AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
부품 번호: AS4C512M16D4A-62BCNTR ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.9 | $4,450.00 |
| 1,000 | $8.1 | $8,100.00 |
AS4C512M16D4A-62BCNTR 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption. DDR4 is the industry standard for modern computing, offering higher density and speed while maintaining backward compatibility with JEDEC standards.
Key features include a 1.2V power supply, 1600MHz clock rate (PC4-3200), 18ns CAS latency, and a 96-ball FBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is available in commercial temperature range (0°C to +95°C) and is RoHS compliant.
The AS4C512M16D4A-62BCNTR uses a 20nm-class process technology, offering high density and low power. It features a 16n prefetch architecture, which improves bandwidth efficiency. The device includes a temperature sensor for thermal management and supports DLL (Delay-Locked Loop) for precise timing.
Typical applications include servers, networking equipment, industrial PCs, and embedded systems requiring high-capacity, high-speed memory. Its 512M x 16 organization is ideal for systems with a 16-bit data bus, such as high-end routers and switches.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.2V supply and a separate VPP (2.5V) for wordline boost, which must be generated correctly.
드롭인 대체품: AS4C512M16D4A-62BCNTR — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: AS4C512M16D4A-62BCNTR (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Package, Operating Temperature Range, Interface, Supply Voltage.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
AS4C512M16D4A-62BCN
✅ 드롭인✓ 재고 있음
$7.2 / 개
데이터시트 보기 →AS4C512M16D4A-62BIN
✅ 드롭인✓ 재고 있음
$8.1 / 개
데이터시트 보기 →AS4C512M16D4B-62BCNTR
✅ 드롭인✓ 재고 있음
$8.1 / 개
데이터시트 보기 →MT40A512M16TB-062E
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$60 / 개
데이터시트 보기 →K4A8G165WC-BCWE
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$38 / 개
데이터시트 보기 →NT5AD512M16C4-JRI
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$75.58 / 개
데이터시트 보기 →AS4C512M16D4A-62BCNTR 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| 메모리 크기 | 8 Gbit (512M x 16) |
| 공급 전압 | 1.14V ~ 1.26V (nominal 1.2V) |
| Clock Rate | 1600 MHz (DDR4-3200) |
| CAS 레이턴시 | 18 ns |
| 패키지 | 96-FBGA (7.5x13 mm) |
| 동작 온도 | 0°C to +95°C (Commercial) |
| 인터페이스 | POD (Pseudo Open Drain) |
| 데이터 속도 | 3200 MT/s |
| Refresh | Auto-refresh and self-refresh |
| RoHS | Compliant |
| Moisture Sensitivity Level | 3 (168 Hours) |
| Write Cycle Time - Word, Page | 15 ns |
| 실장 유형 | Surface Mount |
| Standard Pack | 1500/reel (Tape & Reel) |
AS4C512M16D4A-62BCNTR 핀 구성
| 핀 A1 | VDD — Power supply (1.2V) |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 A4 | VSS — Ground |
| 핀 A5 | DQ2 — Data input/output 2 |
| 핀 A6 | DQ3 — Data input/output 3 |
| 핀 A7 | VDD — Power supply (1.2V) |
| 핀 A8 | DQ4 — Data input/output 4 |
| 핀 A9 | DQ5 — Data input/output 5 |
| 핀 A10 | VSS — Ground |
| 핀 A11 | DQ6 — Data input/output 6 |
| 핀 A12 | DQ7 — Data input/output 7 |
| 핀 B1 | VDDQ — DQ power supply (1.2V) |
| 핀 B2 | VSSQ — DQ ground |
| 핀 B3 | DM0 — Data mask 0 |
| 핀 B4 | DQS0_t — Data strobe 0 (true) |
| 핀 B5 | DQS0_c — Data strobe 0 (complement) |
| 핀 B6 | VSSQ — DQ ground |
| 핀 B7 | VDDQ — DQ power supply (1.2V) |
| 핀 B8 | DM1 — Data mask 1 |
| 핀 B9 | DQS1_t — Data strobe 1 (true) |
| 핀 B10 | DQS1_c — Data strobe 1 (complement) |
| 핀 B11 | VSSQ — DQ ground |
| 핀 B12 | VDDQ — DQ power supply (1.2V) |
| 핀 C1 | A0 — Address input 0 |
| 핀 C2 | A1 — Address input 1 |
| 핀 C3 | A2 — Address input 2 |
| 핀 C4 | A3 — Address input 3 |
| 핀 C5 | A4 — Address input 4 |
| 핀 C6 | A5 — Address input 5 |
| 핀 C7 | A6 — Address input 6 |
| 핀 C8 | A7 — Address input 7 |
| 핀 C9 | A8 — Address input 8 |
| 핀 C10 | A9 — Address input 9 |
| 핀 C11 | A10/AP — Address input 10 / Auto-precharge |
| 핀 C12 | A11 — Address input 11 |
| 핀 D1 | A12 — Address input 12 |
| 핀 D2 | A13 — Address input 13 |
| 핀 D3 | A14 — Address input 14 |
| 핀 D4 | A15 — Address input 15 |
| 핀 D5 | BA0 — Bank address 0 |
| 핀 D6 | BA1 — Bank address 1 |
| 핀 D7 | BG0 — Bank group 0 |
| 핀 D8 | BG1 — Bank group 1 |
| 핀 D9 | CKE — Clock enable |
| 핀 D10 | CS_n — Chip select (active low) |
| 핀 D11 | ODT — On-die termination |
| 핀 D12 | RAS_n — Row address strobe (active low) |
| 핀 E1 | CAS_n — Column address strobe (active low) |
| 핀 E2 | WE_n — Write enable (active low) |
| 핀 E3 | ACT_n — Activate (active low) |
| 핀 E4 | PAR — Parity input |
| 핀 E5 | ALERT_n — Alert output (active low) |
| 핀 E6 | RESET_n — Reset (active low) |
| 핀 E7 | VDD — Power supply (1.2V) |
| 핀 E8 | VSS — Ground |
| 핀 E9 | VPP — Wordline boost supply (2.5V) |
| 핀 E10 | VDD — Power supply (1.2V) |
| 핀 E11 | VSS — Ground |
| 핀 E12 | VDDQ — DQ power supply (1.2V) |
| 핀 F1 | VSSQ — DQ ground |
| 핀 F2 | DQ8 — Data input/output 8 |
| 핀 F3 | DQ9 — Data input/output 9 |
| 핀 F4 | VDDQ — DQ power supply (1.2V) |
| 핀 F5 | DQ10 — Data input/output 10 |
| 핀 F6 | DQ11 — Data input/output 11 |
| 핀 F7 | VSSQ — DQ ground |
| 핀 F8 | DQ12 — Data input/output 12 |
| 핀 F9 | DQ13 — Data input/output 13 |
| 핀 F10 | VDDQ — DQ power supply (1.2V) |
| 핀 F11 | DQ14 — Data input/output 14 |
| 핀 F12 | DQ15 — Data input/output 15 |
| 핀 G1 | VSS — Ground |
| 핀 G2 | VDD — Power supply (1.2V) |
| 핀 G3 | VSS — Ground |
| 핀 G4 | VDD — Power supply (1.2V) |
| 핀 G5 | VSS — Ground |
| 핀 G6 | VDD — Power supply (1.2V) |
| 핀 G7 | VSS — Ground |
| 핀 G8 | VDD — Power supply (1.2V) |
| 핀 G9 | VSS — Ground |
| 핀 G10 | VDD — Power supply (1.2V) |
| 핀 G11 | VSS — Ground |
| 핀 G12 | VDD — Power supply (1.2V) |
| 핀 H1 | NC — No connect |
| 핀 H2 | NC — No connect |
| 핀 H3 | NC — No connect |
| 핀 H4 | NC — No connect |
| 핀 H5 | NC — No connect |
| 핀 H6 | NC — No connect |
| 핀 H7 | NC — No connect |
| 핀 H8 | NC — No connect |
| 핀 H9 | NC — No connect |
| 핀 H10 | NC — No connect |
| 핀 H11 | NC — No connect |
| 핀 H12 | NC — No connect |
일반적인 애플리케이션
AS4C512M16D4A-62BCNTR 적합 용도: 6 애플리케이션s: Networking Equipment, Industrial Computing, Data Center Servers, Consumer Electronics, Automotive Infotainment, Telecommunications.
Networking Equipment
The AS4C512M16D4A-62BCNTR provides high-density, high-bandwidth memory for routers, switches, and network appliances. Its 8Gb capacity and 3200 MT/s data rate support packet buffering, routing tables, and flow processing. The 1.2V operation reduces power consumption in always-on network infrastructure. With a 96-ball FBGA package, it fits compact line cards. The commercial temperature range is suitable for indoor networking equipment. Its JEDEC compliance ensures compatibility with standard DDR4 controllers used in network processors.
추천
Industrial Computing
In industrial PCs and embedded systems, the AS4C512M16D4A-62BCNTR offers reliable, high-speed memory for data acquisition, control, and HMI applications. Its 8Gb density supports large application footprints and data logging. The 1.2V supply reduces heat generation, important in sealed enclosures. The 96-ball FBGA package is robust for vibration-prone environments. The commercial temperature range (0°C to +95°C) is adequate for most factory floors. JEDEC compliance ensures easy integration with standard industrial motherboards.
추천
Data Center Servers
The AS4C512M16D4A-62BCNTR is ideal for server main memory, providing 8Gb capacity per chip to build large-capacity DIMMs. Its 3200 MT/s data rate meets the bandwidth demands of cloud computing and virtualization. The 1.2V operation contributes to energy efficiency in data centers. The 96-ball FBGA package is standard for DDR4 RDIMMs and UDIMMs. The commercial temperature range is suitable for controlled server environments. JEDEC compliance ensures compatibility with server memory controllers.
추천
Consumer Electronics
In high-end consumer devices like gaming consoles, set-top boxes, and smart TVs, the AS4C512M16D4A-62BCNTR provides fast, low-power memory for smooth graphics and multitasking. Its 8Gb capacity supports large media buffers and app data. The 1.2V supply extends battery life in portable devices. The 96-ball FBGA package is compact for slim designs. The commercial temperature range covers typical consumer use. JEDEC compliance ensures compatibility with consumer SoCs.
추천
Automotive Infotainment
Although the commercial temperature grade limits extreme automotive use, the AS4C512M16D4A-62BCNTR can be used in infotainment systems operating in controlled cabin environments. Its 8Gb capacity supports navigation maps, media playback, and instrument cluster graphics. The 1.2V operation reduces heat in the dashboard. The 96-ball FBGA package withstands vibration. For under-hood applications, consider the industrial grade AS4C512M16D4A-62BIN. JEDEC compliance ensures compatibility with automotive SoCs.
추천
Telecommunications
In telecom base stations and switches, the AS4C512M16D4A-62BCNTR provides high-bandwidth memory for signal processing and protocol handling. Its 8Gb density supports large buffers for voice and data traffic. The 1.2V supply reduces power in remote radio units. The 96-ball FBGA package is suitable for compact line cards. The commercial temperature range is acceptable for indoor telecom equipment. JEDEC compliance ensures compatibility with telecom processors.
추천
추천 제품 요약
엔지니어링 참조 데이터: AS4C512M16D4A-62BCNTR — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | AS4C512M16D4A-62BCN | AS4C512M16D4A-62BIN | AS4C512M16D4B-62BCNTR | MT40A512M16TB-062E | K4A8G165WC-BCWE | NT5AD512M16C4-JRI |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | Samsung Electronics | NXP Semiconductors |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) |
| Clock Rate | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz |
주요 차별점
- Commercial temperature grade with 0°C to +95°C range (vs AS4C512M16D4A-62BIN)
- CAS latency of 18ns (vs AS4C512M16D4B-62BCNTR)
- Tape and reel packaging for automated assembly (vs AS4C512M16D4A-62BCN)
설계 노트
The AS4C512M16D4A-62BCNTR requires a 1.2V VDD supply and a separate 2.5V VPP supply for wordline boost. Ensure these supplies are clean and well-regulated. Use 0.1uF decoupling capacitors close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry point. The VPP supply should be capable of sourcing transient current during write operations.
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Use ground planes beneath the FBGA package to minimize noise. Follow the layout guidelines in the Alliance Memory datasheet for optimal signal integrity.
The AS4C512M16D4A-62BCNTR has a maximum operating temperature of +95°C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB copper. Monitor junction temperature to avoid exceeding the absolute maximum rating of +95°C.
규정 준수 정보
RoHS compliant per distributor listings. Not AEC-Q100 qualified. Lead-free per datasheet.
