메모리 IC
하위 카테고리
제품 (875)
CY14B104NA - 4Mbit 256Kx16 nvSRAM 25ns | Infineon/Cypress
The Cypress Semiconductor (now Infineon Technologies) CY14B104NA is a 4-Mbit nonvolatile static RAM (nvSRAM) organized as 256K x 16 bits, with a 25 ns access speed grade available, housed in a 44-pin TSOP II or 54-ball FBGA package. An nvSRAM is a memory IC that pairs a standard SRAM cell with a nonvolatile QuantumTrap element in each bit cell. Within the memory hierarchy it sits between pure SRAM (fast but volatile) and EEPROM/Flash (nonvolatile but slow to write). nvSRAM behaves like fast SRAM during normal operation and copies the entire array into the nonvolatile elements on power-down or on demand, so no battery backup is required. Key features include three storage operations: hardware STORE triggered by the HSB pin, software STORE via an address sequence, and AutoStore on power-down (enabled by default). Access times of 20 ns, 25 ns, and 45 ns are offered across the family. Write operations are SRAM-fast, giving effectively unlimited endurance during SRAM operation, while the nonvolatile element retains data for years without power. The device is built on Cypress QuantumTrap technology, which uses a proprietary trapping-layer process to capture charge in each cell without the erase/write bottlenecks of Flash. During low-voltage conditions (VCC below VSWITCH), the device inhibits all externally initiated STORE and write operations to protect data integrity from corruption. Typical applications include industrial PLCs and data loggers, RAID/disk-drive controller configuration storage, networking equipment for fast-reboot state retention, and automotive event recorders where the automotive-qualified CY14B104NA variants apply. Design consideration: the 8 ms (typical family value) STORE operation temporarily blocks SRAM access, so firmware should tolerate a short stall on power-down and reserve adequate hold-up capacitance to complete AutoStore. This page synthesizes distributor pricing, verified cross-reference data including the Everspin MRAM drop-in equivalent, and practical design notes not consolidated in the manufacturer datasheet.
CY14V104LA - 4Mb Parallel nvSRAM 3.3V 48-FBGA | Infineon
The Infineon CY14V104LA is a 4-Mbit (512K x 8 / 256K x 16) non-volatile SRAM (nvSRAM) that combines a fast static RAM cell array with a non-volatile storage element in every memory cell, offered in a 48-ball Fine-pitch BGA (6 x 10 mm) package. The device operates from a 3.3 V supply (3.0 V to 3.6 V) and is available in 25 ns and 45 ns access-time grades, providing SRAM-comparable read/write performance with automatic non-volatile backup on power loss. An nvSRAM (non-volatile SRAM) is a hybrid memory class that pairs standard SRAM cells (typically 6T) with a non-volatile element per cell - either a small SONOS-style charge trap or an EEPROM/FRAM-like element - so that on VCC drop the entire contents can be stored to the non-volatile layer in microseconds, then restored on the next power-up. Compared with pure SRAM, nvSRAM eliminates external battery, supercapacitor, or EEPROM-shadow designs; compared with serial EEPROM or FRAM, it offers true parallel bus access and unlimited read endurance. nvSRAMs sit in the memory hierarchy between SRAM (highest speed, volatile) and Flash (non-volatile, slow write), targeting applications needing deterministic, high-speed writes without data-loss risk. Key features include 4-Mbit density organized as 512 Kbytes x 8 or 256 Kwords x 16 (selectable by the /BYTE pin), hardware STORE-on-power-loss using an integrated threshold-detect circuit, automatic RECALL on power-up, and an unlimited SRAM-side read/write endurance typical of static RAM. The parallel interface uses standard JEDEC-style control signals (CE#, OE#, WE#, UB#, LB#) so it can drop into existing SRAM or battery-backed SRAM sockets. The 48-FBGA package is 6 x 10 x 1.20 mm and is RoHS compliant. Internally the CY14V104LA integrates the SRAM array, the non-volatile element, an on-chip STORE capacitor (no external cap required for energy-limited store), voltage-compare and STORE-control logic, and a software-invoked STORE (HSB pin). The architecture enables 0.7 ms typical STORE time and 0.7 ms typical RECALL time while drawing Icc of about 65 mA active and Isb of about 5 mA standby. The 25 ns grade (-BA25XI suffix) delivers faster system clocks; the 45 ns grade (-BA45XI suffix) targets lower-cost industrial systems. Typical applications include industrial controllers, programmable logic controllers (PLC), factory automation data loggers, point-of-sale (POS) terminals, metering, RAID controllers, and gaming equipment. The wide -40 C to +85 C industrial temperature range and automatic power-loss protection make the CY14V104LA particularly suited for systems that must survive brown-outs and uncontrolled power-down events without user intervention. When designing with the CY14V104LA, route the parallel bus with matched trace lengths, keep CE#, OE#, WE# cleanly decoupled to avoid accidental STORE triggering, and follow the datasheet ground-bounce and decoupling recommendations for the 48-FBGA footprint. Note that STORE operations are non-maskable by design - power-supply decoupling directly affects STORE reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the CY14V104LA in a single reference not found in the bare datasheet, including the parametric comparison with the CY14V104NA x16-only and CY14B104L family variants.
CY14V104LA-BA25XI - 4Mbit nvSRAM 25ns FBGA-48 | Infineon
The Infineon Technologies CY14V104LA-BA25XI (originally Cypress Semiconductor) is a 4-Mbit non-volatile SRAM (nvSRAM) organized as 512K x 8 or 256K x 16, with a fast 25 ns access time, 1M STORE cycles, and 20-year non-volatile data retention, housed in a 48-ball FBGA (6 x 10 mm) package rated for -40C to +85C industrial operation. An nvSRAM is a memory IC that combines the fast, unlimited read/write endurance of a standard static RAM with a non-volatile element in each memory cell. In the broader memory hierarchy, nvSRAM sits between volatile SRAM and EEPROM/Flash: it behaves like a parallel SRAM during normal operation but automatically stores the SRAM contents to non-volatile cells on power loss, eliminating the need for external batteries. Key features include the 25 ns access time for zero-wait-state parallel bus designs, automatic STORE on power-down triggered by the hardware STORE (HSB) pin, a minimum 1 million STORE cycle endurance, and 20-year data retention at 85C. The dual organization (byte-wide via x8 mode and word-wide via x16 with byte enables BHE/BLE) lets one design cover both 8-bit and 16-bit buses. Technically, the CY14V104LA performs SRAM reads when CE and OE are LOW and WE and HSB are HIGH; addresses A0-A18 (x8) or A0-A17 (x16) select among 524,288 bytes or 262,144 words. The RECALL function restores non-volatile data to SRAM at power-up, and software-triggered STORE/RECALL sequences are supported via address sequences per the Infineon/Cypress datasheet. Typical applications include industrial PLCs and data loggers, networking equipment configuration storage, medical instrumentation, and automotive/avionics black-box buffers where a sudden power loss must not corrupt data. Design consideration: reserve a small capacitor energy margin on the 3.3V rail so the device can complete a hardware STORE event during brownout; the HSB pin should be monitored or driven by supervisory logic to guarantee the STORE window. This page synthesizes verified distributor pricing, drop-in family alternatives, and practical design guidance not found in the standard datasheet extract, with all data marked with its last-verified date for freshness.
