1ED3122MC12HXUMA1 vs 1EDN7116GXTMA1 비교
다음의 상세 나란히 비교: 1ED3122MC12HXUMA1 제조: Infineon 및 1EDN7116GXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 1ED3122MC12HXUMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.92 | $0.84 |
| Product Type | Isolated Gate Driver (single-channel) | — |
| Isolation Technology | Coreless Transformer (CT) | — |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Maximum Transient Isolation (Vpk) | 8 kVpk | — |
| Output Current (source / sink) | 10 A / 9 A | — |
| Configuration | High-side, non-inverting | — |
| Number of Channels | 1 | — |
| Supply Voltage (VCC / VBS) | 8 V to 35 V | — |
| Propagation Delay (typ.) | 30 ns | — |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns | — |
| Miller Clamp | Active (integrated) | Integrated, active |
| Short-Circuit Clamping | Yes | — |
| UVLO | Primary and secondary side | Yes (VCC and gate-rail monitored) |
| 동작 온도 | -40 C to +125 C | — |
| 패키지 | PG-DSO-8-66 (300-mil DSO-8) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 2 | MSL3 |
| RoHS 상태 | Compliant | Compliant |
| 기능 | — | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| 동작 온도 범위 | — | -40 °C to +125 °C |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |