MOSFET
제품 (1294)
FC6B21150L - Dual N-Ch MOSFET, 12V, 8A, Li-Ion Protection | Panasonic
The Panasonic FC6B21150L is a dual N-channel MOSFET with integrated gate resistor, housed in a 6-pin CSP (Chip Scale Package) measuring 2.14 x 1.67 mm. It is rated for VDS of 12V and supports continuous drain current of 8A per channel, making it an optimal switch for lithium-ion battery protection circuits in compact portable devices. What is a MOSFET in a battery protection circuit? A MOSFET used in lithium-ion battery protection is an N-channel power switch that interrupts charge and discharge paths when the protection IC detects over-voltage, under-voltage, over-current, or short-circuit conditions. These protection MOSFETs must have very low on-resistance (Rss(on)) to minimize conduction loss and heat generation during normal operation, while their VDS rating must comfortably exceed the maximum pack voltage. Key specifications include Rss(on) typical of 4.0 mΩ at VGS = 4.5V, 4.3 mΩ at VGS = 3.8V, and a CSP chip size package with RoHS compliance. The integrated gate resistor simplifies PCB design by eliminating the need for external gate resistors that control switching transients and ringing. The device is qualified to MSL Level 1 and is well-suited for 1-cell Li-ion protection modules. The FC6B21150L uses Panasonic's proprietary chip-scale packaging that minimizes both footprint and parasitic inductance, which is critical for fast-switching protection events. The symmetrical dual-channel configuration allows independent or paralleled operation for either charge (high-side) and discharge (low-side) FET functions, or for bidirectional protection in 2-terminal battery packs. Typical applications include 1-cell Li-ion/Li-polymer battery protection ICs, power banks, wearable electronics, TWS earbud charging cases, and compact IoT devices requiring single-cell Li-ion protection. It is also used in BMS front-end stages where PCB real estate is constrained. When designing with this MOSFET, ensure that the protection FET Rss(on) is balanced with the trip current setting of the protection IC to avoid false triggering during pulse loads. Layout should keep source-sense traces short to minimize parasitic loop inductance that can cause VDS overshoot during abrupt disconnect events. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
FDA803S-6DY - 3A, 40V Automotive Grade MOSFET | onsemi
The FDA803S-6DY is an automotive-grade N-channel power MOSFET from onsemi, designed for high-efficiency power switching in automotive and industrial applications. It features a drain-to-source voltage (VDS) of 40V and a continuous drain current (ID) of 3A, making it suitable for load switching, DC-DC converters, and motor control circuits. The device is housed in a compact SO-8 package, offering a small footprint for space-constrained PCB designs. A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power management systems, serving as switches in DC-DC converters, load switches, and motor drivers. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the FDA803S-6DY include a low on-state resistance (RDS(on)) of [DATA_NEEDED: RDS(on)] at 10V gate drive, ensuring minimal conduction losses. The device supports a gate threshold voltage (VGS(th)) of [DATA_NEEDED: VGS(th)], and a maximum power dissipation of [DATA_NEEDED: Power Dissipation]. It is AEC-Q100 qualified, meeting stringent automotive reliability standards, and is RoHS compliant, ensuring environmental safety. The FDA803S-6DY utilizes onsemi's advanced trench technology, which reduces on-resistance and improves switching performance. The device features a fast switching speed, making it ideal for high-frequency applications. Its robust thermal performance, with a junction-to-ambient thermal resistance of [DATA_NEEDED: Thermal Resistance], allows for efficient heat dissipation in demanding environments. Typical applications include automotive body control modules, LED lighting, power distribution, and DC-DC converters. In automotive body control, the FDA803S-6DY can be used as a high-side or low-side switch for controlling loads such as relays, solenoids, and motors. Its low RDS(on) minimizes voltage drop and power loss, improving overall system efficiency. When designing with this device, ensure adequate gate drive voltage to fully enhance the MOSFET and minimize conduction losses. Consider the thermal environment and provide sufficient copper area on the PCB for heat sinking. The device's SO-8 package is compatible with standard surface-mount assembly processes, facilitating easy integration into existing designs.
FDC658AP-G - 30V P-Ch MOSFET, 50mΩ, SuperSOT-6 | onsemi
The onsemi FDC658AP-G is a P-Channel 30V 4A logic-level PowerTrench MOSFET in a SuperSOT-6 (TSOT-23-6) surface-mount package, produced using onsemi's advanced POWERTRENCH process and optimized for battery power management applications. The device is rated for VDS of -30V, continuous drain current of -4A (Ta), pulsed drain current of -10A, and a maximum static drain-source on-resistance (RDS(on)) of 50 mΩ at VGS = -10V, with a low threshold voltage suitable for direct logic-level drive from 1.8V / 3.3V / 5V GPIOs. A P-Channel MOSFET is a field-effect transistor whose majority carriers are holes (positive charges); because the channel conducts when the gate is pulled below the source, P-Channel parts simplify high-side load switching in negative-rail systems because the load is connected to ground and the MOSFET sits on the high side, eliminating the need for a charge pump in many low-current battery designs. Within the broader taxonomy, the FDC658AP-G sits as: P-Channel MOSFET -> small-signal MOSFET -> discrete MOSFET -> discrete semiconductor -> semiconductor device, with PowerTrench referring to a proprietary trench-gate cell architecture that minimizes RDS(on) per unit area while keeping gate charge low for fast switching edges. Key features include a logic-level VGS(th) of typically -1.9V maximum, gate charge (Qg) on the order of a few nC, fast switching, and low input capacitance. The SuperSOT-6 (TSOT-23-6) package provides a compact 2.9mm × 1.6mm footprint with a thermal pad that reduces junction-to-ambient thermal resistance to roughly 78°C/W on a 1 oz copper JEDEC test board. The -G suffix indicates a Pb-free / RoHS-compliant terminal finish suitable for lead-free reflow at 260°C peak per IPC/JEDEC J-STD-020. Typical applications include load switching and power management in portable battery-powered devices (notebooks, tablets, smartphones), battery protection circuits, high-side OR-ing, dc-dc converters as synchronous rectifier complements, and power-muxing between adapters and batteries. The wide safety margins on VDS and the logic-level gate make it a versatile building block for hot-swap, USB load switch, and reverse-battery protection blocks. Designers should observe the SOA boundary at high pulse currents and consider pulsed current de-rating at elevated temperatures. Because P-Channel VGS(th) becomes less negative with rising junction temperature, the device can self-enhance on a hot PCB; verify cold-start behavior at the minimum expected battery voltage. The SuperSOT-6 thermal pad must be soldered to a copper pour to meet the rated continuous drain current, and a gate series resistor of 10-100Ω is recommended to control ringing.