CY62148ESL-55ZAXI - 4Mb 55ns Async SRAM 32-STSOP | Infineon
The Infineon CY62148ESL-55ZAXI is a 4-Mbit (512K × 8) asynchronous static RAM organized as 512K words of 8 bits, with 55 ns access time, supplied in a 32-pin STSOP (Standard Thin Small Outline Package, Type I) and operating from 2.2 V to 5.5 V. It delivers ultra-low active power and deep power-down currents, with CMOS-compatible I/O that interfaces directly to TTL levels. A static RAM (SRAM) is a volatile semiconductor memory that retains data as long as power is applied without requiring refresh cycles, in contrast to dynamic RAM (DRAM). Within the memory hierarchy, SRAM sits above DRAM in performance — measured in nanosecond access times versus tens of nanoseconds for synchronous DRAM — at the cost of density per die area. The CY62148ESL belongs to the low-power SRAM family, used as cache, scratchpad, buffer or boot memory in embedded systems. Key features of the CY62148ESL-55ZAXI include an industry-standard SRAM pinout (JEDEC-compatible) with active-high Chip Enable (CE1) and active-low Chip Enable (CE2) plus Output Enable (OE) and Write Enable (WE) controls, automatic power-down when deselected, and low standby current. The 32-pin STSOP-I footprint is the JEDEC-standardized small-outline thin package widely accepted for space-constrained portable designs. Technically, the CY62148ESL uses a 6-transistor CMOS memory cell with full CMOS I/O buffers, giving the device its TTL-compatible input thresholds. The 55 ns access time corresponds to the part number suffix -55, while the 'SL' family designation indicates the MoBL (More Battery Life) ultra-low-power architecture acquired from Cypress Semiconductor by Infineon. Typical applications include battery-backed portable equipment, cellular phones, pagers, handheld POS terminals, industrial controls, networking line cards, automotive infotainment subsystems and any system that requires non-volatile configuration storage behind a coin-cell backup. The 2.2 V to 5.5 V range covers single-cell Li-ion (2.7-4.2 V), 3.3 V logic rails and legacy 5 V designs from the same silicon. When designing, place a 0.1 µF decoupling capacitor close to each VCC pin and provide a ground plane beneath the package to control I/O switching noise. Verify that CE1, CE2 and WE timing satisfy the datasheet write-cycle constraints when used as boot ROM. This page synthesizes distributor pricing, drop-in JEDEC-compatible 32-STSOP alternatives and practical design notes not found in the standalone manufacturer datasheet, enabling faster part selection for low-power embedded memory designs.
CY62167EV30LL-45BVXI - 16Mb SRAM 45ns 1M×16/2M×8 VFBGA-48 | Infineon
The Infineon CY62167EV30LL-45BVXI is a 16-Mbit (1M × 16 or 2M × 8 configurable) ultra-low-power CMOS static RAM organized as a parallel asynchronous memory with a 45 ns access time, packaged in a 48-ball VFBGA (6 × 8 × 1 mm) outline. Operating from a wide 2.2 V to 3.6 V single supply, the device belongs to the MoBL® family and delivers typical active current of approximately 2 mA at 1 MHz, making it a strong fit for battery-backed and energy-constrained designs. The ball-grid package keeps the PCB footprint extremely small while still exposing a full 16-bit data bus. An asynchronous SRAM (static random-access memory) is a volatile memory that retains data as long as power is applied, without needing refresh cycles. It occupies the memory IC tier of the hierarchy: SRAM -> volatile memory -> memory IC -> semiconductor. Compared with DRAM, SRAM trades density for speed and simplicity, which is why it is favored for cache, FIFOs, and working buffers in embedded systems. The MoBL® process technology used in the CY62167EV30 family achieves very low active current (2 mA at 1 MHz typical) and ultra-low standby current. A BYTE pin on the 48-ball BGA allows the user to organize the array as 1M × 16 (BYTE = VCC) or 2M × 8 (BYTE = VSS). Standard features include chip-enable (CE1#, CE2), output enable (OE#), and write enable (WE#) controls, supporting common asynchronous read/write protocols. The 45 ns access time is well-suited to mid-speed microcontrollers, ASICs, and DSPs that do not require synchronous burst interfaces. The VFBGA-48 (BV48) package provides a small 6 mm × 8 mm footprint suitable for handheld and space-limited designs. Multiple temperature grades are offered within the family (industrial -40 °C to +85 °C and automotive variants), and the part is Pb-free / RoHS compliant. Typical applications include industrial handheld terminals, point-of-sale (POS) terminals, automotive infotainment buffers, networking line cards, and battery-backed metering or instrumentation buffers where data retention must survive short power interruptions. When designing with the CY62167EV30LL-45BVXI, observe proper decoupling (0.1 µF + 1 µF near VCC) and avoid lengthy traces to the data bus to minimize bus-turnaround skew. For lower-power standby, drive CE1# high during idle periods and CE2 low to enter standby mode. This page synthesizes distributor stock, drop-in alternatives and design guidance not consolidated on the manufacturer product page.
CY62168EV30LL-45BVXI - 16Mb SRAM 45ns 3V | Infineon
The Infineon CY62168EV30LL-45BVXI is a 16-Mbit (2M × 8) asynchronous static RAM (SRAM) with 45 ns access time, operating from 2.20 V to 3.60 V, housed in a 48-ball VFBGA (6x8) package. It belongs to the MoBL (More Battery Life) ultra-low-power SRAM family originally developed by Cypress Semiconductor, which is now part of Infineon Technologies. The device delivers high-speed asynchronous read/write access with very low active and standby currents, making it ideal for battery-powered and portable designs. An asynchronous SRAM is a type of volatile memory that does not require a clock for core read and write operations - the address and chip-enable signals directly control access. SRAM sits in the memory hierarchy above DRAM (no refresh needed) and below CPU registers (larger but slower than on-chip cache). The CY62168EV30LL falls into the low-power SRAM category, which trades absolute speed for ultra-low quiescent current to extend battery life in mobile equipment. Key features include very high-speed 45 ns access, 2.2 V to 3.6 V wide voltage range, ultra-low standby power with typical standby current of 1.5 µA (maximum 12 µA), and ultra-low active power with typical active current of 2.2 mA at 1 MHz. The device offers easy memory expansion with active-low CE1 and CE2 chip-enable inputs, automatic power-down when deselected, and CMOS-compatible I/O. The 48-VFBGA (6x8) package is optimized for compact surface-mount designs. The CY62168EV30LL-45BVXI uses a 6-transistor (6T) CMOS SRAM cell architecture with asynchronous address-latch and sense-amplifier circuitry. Its internal organization is 2 M × 8 bits with common I/O data lines and byte-wide access via CE1/CE2 control. The wide voltage range and low-power architecture are achieved through a 0.13 µm low-leakage process and dynamic power management circuits that monitor CE1/CE2 activity. Typical applications include portable media players, handheld GPS units, cellular phone buffers, PDAs and data-acquisition devices, handheld instruments, battery-powered systems, and cellular phone base-band buffering. It also fits industrial low-power data logging and embedded systems that require non-DRAM memory with deterministic low-latency reads. When designing with this device, ensure that VCC decoupling (0.1 µF + 1 µF ceramic) is placed within 5 mm of the supply pins. Because it is a BGA package, proper PCB pad design, reflow profile (per JEDEC J-STD-020), and X-ray inspection are mandatory for reliable assembly. Note that the 45 ns speed grade is conservative for moderate-performance buffering; for higher bandwidth consider the CY62168G30 family. This page synthesizes Infineon/Cypress datasheet specifications, distributor stock and pricing, drop-in and same-package alternatives, and practical PCB/thermal design notes not found in the manufacturer datasheet alone.
