MOSFET
제품 (1294)
FQD6N25TM - 250V 4.4A N-Channel QFET MOSFET | onsemi
The onsemi FQD6N25TM is an N-Channel QFET power MOSFET rated at 250 V drain-to-source voltage and 4.4 A continuous drain current, housed in a surface-mount TO-252AA (DPAK) package with 1.0 ohm RDS(on) at VGS = 10 V. This enhancement-mode planar stripe DMOS device is produced using onsemi's (formerly Fairchild Semiconductor) proprietary QFET technology, delivering low gate charge of 6.6 nC typical and fast switching characteristics suited to off-line switchers, DC-DC converters, and general-purpose power switching. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which the gate voltage modulates the conductivity of a channel between drain and source. Power MOSFETs such as the FQD6N25TM belong to the discrete semiconductor family and sit within the broader taxonomy: power MOSFET -> MOSFET -> field-effect transistor -> discrete semiconductor -> semiconductor. Their key advantages over bipolar transistors include high input impedance, fast switching, and no minority-carrier storage time, which makes them the workhorse of modern switch-mode power supplies. Key features include a 250 V VDS rating that provides ample headroom for 110-220 V rectified off-line applications, a continuous ID of 4.4 A at TC with pulsed capability well above this, an ultra-low RDS(on) of 1.0 ohm at VGS = 10 V to minimize conduction losses, and a typical gate charge of 6.6 nC that reduces drive losses at high frequency. The TO-252AA surface-mount footprint with an exposed drain tab supports 2.5 W dissipation at TA and 45 W at TC, and the device is RoHS compliant. The FQD6N25TM uses onsemi's planar stripe DMOS process technology, which trades slightly higher specific on-resistance for lower cost and excellent ruggedness. Its avalanche-rated single-pulse energy and dv/dt tolerance make it suitable for snubberless switching topologies, while the intrinsic body diode supports use in half-bridge and synchronous-rectifier-replacement circuits where a dedicated Schottky is not present. Typical applications include AC-DC flyback and forward converters, solid-state relay (SSR) outputs, motor control drivers, and general-purpose low-side switches. Designers select this part where the 250 V rating provides margin against voltage transients on rectified mains rails, and where 4.4 A continuous current is sufficient without active cooling. When designing with this part, ensure the gate drive swing reaches at least 10 V to fully enhance the channel and achieve the rated 1.0 ohm RDS(on); a 12 V gate drive is recommended for best performance. Provide adequate copper area on the drain tab to keep junction temperature below 150 C under worst-case load, and consider an external TVS or snubber for highly inductive loads to stay within the device's avalanche rating. This page synthesizes distributor pricing, drop-in alternatives from multiple manufacturers, and practical design notes that go beyond the raw manufacturer datasheet, giving engineers a single consolidated reference for sourcing, substitution, and circuit design with the FQD6N25TM.
FQP50N06 - 60V 50A N-Channel MOSFET TO-220 | onsemi
The onsemi FQP50N06 is a 60V, 50A N-Channel enhancement-mode power MOSFET housed in a TO-220-3 through-hole package, originally produced using Fairchild Semiconductor's proprietary planar stripe DMOS technology (now part of onsemi). Designed for high-current switching, it offers a low on-resistance of 0.022 ohm typical at VGS=10V, supporting high-efficiency power conversion across automotive, industrial, and consumer applications. An N-Channel MOSFET is a voltage-controlled semiconductor switch that turns on when a positive voltage is applied to the gate relative to the source. It sits within the broader taxonomy: MOSFET -> field-effect transistor -> discrete semiconductor -> power semiconductor. N-Channel devices are preferred over P-Channel in most high-current applications because they offer lower Rds(on) per unit silicon area, lower conduction losses, and higher transconductance for the same die size, making them the default choice for low-side switches, synchronous rectifiers, and motor drivers. Key features include a 60V drain-source breakdown voltage (V(BR)DSS), 50A continuous drain current at Tc, 120W maximum power dissipation, fast switching speed, and avalanche energy rating. The TO-220-3 package provides excellent thermal dissipation with a tab that can be bolted to a heatsink for high-current applications, while the through-hole leads provide mechanical robustness for demanding environments. The FQP50N06 utilizes DMOS (Double-Diffused Metal-Oxide Semiconductor) technology with a planar stripe cell layout, achieving an excellent trade-off between low on-resistance, high avalanche ruggedness, and fast switching. Its low gate charge (Qg typically 32 nC) and low input capacitance enable efficient high-frequency operation in switching power supply and motor drive topologies. The body diode supports inductive load switching. Typical applications include DC-DC converters, motor drive circuits (H-bridge, half-bridge), solenoid and relay drivers, LED lighting drivers, power inverters, UPS systems, and audio amplifiers. In switching power supplies it is used as the main switching element or synchronous rectifier; in automotive applications it drives fuel injectors, lamps, and small motors; in audio amplifiers it serves as the output stage of Class D amplifiers and as a switch in protection circuits. When designing with this device, ensure the gate drive voltage reaches at least 10V for full enhancement and minimum Rds(on). Add a gate-source pull-down resistor (10-100 kohm) to prevent inadvertent turn-on from dv/dt-induced gate charge. For switching frequencies above 50 kHz, use a dedicated gate driver IC rather than driving the gate directly from a logic output, and always include a snubber or TVS across the drain-source for inductive loads. This page synthesizes distributor pricing, drop-in alternatives, application notes, and PCB design guidance that goes beyond the manufacturer datasheet to accelerate design-in decisions.
GAN111-650WSB - 650V 97mΩ GaN FET TO-247 | Nexperia
The Nexperia GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) power FET in a TO-247 through-hole package, combining Nexperia's high-voltage GaN HEMT H2 technology with low-voltage silicon MOSFET technologies in a normally-off cascode configuration. It delivers a 21 A continuous drain current (at Ta) and 107 W power dissipation (at Ta), enabling superior switching performance in high-density power conversion. A GaN FET (Gallium Nitride Field-Effect Transistor) is a wide-bandgap power transistor that operates as a higher-frequency, higher-efficiency successor to the silicon MOSFET in the power semiconductor hierarchy. Within the taxonomy GaN FET -> HEMT -> power transistor -> discrete semiconductor -> power management, GaN devices deliver lower on-resistance per unit area, faster switching edges, smaller magnetic components, and reduced conduction/switching losses compared with silicon superjunction MOSFETs at the same voltage rating. Key features of the GAN111-650WSB include 650 V drain-source blocking voltage, 97 mΩ typical on-resistance (RDS(on)), and a normally-off architecture that simplifies gate drive and failsafe behavior. The TO-247 package offers industry-standard through-hole mounting with robust thermal performance for high-current applications. The cascode H2 HEMT topology provides a hardened gate that withstands standard silicon MOSFET gate-drive levels. Typical applications include high-efficiency AC-DC and DC-DC converters, server and telecom switch-mode power supplies (SMPS), photovoltaic microinverters and string inverters, on-board chargers (OBC) for electric vehicles, and industrial motor drives. The 650 V rating also makes it suitable for three-phase PFC front ends and totem-pole bridgeless PFC topologies. When designing with this device, ensure the gate driver can supply sufficient pull-down current to handle high dv/dt transitions, and place the gate-source loop as small as possible to minimize ringing. Compared with silicon superjunction MOSFETs of similar RDS(on), the GAN111-650WSB delivers substantially lower switching losses and supports higher switching frequencies, reducing magnetic component size. This page synthesizes Nexperia datasheet parameters, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
GAN111-650WSBQ - 650V 97mOhm GaN FET TO-247 | Nexperia
The Nexperia GAN111-650WSBQ is a normally-off (enhancement-mode) N-channel Gallium Nitride (GaN) FET rated at 650 V drain-source voltage with an on-state resistance of 97 mOhm, capable of 21 A continuous drain current (at Ta) and 107 W power dissipation in a through-hole TO-247-3L (SOT429) package. A GaN FET is a power transistor built on gallium nitride, a wide-bandgap (WBG) semiconductor with a bandgap of roughly 3.4 eV versus 1.1 eV for silicon. Within the power-semiconductor hierarchy (transistor -> FET -> wide-bandgap power transistor -> GaN HEMT), GaN devices switch faster and with lower switching losses than silicon MOSFETs or IGBTs, enabling higher-frequency power conversion with smaller magnetics. The GAN111-650WSBQ combines Nexperia's high-voltage GaN HEMT H2 technology with an integrated low-voltage silicon MOSFET in a cascode configuration. The cascode stack delivers a true normally-off gate behavior, allowing the device to be driven with a conventional gate drive voltage of 10 V like a standard silicon MOSFET, simplifying gate-driver selection compared with direct-drive e-mode GaN parts. Key differentiating specifications include the 97 mOhm RDS(on) figure of merit, the 650 V avalanche-classed drain rating, a wide operating temperature range of -55 C to +175 C, and the rugged TO-247 through-hole package that simplifies thermal design and prototyping compared with SMD GaN packages. Typical applications include high-efficiency switched-mode power supplies (SMPS), totem-pole bridgeless power factor correction (PFC) stages, LLC resonant converters, solar / renewable-energy inverters, and servo or industrial motor-drive front ends where high-frequency, high-voltage switching directly reduces converter size and loss. When designing with this device, minimize gate-loop and power-loop inductance, and provide a negative or zero-voltage gate turn-off to suppress dv/dt-induced turn-on; verify board layout against the manufacturer datasheet layout guidance for high-frequency GaN switching. This page synthesizes distributor pricing, verified drop-in alternatives, pinout data, and practical GaN-specific design notes not consolidated on the manufacturer product page alone.