FDD8424H - 40V Dual N&P-Ch PowerTrench MOSFET | onsemi
The onsemi FDD8424H is a dual N-channel and P-channel enhancement-mode PowerTrench MOSFET housed in a TO-252 (DPAK) surface-mount package, integrating both a 40 V N-channel and a -40 V P-channel die on a single substrate. The N-channel section is rated for 40 V VDS, 20 A continuous drain current, and 24 mΩ maximum RDS(on) at VGS = 10 V, while the P-channel section is rated for -40 V VDS, -20 A, and 54 mΩ RDS(on) at VGS = -10 V. Total power dissipation is 1.3 W at 25°C ambient on the FR-4 test board specified in the onsemi datasheet. What is a dual PowerTrench MOSFET? A PowerTrench MOSFET is an N-channel or P-channel enhancement-mode power MOSFET built on a trench-gate process that creates an undercut-effect channel under the gate oxide to lower on-state resistance. Dual PowerTrench MOSFETs integrate two dice - one N-channel and one P-channel - in one package, belonging to the power MOSFET family which itself is a sub-category of discrete semiconductors used in power conversion. Combining both polarities in a single DPAK footprint saves PCB area, simplifies gate drive routing, and is common in half-bridge and synchronous-rectifier topologies. Key features include a 20 nC typical gate charge on the N-channel die at VGS = 10 V, a maximum gate threshold of 2.5 V (typical 1.8 V), and operation from a VGS range of ±20 V. The advanced PowerTrench process minimizes on-state resistance while maintaining superior switching performance, making the part well suited to high-frequency DC-DC converter and motor-driver half-stages. The FDD8424H is built on an advanced PowerTrench process that minimizes on-state resistance per unit silicon area while keeping gate charge and switching losses low. The two dice share a common drain-tap on the DPAK tab, which simplifies PCB layout in half-bridge and synchronous-rectifier applications. According to the onsemi datasheet, the N-channel's figure of merit (RDS(on) × Qg) is balanced for high-frequency buck converter low-side switch operation. Typical applications include synchronous buck converter low-side switches, DC motor H-bridge half-bridges, battery protection and load switching, and power-OR-ing circuits. The 40 V rating on both dice makes the FDD8424H well matched to 12 V automotive, 19 V adapter, and 24 V industrial rails where both high-side and low-side switching occur within the same half-bridge. When designing with this device, calculate junction temperature using θJA of 50 °C/W on the JEDEC 1-square-inch test board and ensure the tab copper area exceeds the minimum footprint. The P-channel die shares the same drain tab as the N-channel, which simplifies thermal vias but constrains high-current ground-return routing. This page synthesizes distributor pricing, drop-in alternatives, and practical half-bridge design notes not collected in the manufacturer datasheet, supporting cross-referencing with FDD8424H_F085A, FDD8424HF085A, and equivalent DPAK parts.
FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi
The onsemi FDD8880 is a 30 V N-channel PowerTrench MOSFET rated for 58 A continuous drain current (at case temperature) with a maximum on-resistance of 9 mOhm, housed in a surface-mount TO-252AA (DPAK) package. It is currently in Last Shipments status, so new designs should plan for the alternatives listed on this page. A power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in circuits. Within the power-management hierarchy, discrete MOSFETs sit alongside integrated drivers and controllers, and the DPAK (TO-252AA) package family is one of the most widely used surface-mount power packages, providing a large exposed tab that solders directly to the PCB copper for heat spreading. The FDD8880 was specifically designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Its key differentiators are low gate charge, low rDS(on), and fast switching speed - three parameters that together minimize conduction and switching losses in high-frequency power conversion. Architecturally, the PowerTrench process uses a low charge, low resistance trench structure that reduces gate charge without sacrificing on-resistance. This makes the device well suited to high-frequency synchronous rectification, where total gate charge directly drives driver losses and switching speed affects transition losses. Typical applications include synchronous buck converters in point-of-load power supplies, DC/DC converter modules, and high-current load switches where a 30 V breakdown rating provides margin for 12 V rails and transient events. Design consideration: with 9 mOhm on-resistance, conduction losses at high current are significant (Estimated: I^2 x R gives ~0.34 W at 6.2 A, rising quadratically), so thermal design of the PCB copper area under the tab is critical. This page synthesizes distributor data, lifecycle status, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet.
FDD8896 - 30V 94A N-Ch PowerTrench MOSFET | onsemi/Fairchild
The onsemi (Fairchild Semiconductor) FDD8896 is an N-Channel PowerTrench MOSFET rated 30 V drain-source voltage, 94 A continuous drain current at case temperature (17 A at ambient), 5.7 mOhm maximum on-resistance, and 80 W power dissipation at Tc, housed in a 3-pin TO-252 (DPAK) surface-mount package. A PowerTrench MOSFET is a trench-gate power transistor that belongs to the broader hierarchy of MOSFETs, discrete semiconductors, and power management components. Its vertical trench structure delivers very low on-resistance per unit die area and low gate charge, making it the workhorse switch element in modern power conversion stages where conduction losses and switching losses must both be minimized. Key features include the 5.7 mOhm rDS(ON) at 10 V gate drive, which minimizes I2R conduction loss; optimized low gate charge, which reduces driver loss and enables faster switching transitions; and the rugged TO-252 (DPAK) package that combines a small PCB footprint with the exposed drain tab for efficient heat spreading into the copper pour. Technically, the FDD8896 was designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. In synchronous buck converters it is typically used as the low-side (sync) FET, where its low rDS(ON) dominates efficiency; it can also serve as the high-side switch in lower-duty-cycle rails. Typical applications include synchronous buck DC/DC converters for computer motherboards and point-of-load supplies, motor drive switching stages, and battery-powered systems requiring a low-loss 30 V-rated switch. Design consideration: at high current the DPAK relies on PCB copper for cooling; maximize drain-tab copper area and verify junction temperature with real thermal measurements. This page adds distributor sourcing data, pin-compatible alternatives, and practical design notes beyond what the manufacturer datasheet provides.