CY7C1021DV33-10BVXIT - 1Mbit (64Kx16) 10ns Async SRAM | Infineon
The Infineon CY7C1021DV33-10BVXIT is a high-performance CMOS asynchronous Static RAM (SRAM) organized as 65,536 words by 16 bits (1 Mbit), with a 10 ns access time, housed in a 48-ball VFBGA (6x8) package and supplied on Tape & Reel. It operates from a single 3.0 V to 3.6 V supply and is offered in the industrial temperature grade with the "IT" suffix. An asynchronous SRAM (static random-access memory) is a high-speed volatile memory that does not require a clock signal - read and write operations are triggered directly by chip-enable (CE), output-enable (OE), and write-enable (WE) inputs. SRAM sits in the memory hierarchy above DRAM for speed and below cache for cost/density, and the asynchronous (or "async" part forms the typical choice for direct-mapped buffers in microcontroller and DSP systems. The CY7C1021DV33 family adds an automatic power-down feature that drops ICC to a few microamps when deselected, making it well-suited to battery-powered or power-aware industrial systems. Key features of the CY7C1021DV33-10BVXIT include 10 ns address access time, 10 ns output enable access time, JEDEC-compatible center-power/center-ground pinout, TTL-compatible I/O, and equal read/write cycle times. The 48-VFBGA (6x8) package is only 6x8 mm, giving the densest footprint option in the family alongside the 44-pin 400-mil SOJ and 44-pin TSOP II packages - all sharing the same functional pinout per JEDEC standard. Typical applications include industrial control buffers, networking line cards, automotive infotainment buffers, point-of-sale terminals, set-top box working memory, and microcontroller/DSP scratch-pad memory. The wide x16 data bus minimizes glue logic when paired with 16-bit microcontrollers such as the 80C186, 68HC16, and DSP families. When designing with this device, place a 0.1 uF decoupling capacitor on each VCC/ground pair and follow JEDEC standard PCB layout for 48-VFBGA. The automatic power-down feature reduces standby current to 5 mA typical when CE# is high; use this to extend battery life in portable designs.
D32.31301S.001 - 32GB DDR5-4800 ECC UDIMM | Apacer Memory
The Apacer Memory America D32.31301S.001 is a 32 GB DDR5 SDRAM 288-pin unbuffered ECC DIMM module rated at DDR5-4800 (PC5-38400) with CL40 latency and 1.1 V nominal supply. The module is built from twenty 2G x 8-bit DDR5 synchronous DRAMs in FBGA packages plus an 8 Kbit serial presence detect EEPROM, delivering registered-grade reliability in a UDIMM form factor. DDR5 SDRAM is the fifth-generation Double Data Rate Synchronous DRAM standard that doubles the per-pin bandwidth of DDR4 by using on-die ECC, decision feedback equalization (DFE), and a 32-bit channel architecture with separate CA/CS sub-channels. A DIMM (Dual In-Line Memory Module) is a printed circuit board that carries SDRAM chips and plugs into a host board memory socket; UDIMM variants omit the register/buffer and are the standard form factor for workstations and servers that do not require fully buffered modules. The D32.31301S.001 fits the ECC UDIMM sub-category, adding parity-style error correction that is critical for server workloads and EEC-aware workstation platforms. Key features include the DDR5-4800 data rate (4800 MT/s, equivalent to 38.4 GB/s per module theoretical bandwidth), CL40 CAS latency, 288-pin UDIMM edge connector with 1.1 V VDD / 1.8 V VPP operation, and the on-module 8 Kbit SPD EEPROM that enumerates JEDEC-compliant timings to the system BIOS at power-on. The 288-pin UDIMM form factor follows the JEDEC MO-309A mechanical outline, allowing the module to be installed in any DDR5 UDIMM socket that supports ECC. The module follows the JEDEC DDR5 standard (JESD79-5) for SDRAM protocol, command/address topology, and PMIC integration. Apacer's industrial-grade screening and the SA-HF (solder assembly, halogen-free) designation indicate compliance with RoHS 2.0 and halogen-free PCB requirements, while the 1.1 V nominal operation reduces module power versus DDR4's 1.2 V supply, despite the doubled bandwidth. Typical applications include server-class workstation memory upgrades, edge-computing appliances, single-socket server boot/main memory banks, virtualization hosts, in-memory database workloads, and ECC-required development platforms. The 32 GB density is a sweet spot for workloads that exceed 16 GB but do not need full 64 GB+ populations. Design considerations include host platform DDR5 UDIMM socket validation, BIOS SPD recognition of the Apacer vendor ID, and case-by-case thermal profiling: modules running sustained DDR5-4800 with ECC error correction can dissipate 6-9 W per module and benefit from chassis airflow. This page synthesizes distributor pricing, drop-in cross-vendor DDR5 ECC UDIMM alternatives, and practical platform-compatibility guidance not bundled in the Apacer datasheet.
D32.35303H.001 - 32GB DDR5 ECC UDIMM 5600 VLP | Apacer
The Apacer D32.35303H.001 is a 32 GB DDR5 SDRAM ECC unbuffered DIMM (UDIMM) operating at 5600 MT/s with CL46 timing in a Very Low Profile (VLP) form factor. The module is built from twenty 2G x 8-bit DDR5 synchronous DRAMs in FBGA packages combined with a serial presence detect (SPD) EEPROM of 8 Kbits, and is intended to mount into a standard 288-pin connector socket. Apacer VLP UDIMMs are targeted at 1U server chassis and space-constrained embedded platforms that demand ECC-grade reliability. A DDR5 SDRAM module is a synchronous dynamic random-access memory module built to the JEDEC DDR5 specification. Within the system memory hierarchy, DDR5 sits above LPDDR5 (mobile) and below HBM (high-bandwidth memory), delivering roughly double the per-pin transfer rate of DDR4 while reducing the per-channel voltage from 1.2 V to 1.1 V. As ECC (Error-Correcting Code) memory, it adds single-bit error correction to mainstream server-class reliability, addressing multi-bit soft errors common in densified DRAM arrays. The 288-pin UDIMM form factor is the standard desktop/workstation DIMM, distinguishable from RDIMMs by its lack of a register clock driver, allowing lower latency at the cost of reduced maximum rank count per channel. Key features of the D32.35303H.001 include 32 GB density, 5600 MT/s data rate (PC5-44800), CL46 CAS latency, on-module voltage regulation via a 12V-to-1.1V PMIC, ECC for single-bit error correction, and a halogen-free VLP height that fits 1U server chassis. The 2048x8 DRAM organization (twenty 2Gx8 devices) provides x8 data width with ECC bits distributed across the DRAM array. The Hynix die suffix indicates the underlying memory supplier. In use, this module is recommended for single-CPU workstations, edge servers, and industrial PCs that need ECC error correction without paying the latency penalty of registered memory. The 5600 MT/s speed places it at the high end of mainstream DDR5 server-class throughput, suitable for virtualization hosts, in-memory databases, and content-creation workstations handling 4K/8K media. When designing with VLP UDIMMs, confirm the chassis DIMM slot height: standard VLP modules measure 18.3 mm tall (versus 31.25 mm for full-height DIMMs). Older chassis with tall heatsink shrouds may not accept VLP modules. The on-module PMIC requires the host 12V rail to remain within ±5% tolerance. This page synthesizes distributor pricing, parametric comparisons against ECC UDIMM alternates, and practical compatibility guidance drawn from the JEDEC DDR5 specification and Apacer VLP UDIMM family documentation not consolidated in any single distributor listing.
