1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
부품 번호: 1ED3142MC12HXUMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.45 | $24.50 |
| 100 | $1.98 | $198.00 |
| 500 | $1.72 | $860.00 |
| 1,000 | $1.48 | $1,480.00 |
| 3,000 | $1.32 | $3,960.00 |
1ED3142MC12HXUMA1 개요
What is an isolated gate driver? An isolated gate driver is a power-semiconductor interface IC that provides both signal-level shifting (logic-to-driver domain) and galvanic isolation between the low-voltage control domain (microcontroller, FPGA) and the high-voltage switching domain (IGBT/MOSFET/SiC half-bridge). It belongs to the broader family of gate driver ICs, which sits under power management and motor-drive hierarchies. Isolated drivers are essential when the switch node swings hundreds of volts and would otherwise violate the creepage/clearance and human-safety isolation requirements of an MCU.
The 1ED3142MC12HXUMA1 features a coreless-transformer isolation technology, separate source/sink outputs, and a programmable output UVLO referenced to the secondary-side ground (GND2). Typical propagation delay is 40 ns, with rise/fall times of 20 ns, making it suitable for switching frequencies above 100 kHz. Per the manufacturer datasheet, the part supports high CMTI (Common-Mode Transient Immunity) operation required for fast-switching SiC MOSFETs at high dv/dt.
The architecture combines an on-chip oscillator/rectifier that reconstructs the secondary-side supply from the primary-side high-frequency carrier, eliminating the need for an isolated DC-DC converter in low-power applications. This simplifies BOM count and reduces board area. The PG-DSO-8 package provides a wide-creepage lead frame suitable for reinforced insulation.
Typical applications include industrial servo drives, photovoltaic string inverters, on-board EV chargers, telecom rectifiers, and welding power supplies. The 6 A peak drive strength and tight delay matching enable high-efficiency hard-switched and resonant topologies. The device's high CMTI is particularly valuable for SiC MOSFETs, where dv/dt can exceed 50 kV/μs.
When designing with this part, place the bootstrap supply close to the driver and observe the minimum output UVLO threshold for the target SiC/IGBT. The two separate outputs (OUT, OUT_L) should be tied together at the gate with individual gate resistors if separate rise/fall-time control is desired. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes beyond the manufacturer datasheet.
드롭인 대체품: 1ED3142MC12HXUMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: 1ED3142MC12HXUMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Configuration, Number of Outputs, Peak Sink Current, Peak Source Current.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
1ED3125MU12FXUMA1
✅ 드롭인✓ 재고 있음
$1.55 / 개
데이터시트 보기 →1EDN7550BXTSA1
✅ 드롭인✓ 재고 있음
$0.59 / 개
데이터시트 보기 →1EDN7126GXTMA1
✅ 드롭인✓ 재고 있음
$0.29 / 개
데이터시트 보기 →2ED21844S06JXUMA1
✅ 드롭인✓ 재고 있음
$1.68 / 개
데이터시트 보기 →2ED2106S06FXUMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →1ED3142MC12HXUMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Number | 1ED3142MC12HXUMA1 |
| Product Family | EiceDRIVER X3 Compact |
| Driver Type | Isolated single-channel gate driver |
| Isolation Technology | Coreless transformer (galvanic) |
| Isolation Voltage | 3000 Vrms |
| Number of Channels | 1 |
| 출력 수 | 2 (separate source/sink) |
| Configuration | Inverting, Non-Inverting |
| Source Drive Current | 6 A |
| Sink Drive Current | 6.5 A |
| Maximum Rise Time | 20 ns |
| Maximum Fall Time | 20 ns |
| Propagation Delay (typ.) | 40 ns |
| Supported Switches | IGBT, MOSFET, SiC MOSFET |
| 패키지 | PG-DSO-8 (PG-LDSO-8-1) |
| 실장 유형 | Surface Mount |
| EU RoHS | Compliant |
| Part Status | Active |
| ECCN | EAR99 |
1ED3142MC12HXUMA1 핀 구성
| 핀 1 | VCC1 — Primary-side (low-voltage) supply, 3.1 V to 5.5 V |
| 핀 2 | GND1 — Primary-side ground, reference for control logic |
| 핀 3 | IN+ — Non-inverting PWM input from MCU/FPGA |
| 핀 4 | IN- — Inverting PWM input (optional) |
| 핀 5 | GND2 — Secondary-side ground reference for the driven switch |
| 핀 6 | VCC2 — Secondary-side (gate-drive) supply, UVLO-referenced |
| 핀 7 | OUT_L — Gate-drive sink output (pull-down) |
| 핀 8 | OUT — Gate-drive source output (pull-up) |
일반적인 애플리케이션
1ED3142MC12HXUMA1 적합 용도: 6 애플리케이션s: Industrial Servo Drives, Photovoltaic String Inverters, On-Board EV Chargers (OBC), Telecom Rectifier Modules, Industrial Welding Power Supplies, Solar Microinverters and Power Optimizers.