GS0650182LTRXUMA1 - 650V 18A GaN Power Transistor | Infineon
The Infineon GS0650182LTRXUMA1 is an N-channel 650V Gallium Nitride (GaN) power transistor rated for 18A continuous drain current (Tc), housed in an 8-PDFN (8x8 mm) surface-mount package with an on-resistance of 0.11 ohm and a total gate charge of 4 nC per the verified Farnell distributor listing. Marketed under the Legacy Gan Systems product line following Infineon's acquisition of GaN Systems, this enhancement-mode HEMT delivers low conduction and switching losses for high-frequency, high-efficiency power conversion. A Gallium Nitride (GaN) transistor is a wide-bandgap semiconductor power switch that sits in the hierarchy: GaN FET -> HEMT (High Electron Mobility Transistor) -> power transistor -> discrete semiconductor. Compared with conventional silicon MOSFETs, GaN HEMTs offer dramatically lower gate charge, lower output capacitance, zero reverse recovery charge, and higher switching frequency capability. These traits make GaN transistors the preferred choice for next-generation AC/DC, DC/DC, and totem-pole PFC power stages where efficiency, power density, and thermal performance are paramount. Key features of the GS0650182LTRXUMA1 include the 650V drain-source blocking voltage, 18A continuous drain current at case temperature, 0.11 ohm on-resistance, and a low 4 nC gate charge enabling high-frequency switching. The normally-off enhancement-mode gate structure provides intrinsic safety and simplifies gate drive design versus cascode or depletion-mode GaN devices. The PDFN-8 (8x8 mm) package provides an exposed thermal pad for low thermal resistance and is footprint-compatible with industry-standard GaN land patterns. At the architecture level, this GaN HEMT uses a silicon-substrate GaN-on-Si epitaxial process, which integrates the high-electron-mobility AlGaN/GaN heterostructure onto a standard silicon wafer. The 2DEG (two-dimensional electron gas) channel yields electron mobility roughly an order of magnitude higher than silicon, which translates directly into the device's low RDS(on) x Qg figure-of-merit. The result is a switch that can operate efficiently at frequencies well above what silicon MOSFETs achieve. Typical applications include totem-pole bridgeless PFC converters for server and telecom AC/DC front ends, high-frequency LLC and quasi-resonant DC/DC stages in industrial SMPS, photovoltaic microinverters and string inverters, on-board chargers for electric vehicles, and Class-D audio amplifiers where low dead-time losses matter. Designers choose GaN over SiC or silicon MOSFETs when the priority is highest switching frequency, smallest magnetic components, and best efficiency at partial loads. When designing with this part, observe the absolute maximum VDS of 650V and ensure adequate margin below that value during transient ringing on the switching node. Use a gate drive voltage of typically 6V with a recommended negative turn-off bias to prevent false triggering from Miller coupling, and keep the high-current loop area minimal on the PCB to limit parasitic inductance. The exposed pad must be soldered to a sufficient copper pour - typically 1 square inch or more - to dissipate the conduction losses at full load. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers shorten the selection and qualification cycle for 650V GaN power stages.
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
The Infineon IAUA120N04S5N014AUMA1 is a 40 V N-channel OptiMOS™ 5 power MOSFET housed in a surface-mount PG-HSOF-5-2 (sTOLL) package with 1.4 mΩ maximum R<sub>DS(on)</sub> and 120 A continuous drain current, qualified to AEC-Q101 for automotive use. The device integrates an exposed-drain tab that doubles as both electrical contact and primary thermal path, enabling compact footprint designs with low thermal resistance. An N-channel power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is a voltage-controlled device in which a positive gate-to-source voltage creates a conducting channel between drain and source, enabling high-current switching or low-loss linear regulation. Within the broader semiconductor hierarchy it belongs to the discrete transistor family, sits beneath Insulated-Gate Bipolar Transistors (IGBTs) for sub-600 V applications, and above RF MOSFETs and small-signal FETs; it is the workhorse of synchronous rectification, motor drive, and high-current load switching. The IAUA120N04S5N014AUMA1 is part of Infineon's OptiMOS™ 5 40 V family that targets automotive 12 V and 24 V board nets. Key features include an extremely low on-state resistance of 1.4 mΩ maximum at V<sub>GS</sub>=10 V, a logic-level-compatible gate threshold range suitable for direct microcontroller drive, and 100% avalanche-tested ruggedness. The sTOLL package's source-down clip-mount construction gives a junction-to-case thermal resistance compatible with 136 W power dissipation on properly designed PCBs. Architecturally, the device uses Infineon's advanced OptiMOS™ 5 trench cell structure that minimizes both R<sub>DS(on)</sub> × Q<sub>g</sub> and R<sub>DS(on)</sub> × Q<sub>oss</sub> figure-of-merits, which directly translates to lower conduction loss and reduced switching loss. This makes it ideal for high-frequency synchronous buck converters and OR-ing circuits that cycle at 100 kHz to 1 MHz. Typical applications include automotive 12 V and 24 V brushless DC (BLDC) motor drives, electronic power steering (EPS), electric water/oil pumps, body-control modules, high-current DC-DC converters, and battery protection circuits. Its automotive-grade reliability also suits industrial high-current switching. When designing with this device, ensure the PCB land pattern uses the recommended sTOLL footprint with sufficient copper area on the drain tab to keep junction temperature within safe limits; a 1 oz copper pour of at least 1 cm² is recommended for full 100 A+ operation.
