns, 32-PLCC | Microchip
The Microchip AT28C64B-15JC is a 64-Kbit (8,192 x 8) parallel EEPROM with 150 ns read access time, housed in a 32-pin PLCC (13.97 x 11.43 mm) package and rated for commercial temperature operation. It draws 40 mA active current while delivering 220 mW typical power dissipation, and falls back to a 100 µA CMOS standby current when deselected for low-power system designs. A parallel EEPROM is a non-volatile memory device whose I/O architecture mirrors static RAM (SRAM) for read and write cycles but retains its contents without power. Within the broader memory hierarchy, parallel EEPROMs sit between serial EEPROMs (smaller, slower, fewer pins) and NOR flash (higher density but more complex write/erase sequencing), making them ideal for legacy parallel buses, boot ROM, configuration stores, and parameter tables that demand byte-level writes without an erase step. Key features include automatic page-write operation up to 64 bytes per 10 ms cycle, software data protection (SDP) to lock out inadvertent writes, hardware write protection via the WP pin, and a standard JEDEC-compatible pinout that simplifies design-in. The device operates from a single 5 V supply and supports TTL-compatible inputs and outputs. Architecturally, the AT28C64B uses Microchip's advanced non-volatile CMOS process with on-chip latches for address, data, and control, accessed like static RAM for both read and write cycles. The internal charge pump generates the high-voltage programming supply on-chip, eliminating the external VPP required by legacy EPROMs and simplifying board layout. Typical applications include legacy industrial control firmware storage, communication equipment parameter backup, point-of-sale terminals, set-top box configuration memory, and as a direct replacement for older 27C64/2764 EPROMs in systems requiring in-system reprogrammability without UV erasure. The 32-PLCC JEDEC footprint also suits socketed designs where mechanical compatibility with through-hole PLCC sockets is required. When designing with this part, ensure VCC decoupling with a 0.1 µF ceramic capacitor placed within 5 mm of the supply pin. For reliable page-mode writes, respect the maximum 10 ms write cycle time per 64-byte page and assert WE according to the datasheet timing diagram. The WP pin should be tied to VCC or GND through a defined logic level rather than left floating. This page synthesizes distributor pricing, drop-in JEDEC-compatible alternatives, and practical design considerations not found in the manufacturer datasheet alone, giving engineers a single reference for sourcing, replacement, and board-level implementation of the AT28C64B-15JC.
AT29C040A-90TU - 4Mbit 5V Parallel Flash 90ns 32-TSOP | Microchip
The Microchip Technology AT29C040A-90TU is a 4-Mbit (512K x 8) 5-volt-only in-system Flash programmable and erasable read-only memory (PEROM) housed in a 32-pin TSOP (Type I) package, organized as 2048 individually-erasable sectors of 256 bytes each. It supports a parallel interface with a fast 90 ns read access time, a single 4.5 V to 5.5 V supply rail, and single-cycle sector reprogram (erase + program) via internal address and data latches. A Flash memory IC is a type of non-volatile memory that retains stored data when power is removed and supports in-system electrical erasure and reprogramming. The AT29C040A belongs to the NOR Flash family — within the hierarchy non-volatile memory -> Flash memory -> NOR Flash -> parallel NOR Flash -> boot/parameter-storage Flash. NOR Flash provides random byte-level access and execute-in-place capability, which is why it is preferred over NAND for code storage in embedded systems. Key specifications include a 90 ns maximum read access time, a sector program time of approximately 10 ms per 256-byte sector, 2048 eraseable sectors, and an endurance rating of 10,000 write cycles per sector (typical). The device also features hardware and software data protection, low-power CMOS operation, and a JEDEC-standard 32-pin TSOP footprint compatible with surface-mount assembly lines. Operating current is typically 50 mA active and 100 µA standby, supporting battery-friendly embedded designs. The AT29C040A employs a sector-based architecture where any sector can be erased and reprogrammed in a single internal operation without external erasure. The on-chip state machine handles timing and verification internally, offloading complexity from the host microcontroller. Compared with byte-programmable legacy EEPROM, the 256-byte sector architecture dramatically reduces software overhead for firmware updates while still supporting parameter storage when only a few bytes change. Typical applications include embedded firmware storage for industrial controllers, automotive infotainment boot Flash, networking equipment firmware, point-of-sale terminals, and any system requiring in-system reprogrammable non-volatile memory. It is also widely used as a 5V-compatible data-logging buffer where EEPROM density is insufficient. When designing with this device, ensure VCC decoupling with a 0.1 µF ceramic capacitor placed within 5 mm of the supply pin, and respect the maximum 10 ms sector-program timing in your firmware state machine. Because it is a 5 V part, do not connect directly to a 3.3 V MCU without a level translator on the address and data lines. This page synthesizes distributor pricing from DigiKey and Mouser, drop-in Microchip alternatives in the same 32-TSOP footprint, and practical design notes that complement the manufacturer datasheet.