Industrial Servo Drives
The 1ED3142MC12HXUMA1 fits servo drives because its 6 A source / 6.5 A sink drive current and 40 ns typical propagation delay satisfy the switching demands of 600 V/1200 V IGBT half-bridges used in three-phase inverters. The 3000 Vrms coreless-transformer isolation meets IEC 61800-5-1 reinforced-insulation requirements, while high CMTI rejects the fast dv/dt events from IGBT turn-off. Placed between the control MCU and the IGBT module, the part sequences gate charge and discharge through 5-10 Ω gate resistors, reducing switching losses versus discrete driver designs.
추천
Photovoltaic String Inverters
In PV string inverters, the 1ED3142MC12HXUMA1 drives SiC MOSFETs and IGBTs in the DC-AC conversion stage with its 6 A source/6.5 A sink drive strength. The 40 ns propagation delay and 20 ns rise/fall times enable switching frequencies above 50 kHz, reducing output-filter magnetics size. The 3000 Vrms isolation supports the high DC-link voltage and provides reinforced insulation for grid-tie safety per IEC 62109. Mount the part with a low-inductance bootstrap diode and 1 µF X7R bypass capacitor for stable VCC2 operation.
추천
On-Board EV Chargers (OBC)
The 1ED3142MC12HXUMA1 supports OBC PFC and DCDC stages by driving 650 V/1200 V SiC MOSFETs in totem-pole and LLC topologies. Its high CMTI (>100 kV/μs) rejects the high dv/dt from SiC switching, while 6 A drive strength ensures rapid gate charging to minimize transition losses. The PG-DSO-8 footprint with reinforced isolation simplifies PCB layout and meets IEC 60664-1 creepage for 800 V battery systems. Use separate source/sink gate resistors for tunable EMI and switching-loss balance.
추천
Telecom Rectifier Modules
In 48 V telecom rectifiers and -48 V HVDC modules, the 1ED3142MC12HXUMA1 drives the primary-side MOSFETs of a DCDC stage with reinforced isolation to meet IEC 62368-1. Its 40 ns propagation delay enables higher switching frequencies that shrink the transformer, while 6 A drive handles 600 V or 800 V primary MOSFETs. The coreless-transformer isolation integrates the safety barrier without an optocoupler, increasing MTBF in always-on telecom applications.
추천
Industrial Welding Power Supplies
Welding inverters rely on robust gate drivers to handle 600 V/1200 V IGBT modules at high switching currents; the 1ED3142MC12HXUMA1 fits this role with 6.5 A sink current that pulls the gate below threshold quickly, preventing Miller-induced shoot-through. The 3000 Vrms reinforced isolation survives the high dv/dt and noisy environment, while the wide-body PG-DSO-8 package maintains creepage under harsh industrial pollution. Pair with a 1 W bootstrap diode and 22 µF X7R VCC2 capacitor for sustained high-duty-cycle operation.