DA28F320J5A120 - 32Mbit StrataFlash 5V 120ns 56-SSOP | Intel
The Intel DA28F320J5A120 is a 32-Mbit (4 MB / 2 Mwords) 5-Volt Intel StrataFlash memory organized as 4M x 8 / 2M x 16, packaged in a 56-pin SSOP with 120 ns read access time and symmetric 128-Kbyte erase blocks. It is part of Intel's high-density symmetrically-blocked StrataFlash family, delivering CFI-compatible command set support and enhanced data protection features. StrataFlash memory is a type of NOR flash technology that stores two bits per cell (multi-level cell, MLC) by using multiple voltage levels in each floating gate, enabling higher density than traditional single-bit-per-cell NOR flash while preserving the byte-erasability and random-read characteristics that make NOR flash suitable for code storage and execute-in-place (XIP) applications. StrataFlash belongs to the non-volatile memory hierarchy under flash memory, which itself sits under memory ICs and integrated circuits in modern electronic systems. Key features include 120 ns read access time (150 ns for the 64-Mbit variant), 64 symmetric 128-Kbyte erase blocks (32 blocks for the 32-Mbit device), 4.5 V to 5.5 V VCC operation with 3.6 V to 5.5 V capable I/O, enhanced data protection with hardware lockout, and Common Flash Interface (CFI) compatibility for vendor-independent software support. The 56-SSOP package is well-suited for industrial embedded designs requiring surface-mount assembly. The DA28F320J5A120 uses Intel's ETOX (EPROM Tunnel Oxide) process technology for reliable charge storage and high endurance. Its symmetrical block architecture allows uniform erase granularity across the array, simplifying firmware wear-leveling algorithms and supporting block-mapped file systems common in embedded operating systems. Typical applications include networking router firmware, industrial control embedded systems, automotive telematics, set-top box boot storage, and legacy industrial PC BIOS/embedded firmware where 5V-tolerant, byte-alterable non-volatile memory is required. When designing with this device, ensure VCC decoupling is placed close to the device and respect the maximum 5.5 V supply rating; operating above 5.5 V will damage the cell array. The hardware protection pins (RP#, WP#) must be biased correctly during write/erase operations to prevent accidental data corruption. This page synthesizes distributor stock data, drop-in alternative options, and practical design notes not found in the manufacturer datasheet alone.
DS1220Y - 16Kb NV SRAM, 2Kx8, 24-EDIP | Maxim Integrated
The Analog Devices (formerly Dallas Semiconductor / Maxim Integrated) DS1220Y is a 16,384-bit fully static nonvolatile SRAM organized as 2048 words by 8 bits, housed in a 24-pin EDIP (Extended DIP) through-hole package. The device integrates a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition, automatically switching to the internal backup cell when power is lost and writing the data back when VCC returns. A nonvolatile SRAM (NVSRAM) is a hybrid memory technology that combines the byte-level random-access performance and unlimited write endurance of standard SRAM with the data retention of nonvolatile storage. In the DS1220Y, the lithium cell, the SRAM array, and the supply-sense controller are co-packaged inside the EDIP module, which is pin-compatible with the JEDEC-standard 24-pin bytewide SRAM/EEPROM/EPROM (2716/2816) footprint. Within the broader memory hierarchy, the DS1220Y sits between volatile SRAM (no data retention) and true nonvolatile memories such as EEPROM, Flash, and FRAM. Key features include 10 years minimum data retention in the absence of external power, unlimited write cycles, low-power CMOS operation, direct replacement for 2K x 8 volatile static RAM or EEPROM, and automatic write protection during power loss. The Y-speed grade variants (DS1220Y-100, -120, -150, -200) provide access times of 100, 120, 150, and 200 ns respectively, allowing designers to trade speed against cost. Operating from a single 5 V ±10% supply, the device draws only a few milliamps during active read/write and switches to microamp-level backup current when VCC falls below threshold. The DS1220Y is a drop-in replacement for the popular 2K x 8 SRAM and is pin-compatible with the 2716 EPROM and 2816 EEPROM, making it ideal for legacy systems where the original battery-backed SRAM has failed or where unlimited write endurance is required. Typical applications include industrial controllers, point-of-sale terminals, data loggers, PLCs, and instrumentation where settings, calibration constants, or transaction logs must survive power cycles without write-cycle wear. When designing with the DS1220Y, observe that the lithium cell cannot be replaced in the field; therefore, plan for end-of-life replacement after approximately 10 years of powered operation. Decouple VCC with a 0.1 µF ceramic capacitor close to the supply pin, and avoid prolonged exposure to high temperatures to maximize cell life. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found on a single distributor page, helping engineers evaluate the DS1220Y for new designs and legacy repairs.
DS1249AB-70IND - 2Mb NVSRAM, 70ns, 32-EDIP | Analog Devices
The Analog Devices (formerly Maxim Integrated) DS1249AB-70IND is a 2-Mbit (262,144 x 8) fully static nonvolatile SRAM (NVSRAM) with 70 ns access time, housed in a 32-pin Extended DIP (32-EDIP) module that integrates a lithium energy cell. According to the manufacturer datasheet, the device is organized as 262,144 words by 8 bits, supports unlimited write cycles, and retains data for a minimum of 10 years in the absence of external power. An NVSRAM (Non-Volatile SRAM) is a memory class that combines the read/write performance and byte-level endurance of standard SRAM with the data persistence of non-volatile storage. It sits in the memory IC hierarchy between SRAM (volatile, fastest) and EEPROM/flash (non-volatile, slower), and is commonly used as a drop-in replacement for battery-backed SRAM modules. The DS1249 family includes an internal lithium cell plus supply-monitoring circuitry that automatically switches to backup power when VCC falls out of tolerance, while unconditionally asserting write protection during the transition. Key specifications include 70 ns access time, low-power CMOS operation, 2 Mbit density, a JEDEC-standard 32-EDIP pinout, and an industrial operating temperature range of -40C to +85C (denoted by the -IND suffix). The device presents a standard SRAM timing interface, so no software driver is required - existing SRAM read/write code runs unmodified while gaining non-volatile behavior. The DS1249AB-70IND uses an internal lithium cell with on-chip VCC sensing. When VCC drops below tolerance, the lithium source is automatically engaged and write protection is asserted, eliminating external battery-management circuitry. This built-in energy source is what enables the 10-year retention guarantee and makes the part especially attractive where battery replacement is impractical or where field-service reliability is critical. Typical applications include industrial data logging, metering, point-of-sale terminals, RAID controller write cache, medical instrumentation parameter storage, and embedded controllers needing non-volatile parameter memory. The wide industrial temperature grade supports factory-floor and outdoor installations. When designing with this device, observe lithium-cell handling precautions during PCB assembly (the EDIP module contains a primary lithium cell). Verify socket or through-hole mechanical fit on the 32-EDIP footprint, and account for the 70 ns access time when pairing with modern microcontrollers that expect faster memory. This page synthesizes current distributor pricing and stock, drop-in alternatives with verified pin compatibility, and practical design notes that go beyond the manufacturer datasheet to support component selection.
DS1249AB-70IND+ - 2Mb NVSRAM 32-EDIP 70ns | Maxim Integrated
The Maxim Integrated DS1249AB-70IND+ is a 2-Mbit (2,097,152-bit) fully-static Non-Volatile SRAM (NVSRAM) organized as 262,144 words by 8 bits, with a parallel interface and 70 ns access time, housed in a 32-pin Extended DIP (32-EDIP) module with integrated lithium backup. According to the Analog Devices product page, each DS1249AB combines a high-performance CMOS static RAM, a lithium energy source, and a sophisticated power-loss detection/protection circuit on a single module, providing non-volatility without external battery maintenance. An NVSRAM (Non-Volatile Static RAM) is a hybrid memory that behaves exactly like standard SRAM during normal read/write cycles, while a built-in lithium cell and control circuitry continuously monitor VCC. When VCC drops below a defined threshold, the chip automatically switches to the internal lithium source and write-protects the data, retaining the SRAM contents for years without external power. In the system memory hierarchy, NVSRAM sits between SRAM (fastest, volatile) and EEPROM/Flash (non-volatile, slower); it provides near-SRAM write speed with EEPROM-like data retention and unlimited read/write endurance. Key specifications include 2 Mbit density, 70 ns maximum access time over the industrial temperature range, 256 K × 8 organization, automatic VCC switchover, and an industry-standard 32-pin DIP module footprint. The on-board lithium cell provides a typical data-retention capability of ten years, eliminating the need for external batteries, supercaps, or external EEPROM shadowing. The interface is fully parallel and pin-compatible with byte-wide SRAMs, simplifying system upgrades from battery-backed SRAM modules. Typical applications include data logging in industrial controllers, configuration storage in metering equipment, parameter retention in process instrumentation, black-box data capture in transportation systems, and any embedded design that requires both fast random-access writes and guaranteed data retention across an outage. Designers choose the DS1249AB-70IND+ when they need unlimited write endurance and 70 ns read/write speeds without the overhead of software-managed EEPROM wear-leveling. When designing with the DS1249AB, follow the 32-EDIP socket footprint, observe the lithium-cell handling and shipping regulations (UN3481 PI970 for air transport), and provide adequate decoupling (typically 0.1 µF plus 10 µF bulk) near VCC. Avoid subjecting the module to sustained temperatures above +70 °C, which can accelerate lithium-cell self-discharge. Always verify the operating temperature grade - the -IND suffix denotes the industrial -40 °C to +85 °C range. This page synthesizes distributor pricing, parametric same-brand and cross-brand drop-in alternatives, and practical design notes that are not found on a single manufacturer product page.