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
The Infineon IAUA180N04S5N012AUMA1 is an N-channel 40 V power MOSFET from the OptiMOS-5 40 V family, delivering 180 A continuous drain current and 125 W power dissipation in a compact PG-HSOF-5-2 (sTOLL) surface-mount package. It is specified at 40 V VDS, with a typical R_DS(on) of 1.2 mΩ at 10 V VGS, and is qualified to AEC-Q101 for automotive use. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or switch current in power-conversion circuits. Power MOSFETs sit in the broader semiconductor taxonomy as discrete transistors -> FETs -> MOSFETs -> power MOSFETs. The 40 V class is commonly used in 12 V automotive subsystems where load-dump transients can drive rails up to 35-40 V, requiring headroom beyond the nominal bus voltage. Key features include the OptiMOS-5 trench technology that minimises R_DS(on) x Qg figure-of-merit, a low 1.2 mΩ on-resistance that reduces conduction losses, and a 56 mm² footprint (7x8 mm² sTOLL) that is smaller than the legacy DPAK (65 mm²). The device is qualified to AEC-Q101, supports 100% R_g-tested avalanche, and integrates a monolithic body diode for hard-switching topologies. The sTOLL (MO-319A / IEC HSOF-5) leadless package provides a top-side thermal pad for low thermal resistance and excellent solder-joint reliability, while the 5-pin layout enables source-sense and gate-drive Kelvin connections. The low FOM allows high-frequency switching up to several hundred kHz in synchronous-rectifier and ORing applications. Typical applications include 12 V automotive electric power steering (EPS), brushless DC motor drives, battery disconnect switches, eFuse and high-side load switches, and 48 V -> 12 V DC-DC converters. The high inrush capability also makes it suitable for hot-plug and reverse-battery protection circuits. When designing with this device, prioritise Kelvin-source connection to the gate driver to suppress common-source inductance, and use a TVS clamp on the gate to limit VGS below ±20 V. Thermal design should assume worst-case R_DS(on) at hot Tj and apply sufficient PCB copper or an external heat spreader. This page synthesises distributor pricing, drop-in alternatives, and practical design notes for IAUA180N04S5N012AUMA1 not found in the manufacturer datasheet, optimised for engineers evaluating Infineon OptiMOS-5 40 V parts for automotive power designs.
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
The Infineon IAUA210N10S5N024AUMA1 is an N-channel OptiMOS™ 5 power MOSFET rated at 100 V drain-source breakdown, 2.4 mΩ maximum on-resistance (RDS(on)) at VGS=10 V, and 210 A continuous drain current (Tj), dissipating up to 238 W (Tc) in a surface-mount PG-HSOF-5-4 (7×8 mm² sTOLL) package. It is AEC-Q101 qualified for automotive applications and specifically designed for 48 V HVAC systems, BLDC motor drives, and high-current DC-DC converter power stages. What is an automotive-grade N-channel MOSFET? A metal-oxide-semiconductor field-effect transistor (MOSFET) is a voltage-controlled switch used to efficiently route and regulate power in electronic systems. An N-channel MOSFET conducts when a positive gate-source voltage exceeds its threshold; the OptiMOS 5 family from Infineon is the company's fifth-generation 100-200 V trench MOSFET platform, optimized for ultra-low RDS(on) per unit silicon area. In the broader taxonomy, it belongs to: power MOSFET -> discrete semiconductor -> power management component -> semiconductor device. Automotive-grade (AEC-Q101) variants are individually screened for temperature, vibration, and reliability stress demanded by 12 V, 24 V, and 48 V vehicle electrical systems. Key differentiating specifications include a typical gate charge (Qg) tuned for low switching losses at high frequencies, an avalanche-rated single-pulse body diode, and a kelvin-source pin configuration in the PG-HSOF-5-4 package that separates the gate-drive return from the high-current source path. This decoupling reduces source-inductance ringing and improves switching performance in hard-switched topologies. The 100 V VDS rating provides substantial headroom above the 48 V automotive bus maximum, while the 2.4 mΩ RDS(on) minimizes conduction losses at high current, making the device well suited for high-power-density designs where PCB real estate is constrained. Typical applications span automotive 48 V HVAC blowers and pumps, electronic power steering (EPS), brushless DC motor drive half-bridges, isolated DC-DC converter primary-side switches, hot-swap and OR-ing controllers in server/industrial 48 V rails, and high-current synchronous rectification stages. The AEC-Q101 qualification also makes the part attractive for off-road, agricultural, and construction vehicle electronics where environmental robustness is critical. When designing with this device, attention to PCB layout, gate-drive loop inductance, and thermal management is essential. The exposed pad of the PG-HSOF-5-4 package must be soldered to a sufficiently large copper pour, and a low-inductance gate-drive return is required to realize the device's rated switching performance. Designers should also verify SOA at the intended DC-link voltage and continuous current, since the 210 A rating is junction-temperature limited and derates significantly with case temperature. This page synthesizes distributor pricing, drop-in automotive-grade alternatives, and practical thermal/SOA design notes not consolidated in the manufacturer datasheet.
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
The Infineon IAUA220N08S5N021AUMA1 is an 80 V N-channel power MOSFET from the OptiMOS-5 75V-120V automotive platform, rated for 220 A continuous drain current (Tj) and 211 W power dissipation (Tc), housed in a surface-mount PG-HSOF-5-4 package measuring 7x8 mm². It features an ultra-low R_DS(on) of 2.1 mΩ, automotive-grade qualification per AEC-Q101, and is optimized for high-current switching in 12 V and 24 V automotive electrical systems. The S5 generation silicon delivers substantial conduction-loss reduction versus legacy OptiMOS-3 parts. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an electric field on the gate insulator to modulate the conductivity of the semiconductor channel between source and drain. Within the broader taxonomy, N-channel MOSFETs sit inside the power-MOSFET family, which in turn belongs to discrete semiconductors, and specifically to the automotive-grade OptiMOS-5 product line. The 'N-channel' designation means the majority carriers are electrons, yielding lower on-resistance per unit silicon area than equivalent P-channel parts. In switching converter, motor drive, and load-switch topologies, the MOSFET acts as the synchronous rectifier or high-side/low-side switch. Key electrical specifications include a maximum drain-to-source voltage V_DS of 80 V, a continuous drain current of 220 A (Tj-rated), pulsed avalanche capability, gate threshold voltage V_GS(th) typically around 2-3 V, and an R_DS(on) of 2.1 mΩ at 10 V V_GS. The OptiMOS-5 technology improves figure-of-merit (R_DS(on) × Q_g) by 30% versus the prior generation. The PG-HSOF-5-4 package provides an exposed source-pad thermal interface enabling direct PCB heat-sinking through copper pours, with a low thermal resistance path to the heatsink. Typical applications span automotive 48 V mild-hybrid auxiliary drives, electric power steering (EPS), brake-by-wire systems, LED headlamp power stages, HVAC blower motor drives, e-mobility controllers, and high-current DC-DC converters. The AEC-Q101 qualification and 175 °C maximum junction temperature ensure reliability under automotive underhood thermal cycling. The 80 V V_DS rating provides ample margin over 12 V/24 V battery transients (load-dump pulses up to ~35 V for 12 V systems, ~58 V for 24 V systems). When designing with this MOSFET, place the gate driver within 5 mm of the gate pin to minimize parasitic loop inductance. Use a 10 Ω gate resistor to dampen ringing. Provide a thermal copper-pour area of at least 100 mm² on the source pad to achieve the rated 211 W Tc dissipation. Verify V_GS never exceeds the ±20 V absolute maximum during switching transients to avoid gate-oxide failure.