추천
Solar Microinverters and Power Optimizers
In microinverters and module-level power optimizers, the 1ED3142MC12HXUMA1 drives the high-frequency primary MOSFETs of a DCDC stage with reinforced isolation to the grid side. Its compact PG-DSO-8 footprint and 6 A drive strength suit 300 W class designs where PCB area is constrained. The 40 ns propagation delay enables zero-voltage-switching (ZVS) phase-shift topologies, while high CMTI maintains reliability under rapid switching transients.
추천
추천 제품 요약
엔지니어링 참조 데이터: 1ED3142MC12HXUMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | 1ED3125MU12FXUMA1 | 1EDN7550BXTSA1 | 1EDN7126GXTMA1 | 2ED21844S06JXUMA1 | 2ED2106S06FXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-8 | PG-DSO-8 - same | PG-SOT-23-6 (different package, included for parametric comparison only) | PG-SOT-23-6 (different package, included for parametric comparison only) | PG-DSO-8 - same | PG-DSO-8 - same |
| Source Drive Current | 6 A | 5 A | 4 A | 2 A | 2.5 A (per channel) | 0.6 A |
| Sink Drive Current | 6.5 A | 5 A | 4 A | 2 A | 2.5 A (per channel) | 0.6 A |
| Isolation Voltage | 3000 Vrms | 3000 Vrms | N/A (non-isolated) | N/A (non-isolated) | 3000 Vrms | 3000 Vrms |
| Propagation Delay (typ.) | 40 ns | 40 ns | 37 ns | 37 ns | 50 ns | 80 ns |
| Channels | 1 | 1 | 1 | 1 | 2 (half-bridge) | 2 (half-bridge) |
| Supported Switches | IGBT/MOSFET/SiC | IGBT/MOSFET/SiC | IGBT/MOSFET | MOSFET only | IGBT/MOSFET | IGBT/MOSFET |
주요 차별점
- Highest drive current in PG-DSO-8 isolated driver family (vs 1ED3125MU12FXUMA1)
- Single-channel vs half-bridge (vs 2ED21844S06JXUMA1)
- Reinforced isolation versus non-isolated driver (vs 1EDN7126GXTMA1)
설계 노트
Place the bootstrap diode and 1 µF X7R VCC2 bypass capacitor as close to pins 5-6 of the PG-DSO-8 as possible to minimize the high-current gate-charge loop. Estimated: with a 6 A peak source current and a 50 nC gate charge, the bypass capacitor must supply the transient in <1 µs without drooping below UVLO; 1 µF X7R is adequate for switching frequencies up to ~200 kHz.
Route the primary-side (VCC1/GND1) and secondary-side (VCC2/GND2) ground returns so that any high-di/dt loop does not cross the isolation barrier on the PCB. Maintain at least 8 mm creepage between primary and secondary copper to support reinforced insulation per IEC 60747-17. The PG-DSO-8 wide-body package gives a head-start but does not replace good layout.
Twist or tightly couple the gate-drive output traces to the driven switch to minimize parasitic inductance. Estimated: with 20 ns rise time and a 5 nH gate-loop inductance, an Ldi/dt spike of 6 A × 5 nH / 20 ns = 1.5 V can appear at the gate; a small ferrite bead or 2-5 Ω gate resistor damps the resulting ringing and reduces EMI.
Do not exceed the VCC2 UVLO turn-on threshold when using the part to drive SiC MOSFETs with low gate-voltage ratings. The 1ED3142M variant targets IGBT/SiC UVLO (around 11 V); if the application requires a different threshold, choose the 1ED3141 variant or external-divider version. Always validate UVLO behavior in the worst-case cold-start condition.
규정 준수 정보
EU RoHS compliant per Arrow listing; active part status. Not AEC-Q100 qualified - choose automotive-qualified variants for EV applications.