DS2430AP+ - 256-Bit 1-Wire EEPROM, 6-TSOC | Analog Devices
The Analog Devices (formerly Maxim Integrated) DS2430AP+ is a 256-bit 1-Wire EEPROM organized as 32 bytes of user memory, housed in a 6-pin TSOC (6-LSOJ) surface-mount package measuring 3.76 mm in width. The device communicates over the Dallas/Maxim 1-Wire bus with a 15 µs time-slot bit rate and operates from 2.8 V to 5.25 V on a single data line plus ground, requiring only one microcontroller port pin for full interface. A 1-Wire EEPROM is a serial non-volatile memory that combines data storage, unique device identification, and power delivery on a single conductor. The DS2430AP+ belongs to the broader category of serial EEPROMs (EEPROM -> non-volatile memory -> memory IC -> semiconductor) and is widely used for board identification, calibration constants, and consumable authentication in embedded systems. Because the protocol also carries parasitic power, designers can mount the part on a PCB with only two pads (data + ground), which dramatically simplifies wiring. Key features include a factory-lasered 64-bit registration number (unique 48-bit serial number, 8-bit CRC, 8-bit family code 14h), 32 x 8-bit user-programmable EEPROM, an additional 64-bit OTP area for permanent write protection, and an on-chip 8-bit CRC generator. The EEPROM cells are rated for a minimum of 100,000 write cycles and 10 years of data retention at +85 °C. The device supports both parasitic-power mode (power harvested from the data line) and external-supply mode for write-heavy applications. The DS2430A family uses a strict master-slave timing protocol. Every bit transaction begins with the master pulling the line low for 15 µs; the slave samples in the middle of the slot. A strong pull-up (typically 2.2 kΩ–4.7 kΩ idle, switched to a few hundred ohms during EEPROM writes) is required in parasitic-power mode to supply the programming current. The on-chip CRC and unique 64-bit ROM ID allow multiple DS2430A devices to coexist on a single bus with guaranteed addressing. Typical applications include PCB identification and asset tracking, printer and consumable cartridge authentication, medical-device calibration storage, industrial sensor calibration constants, battery-pack telemetry tags, and accessory authentication for handheld instruments. Its single-wire interface is ideal when board space, connector pin count, or wiring harness complexity is constrained. When designing with the DS2430AP+, follow the manufacturer's 1-Wire timing guidelines, place the pull-up resistor close to the host pin, and use a strong pull-up during EEPROM write cycles in parasitic mode. Decoupling the data line with a small capacitor can improve noise immunity in long-cable applications. The "+" suffix indicates lead-free, RoHS-compliant packaging on tape and reel. This page synthesizes distributor pricing, drop-in alternatives in the same 6-TSOC package, and practical 1-Wire bus design notes that are not consolidated in the manufacturer datasheet — a useful information gain for engineers evaluating the DS2430AP+ for identification and authentication designs.
DS2431G+U - 1Kb 1-Wire EEPROM, 2-SFN Package | Analog Devices
The Analog Devices (formerly Maxim Integrated) DS2431G+U is a 1024-bit, 1-Wire® EEPROM organized as four memory pages of 256 bits each, packaged in a 2-SFN (6.0 mm × 6.0 mm) leadless module. It communicates over a single-contact 1-Wire serial interface, requires only one data line plus ground for power and signaling (parasite-powered), and supports a typical write time of 2 µs to an 8-byte scratchpad before commit to EEPROM. Operating temperature range is -40°C to +85°C (industrial grade). What is a 1-Wire EEPROM? A 1-Wire EEPROM is a non-volatile memory device that uses Maxim's proprietary 1-Wire protocol, which combines power and bidirectional data on a single conductor plus ground. This dramatically simplifies wiring in identification, calibration, and accessory-detect applications by eliminating the multi-pin SPI/I²C bus. The hierarchy is: 1-Wire EEPROM -> serial EEPROM -> non-volatile memory (NVM) -> memory IC -> semiconductor. Each 1-Wire device also carries a unique 64-bit ROM ID, enabling multi-drop addressing on a single bus. Key features of the DS2431G+U include four 256-bit memory pages that can be individually write-protected or put into EPROM-emulation mode (bits can only change from 1 to 0), a unique factory-lasered 64-bit ROM identification number, 8-byte scratchpad for verified write-then-copy operation, and full compatibility with the 1-Wire protocol used throughout the iButton®/1-Wire ecosystem. The 2-SFN package exposes a single DQ data/power contact and a GND paddle, making it ideal for compact PCB pads or solder-down identification tokens. Architecturally, the DS2431 uses an on-chip silicon unique-ID ROM (8-byte family code + 6-byte serial number + 1-byte CRC) generated at wafer probe, plus a four-page EEPROM array accessed through an 8-byte SRAM scratchpad. Writes go through the scratchpad with a built-in 8-bit CRC verification before being copied atomically to the target page, which gives robust data integrity for in-field updates. Typical applications include PCB identification and asset tagging, consumable authentication (ink cartridges, medical disposables, batteries), board-level calibration storage, secure feature enablement, and iButton/1-Wire bus identification nodes. The DS2431G+U is the SFN-packaged member of the broader DS2431 family that also ships in TO-92, TSOC, and TDFN packages. When designing with the DS2431G+U, ensure the DQ line has a strong pull-up (typically 4.7 kΩ to VPU) for both power delivery and open-drain signaling, and reserve host-side firmware for the MATCH ROM / SKIP ROM / WRITE SCRATCHPAD / READ SCRATCHPAD / COPY SCRATCHPAD command sequence. Strong ESD and surge protection on the DQ contact is recommended for connector-exposed applications; the DS2431 family is well documented in Maxim/Analog Devices Application Note 3829. This page synthesizes distributor pricing, drop-in package-compatible alternatives, and practical design notes not found in the standalone manufacturer datasheet.