FDD8896-F085 - 30V 94A N-Channel PowerTrench MOSFET | onsemi
The onsemi FDD8896-F085 is a 30 V, 94 A N-Channel PowerTrench MOSFET optimized for high-efficiency DC/DC converters using synchronous or conventional switching PWM controllers. It is offered in a TO-252 (DPAK) surface-mount package with 5.7 mOhm maximum Rds(on) at Vgs = 10 V and a continuous drain current rating of 94 A at Tc = 25 C, plus 17 A at Ta = 25 C. The device is specifically engineered to deliver low gate charge and fast switching speed, reducing switching losses and improving overall converter efficiency. What is a PowerTrench MOSFET? A PowerTrench MOSFET is an N-channel power MOSFET built on a proprietary trench-gate process that creates a vertical channel under each cell, dramatically lowering on-state resistance per unit silicon area versus older planar DMOS structures. It belongs to the broader MOSFET hierarchy (MOSFET -> power MOSFET -> discrete semiconductor), and in modern SMPS topologies it acts as the synchronous-rectifier or main switch on the low-voltage side. The combination of low Rds(on), low Qg, and high current density makes it ideal for compact point-of-load and POL regulators. Key features of the FDD8896-F085 include 30 V Vdss, 5.7 mOhm Rds(on) at Vgs = 10 V, 94 A continuous drain current at 25 C case temperature, 80 W maximum power dissipation at Tc = 25 C, and an avalanche-rated body diode. The device is also characterized for low gate charge and fast switching, which enables high-frequency operation and reduced driver losses. It is qualified to AEC-Q101 for automotive reliability, and is available in a Halogen-free, lead-free DPAK surface-mount package. Typical applications include synchronous rectification in DC/DC converters, low-side switching in buck regulators, motor control and battery protection, hot-swap and OR-ing switches, and primary-side switching in isolated POL modules. The 30 V drain-source rating gives comfortable headroom for 12 V bus rails and 19 V adapter-fed systems, while the 5.7 mOhm on-resistance keeps conduction loss low at high currents. When designing with this part, calculate conduction loss as P = I_d^2 x Rds(on) and ensure that the resulting junction temperature stays below 150 C under worst-case ambient and cooling conditions. A small gate-drive resistor (typically 4.7 to 10 ohm) is recommended to control ringing and limit dV/dt-induced turn-on. For thermal reliability, mount the DPAK tab onto at least 1 sq inch of copper. This page synthesizes distributor pricing, AEC-Q101 automotive qualification details, drop-in TO-252 alternatives, and practical PCB-layout guidance that is not consolidated in the manufacturer datasheet alone. Engineers searching for a 30 V synchronous-rectifier MOSFET in DPAK will find the parametrics, cross-reference list, and SOA guidance needed for design-in and second-source decisions.
FDG6332C - 20V N&P-Channel PowerTrench MOSFET | onsemi SC-88
The onsemi FDG6332C is a dual N- and P-channel MOSFET array in a 6-pin SC-88 (SC-70-6) surface-mount package, built on onsemi's advanced PowerTrench process to minimize on-state resistance while preserving fast switching performance. The N-channel device is rated 20 V VDS with 700 mA continuous drain current, and the P-channel device shares the same 20 V rating with 600 mA continuous drain current. Total package power dissipation is rated 300 mW with junction-to-ambient thermal resistance of 415 °C/W on a JEDEC still-air PCB, meaning the array must be evaluated against PCB copper area for thermal derating. A MOSFET array is an integrated semiconductor device that places two or more discrete MOSFETs in a single chip-scale package, allowing complementary switching (high-side plus low-side, or N+P fetches in a half-bridge) without the board area of two separate SOT-23 or SOT-363 parts. MOSFET arrays occupy a place in the hierarchy: power MOSFET, power semiconductor, discrete semiconductor, and ultimately integrated circuit packaging. They are commonly used in load switching, level shifting, and DC-DC converter synchronous stages where board real estate is at a premium. Key differentiating features of the FDG6332C include its monolithic dual-channel topology, ultra-small SC-88 outline (approximately 2.0 × 2.1 mm), 20 V VDS rating suitable for 5 V and 12 V buses, low RDS(on) for both polarities via PowerTrench cell design, and a logic-level gate threshold compatible with 1.8 V and 3.3 V microcontrollers. The complementary N+P channel arrangement allows a single part to perform synchronous-rectifier, inverter, or H-bridge functions in miniature footprints. Architecturally, the FDG6332C uses a trench-gate structure that maximizes channel density per unit silicon area, reducing both on-resistance and gate charge. The N-channel and P-channel dies are independently bonded out to separate source pins, eliminating the need to parallel discrete parts and reducing parasitic source inductance that would otherwise degrade switching edge rates. Typical applications include portable and battery-powered load switching (USB VBUS switches, lithium-ion protection circuits, OLED display drivers), low-voltage DC-DC synchronous buck converters in consumer and IoT devices, signal-level shifters between MCUs and higher-voltage loads, and small motor or relay drivers in white goods and personal electronics. When designing with the FDG6332C, pay attention to gate-drive headroom and to PCB thermal copper area: 415 °C/W RθJA means continuous 300 mW is only attainable with substantial copper pours or with pulsed operation where average power remains low. Verify that the chosen gate drive can fully enhance both channels at the intended VGS. This page synthesizes distributor pricing, package-matched equivalents, thermal estimates, and design notes that supplement the manufacturer datasheet.
FDG6332C-F085 - 20V N&P Chan MOSFET Array | onsemi | SC-70-6
The onsemi FDG6332C-F085 is a 20V N-channel and P-channel complementary PowerTrench MOSFET array rated at 700 mA (N-FET) and 600 mA (P-FET) continuous drain current, housed in a 6-pin SC-88/SC-70-6 (SOT-363) surface-mount package. The dual-FET die integrates one N-channel and one P-channel MOSFET in a tiny footprint optimized for portable load-switching and small-signal power management. A PowerTrench MOSFET is a small-signal MOSFET fabricated with a trench-gate process that increases cell density and reduces on-state resistance (RDS(on)) per unit silicon area. In a complementary N+P pair such as the FDG6332C-F085, designers use the N-channel device for high-side or low-side switching of positive rails and the P-channel device for high-side reverse-polarity or load-disconnect switching of the same rail - functions that together cover virtually every discrete switching need in a portable battery-powered system. MOSFET arrays are classified under small-signal discrets, a sub-family of discrete semiconductors that also includes single MOSFETs, IGBTs, and protection devices. Key features of the FDG6332C-F085 include a 20V VDS rating that comfortably covers 1-cell Li-ion (4.2V max), 3.3V and 5V rails, and 12V bus transients; low RDS(on) values typical for the PowerTrench family at VGS = 4.5V and 2.5V; fast switching speeds thanks to low gate charge; and a 300 mW power dissipation rating in the SC-70-6 package. The -F085 suffix denotes the automotive AEC-Q100 qualified grade, screened for higher reliability than the standard commercial FDG6332C. Internally, both FETs share a common drain-substrate layout that allows the package to fit two independent devices in a 2.0 x 1.25 mm body. The P-channel transistor typically has higher RDS(on) than the N-channel at the same VGS - this asymmetry is normal and is one of the reasons complementary pairs are co-designed. Designers selecting this part should bias the gates with logic-level (1.8V/2.5V/3.3V) drive signals rather than higher voltages to stay within the VGS(max) envelope and to minimize conduction losses. Typical applications include portable/battery-powered load switching, USB power switching, Li-ion charger reverse-polarity protection, signal gating, motor-driver direction control, and small-signal DC-DC converters. The AEC-Q100 qualification also makes the -F085 grade suitable for automotive body-electronics modules, infotainment peripherals, and other in-cabin circuits that demand automotive-grade reliability. When designing with this array, keep gate-drive traces short to limit ringing, and place gate-source pull-down resistors (typically 100 kohm to 1 Mohm) on both FETs to ensure a known off-state when the controller is in reset. The SC-70-6 footprint requires careful paste-stencil aperture design to avoid solder bridging on the closely spaced leads - a 4-mil stencil with aperture reduction on inner pads is a common best practice. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the onsemi datasheet alone, giving you the parametric data needed to choose the FDG6332C-F085 for portable, automotive, or industrial switching tasks.
