STMicroelectronics
STF25NM60ND - 600V 21A N-Ch MOSFET TO-220FP | STMicroelectronics
부품 번호: STF25NM60ND ✓ 활성
재고 있음
영업일 기준 1~3일 내 발송
600 V Vdss
21 A Id
0.13 ohm Rds(on)
TO-220FP (isolated) Package
시작가 $1
USD / 개
MOQ: 1 |
가격 업데이트: 2026-09-03
볼륨 가격
| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1 | $1.00 |
ℹ️ 모든 가격은 USD 기준입니다
STF25NM60ND 개요
The STMicroelectronics STF25NM60ND is an N-channel 600 V power MOSFET built on the FDmesh II trench technology, rated for 21 A drain current (at Tc) and 40 W power dissipation in an isolated TO-220FP package. Its typical on-resistance of 0.13 ohm and integrated fast-recovery body diode make it well suited for off-line switched-mode power conversion.
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters.
Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting.
The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments.
Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers.
Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters.
Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting.
The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments.
Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers.
Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
드롭인 대체품: STF25NM60ND — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
이 제품에는 사용 가능한 드롭인 대체품이 없습니다.
대체품 요청STF25NM60ND 최대 정격 & 전기적 특성
| Polarity | N-Channel |
| Drain-Source Voltage (VDSS) | 600 V |
| Continuous Drain Current (ID at Tc) | 21 A |
| On-Resistance (RDS(on) typ) | 0.13 ohm |
| Power Dissipation (PD at Tc) | 40 W |
| Technology | FDmesh II trench |
| Body Diode | Fast recovery intrinsic |
| 패키지 | TO-220FP (isolated) |
| 실장 유형 | Through Hole |
| Isolation | Fully molded isolated package (F suffix) |
| RoHS 상태 | Compliant |
| Configuration | Single MOSFET |
STF25NM60ND 핀 구성
| 핀 1 | Gate (G) — Gate control terminal |
| 핀 2 | Drain (D) — Connected to heatsink tab, drain terminal |
| 핀 3 | Source (S) — Source terminal |
안전 동작 영역
DC 연속 동작
일반적인 애플리케이션
STF25NM60ND 적합 용도: 3 애플리케이션s: 전력 관리, 모터 제어, LED 조명.
전력 관리
STF25NM60ND을(를) 사용한 전원 공급 회로의 스위칭 및 레귤레이션.
모터 제어
STF25NM60ND을(를) 사용한 DC/BLDC 모터 구동 및 제어.
LED 조명
STF25NM60ND을(를) 사용한 LED 스트링 및 어레이 구동.
이 제품에 대한 FAQ가 없습니다.
엔지니어링 참조 데이터: STF25NM60ND — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
Choose the STF25NM60ND when you need a 600 V, 21 A N-channel MOSFET with an isolated TO-220FP package for off-line power converters requiring a fast-recovery body diode and no external isolation pad. Choose STP25NM60ND for non-isolated TO-220 mounting with better thermal performance. Choose STB25NM60ND (D2PAK) for surface-mount-friendly boards. Choose STF23NM60ND when slightly lower current (23 A class) suffices at lower cost. For 650 V designs with more margin, consider STF24NM65N. The isolated FP package trades thermal resistance for mounting convenience and isolation.
규정 준수 정보
RoHS
Compliant
REACH
Unknown
AEC-Q100
무연
무할로겐
Unknown
분쟁 광물
Unknown
RoHS compliance per STMicroelectronics product listing; other statuses not stated in provided data.
데이터 검증일: 2026-08-29
— XAIPART 부품 엔지니어링 팀이 검증하고 관리한 데이터
관련 검색
STF25NM60ND datasheet PDF
STF25NM60ND STMicroelectronics MOSFET
STF25NM60ND pinout TO-220FP
600V N-channel MOSFET 21A isolated TO-220FP
STF25NM60ND equivalent replacement
STF25NM60ND vs STF23NM60ND
STF25NM60ND price buy
STF25NM60ND flyback converter switch
fast body diode 600V MOSFET
what replaces STF25NM60ND
관련 부품 & 용어
STMicroelectronics
STF25NM60ND
STP25NM60ND
STB25NM60ND
STF23NM60ND
STF24NM65N
power MOSFET
N-channel MOSFET
discrete semiconductor
FDmesh II
TO-220FP
TO-220
D2PAK
fast recovery body diode
RDS(on)
600 V breakdown voltage
RoHS
off-line SMPS
flyback converter
PFC
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