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
The Infineon IAUC100N04S6L014ATMA1 is a 40 V N-channel power MOSFET built on Infineon's OptiMOS 6 process technology, delivering 100 A continuous drain current (Tc) and 1.4 mOhm maximum R<sub>DS(on)</sub> in a 5x6 mm PG-TDSON-8 (SuperSO8) leadless surface-mount package. It is qualified to AEC-Q101 for automotive applications and is part of Infineon's IAUC automotive MOSFET family. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or modulate current in power-conversion circuits. As an N-channel enhancement-mode device, the IAUC100N04S6L014 turns on when V<sub>GS</sub> exceeds the threshold, conducting current from drain to source with very low conduction loss. In the broader taxonomy, this part belongs to: power MOSFET -> discrete semiconductor -> power management component -> semiconductor device. Key features include 40 V drain-source breakdown voltage (V<sub>DS</sub>), 100 A continuous drain current at case temperature, 1.4 mOhm maximum on-resistance (R<sub>DS(on)</sub>) at V<sub>GS</sub>=10 V, low gate charge Q<sub>G</sub> typical of OptiMOS 6, and 100 W maximum power dissipation. The SuperSO8 5x6 mm footprint offers an excellent thermal path via the exposed pad while keeping board area compact, making it ideal for high-current 12 V automotive systems where PCB real estate is constrained. The OptiMOS 6 40 V process delivers a strong figure of merit (FOM = R<sub>DS(on)</sub> x Q<sub>G</sub>), minimizing switching and conduction losses simultaneously. Compared to the previous OptiMOS 5 generation, the 6th-generation die shrinks on-resistance per unit area, improving both thermal performance and efficiency in high-frequency switching applications. The robust avalanche-rated body diode and dv/dt ruggedness further support hard-switched topologies. Typical applications include 12 V automotive ECU power switching, electric power steering (EPS), braking systems, body control modules, high-current DC-DC converters, and battery management system (BMS) protection. The 40 V rating also makes it well suited to industrial 24 V bus switching where transient headroom is required. When designing with this MOSFET, observe safe operating area (SOA) limits at high V<sub>DS</sub> and I<sub>D</sub> combinations and ensure the gate drive voltage reaches at least 10 V for full enhancement. Drive strength and gate-loop inductance should be minimized to control switching losses and ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the IAUC100N04S6L014ATMA1 not found in the manufacturer datasheet alone, helping engineers shorten component selection and qualification cycles.
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
The Infineon IAUC100N04S6L020ATMA1 is a 40 V N-channel power MOSFET built on Infineon's OptiMOS 6 40V technology, housed in a 5x6 mm SS08 (PG-TDSON-8) leadless surface-mount package. It delivers 100 A continuous drain current (Tc) and 75 W power dissipation (Tc) with an ultra-low R<sub>DS(on)</sub> typical of 2.0 mΩ at V<sub>GS</sub>=10 V, making it one of the lowest-on-resistance 40 V MOSFETs in this footprint. The device is qualified for automotive applications and ships in Tape & Reel packaging (TMA1 suffix). A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used in switching power conversion, motor drive, and load management. The IAUC100N04S6L020 belongs to the OptiMOS 6 family, which sits in the discrete-semiconductor hierarchy: MOSFET -> power transistor -> discrete semiconductor -> semiconductor device. The N-channel variant requires a positive gate-source voltage to conduct and is the dominant choice for low-side switching, high-current synchronous rectification, and OR-ing applications. Key features of the IAUC100N04S6L020 include a 40 V drain-source breakdown voltage (V<sub>(BR)DSS</sub>) suitable for 12 V and 24 V automotive rails, a maximum R<sub>DS(on)</sub> of 2.04 mΩ at V<sub>GS</sub>=10 V and I<sub>D</sub>=50 A, low gate charge Q<sub>G</sub> for high-frequency switching, and an operating junction temperature range of -55 °C to +175 °C. The leadless SS08 (PG-TDSON-8) package offers a top-side cooling thermal pad that drastically reduces thermal resistance compared with DPAK, allowing 75 W dissipation on a standard JEDEC 1s0p PCB footprint. The OptiMOS 6 platform improves switching figure-of-merit (R<sub>DS(on)</sub> x Q<sub>g</sub>) over earlier OptiMOS generations, reducing both conduction and switching losses in 40 V automotive systems. The 2 mΩ on-resistance at 100 A means the device dissipates only ~20 W at full rated current, a value that would have required a much larger TO-220 part a decade ago. Typical applications for this part include 12 V/24 V automotive ECU power switching, electric power steering (EPS) and braking system MOSFETs, BLDC motor drive half-bridges, high-current DC-DC converter synchronous rectifiers, battery management system (BMS) protection switches, and USB-PD / e-fuse load switches. The combination of automotive-grade qualification and SS08 footprint makes it a drop-in upgrade for older OptiMOS 5 designs. When designing with the IAUC100N04S6L020, ensure the gate drive voltage reaches at least 10 V for full enhancement and use a Kelvin-source connection (pin 4) to avoid R<sub>DS(on)</sub> degradation from source-bond inductance. Keep the source-pad copper pour to at least 100 mm² to achieve the rated 75 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and design notes not found on the manufacturer datasheet - including same-brand OptiMOS 6 family variants and cross-brand equivalents that share the PG-TDSON-8 footprint.
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
The Infineon IAUC100N04S6L025ATMA1 is a 40 V N-channel power MOSFET built on Infineon's latest OptiMOS 6 40V process technology, rated for 100 A continuous drain current and housed in a 5 x 6 mm PG-TDSON-8 (SuperSO8) leadless surface-mount package. It delivers an ultra-low typical on-state resistance of 2.5 mOhm at 10 V VGS and dissipates up to 62 W at TC = 25 C. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that uses an electric field at the gate to modulate current flow between drain and source. In the broader device taxonomy, this part sits within discrete semiconductors -> MOSFETs -> N-channel enhancement-mode power MOSFETs -> low-voltage (sub-75 V) trench MOSFETs designed for high-current switching. The OptiMOS 6 family represents Infineon's sixth-generation 40V trench technology, optimized for the lowest possible RDS(on) x Qg figure of merit at automotive-grade reliability. Key features of the IAUC100N04S6L025ATMA1 include 2.5 mOhm max RDS(on) at VGS=10 V, 100 A continuous ID at TC=25 C, 62 W power dissipation, and an automotive-grade AEC-Q101 qualification. The SuperSO8 5x6 package provides a Kelvin-source connection at pin 4 that suppresses the gate-loop source-inductance effect, enabling cleaner switching transitions and lower dynamic losses than standard SO-8 devices. It is rated for operation from -55 C to +175 C junction temperature. Technically, this part uses a shielded-gate trench cell architecture. The IAUC prefix in the part number designates Infineon's automotive-grade product line. The "S6" suffix indicates the OptiMOS 6 technology generation, "L025" denotes the 2.5 mOhm RDS(on) class, and "ATMA1" is the tape-and-reel ordering code. Compared with the prior OptiMOS 5 generation, this device achieves roughly 30% lower RDS(on) and significantly reduced gate charge. Typical applications include automotive 12 V and 24 V load switching, electric power steering (EPS), brake-by-wire systems, DC-DC converter high-side switches, battery management system (BMS) protection, and motor drive H-bridges. It is also widely deployed in industrial e-fuses, hot-swap controllers, and 48 V mild-hybrid systems where its low conduction loss improves system efficiency. When designing with this device, pay close attention to PCB layout for thermal management. The PG-TDSON-8 package requires a sufficiently large drain-pad copper pour (typically >= 1 sq inch on a 2 oz outer layer) to keep RDS(on) rise under continuous load. Use a Kelvin-source connection to pin 4 (or leave it floating if not used) to minimize source-inductance-induced switching loss. This page consolidates Infineon datasheet parameters, distributor stock and pricing tiers, AEC-Q101 qualification status, drop-in alternative MPNs, and practical layout guidance - information not assembled in any single source on the open web.
IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
The Infineon IAUC100N04S6N015ATMA1 is a 40 V N-channel OptiMOS-6 power MOSFET rated for 100 A continuous drain current (Tc) and 1.5 mΩ typical R<sub>DS(on)</sub>, packaged in a 5x6 mm PG-TDSON-8 (SSO8) leadless surface-mount outline for automotive power-train and high-current switching applications. The device is part of Infineon's OptiMOS-6 40V generation, designed to deliver the industry's lowest on-resistance per silicon area in the small 5x6 mm² footprint, with 100 W (Tc) power dissipation capability and AEC-Q101 qualification. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate current flow between drain and source terminals. Within the broader power semiconductor taxonomy, the IAUC100N04S6N015ATMA1 sits as a discrete N-channel enhancement-mode MOSFET, belonging to the OptiMOS-6 family of low-voltage (≤40V) trench MOSFETs optimized for synchronous rectification, motor control, and battery switching in 12 V/24 V automotive systems. Its SS08 leadless package is a member of the TDSON family that provides a low parasitic source-inductance footprint via the drain tab. Key features include a 40 V drain-source breakdown voltage (V<sub>DS</sub>), 1.5 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, 100 A continuous drain current at case temperature 25 °C, and 100 W power dissipation. The device is qualified to AEC-Q101 for automotive use, supports a standard ±20 V gate-source voltage rating, and is rated MSL 1 for unlimited floor-life reflow compatibility. From an architecture perspective, the IAUC100N04S6N015ATMA1 uses Infineon's latest OptiMOS-6 trench-gate cell technology to minimize R<sub>DS(on)</sub> x Q<sub>g</sub> figure of merit - critical for high-frequency synchronous buck converters where switching losses dominate. The 5x6 mm² SS08 leadless footprint allows direct attachment to PCB thermal copper, dramatically reducing junction-to-ambient thermal resistance versus traditional DPAK alternatives. Typical applications include automotive 12 V/24 V high-current switching, electric power-steering (EPS) motor drives, braking system controllers, body-electronics load switches, and battery-disconnect units in mild-hybrid vehicles. It also serves as the synchronous rectifier MOSFET in 48 V-to-12 V DC-DC converters. When designing with this MOSFET, use V<sub>GS</sub>=10 V drive for full enhancement-mode operation, place the gate driver within 10 mm of the gate pin to minimize parasitic inductance, and ensure the PCB drain copper pour is sized for the continuous current rating. A gate-source resistor of 10 kΩ is recommended to prevent unintended turn-on from dV/dt transients. This page synthesizes distributor pricing, AEC-Q101 compliance verification, drop-in alternatives in the PG-TDSON-8 footprint, and thermal design guidance not found in the manufacturer datasheet alone.
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
The Infineon IAUC100N04S6N022ATMA1 is a 40 V N-channel power MOSFET built on Infineon's OptiMOS 6 process technology, rated for 100 A continuous drain current (Tc) and 75 W power dissipation (Tc), housed in a surface-mount PG-TDSON-8 (5x6 mm) leadless package. It is part of Infineon's automotive-grade IAUC family targeting highest quality and robustness levels for automotive powertrain and chassis applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used to efficiently route or switch high currents at high speeds. MOSFETs sit within the broader transistor hierarchy (MOSFET -> transistor -> discrete semiconductor) and within Infineon's portfolio they belong to the OptiMOS 6 product line, which optimizes the figure-of-merit R_DS(on) x Q_g to deliver lower conduction and switching losses than prior generations. The PG-TDSON-8 package provides a low-inductance leadless footprint suitable for high-frequency switching converters and motor drives. Key specifications of the IAUC100N04S6N022 include a maximum drain-source voltage V_DSS of 40 V, a typical on-state resistance R_DS(on) of 2.2 mOhm at V_GS = 10 V, and 100 A continuous drain current at case temperature. The S6 die variant indicates Infineon's latest silicon revision, delivering improved switching performance and lower gate charge compared to legacy S5 parts. Its AEC-Q100 automotive qualification makes it directly suited to 12 V and 24 V automotive subsystems where reliability and ruggedness are mandatory. Typical applications include 12 V automotive brushed and brushless DC motor drives, electronic power steering (EPS), electric water/oil pumps, transmission control units (TCU), body electronics modules, and DC-DC converter high-side/low-side switches. The 2.2 mOhm R_DS(on) minimizes conduction loss in high-current paths, while the low Q_g reduces driver losses. When designing with this MOSFET, ensure the gate driver supplies at least 10 V V_GS for full enhancement and that PCB copper area is sized to keep the junction temperature within the -55C to +175C operating range under worst-case load. The drain tab is electrically connected to the drain terminal and must be soldered to a sufficiently large copper pour for thermal dissipation. This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes drawn from the Infineon OptiMOS 6 datasheet and AEC-Q100 automotive design references, providing information not consolidated on any single distributor page.
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
The Infineon IAUC100N04S6N028ATMA1 is a 40 V N-channel automotive MOSFET in the OptiMOS 6 40 V family, delivering 100 A continuous drain current and an ultra-low typical on-resistance of 2.8 mΩ in a surface-mount PG-TDSON-8 package. It is qualified for automotive use, targets high-current synchronous rectification and battery-protection switching, and dissipates up to 62 W at 25 °C case temperature. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch in which the gate field modulates a conduction channel between source and drain. Within the discrete-semiconductor hierarchy, the MOSFET sits above the transistor and below the integrated circuit; N-channel enhancement-mode MOSFETs such as this part are the workhorses of low-voltage power conversion because their low R<sub>DS(on)</sub> minimizes conduction loss. The OptiMOS 6 platform extends this trend with a 40 V cell pitch engineered for synchronous buck converters, OR-ing switches, and hot-swap controllers in 12 V automotive systems. Key specifications include a maximum drain-source voltage V<sub>DS</sub> of 40 V, continuous drain current I<sub>D</sub> of 100 A at T<sub>C</sub> = 25 °C, pulsed drain current I<sub>DM</sub> of 400 A, gate threshold V<sub>GS(th)</sub> in the 1.5 V to 2.5 V range, and total gate charge Q<sub>g</sub> tuned for fast switching at hundreds of kHz. The PG-TDSON-8 (TDSON-8) package exposes a metal-drain thermal pad that keeps junction-to-case thermal resistance R<sub>thJC</sub> below 2 C/W, enabling 62 W continuous dissipation on a properly cooled PCB. Typical applications are 12 V automotive ECU power rails, battery management system (BMS) protection FETs, electric power steering (EPS) motor inverters, and high-current DC-DC converters. The combination of automotive-grade qualification and PG-TDSON-8 footprint also makes it attractive as a drop-in successor to legacy 40 V DPAK/TO-252 MOSFETs in industrial DC-DC bricks where PCB rework is impractical. When designing with this part, prioritize low-inductance Kelvin-source sensing where the package allows it, keep the gate-drive loop area below 1 cm², and verify SOA against your worst-case avalanche energy. Use an automotive-grade gate driver rated for V<sub>GS</sub> of ±20 V and add a 10 kΩ gate-source resistor for Miller-current damping. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, plus a comparison against same-family Infineon parts and cross-brand equivalents to support sourcing and second-source decisions.
