1ED3142MC12HXUMA1 vs 1EBN1001AEXUMA1 비교
다음의 상세 나란히 비교: 1ED3142MC12HXUMA1 제조: Infineon 및 1EBN1001AEXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
1EBN1001AEXUMA1 ✓ 활성사양 비교
| 파라미터 | 1ED3142MC12HXUMA1 | 1EBN1001AEXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.32 | $4.41 |
| Manufacturer | Infineon Technologies | — |
| Part Number | 1ED3142MC12HXUMA1 | — |
| Product Family | EiceDRIVER X3 Compact | — |
| Driver Type | Isolated single-channel gate driver | — |
| Isolation Technology | Coreless transformer (galvanic) | — |
| Isolation Voltage | 3000 Vrms | — |
| Number of Channels | 1 | — |
| 출력 수 | 2 (separate source/sink) | 2 (separate source and sink paths) |
| Configuration | Inverting, Non-Inverting | High-Side / Low-Side (non-inverting booster) |
| Source Drive Current | 6 A | — |
| Sink Drive Current | 6.5 A | — |
| Maximum Rise Time | 20 ns | — |
| Maximum Fall Time | 20 ns | — |
| Propagation Delay (typ.) | 40 ns | — |
| Supported Switches | IGBT, MOSFET, SiC MOSFET | — |
| 패키지 | PG-DSO-8 (PG-LDSO-8-1) | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) |
| 실장 유형 | Surface Mount | Surface Mount |
| EU RoHS | Compliant | — |
| Part Status | Active | — |
| ECCN | EAR99 | — |
| Product Type | — | Isolated single-channel IGBT/MOSFET gate driver booster |
| Series | — | EiceDRIVER™ Boost (1EBN family) |
| Peak Output Current | — | ±15 A |
| Number of Drivers | — | 1 |
| Input Signal | — | ASC input, active-clamping disable |
| Active Clamping | — | Yes (very fast reaction time) |
| 동작 온도 | — | -40 °C to +125 °C (automotive grade) |
| Automotive Qualification | — | AEC-Q100 qualified |
| MSL 레벨 | — | [DATA_NEEDED: MSL level] |
| RoHS 상태 | — | Compliant |
| Target Switching Stage | — | Motor drives > 10 kW (up to 400 A modules) |