DS2433+ - 4Kb 1-Wire EEPROM TO-92-3 | Maxim Integrated
The Maxim Integrated DS2433+ is a 4 Kbit (4096-bit) 1-Wire EEPROM organized as sixteen pages of 256 bits (32 bytes) each, packaged in a 3-pin TO-92-3 through-hole form factor. The part derives all read and write power directly from the 1-Wire communication line, requiring no external supply, and integrates a factory-lasered 64-bit registration number that includes a unique 48-bit serial number, an 8-bit CRC, and an 8-bit family code (23h) for absolute device identification on a multi-drop bus. What is a 1-Wire EEPROM? A 1-Wire EEPROM is a non-volatile memory device that communicates over a single data/power line using Maxim's proprietary 1-Wire protocol. Unlike I2C or SPI EEPROMs that require multiple signals, 1-Wire parts halve the wiring harness in identification, calibration, and consumable-tracking applications. Within the broader taxonomy, the DS2433+ sits under: EEPROM -> non-volatile memory -> memory IC -> integrated circuit -> semiconductor. Its single-pin parasitic-power architecture is the defining differentiator versus I2C EEPROMs (24Cxx family) and SPI EEPROMs (25Cxx family). Key features include: 4 Kbit of user-programmable EEPROM, a 256-bit (32-byte) scratchpad for write-buffered transactions, page-write granularity of 32 bytes, ±5 ns overdrive data-rate support, 1-Wire protocol compatibility with the DS1990 family, and an ESD rating of ±4 kV Human Body Model. The on-board 64-bit ROM enables a single microcontroller GPIO to identify, read, and write multiple DS2433+ devices on a multidrop bus. Technically, the DS2433+ uses a silicon-level serial number burned at wafer test for traceability. Its strict 1-Wire reset/presence/Read-ROM/Match-ROM/Skip-ROM command set follows the iButton standard, allowing the part to coexist with DS18B20 temperature sensors, DS2401 serial-number chips, and DS1990 ROMs on the same wire. Write cycles commit a full 32-byte page in approximately 10 ms. Typical applications include PCB identification and asset tagging, consumable authentication (printer cartridges, medical disposables), board-level calibration data storage, iButton accessories, and standalone serial-number registration for FPGAs or microcontrollers lacking on-board unique IDs. The 3-pin TO-92 through-hole package makes it ideal for products that must be hand-inserted or panel-mounted with a mechanical lanyard, since the package doubles as an electrical contact point. When designing with the DS2433+, reserve a 4.7 kΩ pull-up on the DQ line and add a 1N914 or equivalent ESD diode to GND for transient suppression in industrial environments. Use the part's CRC to validate read integrity and always issue a Skip ROM or Match ROM command before scratchpad writes to avoid address collisions. This page synthesizes distributor pricing as of 2026-10-07, drop-in compatible alternatives (DS24B33+, DS2431, DS1971), and practical 1-Wire design notes not consolidated on the manufacturer's product page.
DS24B33+ - 4Kb 1-Wire EEPROM, TO-92 | Analog Devices
The Analog Devices / Maxim Integrated DS24B33+ is a 4096-bit (4 Kbit) 1-Wire® EEPROM organized as 16 memory pages of 256 bits each, packaged in a 3-pin TO-92 through-hole form factor. The device communicates over a single-conductor 1-Wire bus following the standard 1-Wire protocol, with each device carrying a factory-programmed, unalterable unique 64-bit registration number for multidrop addressing. A 1-Wire EEPROM is a non-volatile memory device that combines data storage with a one-wire serial communication interface pioneered by Dallas Semiconductor (now part of Analog Devices). Unlike I²C or SPI EEPROMs that require two or four signal lines, 1-Wire parts use only a single data line plus ground, allowing power and data to share the same conductor via parasitic power. Within the broader memory hierarchy, the DS24B33 sits in the EEPROM family (electrically erasable programmable read-only memory), which is a subset of non-volatile memory (NVM) and ultimately semiconductor memory ICs. Key features include 200K write/erase cycle endurance per page, a 32-byte scratchpad for verified data transfer, sixteen 32-byte pages of EEPROM, an on-chip CRC-16 generator for data transfer validation, and an operating voltage range of 2.8V to 5.25V. Data writes are protected by a strict read/write protocol that verifies the scratchpad contents against the master before committing to EEPROM, eliminating partial-write corruption. The DS24B33 is software- and pin-compatible with the legacy DS2433, providing a modern silicon replacement that uses newer semiconductor technology. The TO-92-3 package supports hand-up (uidance-style hand-solderable) installation in low-volume and field-deployed applications where surface-mount is impractical, such as outdoor sensor enclosures, automotive wiring harnesses, and access control tokens. Typical applications include PCB identification and authentication, consumable authentication (ink cartridges, medical sensors), access control iRODs (ibutton ID rings), environmental sensor calibration storage, inventory tracking, and iButton (button-style ID) accessories. The unique 64-bit ROM registration number enables 1-Wire multidrop networks where many devices share a single bus. A key design consideration is the requirement for a 4.7 kΩ pull-up resistor on the 1-Wire data line, plus proper ESD protection. For long cable runs, the strong pull-up during write/erase cycles and proper ground return are essential for reliable operation. This page synthesizes synthesizer-equipped manufacturer datasheet data, distributor stock, includes, applies, applies, design considerations and practical design notes not found in the manufacturer datasheet alone.
DS24B33Q+T&R - 4Kb 1-Wire EEPROM, 6-TDFN | Maxim Integrated
The Maxim Integrated DS24B33Q+T&R is a 4096-bit 1-Wire EEPROM organized as 16 memory pages of 256 bits each, packaged in a 6-pin TDFN (3x3 mm) with exposed thermal pad. The device communicates over a single-conductor 1-Wire bus, supports 2 us typical write cycle, and operates from 3.3V or 5V rails. Each device carries a unique 64-bit factory-programmed registration number that is unalterable, enabling secure node identification on the bus. A 1-Wire EEPROM is a non-volatile memory device that uses Maxim's proprietary single-wire half-duplex protocol, requiring only one data line plus ground for communication and power. The bus topology typically supports multiple devices in parallel and provides parasitic-power capability, which is why 1-Wire parts (EEPROM, temperature sensors, secure authenticators) dominate identification, calibration-token, board-registration, and anti-counterfeiting use cases. Key features of the DS24B33 include 4 Kbit density (16 pages x 256 bits), a 32-byte scratchpad for write verification before commit-to-EEPROM copy, open-drain 1-Wire I/O with internal pull-up equivalent, 40-year data retention typical, and industrial -40C to +85C operating range. The 6-TDFN-EP package provides low-profile 3x3 mm PCB real estate and a thermal pad for stable mass-attach reflow. Internally, the DS24B33 follows the standard 1-Wire state-machine protocol: RESET, presence pulse, ROM/function command, then read/write to the scratchpad and EEPROM array. The 64-bit unique ROM ID is split into 1-byte family code (0x23 for this part), 48-bit serial number, and 8-bit CRC. The device is targeted at consumables authentication, PCB ID tagging, and small-parameter storage in industrial/embedded systems. Typical applications include PCB identification and serialization, consumables authentication (medical, printing, industrial fluids), iButton-style accessory detection, calibration-data storage, and board-revision tracking. The exposed-pad package also supports solder-probe programming during manufacturing test. When designing with the DS24B33, observe the 1-Wire timing budget (reset/presence/slot windows defined by the protocol) and choose the master pull-up strength to satisfy the rise-time spec at the maximum expected bus capacitance. Industrial-grade buses (2+) need a strong pull-up after RESET to deliver adequate recovery time on long stubs.
DS28E25G+T - 1-Wire SHA-256 Authenticator, 4Kb EEPROM | ADI
The Analog Devices / Maxim Integrated DS28E25G+T is a 1-Wire SHA-256 secure authenticator with 4 Kb (512 bytes) of user EEPROM, housed in a 6-pin TDFN-EP (2-SFN, 6x6 mm) package. It combines crypto-strong bidirectional challenge-and-response authentication based on the FIPS 180-3 Secure Hash Algorithm with 4 Kbits of general-purpose user memory and a unique 64-bit ROM ID. The IC operates from a single 1-Wire data line plus parasitic or local power (2.97 V to 3.63 V) and supports overdrive communication at 142 kbps. What is a 1-Wire Secure Authenticator? It is a type of cryptographic security IC that protects embedded systems against counterfeiting, cloning, and unauthorized reflow. The category sits inside the broader hierarchy of secure authentication IC -> cryptographic processor -> secure element -> embedded security. ADI's DeepCover family layers physical tamper resistance on top of standard cryptography to shield secret keys from side-channel attacks. The DS28E25 belongs to the DeepCover embedded security family and is a member of the DS28E2x SHA-256 secure-authenticator family, differentiated by EEPROM size and feature set. Key features include a hardware SHA-256 engine, a 256-bit secret key, a unique 64-bit lasered ROM ID per device, 4 Kbits (512 bytes) of user EEPROM organized as sixteen 32-byte pages, an additional 8-byte secure memory area, GPIO with selectable logic levels, and a decrement-only counter. Authentication runs in less than 5 ms at the standard 1-Wire speed of 15.4 kbps, enabling fast production-line verification. Operating temperature range is -40 °C to +85 °C, and quiescent current is approximately 1 µA in sleep mode. Typical applications include medical sensor authentication to prevent counterfeit disposables, battery-pack authentication for power tools and e-bikes, printer cartridge identification, industrial control module authentication, and accessory/peripheral authentication for IoT endpoints. Designers use the DS28E25 to add a cryptographic "finger-print" to consumables and field-replaceable modules so that host firmware can refuse to operate with unauthorized replacements. When designing with this device, follow ADI reference schematic DS28E25-Schematic and observe 1-Wire pull-up sizing on the data line: 1 kΩ to 5 kΩ typical at standard speed, dropping to a few hundred ohms for overdrive. Place the strong pull-up MOSFET near the device when using parasite power; an external 3.3 V supply simplifies designs above 25 °C ambient. This page synthesizes distributor pricing, drop-in alternatives from the DS28E2x family, and practical design notes that go beyond the manufacturer datasheet to help hardware engineers shorten their BOM validation cycle.
DS28E25P+T - 1-Wire SHA-256 Authenticator, 4Kb EEPROM, TSOC-6
The Analog Devices / Maxim Integrated DS28E25P+T is a DeepCover Secure Authenticator that combines a FIPS 180-3-compliant SHA-256 cryptographic engine with 4 Kbits (512 bytes) of user EEPROM in a 6-pin TSOC package. Housed in the compact 6-TSOC (0.148", 3.76 mm width) surface-mount package, the DS28E25P+T communicates over a single-wire Maxim 1-Wire bus and operates from a 3.0 V to 3.6 V single supply while parasitically drawing power from the data line when required. The "+T" suffix denotes tape-and-reel packaging. What is a Secure Authenticator? A secure authenticator is a specialized IC that stores a secret key in protected memory and performs a cryptographic challenge-response handshake with a host controller, allowing the host to verify that a peripheral (sensor, battery, accessory, or consumable) is genuine before granting access, transferring data, or activating functionality. Within the broader taxonomy, the DS28E25 sits in the hierarchy: secure authenticator -> authentication IC -> security IC -> semiconductor. Its DeepCover family designation indicates multilayer physical security protecting the on-chip secret key from invasive and non-invasive attack. The DS28E25 implements bidirectional SHA-256 challenge-and-response authentication using a 256-bit secret and a unique 64-bit ROM ID that is factory-lasered into each die. The device integrates an on-die SHA-256 accelerator and a 4 Kbit (512-byte) user EEPROM array partitioned into four 128-byte pages, with each page lockable to support write-protect-once, write-protect-permanently, and OTP/secret modes. Operating temperature spans -40 C to +85 C (industrial grade), and the part is rated for a typical 1-Wire pull-up of 2.2 kohm with strong ESD protection on the IO/data pin. The DS28E25 is widely used to authenticate medical sensors, batteries and chargers, printer cartridges, industrial sensors, and any peripheral whose authenticity directly affects safety, IP protection, or revenue. By placing an inexpensive DS28E25 on a consumable or accessory and storing a unique secret in its EEPROM, OEMs can deter cloning and gray-market substitution. Compared with software-only authentication, the DS28E25 places the secret inside a tamper-resistant IC, making key extraction materially harder. When laying out the PCB, keep the DQ/IO trace short and place a single 2.2 kohm pull-up to the host-side 1-Wire rail; avoid stubs and long parallel runs to other digital lines. Ensure the host GPIO used for the 1-Wire bus is open-drain capable, and budget for the 1-Wire reset/presence pulse timing as specified in the datasheet timing section.
DS28E25Q+U - 1-Wire SHA-256 Secure Authenticator | Analog Devices
The Analog Devices / Maxim Integrated DS28E25Q+U is a DeepCover secure authenticator that combines crypto-strong bidirectional SHA-256 challenge-and-response authentication with 4 Kb of user EEPROM, packaged in a 6-pin TDFN (3x3 mm) form factor. Operating from 2.97 V to 3.63 V, it communicates over the proprietary 1-Wire bus using Maxim's FIPS 180-3-compliant SHA-256 engine and provides a 64-bit unique ROM ID plus a separate secret used to derive per-session HMAC-SHA256 signatures. What is a secure authenticator? A secure authenticator is a specialized IC that proves the authenticity of a peripheral, accessory, consumable, or sensor to a host processor using a hardware-stored cryptographic key that is never exposed on the bus. Authenticators sit beneath cryptographic coprocessors, secure elements, and Trusted Platform Modules in the security-IC hierarchy; they are typically the lowest-cost and smallest-footprint option for hardware-based anti-counterfeiting in resource-constrained nodes such as printer cartridges, medical sensors, and IoT accessories. Key features of the DS28E25Q+U include SHA-256 challenge-and-response authentication, 4 Kb (512 bytes) of user EEPROM organized as sixteen 32-byte pages, an increment-only counter for monotonic anti-rollback usage tracking, a programmable GPIO with optional authentication-gated control, and on-chip 1-Wire parasitic-power support that allows the device to draw operating current from the data line when an external supply is not present. Each device ships with a factory-programmed 64-bit registration number that is guaranteed unique and is used as the address on the 1-Wire bus. The DS28E25Q+U leverages Analog Devices' DeepCover physical-security techniques, including active die shielding, cryptographic key generation on-chip, and storage of the master secret in non-readable memory that resists both invasive and non-invasive attack vectors. A 1-Wire front-end reduces the host-side pin count to a single data line plus ground, simplifying board layout in dense systems where GPIO is scarce. Typical applications include printer cartridge authentication and refill detection, IoT sensor/peripheral pairing and anti-counterfeiting, medical device accessory identification and calibration data storage, secure feature setting for configurable systems, license management, and intellectual property protection. Designers pair the DS28E25Q+U with a host MCU or SoC running Maxim's DS2465 or DS2480B 1-Wire bridge. When designing with the DS28E25Q+U, place a low-ESR decoupling capacitor close to the VCC pin when parasitic power is not used, and observe Maxim's 1-Wire timing guidelines to maintain bus integrity across cable lengths up to 100 m. Designers should also evaluate the optional GPIO mode early - using authentication to gate a power rail or enable signal removes the need for a separate secure load switch. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
DS28EC20+ - 20Kb 1-Wire EEPROM, TO-92-3 | Analog Devices
The Analog Devices DS28EC20+ is a 20480-bit (20 Kbit) 1-Wire EEPROM organized as 80 memory pages of 256 bits each, plus an additional 256-bit page reserved for control functions, and is delivered in a TO-92-3 through-hole package. It communicates over a single-contact 1-Wire interface at a standard speed of up to 15.4 kbps or an overdrive speed of up to 90 kbps, with the host supplying power parasitically through the same data line. According to the manufacturer datasheet (Revision 10), data is written via a 32-byte scratchpad, verified with a read-back, and finally copied to the EEPROM array, providing strong write-cycle integrity for embedded logging. A 1-Wire EEPROM is a serial non-volatile memory that combines data storage and communication on a single conductor plus ground, allowing multiple parts to share one bus and to be identified by a unique 64-bit ROM ID. The DS28EC20 belongs to the EEPROM -> non-volatile memory -> memory IC hierarchy within the broader semiconductor category, and it is one of the largest-density single-contact serial EEPROMs in the 1-Wire family, second only to higher-density siblings like the DS28CM00. Key features include a wide operating range from 2.8 V to 5.25 V on VPUP, an operating temperature of -40 °C to +85 °C, a write endurance of 200k cycles per door, and over 40 years of data retention. The DS28EC20 also provides a high degree of backward compatibility with the legacy DS2433, requiring only a lengthening of tPROG from 5 ms to 10 ms, making it a popular migration target for retrofit designs that need more memory than 4 Kbit-class 1-Wire parts can offer. The TO-92-3 footprint suits through-hole PCB assemblies and probe-style mechanical enclosures. The DS28EC20 uses a single-pin CMOS interface with internal parasitic-power charge-pump storage. The overdrive mode (4–5.25 V VPUP) enables faster factory programming and high-throughput identification, while standard mode supports long cable runs up to several meters. Its unique 64-bit ROM address and robust CRC-16 allow reliable device selection on a multidrop bus, simplifying firmware that needs to identify, authenticate, or store calibration data on a per-module basis. Typical applications include per-board identification and traceability in industrial control modules, calibration and configuration storage in sensor assemblies, accessory authentication in medical and test equipment, firmware/license key storage in embedded systems, and tamper-evident parameter logging in metering devices. The 20 Kbit capacity is sufficient for storing calibration curves, user settings, audit logs, or small lookup blocks. When migrating from DS2433 (4 Kbit) or DS2431 (1 Kbit), the DS28EC20 is a 5x-20x density upgrade on the same 1-Wire protocol. A key design tip is to add a 2.2 kΩ pull-up resistor on the 1-Wire data line to a regulated 3.3 V or 5 V rail (VPUP), and ensure your CRC-16 routine matches the device-generated polynomial so that multidrop bus contention is detected reliably. This page synthesizes distributor pricing, same-package alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers an at-a-glance engineering reference for the DS28EC20+.