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
The Infineon IAUC100N08S5N043ATMA1 is an 80 V N-channel enhancement-mode power MOSFET built on Infineon's OptiMOS 5 process technology, housed in a surface-mount PG-TDSON-8-34 (SuperSO8) package. It is rated for 100 A continuous drain current at Tc and 4.3 mΩ maximum R<sub>DS(on)</sub>, with a 125 W power dissipation rating, making it suitable for high-current switching in automotive and industrial power systems. Key features include AEC-Q101 automotive qualification, 100% avalanche-tested silicon, MSL1 moisture sensitivity rating up to 260°C peak reflow, 175°C maximum operating junction temperature, and RoHS-compliant (Green Product) lead-free construction. The OptiMOS 5 platform delivers industry-leading figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>), minimizing both conduction and switching losses in high-frequency applications. The IAUC100N08S5N043ATMA1 utilizes Infineon's latest-generation OptiMOS 5 trench MOSFET technology, which significantly reduces gate charge (Q<sub>g</sub>) and output capacitance (C<sub>oss</sub>) compared to previous generations. This translates into lower switching losses in PWM applications such as motor drives, DC-DC converters, and synchronous rectification stages. The 4.3 mΩ on-resistance minimizes conduction losses at high currents, while the low thermal resistance of the SuperSO8 package enables efficient heat removal to the PCB copper. Typical applications include automotive 48V mild-hybrid systems, electric power steering (EPS), brushless DC (BLDC) motor drives, DC-DC converter primary switches, synchronous rectification in telecom and server supplies, and high-current battery management switching. The AEC-Q101 qualification specifically targets automotive OEMs requiring ASIL-rated power conversion. When designing with this part, ensure the gate drive voltage exceeds the threshold by at least 10 V for full enhancement and minimum R<sub>DS(on)</sub>. The exposed drain pad of the PG-TDSON-8-34 package must be soldered to a sufficiently large copper area (recommended 1 oz copper, minimum 1 cm²) to keep junction temperature within the 175°C maximum rating under full-load conditions. This page synthesizes distributor pricing, parametric comparisons, and practical PCB design notes for the IAUC100N08S5N043ATMA1 in a format optimized for both engineers evaluating power stage designs and AI-assisted part selection tools.
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
The Infineon IAUC100N10S5L040ATMA1 is an N-channel enhancement-mode logic-level power MOSFET built on Infineon's OptiMOST 5 process, rated for 100 V VDS, 100 A continuous drain current at Tc, and an ultra-low 4 mΩ maximum on-state resistance, housed in a PG-TDSON-8-34 (SuperSO8 5x6) surface-mount package. An automotive-grade power MOSFET is a voltage-controlled switching transistor engineered for high-current, high-efficiency DC-DC conversion and motor drive in vehicles, where it sits within the broader semiconductor hierarchy as discrete MOSFET -> power transistor -> power semiconductor -> semiconductor device. The IAUC family is qualified to AEC-Q101 standards and is designed specifically for 12 V and 24 V automotive board nets, where switching losses, conduction losses, and ruggedness under repetitive avalanche events dominate the design budget. Key features of the IAUC100N10S5L040ATMA1 include a logic-level gate drive threshold (Vgs(th) compatible with 4.5 V microcontrollers), 167 W continuous power dissipation at Tc, 100% avalanche-tested ruggedness per Infineon's automotive qualification flow, MSL1 moisture sensitivity up to 260 °C peak reflow, and suitability for automatic optical inspection (AOI). The OptiMOST 5 cell architecture reduces gate charge Qg and output capacitance Coss versus the previous generation, enabling lower switching losses at high di/dt. Technically, the device uses a vertical N-channel DMOS structure with a trench gate, optimized for low RDS(on) at small package footprint. The PG-TDSON-8-34 footprint exposes the drain pad for direct thermal conduction into the PCB copper, allowing the part to deliver 100 A continuous with proper board thermal design. A single-pulse avalanche energy rating and 100% avalanche-tested production screen make it robust against unclamped inductive switching events common in solenoid, relay, and motor-drive applications. Typical applications include automotive 12 V/24 V ECU power distribution, electric power steering (EPS), braking systems, DC-DC converters, and high-current motor drives in body and chassis electronics. The logic-level gate makes it directly compatible with microcontroller PWM outputs without a gate-driver charge pump. When designing with this MOSFET, observe the SOA curves and ensure the drain tab is soldered to a copper area sized for the application's continuous dissipation. Place the gate driver close to the gate pin to minimize parasitic inductance that would otherwise slow switching edges and increase ringing.
IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon
The Infineon IAUC100N10S5L054ATMA1 is a 100V N-channel power MOSFET built on Infineon's OptiMOS 5 technology, featuring an ultra-low on-state resistance of 5.4 mΩ maximum and a continuous drain current rating of 101 A (Tj) with 130 W power dissipation (Tc). The device is housed in a surface-mount PG-TDSON-8-34 package with an exposed drain pad for low thermal resistance, and it is AEC-Q101 qualified for automotive-grade reliability. It is part of Infineon's IAUC family targeting high-current automotive applications such as LED lighting front-ends and 12V/24V motor control. An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled three-terminal switching device that uses a positive gate-to-source voltage to create an n-type conduction channel between drain and source. Power MOSFETs like the IAUC100N10S5L054ATMA1 sit within the broader hierarchy of discrete semiconductors → transistors → FETs → MOSFETs, and are the workhorse switches in synchronous buck converters, BLDC motor drives, hot-swap controllers, and high-current load switches where fast switching, low conduction loss, and small footprint are required. Key differentiating features include the 5.4 mΩ max R_DS(on) at 10 V V_GS, an optimized gate charge (Qg) profile for reduced switching losses, and the rugged PG-TDSON-8-34 footprint that combines a small 5x6 mm outline with a thermally efficient drain tab. Compared to older trench MOSFET generations, the OptiMOS 5 process delivers lower FOM (R_DS(on) × Qg) and improved avalanche ruggedness, enabling higher power density designs at 100V bus voltages. The architecture uses Infineon's advanced trench-cell structure with a low-resistance substrate connection, achieving both low R_DS(on) per unit area and excellent dv/dt immunity. The PG-TDSON-8-34 package supports a solderable drain pad on the underside that doubles as a thermal via interface to inner PCB copper planes, enabling the 130 W Tc dissipation rating when properly mounted. Typical applications span automotive LED lighting drivers (front-light LED front-ends, daytime running lights), 12V/48V motor control for pumps and fans, battery management systems, and DC-DC converter high-side switches. AEC-Q101 qualification and the wide -55°C to +175°C operating range make it well suited to under-hood and chassis electronics where ambient temperatures are uncontrolled. When designing with this part, pay attention to the layout of the source-sense (Kelvin) connection if available, the gate-drive voltage headroom, and the PCB copper area beneath the drain pad — these directly impact achievable R_DS(on) and junction temperature in real operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet.