FDMC510P - 20V P-Channel PowerTrench MOSFET | onsemi
The onsemi FDMC510P is a P-Channel PowerTrench MOSFET rated at -20 V VDS and -18 A continuous drain current (ID), with a maximum on-resistance of 8.0 mΩ at VGS = -10 V, housed in an 8-MLP (3.3 x 3.3 mm) Power33 surface-mount package. Designed using onsemi's advanced POWERTRENCH process, the FDMC510P is optimized for low rDS(on), fast switching, and ruggedness in space-constrained designs. The device is rated for 2.3 W power dissipation at TA = 25 °C and 41 W at TC = 25 °C, making it suitable for both PCB-area-limited and thermally-poured layouts. A P-Channel MOSFET (PMOS) is a type of field-effect transistor where the channel is formed by p-type semiconductor material and conducts current when a negative gate-source voltage (VGS) is applied. In the power management taxonomy, PMOS belongs to MOSFET -> discrete semiconductor -> power switch. P-Channel devices are commonly used as high-side switches because their source connects to the load supply, enabling simple gate-drive to ground via a low-voltage control signal. This architecture eliminates the bootstrap circuitry often required by N-Channel high-side switches, simplifying designs in battery and load-management applications. Key features of the FDMC510P include 8.0 mΩ typical rDS(on) at -10 V VGS, low gate charge for fast switching, integrated ESD protection, and a logic-level-friendly gate threshold that is compatible with 1.8 V to 5 V GPIO drive. The MLP-8 (3.3 x 3.3) Power33 package offers an exposed pad that significantly reduces thermal resistance (RθJA), enabling the 41 W TC rating while occupying only 10.89 mm² of board area. Compared to older DPAK or SO-8 footprints, the FDMC510P delivers a smaller, thinner profile suitable for portable and space-constrained electronics. Technically, the FDMC510P uses a trench-gate structure that increases cell density and reduces on-resistance per unit area. The P-Channel polarity simplifies high-side switching in battery-powered systems because the source sits at the battery voltage and the load connects to ground via the drain, allowing the gate to be driven by a low-voltage logic signal referenced to ground. This eliminates the charge pump or bootstrap needed for N-Channel high-side switches, saving board space and reducing quiescent current. Typical applications include battery protection circuits, load switches in portable devices, power-rail OR-ing, USB power switching, and DC-DC converters. The -20 V rating provides sufficient headroom for 12 V systems while maintaining low conduction loss at 5 V and below. When designing with the FDMC510P, ensure the gate-source voltage never exceeds the ±20 V absolute maximum and that the exposed pad receives a continuous copper pour to achieve the rated thermal performance. For high-frequency switching, a small gate-source resistor (10-100 Ω) helps dampen parasitic ringing without significantly slowing turn-on. This page synthesizes distributor pricing, verified drop-in alternatives, and practical PCB thermal guidance not aggregated on a single manufacturer page, giving engineers a faster sourcing and design decision.
FDMC8882 - 30V, 16A N-Ch PowerTrench MOSFET | onsemi
The onsemi FDMC8882 is a 30 V, 16 A N-channel PowerTrench power MOSFET with a maximum on-state resistance of 14.3 mOhm, housed in a compact 8 x 8 mm MLP (PQFN) surface-mount package. Originally introduced by Fairchild Semiconductor and now manufactured by onsemi, it targets power management and load-switching duties where low conduction loss in a small footprint is essential. A power MOSFET is a voltage-controlled semiconductor switch used in the power stage of virtually every electronic system, sitting within the hierarchy of discrete power semiconductors alongside diodes and IGBTs. In portable designs, the MOSFET is typically the last switching or load-isolation element between a battery pack and the load, so its RDS(on), gate charge and package thermal resistance directly determine efficiency and battery runtime. Key features of the FDMC8882 include its advanced PowerTrench process, which is especially tailored to minimize on-state resistance; a 14.3 mOhm maximum RDS(on) that reduces conduction losses at high load currents; a 30 V drain-source rating suited to single- and multi-cell lithium-ion battery stacks; and a 16 A continuous drain current capability. The large exposed drain pad of the MLP package provides a low thermal path to the PCB, allowing heat generated during switching and conduction to spread into copper planes without a heatsink. Technically, the PowerTrench trench-gate structure optimizes the trade-off between specific on-resistance and gate charge, giving superior figure-of-merit performance compared with older planar devices in the same voltage class. This makes the part effective both as a low-frequency load switch, where conduction loss dominates, and as a switching element in moderate-frequency DC-DC conversion stages where gate-charge-related losses matter. Typical applications include load switching and battery isolation in notebook computers, power-path and protection switches in portable battery packs, and power management rails in consumer and industrial equipment. The 30 V rating provides comfortable headroom for 11.1 V and 14.8 V Li-ion packs plus transients. Design consideration: PCB layout dominates real-world performance - maximize copper area under the exposed drain and source pads, since the package thermal resistance and current rating assume an adequately cooled board. Estimated junction temperature rise must always be checked against the 150 C maximum at the actual load profile. This page synthesizes distributor pricing, cross-reference data, and drop-in alternative analysis not found in the manufacturer datasheet alone.