DS28EC20+T - 20Kb 1-Wire EEPROM, TO-92-3 | Analog Devices
The Analog Devices (Maxim Integrated) DS28EC20+T is a 20480-bit (20Kb) 1-Wire EEPROM organized as 80 memory pages of 256 bits each, with an additional page reserved for control functions, and is housed in a 3-pin TO-92-3 through-hole package. It communicates over the single-conductor Dallas Semiconductor 1-Wire bus, follows the standard 1-Wire protocol, and each device carries its own factory-lasered, unalterable 64-bit ROM registration number that allows it to be individually addressed on a multidrop 1-Wire net. An EEPROM (Electrically Erasable Programmable Read-Only Memory) is a type of non-volatile memory that retains data when power is removed and supports byte-level or page-level electrical erase and rewrite cycles. The DS28EC20 belongs to the EEPROM > non-volatile memory > memory IC > integrated circuit taxonomy. Data is written to a 32-byte scratchpad, verified by reading it back, and then committed to the EEPROM array - this scratch-and-copy flow gives the DS28EC20 strong write-verify integrity even though it shares a single wire with power and data. Key features of the DS28EC20+T include a 20Kb (2.5KB) user-accessible array with 256-bit page granularity for efficient block writes, parasite power operation (the device harvests operating power directly from the 1-Wire data line), an internal CRC16 generator on the 64-bit ROM and on scratchpad reads for robust error detection, and a unique per-device serial number that doubles as a node address on a multidrop bus. The 1-Wire interface requires only a single data line plus ground, simplifying cable runs for remote or sensor-mounted identification nodes. Architecturally the DS28EC20 combines a CMOS EEPROM array with a 1-Wire front end and a hard-wired 64-bit serial number. The CMOS process yields low active and standby current budgets that match the modest energy available from the 1-Wire pull-up, while the dedicated scratchpad decouples host-side write latency from EEPROM programming time. The TO-92-3 package matches the legacy Dallas Semiconductor form factor, allowing direct mechanical and pin-compatibility upgrades of older 1-Wire EEPROM designs. Typical applications include electronic accessory and consumable identification, board serialization and anti-counterfeiting, building automation node addressing, industrial sensor tagging, and any multidrop 1-Wire network where each node must carry its own unique identifier plus user-writable storage. Because the device powers itself from the data line, no local supply rail is required at the node. When designing with the DS28EC20+T, observe strict 1-Wire timing: the host must provide a strong pull-up to 5V (or 3.3V in low-voltage mode), respect t_RSTL/t_RSTH/t_PDL/t_PDH reset and presence timing windows, and verify each scratchpad write with a CRC16 match before issuing the Copy & Lock command. Note that the internal ROM copy-lock mechanism is one-time per page, so plan page allocation before programming the lock state. The TO-92 leads should be clipped or potted when used in mechanically exposed installations. This page synthesizes distributor pricing from DigiKey, Mouser and LCSC, pin-compatible 1-Wire EEPROM alternatives, and practical 1-Wire bus design notes not found in the bare manufacturer datasheet, providing an engineer-grade reference for sourcing and applying the DS28EC20+T.
DS28EC20P+ - 20Kb 1-Wire EEPROM | Analog Devices | TSOC-6
The Analog Devices (formerly Maxim Integrated) DS28EC20P+ is a 20-Kbit (20480-bit) 1-Wire EEPROM organized as 80 memory pages of 256 bits each, with an additional page reserved for control functions, housed in a 6-pin TSOC surface-mount package. The device operates from a single-contact 1-Wire serial interface that carries both data and parasitic supply, eliminating the need for an external power pin and enabling connection with a single data line plus ground return. A 1-Wire EEPROM is a type of non-volatile serial memory IC that combines data storage and communication over a single conductor using a vendor-specific signaling protocol, falling within the EEPROM memory hierarchy and broader memory product classification. Memories fall within the semiconductor IC hierarchy, which is part of the discrete and integrated semiconductor electronics stack. The 1-Wire interface is widely used in identification, calibration, accessory-authentication, and board-tagging applications because it minimizes wiring and allows multiple devices to share one bus. Key features of the DS28EC20P+ include a 32-byte scratchpad that verifies data before committing to EEPROM, page write capability of up to 32 bytes per write cycle, a unique 64-bit ROM ID for multi-drop bus addressing, an Overdrive mode that raises the bus speed up to 80 MHz equivalent for faster reads, and ESD protection rated per JEDEC HBM on the IO pin. The device derives its operating current parasitically from the 1-Wire line during communication, with the EEPROM page write current supplied from an external reservoir capacitor. The DS28EC20 architecture uses an addressable-cell decoder with a precision charge pump to program the floating-gate EEPROM cells, ensuring 200K write-cycle endurance and greater than 40-year data retention. Its robust ROM-SHA test structure enables 64-bit unique serialization across billions of devices, and the Overdrive Skip ROM command provides backward compatibility with standard-speed 1-Wire hosts when used on a single-drop bus. Typical applications include printed circuit board identification and traceability, sensor calibration data storage, medical device accessory authentication, industrial control module tagging, and consumable authentication in printers or analyzers. The device is designed for new designs per the manufacturer product page and is well-suited for both factory-floor automation and field-deployed equipment. When designing with this part, observe the 1-Wire timing requirements published in the device datasheet, choose a properly sized reservoir capacitor for EEPROM write currents, and consider ESD layout practices on the exposed single data line. The TSOC-6 package supports standard surface-mount reflow while keeping the wire-bond loop compact for reliable 1-Wire signaling. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone, and is intended as an engineering decision aid for sourcing and second-source planning.