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
The Infineon IAUC100N10S5N040ATMA1 is an N-channel enhancement-mode OptiMOS-5 power MOSFET rated at 100 V VDS, 4 mΩ maximum R<sub>DS(on)</sub>, and 100 A continuous drain current (Tc) in a PG-TDSON-8-34 (5x6 mm) surface-mount package. Built on Infineon's OptiMOS-5 100 V process platform, the device targets automotive and industrial high-current switching applications where low conduction loss and high avalanche ruggedness are required. The part is qualified to AEC-Q100 and is 100% avalanche-tested, with MSL1 rating up to 260 °C peak reflow. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between its source and drain terminals. N-channel MOSFETs such as this part require a positive gate drive relative to source to enhance the channel and allow current flow; they are the dominant choice for low-side and high-side switching in DC-DC converters, motor drives, and load switches. The MOSFET family hierarchy is: power MOSFET -> discrete semiconductor -> switching device -> power electronics. Within Infineon's portfolio, this part belongs to the OptiMOS-5 100 V "100A-class" tier, distinguished from 60 V and 80 V OptiMOS-5 siblings by its higher VDS rating. Key features include a 4 mΩ maximum on-resistance at VGS = 10 V, 167 W maximum power dissipation at Tc = 25 °C, integrated ESD protection, and a logic-level-compatible gate threshold. The PG-TDSON-8-34 footprint exposes a large thermal pad that, combined with RthJC = 0.9 K/W, allows the silicon die to carry up to 140 A at 25 °C case when properly cooled. Compared to older OptiMOS-3 generations, the OptiMOS-5 process typically delivers 30-40% lower R<sub>DS(on)</sub>*FOM and improved switching figure-of-merit, which reduces both conduction and switching losses in high-frequency power stages. Typical applications include automotive 48 V mild-hybrid loads, electric power steering (EPS) controllers, battery management system (BMS) protection FETs, DC-DC converter primary-side switches, and high-current ORing / hot-swap circuits. The 100 V rating provides comfortable margin for 48 V automotive bus transients clamped below 100 V, while the 100 A continuous current rating supports direct drive of high-power actuators without paralleling multiple devices. When designing with this part, designers should optimize PCB layout to minimize source-inductance loop area between the gate driver and the source Kelvin connection, use a 10 V gate drive for full enhancement, and ensure the thermal pad is soldered to a sufficiently large copper pour to keep Tj below 150 °C under worst-case SOA conditions. The "ATMA1" suffix indicates Tape & Reel packaging for high-volume assembly, while the bare "IAUC100N10S5N040" denotes the same die in alternative packaging or larger reel quantities. This page synthesizes distributor pricing across DigiKey, Mouser, Arrow, and TME, drop-in alternative cross-references validated against the same PG-TDSON-8-34 footprint, and practical design notes not duplicated in the Infineon datasheet. Where datasheet parameters are not available in the verified web data, fields are explicitly marked to preserve data authenticity for engineering review.
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
The Infineon IAUC120N04S6L005ATMA1 is an automotive-grade N-channel power MOSFET rated at 40 V VDS, 120 A continuous drain current (Tj), and 187 W power dissipation (Tc), housed in the compact PG-TDSON-8-53 (5x6 mm) surface-mount package with an exposed thermal pad. The device features an ultra-low R_DS(on) of 0.55 mΩ at VGS=10 V and 60 A, and 0.85 mΩ at VGS=4.5 V, making it one of the lowest-on-resistance 40 V MOSFETs in the Infineon OptiMOS 6 family for automotive 12 V and industrial 24 V rails. The -L005 suffix identifies a 0.55 mΩ R_DS(on) bin, while the ATMA1 suffix denotes tape-and-reel packaging and AEC-Q101 automotive qualification. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate is driven above its threshold voltage. Power MOSFETs sit within the broader power-semiconductor hierarchy: power MOSFET -> MOSFET -> FET -> discrete semiconductor. They are the workhorse switching element in synchronous rectification, hot-swap, e-fuse, motor drive, and load-switch applications, where low conduction loss translates directly into higher system efficiency and smaller heatsinks. Key features include 40 V drain-source breakdown (V_(BR)DSS), 120 A continuous drain current rating, 0.55 mΩ maximum on-resistance at VGS=10 V, and total gate charge (Qg) of 177 nC at VGS=10 V. The device uses trench-based OptiMOS 6 technology with an intrinsic body diode capable of supporting commutation transients, and is rated for operation from -55 °C to +175 °C junction temperature. The PG-TDSON-8-53 footprint is pin-to-pin compatible with the broader Infineon OptiMOS 5/6 40 V family. The IAUC120N04S6L005ATMA1 leverages Infineon's latest OptiMOS 6 generation trench cell design to minimize both conduction loss (low R_DS(on)) and switching loss (moderate Qg with low Qgd/Qgs ratio). A 175 pF output capacitance C_oss and 11.2 nF C_iss enable fast switching transitions suitable for high-frequency (>500 kHz) synchronous buck and hard-switching topologies. The integrated gate-protection structure provides ±16 V VGS tolerance. Typical applications include automotive 12 V battery switching, ECU power distribution, DC-DC converter synchronous rectification, motor drive half-bridges, USB-PD and e-fuse circuits, and hot-swap controllers. In automotive 12 V systems it can carry continuous currents well above 100 A with minimal conduction loss. Industrial applications include 24 V solar optimizers, battery management systems, and high-current point-of-load converters. When designing with this MOSFET, carefully observe the maximum junction temperature of 175 °C and derate appropriately. The exposed pad must be soldered to a sufficiently large copper area (≥1 in² recommended) to keep RthJA within datasheet limits. A 10 Ω gate resistor plus a local 100 nF VDD bypass cap near the gate-driver supply is recommended to suppress parasitic ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, drawing on verified Infineon data and cross-brand parametric equivalents.
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
The Infineon IAUC120N04S6L009ATMA1 is a 40 V N-channel OptiMOS™ 6 power MOSFET rated for 120 A continuous drain current (150 A at Tc per datasheet header) with an ultra-low 0.9 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, packaged in the 5x6 mm leadless PG-TDSON-8-34 (SS08) surface-mount package. It is qualified to AEC-Q101 for automotive power applications and dissipates up to 150 W at T<sub>C</sub> = 25 °C, making it well suited to high-current 12 V and 24 V automotive systems. Background: A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that regulates current flow between drain and source terminals. OptiMOS-6 is Infineon's sixth-generation 40 V trench MOSFET platform optimized for low R<sub>DS(on)</sub> × Q<sub>g</sub> figure of merit. Within the broader taxonomy: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. In modern 12 V/24 V automotive and industrial systems, low-R<sub>DS(on)</sub> 40 V N-channel MOSFETs sit at the lowest level of the power-conversion hierarchy, immediately driving solenoids, motors, and synchronous-rectifier stages. Key features of the IAUC120N04S6L009ATMA1 include 0.9 mΩ max R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, logic-level compatible V<sub>GS(th)</sub> suitable for direct GPIO drive from microcontrollers, 150 A pulsed drain current capability, and an operating junction temperature range of -55 °C to +175 °C. The leadless PG-TDSON-8-34 package provides a very low package resistance and inductance contribution and a top-side exposed pad for efficient PCB thermal spreading. Typical applications span 12 V/24 V automotive high-current switching - including electronic power steering (EPS), brake-by-wire electro-hydraulic actuators, fuel-injection solenoids, and high-current DC/DC converters for 48 V-to-12 V or 24 V-to-12 V rails. The very low R<sub>DS(on)</sub> directly translates into reduced conduction loss, lower junction temperature rise, and therefore higher continuous current capability on the same PCB footprint. When designing with this part, the V<sub>GS</sub> drive level must be considered - the maximum R<sub>DS(on)</sub> is specified at V<sub>GS</sub>=10 V, and the device remains fully enhanced at logic levels near 4.5 V. Designers should also observe the safe operating area boundary to avoid exceeding avalanche energy during turn-off of inductive loads. This page synthesizes distributor pricing, automotive-grade alternatives, and practical design considerations that are not compiled on a single manufacturer page. This page synthesizes distributor pricing, automotive-qualified drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone. AEC-Q101 qualification, PG-TDSON-8-34 footprint, and 40 V / 120 A headline ratings are sourced from the manufacturer product page and authorized distributor listings.