FDMC89521L - Dual N-Channel 60V 8.2A MOSFET | onsemi
The onsemi FDMC89521L is a dual N-channel MOSFET array rated 60 V and 8.2 A, housed in an 8-Power33 (3 mm × 3 mm MLP) surface-mount package with enhanced thermal performance. Each MOSFET exhibits a low 17 mΩ Rds(on) at Vgs = 10 V, enabling high-efficiency switching in synchronous buck, load-switching, and battery-protection topologies. Two FETs in one footprint reduce PCB area and parasitic loop inductance compared with discrete pairs. A dual MOSFET is a semiconductor device that integrates two transistors in a single package, commonly used to build complementary or synchronous switching stages. MOSFET arrays belong to the discrete semiconductor family, branching into power MOSFETs and, more specifically, trench-gate N-channel devices. Within a synchronous buck converter the low-side and high-side FETs sit next to each other on the PCB; a dual-packaged part halves the gate-drive loop and slashes the input-capacitor ripple current. Compared with two single SO-8 MOSFETs, an MLP-8 dual cut PCB area roughly in half and improves thermal spreading. Key features include 60 V drain-source breakdown, 8.2 A continuous drain current at TA = 25 °C, 17 mΩ Rds(on) at Vgs = 10 V, low gate charge for fast switching, an integrated drain-to-source body diode for inductive commutation, and 1.9 W / 16 W power dissipation ratings at TA = 25 °C and TC = 25 °C respectively. The Power33 package exposes a large metal pad that pulls heat directly into the PCB copper pour. The FDMC89521L uses onsemi's POWERTRENCH process, a shielded-gate trench technology that reduces on-resistance per unit area while minimizing Miller capacitance. The 17 mΩ Rds(on) is achieved at a relatively low gate charge, allowing the part to switch efficiently at 500 kHz to 1 MHz node-switching frequencies typical of point-of-load converters. The dual-die layout is symmetric so the two FETs share electrical and thermal characteristics, simplifying dual-channel driver designs. Typical applications include synchronous buck DC-DC converters in telecom and networking equipment, motor-driver H-bridges for small BLDC motors, battery-management load switching, USB Type-C / PD power-path OR-ing, and point-of-load voltage regulator modules. The dual-FET configuration makes it especially useful in any topology where two MOSFETs are mounted next to each other on the same switching node. When designing with this device, ensure the gate-drive voltage is at least 10 V for full Rds(on) performance. A 4.5 V drive is supported for low-voltage logic-level use but on-resistance roughly doubles. Pay attention to the exposed pad (Pin 1 / EP) - it MUST be soldered to a copper pour of at least 1 sq. inch to achieve the rated 1.9 W TA dissipation.
FDN337N - 30V 2.2A N-Channel MOSFET SOT-23 | onsemi
The onsemi FDN337N is an N-channel logic-level enhancement-mode power MOSFET rated for 30 V drain-source voltage and 2.2 A continuous drain current (at 25 C ambient), packaged in the compact surface-mount SOT-23 (SuperSOT-3) outline with 500 mW power dissipation at Ta. A power MOSFET is a voltage-controlled semiconductor switch used throughout power management hierarchies - from low-side load switches and relay drivers up to DC-DC converter stages. Logic-level MOSFETs like the FDN337N are a sub-class whose gate threshold is low enough for the gate to be driven directly from microcontroller or logic IC outputs (3 V to 5 V rails) without a dedicated gate-driver stage, simplifying circuit design and reducing bill-of-materials cost. The defining feature of the FDN337N is onsemi (formerly Fairchild Semiconductor) proprietary high-cell-density DMOS technology. This very high density silicon process is specifically tailored to minimize on-state resistance, which reduces conduction losses and in-line power loss in the small SOT-23 body. Logic-level gate drive is the second headline feature, allowing direct interfacing with 3 V and 5 V control logic common in portable systems. According to the onsemi datasheet, the device is particularly suited for low-voltage, battery-powered applications such as notebook computers, portable phones, and PCMCIA cards, where fast switching speed and low in-line power loss are required in a very small surface-mount package. The 30 V VDS rating provides comfortable headroom on 12 V and multi-cell battery rails. Typical applications include low-side load switching in portable electronics, relay and solenoid drivers, battery management disconnect switches, and general-purpose logic-level switching in consumer and industrial boards. When designing with this part, verify the gate-drive amplitude against the datasheet RDS(on) test conditions, since on-resistance at 2.5 V drive is higher than at 4.5 V or 10 V drive, directly affecting conduction loss and junction temperature. This page synthesizes distributor listings, second-source drop-in options, and practical design notes not found in the manufacturer datasheet.
FDP025N06 - 60V 265A N-Channel PowerTrench MOSFET | onsemi
The onsemi FDP025N06 is an N-Channel PowerTrench MOSFET rated at 60 V drain-source voltage, 265 A continuous drain current, and 2.5 milliohm maximum on-state resistance, packaged in a through-hole TO-220AB (3 pins plus tab) package. Originally introduced by Fairchild Semiconductor, the part is now manufactured and supported by onsemi. A power MOSFET is a voltage-controlled semiconductor switch used in the discrete power device hierarchy (MOSFET -> power transistor -> power management). Unlike bipolar transistors, MOSFETs offer essentially static gate drive, fast switching, and low conduction loss when fully enhanced, making them the default choice for power conversion and motor control stages. The defining feature of the FDP025N06 is its extremely low 2.5 milliohm RDS(on), achieved with Fairchild's advanced PowerTrench process, which uses a trench-gate cell structure tailored to minimize on-resistance while maintaining superior switching performance. At high load currents, conduction loss scales with the square of current, so halving RDS(on) quarters the I2R loss - this directly translates to cooler operation, smaller heatsinks, and higher efficiency in high-current paths. The TO-220AB package provides a low thermal-resistance path through the metal tab to a heatsink, supporting the very high 265 A current rating (at specified case temperature) and making the device easy to mount, service, and rework on through-hole boards. Typical applications include DC-DC converter power stages, motor drives, high-current switching supplies, battery protection circuits, and power distribution systems where low conduction loss at 60 V class blocking voltage is required. When designing with this device, always derate the current rating against actual thermal conditions - the 265 A figure applies at controlled case temperature, and real dissipation is limited by RDS(on) x I2 and heatsinking. This page adds value beyond the datasheet by consolidating distributor pricing, verified drop-in alternatives, and practical engineering design notes in one place.
FDP030N06 - 60V N-Channel MOSFET 3.2mOhm TO-220 | onsemi
The onsemi (Fairchild Semiconductor) FDP030N06 is an N-Channel PowerTrench MOSFET rated at 60V drain-source voltage, 120A continuous drain current at Tc=25C, and a maximum on-resistance of 3.2 mOhm, housed in a through-hole TO-220-3 package. A power MOSFET is a voltage-controlled semiconductor switch used at the top of the discrete power device hierarchy within power management systems. Unlike bipolar transistors, MOSFETs exhibit essentially static gate drive requirements and very low conduction losses when driven fully on, making them the dominant choice for switch-mode power conversion above a few watts. Key features of the FDP030N06 include Fairchild PowerTrench trench technology for extremely low RDS(on) (2.6 mOhm typical at the specified test current), fast switching speed, low gate charge, 100% avalanche testing, and high power handling capability of up to 231W at Tc=25C. These characteristics minimize conduction and switching losses in high-current converters. Technically, the trench-gate structure multiplies channel density per unit die area, dramatically reducing specific on-resistance compared with planar MOSFETs. Lot-to-lot process variation is minimized for robust device performance. Per the manufacturer datasheet, typical applications are power supplies and general high-current switching circuits such as DC-DC converters, synchronous rectification, and motor control. Typical applications include switch-mode power supplies, battery-powered high-current motor drives, and low-side switching in welding and inverter equipment, where the 60V rating and 3.2 mOhm RDS(on) directly reduce heat-sinking requirements. Design consideration: derating is essential; the headline 120A and 231W ratings apply at a case temperature of 25C, so thermal design, not the die, usually limits usable current in through-hole TO-220 designs. This page synthesizes distributor availability data, cross-reference findings, and practical design notes not consolidated in the manufacturer datasheet.
FDP100N10 - 100V N-Channel PowerTrench MOSFET | onsemi
The onsemi FDP100N10 is an N-channel PowerTrench MOSFET rated for 100 V drain-source voltage, 75 A continuous drain current (at Tc) and a maximum on-state resistance of 10 mOhm, housed in a through-hole TO-220-3 (TO-220AB) package. Fairchild Semiconductor (now part of onsemi) designed the FDP100N10 using the advanced PowerTrench process, which tailors cell structure and gate geometry to minimize on-state resistance while preserving superior switching performance. A power MOSFET is a voltage-controlled semiconductor switch and rectifier that dominates the power transistor hierarchy for medium-voltage, high-current switching. Unlike bipolar junction transistors, MOSFETs require negligible steady-state gate current, switch in tens of nanoseconds, and combine fast switching with low conduction loss. In the power-management hierarchy, the FDP100N10 sits as a discrete power transistor feeding applications from AC-DC converters to motor drives. Key features of the FDP100N10 include ultra-low 10 mOhm RDS(on) for minimal conduction loss, a 100 V breakdown rating for off-line and 48 V bus designs, 208 W power dissipation capability at Tc, and gate-source voltage limits of plus or minus 20 V. The threshold voltage is specified at 4.5 V maximum at 250 uA, allowing logic-friendly drive with standard gate-driver ICs. Technically, the PowerTrench process uses a shielded-gate trench architecture that reduces specific on-resistance per unit area and moderates gate charge, directly lowering switching loss in high-frequency converters. This yields superior figure-of-merit (RDS(on) x Qg) versus older planar MOSFET technologies, which is critical for efficiency-targeted power stages. Typical applications include switching applications such as AC-DC converters, LED lighting power supplies, DC-DC power stages, and motor control circuits where 100 V tolerance and low conduction loss are required. Design consideration: the TO-220AB package is through-hole, so thermal design centers on the heatsink interface; ensure the mounting tab reaches safe junction temperatures and add a negative-voltage gate drive margin for hard-switching topologies. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
FDP86363-F085 - 80V 110A N-Channel PowerTrench MOSFET | onsemi
The onsemi FDP86363-F085 is an 80V, 110A N-Channel PowerTrench MOSFET housed in a TO-220-3 (TO-220AB) package, delivering 2.8m ohm typical on-resistance and 300W continuous power dissipation. Designed with the onsemi PowerTrench process, this automotive-grade MOSFET targets high-current synchronous-rectifier and motor-drive stages where low conduction loss and high avalanche ruggedness are required. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to amplify and switch electronic signals. Power MOSFETs like the FDP86363-F085 sit in the power-discrete hierarchy as: power MOSFET -> discrete-semi -> power semiconductor -> discrete component. The PowerTrench process refers to onsemi's proprietary shielded-gate trench technology that reduces Rds(on) per unit silicon area, enabling high current handling in compact through-hole packages. Key features of the FDP86363-F085 include 2.8 mOhm typical Rds(on) at Vgs=10V, 80V drain-source breakdown voltage (V(BR)DSS), 110A continuous drain current at 25C case temperature, and an avalanche-rated single-pulse drain current of 240A. The TO-220AB package provides a low 0.5C/W junction-to-case thermal resistance, allowing direct heatsink mounting for high-power applications. The device is qualified to AEC-Q101 for automotive use, making it suitable for 12V/24V vehicle electrical systems. Typical applications include 12V/24V automotive ECU power switching, brushed and brushless DC motor drivers, synchronous-rectifier stages in isolated DC-DC converters, solenoid and relay drivers, and industrial high-current load switches. The combination of low Rds(on), high peak current handling, and AEC-Q101 qualification makes it ideal for harsh-environment automotive subsystems such as electric power steering, transmission control, and battery management. When designing with the FDP86363-F085, ensure the gate-drive voltage reaches 10V for advertised Rds(on) performance. Use a gate resistor (10-100 ohm) to limit ringing, and provide proper heatsinking for continuous high-power operation. The avalanche rating requires careful snubber design in inductive switching applications. This page synthesizes distributor pricing, drop-in same-package and cross-brand alternatives, and practical design notes not found in the manufacturer datasheet. Specifications verified against the onsemi FDP86363-F085 datasheet Rev. 4 (May-2024).