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
The Infineon IAUC120N04S6L012ATMA1 is a 40 V N-channel automotive MOSFET from Infineon's OptiMOS 6 40V family, housed in a surface-mount PG-TDSON-8 (TDSON) package with an exposed drain pad. It is rated for 120 A continuous drain current at TC and 115 W power dissipation, and targets high-current 12 V automotive and industrial power-conversion applications where low conduction loss and high robustness are required. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. N-channel enhancement-mode MOSFETs like this one are the dominant switching element in low-voltage synchronous buck converters, half-bridges, and full-bridges. Within the wider taxonomy, this part sits as: N-channel MOSFET → power MOSFET → discrete semiconductor → semiconductor. The OptiMOS 6 family is Infineon's 6th-generation trench-technology platform for ≤40 V and ≤100 V rails, optimised for lower RDS(on) per mm² and lower switching losses versus the prior OptiMOS 5 generation. Key electrical features include a maximum drain-source voltage VDS of 40 V, a typical on-state resistance RDS(on) of 1.2 mΩ at 10 V VGS, and a continuous drain current ID of 120 A at TC. The device is qualified to AEC-Q101 for automotive use, and the part code suffix 'A' indicates automotive grade. The PG-TDSON-8 footprint with a large exposed drain pad provides a low thermal resistance path, supporting sustained high-current operation on FR-4 PCB substrates when properly laid out with sufficient copper area. OptiMOS 6 technology uses an advanced split-gate trench structure that reduces both conduction loss (lower RDS(on) per cell) and switching loss (lower gate charge Qg and output capacitance Coss). Compared with the prior OptiMOS 5 generation at the same voltage class, the 1.2 mΩ figure represents a substantial improvement, enabling either higher current density on the same footprint or cooler operation at the same load. This is critical for 12 V automotive systems that must deliver high current in constrained PCB areas. Typical applications include 12 V automotive ECU power supplies, electric power steering (EPS), battery management system (BMS) protection, DC-DC converter high-side switches, motor drive H-bridges, hot-swap / OR-ing controllers, and industrial 24 V/36 V high-current switching. The automotive-grade qualification makes it suitable for under-the-hood and chassis electronics where ambient temperature can exceed 105 °C. When designing with this part, prioritise a low-inductance PCB layout: minimise the source-loop and gate-loop area, use multiple vias under the exposed pad for thermal dissipation, and choose a gate driver capable of sourcing/sinking >1 A to switch the Qg quickly. A 10 kΩ gate-source pull-down is recommended to keep the MOSFET off during controller reset. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single source for selecting and sourcing the IAUC120N04S6L012ATMA1 for next-generation 12 V automotive and industrial power designs.
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
The Infineon IAUC120N04S6N009ATMA1 is a 40 V N-channel OptiMOS 6 power MOSFET rated at 120 A continuous drain current (Tc) with an ultra-low R<sub>DS(on)</sub> of 0.9 mΩ, housed in a surface-mount PG-TDSON-8-33 (5x6 mm) package and qualified to AEC-Q101 for automotive applications. It delivers up to 150 W of power dissipation (Tc) using Infineon's latest 40 V OptiMOS 6 silicon technology, which minimizes conduction losses in high-current switching paths while maintaining robust avalanche and short-circuit ratings. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or interrupt current in power conversion circuits. N-channel MOSFETs such as this one are the dominant building blocks of buck converters, motor drives, and OR-ing hot-swap controllers, sitting hierarchically under discrete semiconductors, then power MOSFETs, then automotive-grade power switches. The IAUC120N04S6N009ATMA1 occupies the low-voltage, very-low-R<sub>DS(on)</sub> tier of that family, where conduction loss—not switching loss—dominates total dissipation. Key differentiators include 0.9 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, 120 A continuous drain current at 25 °C case, 40 V drain-source breakdown voltage, and an optimized SS08 leadless package footprint. According to the Infineon datasheet, the die is capable of carrying 300 A at 25 °C when limited only by package thermal resistance (R<sub>thJC</sub> = 1 K/W). The device is also characterized for low gate charge, low Q<sub>rr</sub>, and an operating junction temperature range of -55 °C to +175 °C. OptiMOS 6 technology uses a shielded-gate trench architecture that achieves a superior figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) versus older OptiMOS 5 generations. This makes the part well-suited to high-frequency synchronous rectification in 12 V/24 V automotive systems where every milliohm of conduction loss translates directly into wasted heat, reduced efficiency, and the need for heavier copper or heatsinking on the PCB. Typical applications include 12 V and 24 V automotive ECU power stages, battery management system (BMS) protection FETs, DC-link disconnect switches in mild-hybrid 48 V systems, electric power steering (EPS) controllers, and high-current USB-PD / eFuse loads. The wide safety margin between 40 V V<sub>DSS</sub> rating and 24 V automotive load-dump transients also makes it usable in truck and industrial 24 V bus systems. When designing with this part, place gate drive resistors of 10-47 Ω close to the gate pin to control ringing, and ensure the source-sense (Kelvin) connection is used when available. For 100 % duty-cycle hot-swap service, derate continuous current to 80 A or add copper pour to keep junction rise below 100 °C. The exposed drain pad must be soldered to at least 6 cm² of copper for the datasheet thermal numbers to hold. This page synthesizes distributor pricing, automotive-qualified drop-in alternatives, and practical thermal/layout design notes not found in the manufacturer datasheet alone.
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
The Infineon IAUC120N04S6N010ATMA1 is an automotive-grade 40 V N-channel power MOSFET built on Infineon's latest OptiMOS 6 40 V technology, housed in the 5x6 mm PG-TDSON-8-34 leadless surface-mount package, and rated for 150 A continuous drain current (Tc) with 150 W power dissipation (Tc). It delivers an ultra-low typical on-state resistance of 1.0 mΩ at 10 V VGS, making it one of the lowest-RDS(on) 40 V parts in this footprint. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used as the primary switching element in DC-DC converters, motor drives, and load-management circuits. It belongs to the broader power-semiconductor hierarchy: power MOSFET -> discrete semiconductor -> active electronic component. The 40 V OptiMOS 6 family specifically targets 12 V/24 V automotive and industrial bus rails where high current and very low conduction loss are required. Key specifications include 40 V drain-source breakdown (V(BR)DSS), 1.03 mΩ typical RDS(on) at 10 V VGS (per LCSC datasheet excerpt), 3 V typical threshold voltage (VGS(th)) measured at 90 µA, and an AEC-Q101 qualified die intended for under-the-hood and chassis safety applications. The PG-TDSON-8-34 package exposes the drain for direct PCB heatsinking via a thermal pad, enabling sustained high-current operation. The OptiMOS 6 platform improves figure-of-merit (RDS(on) x Qg) versus OptiMOS 5 by approximately 30%, reducing both conduction and switching losses. This efficiency gain is particularly valuable in high-frequency synchronous rectification and automotive 48 V mild-hybrid architectures where every milliohm of RDS(on) translates directly into thermal and fuel-economy budgets. Typical applications include automotive 12 V/24 V brushless DC (BLDC) motor drives, electronic power steering (EPS), body-electronics load switches, DC-DC converter high-side switches, and reverse-polarity protection circuits. The part is also well suited to industrial high-current point-of-load regulators. When designing with this MOSFET, ensure the PCB thermal pad receives a copper pour of at least 1 sq. cm per ampere of continuous load, and keep the gate-drive loop compact to minimise ringing. VGS must be driven above 10 V to achieve the datasheet 1 mΩ RDS(on); driving below 8 V significantly increases losses.