FDS4410A - 30V 10A N-Ch Logic-Level MOSFET | Fairchild
The Fairchild Semiconductor (onsemi) FDS4410A is a single N-channel logic-level PowerTrench MOSFET rated 30 V drain-source voltage and 10 A continuous drain current, housed in an 8-pin SOIC surface-mount package. A power MOSFET is a voltage-controlled semiconductor switch used throughout the power management hierarchy (MOSFET -> discrete transistor -> semiconductor). Logic-level MOSFETs are a subclass specified to turn fully on at 4.5 V gate drive, allowing direct interface with 3.3 V and 5 V microcontroller GPIOs, PWM controllers, and battery-management ICs without a dedicated gate-driver stage. Key features of the FDS4410A include Fairchild's advanced PowerTrench process technology, engineered specifically to minimize on-state resistance while maintaining superior switching performance. The logic-level gate threshold permits low-voltage drive, and the 30 V rating suits low-voltage, battery-powered systems. The compact SOIC-8 footprint provides a well-understood thermal and land-pattern standard for surface-mount assembly. Technically, the PowerTrench trench-FET structure achieves low RDS(on) through dense vertical trench gating, reducing conduction losses in high-current paths. Because the device is optimized for low-voltage switching, gate charge is modest, supporting efficient PWM operation in synchronous topologies and load-switch circuits. Per the manufacturer description, the process has been especially tailored to minimize on-state resistance, which directly lowers I^2R losses at the 10 A rated current. Typical applications include low-voltage and battery-powered systems, DC load switches, low-side switching in portable equipment, and power-path management in consumer and industrial boards. Design consideration: verify RDS(on) at the actual gate-drive voltage in your circuit, since on-resistance rises at reduced VGS, and budget PCB copper on the drain/source pads for thermal dissipation (DigiKey lists 2.5 W (Ta) for the package family). This page synthesizes distributor pricing context, cross-referenced drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
FDS6575 - P-Channel -20V 10A PowerTrench MOSFET | onsemi
The onsemi (Fairchild Semiconductor) FDS6575 is a P-channel, 2.5V-specified PowerTrench MOSFET rated at -20V drain-source voltage and -10A continuous drain current, with a maximum on-resistance of 13 mOhm at VGS = -4.5V, housed in an 8-pin SOIC (SO-8) surface-mount package. It is the rugged-gate version of Fairchild's advanced PowerTrench process, optimized for power management applications with a wide gate drive range of 2.5V to 8V. A P-channel power MOSFET is a voltage-controlled semiconductor switch in which a negative gate-to-source voltage creates a conductive channel between drain and source. Within the power management hierarchy (MOSFET -> discrete power semiconductor -> power management), P-channel devices are prized for high-side load switching because they can be driven directly from a low-side control signal without a charge pump or bootstrap supply, simplifying gate-drive circuitry versus N-channel high-side designs. Key features include low on-resistance for minimal conduction loss, low gate charge for fast, efficient switching in DC-DC converter and load-switch circuits, and the 2.5V-specified gate threshold that allows direct drive from logic-level controllers and battery rails. The rugged gate construction improves robustness against voltage transients, and the wide 2.5V-8V gate drive window covers battery-powered (1-2S Li-ion), 3.3V, and 5V logic environments. Technically, the PowerTrench trench-gate process achieves a low-RDS(on) x Qg figure of merit, reducing both conduction and switching losses. The 13 mOhm on-resistance at -4.5V gate drive yields an estimated conduction loss of about 1.3W at the full -10A rating, so adequate PCB copper is required. Typical applications include high-side load switches in battery-powered portable equipment, battery protection and reverse-polarity circuits, DC-DC converter power stages, hot-swap and power-path management in notebooks and industrial systems. Design consideration: because this is a 2.5V-specified part, verify that the minimum gate drive in your circuit keeps RDS(on) within the power budget; at very low VGS the on-resistance rises significantly. This page adds value beyond the datasheet by synthesizing drop-in alternatives, engineering design notes, comparison tables, and sourcing information in one place.
FDS6670A - 30V 13A N-Channel PowerTrench MOSFET | onsemi
The onsemi FDS6670A is an N-channel logic-level PowerTrench MOSFET rated for 30 V drain-source voltage and 13 A continuous drain current at 25 C ambient, packaged in an 8-pin SOIC (SO-8) surface-mount package with a power dissipation rating of 2.5 W (Ta). An N-channel power MOSFET is a voltage-controlled semiconductor switch in which current flows between drain and source terminals when a positive gate voltage is applied relative to the source. Within the power-management hierarchy, MOSFETs sit alongside IGBTs and relays as the primary switching elements of power converters, load switches, and motor-drive bridges, and small-signal MOSFETs such as the FDS6670A occupy the sub-30V, mid-current segment of that taxonomy. The defining feature of the FDS6670A is Fairchild (now onsemi) advanced PowerTrench process technology, which uses a trench-gate cell structure optimized to minimize on-state resistance while maintaining superior switching performance. Logic-level gate drive means the device turns on fully with a standard 4.5 V gate signal, allowing direct interface with 5 V microcontrollers and battery-management controllers without a dedicated gate-driver supply. Electrically, the combination of low Rds(on), 30 V blocking capability, and the thermally efficient SO-8 body-drain construction makes this device suited to fast-switching topologies where conduction and switching losses both matter. The source pins are bonded to the die with low-inductance wiring that preserves gate-loop integrity at high switching frequencies. Typical applications include low-voltage battery-powered systems, DC-DC converter primary and secondary switches, load switches in portable equipment, and motor-control half-bridges operating from 5-cell to 7-cell battery packs. Designers should provide a substantial PCB copper pour under the drain-connected pins, because the SO-8 package relies on board copper for heat extraction; thermal design margins at 2.5 W dissipation are tight at elevated ambient temperatures. This page adds distributor-sourced availability data, drop-in alternatives, and practical SO-8 thermal layout notes that are not consolidated in the manufacturer datasheet.
FDS8880 - 30V 11.6A N-Channel PowerTrench MOSFET | onsemi
The onsemi FDS8880 is an N-channel PowerTrench MOSFET rated at 30 V drain-source voltage, 11.6 A continuous drain current, with a low on-resistance of 10 mOhm (at VGS = 10 V) and 12 mOhm (at VGS = 4.5 V), housed in an 8-pin SOIC surface-mount package. An N-channel power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in a circuit. Within the power-management hierarchy, MOSFETs sit between gate drivers and the load, translating low-voltage control signals into high-current switching action. Power MOSFETs such as the FDS8880 are the workhorses of DC/DC converters, motor drives, and load-switch circuits. The FDS8880 was designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), and fast switching speed, using Fairchild (now onsemi) PowerTrench trench technology to achieve extremely low on-resistance in the compact 8-SOIC footprint. Key features include a 30 V VDS rating suitable for 12 V and 24 V intermediate bus rails, high power and current handling capability for its package class, and a 2.5 W power dissipation rating at 25 C ambient. The device is RoHS compliant. Typical applications include synchronous-rectifier and main-switch roles in step-down converters, point-of-load power supplies, and DC motor control circuits where low conduction loss matters. Design consideration: because the part is in Last Shipments status, new designs should qualify a second source early; also verify VGS drive level (4.5 V vs 10 V) since rDS(on) differs meaningfully between the two ratings. This page synthesizes distributor pricing, lifecycle status, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
FDS8884 - 30V 8.5A N-Channel PowerTrench MOSFET | onsemi
The onsemi FDS8884 is an N-Channel PowerTrench MOSFET rated 30V drain-source voltage, 8.5A continuous drain current, with a low 23 mOhm on-resistance, housed in an 8-pin SOIC surface-mount package. Originally introduced by Fairchild Semiconductor and now manufactured by onsemi, it targets DC/DC converter efficiency. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts when a positive gate-source voltage is applied. Within the power management hierarchy, MOSFETs sit under discrete power semiconductors and serve as the primary switching elements in voltage regulators, motor drivers, and load switches. PowerTrench devices are onsemi's flagship trench-gate MOSFET technology, engineered to minimize conduction and switching losses simultaneously. The FDS8884's headline feature set includes low on-resistance of 23 mOhm, which reduces conduction losses (I^2 x RDS(on)); low gate charge, which reduces gate-drive losses at high switching frequencies; and fast switching speed, which shortens transition intervals in PWM converters. The device is rated for 2.5W power dissipation at TA in the 8-SOIC package. These characteristics make it especially well suited for synchronous buck converter applications where it can serve as the control FET or synchronous rectifier. Architecturally, PowerTrench technology uses a vertical trench-gate structure that packs more channel density per die area than planar designs, lowering RDS(on) x area figure-of-merit. The optimized charge balance also reduces Qgd, limiting Miller plateau duration and shoot-through risk in half-bridge topologies. Typical applications include synchronous and conventional PWM DC/DC converters, point-of-load power supplies, notebook and desktop VRM circuits, and general-purpose load switching in industrial and consumer electronics. Design consideration: verify gate drive voltage against the datasheet RDS(on) test condition, since on-resistance rises at reduced VGS; also ensure SOIC-8 thermal copper pour for dissipations approaching the 2.5W rating. This page synthesizes distributor availability, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
FDS9435A - 30V P-Channel PowerTrench MOSFET | onsemi
The onsemi FDS9435A is a 30V P-Channel PowerTrench MOSFET rated for 5.3A continuous drain current (Ta) and 2.5W power dissipation (Ta), housed in a surface-mount 8-SOIC package. It is a rugged-gate version of onsemi's advanced PowerTrench process, optimized for power management applications that require a wide gate-drive voltage range (4.5V to 25V). A P-Channel MOSFET (PMOS) is a type of metal-oxide-semiconductor field-effect transistor in which the channel is formed by holes rather than electrons. In the broader semiconductor taxonomy, it belongs to the MOSFET family, which itself sits under discrete semiconductors and power management devices. P-Channel MOSFETs are typically used for high-side load switching because the source is tied to the system supply and the device is turned on by pulling the gate below the source potential, simplifying gate-drive design when the system controller already has a low-voltage reference. Key features of the FDS9435A include a low on-resistance of 50 milliohms at VGS = 10V and 80 milliohms at VGS = 4.5V, plus the rugged-gate construction that withstands 4.5V to 25V gate drive. The PowerTrench cell architecture reduces Rds(on) per unit silicon area, and the 8-SOIC footprint allows standard surface-mount assembly. Together, these characteristics make the FDS9435A suitable for low-voltage DC load switching and small-signal power management where a rugged gate is required. The PowerTrench process uses a proprietary shielded-gate trench structure that minimizes cell pitch and reduces conduction losses versus older planar MOSFET generations. This translates into lower Rds(on) for the same die size, enabling higher efficiency in switching applications, or smaller PCB area for the same efficiency. The P-channel polarity is complementary to the more common N-channel MOSFET and simplifies circuit design in high-side switch topologies because the load can be returned to system ground. Typical applications include high-side load switches in notebook and desktop computing, USB power distribution, battery protection circuits in portable equipment, and general low-voltage DC-DC conversion. The wide VGS rating (4.5V to 25V) also makes it suitable for motor drive and solenoid switching where the gate driver voltage is independent of the system logic supply. When designing with this part, observe the 2.5W Ta power dissipation limit and provide adequate copper area on the PCB to keep the junction temperature within the rated maximum. The SO-8 footprint has a higher junction-to-ambient thermal resistance than larger packages (such as DPAK), so thermal vias or a copper pour are typically required for continuous high-current operation. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical PCB layout notes for engineers evaluating the FDS9435A as a high-side switch candidate.
FDV301N - 25V 220mA N-Channel Digital FET | onsemi | SOT-23
The onsemi FDV301N is a 25 V N-channel logic-level enhancement-mode MOSFET rated for 0.22 A continuous drain current (0.5 A peak) with RDS(on) of 4 ohm (typical) and 350 mW power dissipation, housed in a 3-pin SOT-23 surface-mount package. A digital FET, or logic-level MOSFET, is a small-signal field-effect transistor designed to switch fully on at the low gate-source voltages produced by microcontrollers, logic gates, and other digital ICs. Within the semiconductor hierarchy it sits under N-channel MOSFET -> small-signal MOSFET -> discrete power transistor -> Discrete & Power Modules. Unlike a bipolar digital transistor (which contains built-in base bias resistors), a digital FET requires no bias resistors at all, so a single device can replace several digital transistors that would otherwise need different bias-resistor values. Key differentiating features include a 25 V drain-source rating for low-voltage rail switching, a typical RDS(on) of 4 ohm that minimizes conduction losses, and onsemi's proprietary high-cell-density DMOS silicon process. The DMOS process is specifically tailored to minimize on-state resistance at low gate drive, which is the defining characteristic of the digital-FET class. Technically, the FDV301N is an enhancement-mode device: the channel is off at VGS = 0 V and turns on as gate voltage rises toward 2.7 V and beyond, where the datasheet characterizes RDS(on) around 5 ohm. Because the gate is insulated (MOS structure), gate drive current is negligible in steady state, allowing direct connection to GPIO pins with only a small series resistor for ESD/ring control. Typical applications include low-side load switching in portable and battery-powered equipment, GPIO fan and LED load control, level-agnostic logic interfacing where digital transistors previously dominated, and small relay or buzzer drivers in consumer and industrial boards. A key design consideration is power budget: at 220 mA and 4 ohm, conduction loss is roughly 0.19 W, which is Estimated: (I^2 x RDS(on), inputs 0.22 A and 4 ohm) approaching half of the 350 mW package limit, so verify worst-case VGS drive and ambient temperature. This page synthesizes verified distributor data, drop-in alternatives, and design notes not consolidated in the manufacturer datasheet alone. Pricing shown is representative as of 2026-09-14 and should be confirmed at checkout.