1EDI3033ASXUMA1 - 12A SiC MOSFET Gate Driver, 5700Vrms | Infineon
부품 번호: 1EDI3033ASXUMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $7.12 | $7.12 |
| 10 | $6.41 | $64.10 |
| 100 | $5.67 | $567.00 |
| 500 | $5.05 | $2,525.00 |
| 1,000 | $4.48 | $4,480.00 |
| 3,000 | $4.21 | $12,630.00 |
1EDI3033ASXUMA1 개요
A gate driver IC is a power-management semiconductor that sits between a low-power control MCU/DSP and a high-power switching transistor. Its job is to level-shift logic signals to the gate-drive voltage required by the power device, provide the high peak currents needed to charge and discharge the gate capacitance, and reinforce galvanic isolation between the low-voltage control domain and the high-voltage power stage. Within the broader taxonomy, the 1EDI3033ASXUMA1 belongs to the isolated gate driver family, which itself is a sub-category of power MOSFET drivers, which sit under power management ICs. This hierarchy matters because isolation rating, propagation delay, and source/sink current are the three figures of merit that distinguish EV-grade SiC/IGBT drivers from generic half-bridge drivers.
Key features include a 12 A typical source/sink output stage, 60 ns propagation delay with minimal part-to-part variation, and built-in DESAT detection with programmable blanking for short-circuit protection. The coreless transformer technology eliminates the need for a discrete pulse transformer, reducing PCB area and improving robustness under high dv/dt transients typical of 800 V EV battery architectures. The wide-body PG-DSO-20-91 package provides 8 mm creepage and 5700 Vrms isolation, exceeding the requirements of 800 V battery systems and meeting IEC 60664-1 overvoltage category II.
Architecturally, the device uses Infineon's coreless-transformer (CT) isolation barrier to transmit PWM commands across the isolation boundary, with on-chip encoding/decoding and refresh-pulse verification. The output stage uses a complementary N-channel MOSFET push-pull pair capable of 12 A typical gate current, which translates to sub-50 ns rise/fall times on typical SiC MOSFETs such as Infineon's CoolSiC family. An internal charge pump supports unipolar gate-drive operation, simplifying the auxiliary supply design.
Typical applications include EV traction inverters for 400 V and 800 V battery architectures, on-board chargers (OBC), DC-DC boost converters for HV-LV power transfer, and industrial servo drives. The combination of ASIL D readiness, 12 A drive strength, and 60 ns delay also makes the 1EDI3033ASXUMA1 a candidate for solar string inverters and high-power EV fast-charging stations.
When designing with this driver, pay close attention to gate-resistor selection: a 2.2 to 10 ohm range typically balances switching loss against ringing, and the DESAT threshold must be set well below the SiC MOSFET's RBSOA limit. Keep the high-side bootstrap capacitor close to the BST and HB pins to avoid UVLO trips during 100% duty-cycle operation.
드롭인 대체품: 1EDI3033ASXUMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: 1EDI3033ASXUMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Function, Number of Outputs, Peak Sink Current, Peak Source Current.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
1EDI3031AS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
1EDI3032AS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
1EDI3033ASXUMA2
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
1ED3124MC12HXUMA1
✅ 드롭인✓ 재고 있음
$1.45 / 개
데이터시트 보기 →1EDN7136UXTSA1
✅ 드롭인✓ 재고 있음
$0.74 / 개
데이터시트 보기 →1EDI3033ASXUMA1 최대 정격 & 전기적 특성
| 기능 | Isolated single-channel gate driver |
| Technology | Coreless transformer isolation |
| Output Current (Source/Sink) | 12 A typical |
| Isolation Voltage (Vrms) | 5700 Vrms |
| Number of Channels | 1 |
| Propagation Delay | 60 ns typical |
| Target Power Device | SiC MOSFET, IGBT |
| 패키지 | PG-DSO-20-91 (wide-body) |
| 동작 온도 | -40 C to +125 C |
| Short-Circuit Protection | DESAT with programmable blanking |
| Miller Clamp | Active Miller clamp integrated |
| Bootstrap Diode | Integrated |
| Functional Safety | ISO 26262 ASIL D ready |
| Creepage Distance | 8 mm (typical for wide-body DSO-20) |
| 실장 유형 | Surface Mount |
| Compliance | RoHS compliant |
1EDI3033ASXUMA1 핀 구성
| 핀 1 | VDD1 — Primary-side supply voltage (3.3V or 5V logic domain) |
| 핀 2 | GND1 — Primary-side ground reference |
| 핀 3 | IN+ — Non-inverting PWM input |
| 핀 4 | IN- — Inverting PWM input |
| 핀 5 | FLT_RDY — Fault/Ready open-drain output |
| 핀 6 | DESAT — Desaturation protection input |
| 핀 7 | VSS2 — Secondary-side gate-driver ground (power ground) |
| 핀 8 | VEE2 — Negative gate-drive supply (or tied to VSS2 for unipolar drive) |
| 핀 9 | VCC2 — Positive gate-drive supply (typically +15V to +20V) |
| 핀 10 | OUT — Gate-drive output to SiC MOSFET or IGBT gate |
| 핀 11 | NC — Not connected (per datasheet) |
| 핀 12 | NC — Not connected (per datasheet) |
| 핀 13 | NC — Not connected (per datasheet) |
| 핀 14 | NC — Not connected (per datasheet) |
| 핀 15 | NC — Not connected (per datasheet) |
| 핀 16 | NC — Not connected (per datasheet) |
| 핀 17 | NC — Not connected (per datasheet) |
| 핀 18 | NC — Not connected (per datasheet) |
| 핀 19 | NC — Not connected (per datasheet) |
| 핀 20 | NC — Not connected (per datasheet) |
일반적인 애플리케이션
1EDI3033ASXUMA1 적합 용도: 6 애플리케이션s: EV Traction Inverter (400V/800V), On-Board Charger (OBC) HV Stage, Industrial Servo Drive, Solar String Inverter, EV DC Fast Charger (HV Side), Aerospace HV Power Conversion.
EV Traction Inverter (400V/800V)
The 1EDI3033ASXUMA1 directly drives SiC MOSFETs in 400V and 800V EV traction inverters. Its 5700 Vrms isolation meets IEC 60664-1 reinforced insulation for 800V battery systems, while 12 A source/sink current charges CoolSiC gate capacitances in tens of nanoseconds, minimizing switching loss. ISO 26262 ASIL D readiness simplifies functional-safety documentation. The 60 ns propagation delay enables deterministic dead-time at high PWM frequencies. Recommended pairing: Infineon CoolSiC EasyPACK modules and Aurix TC3x MCU family.
추천
On-Board Charger (OBC) HV Stage
On-board chargers for EVs use the 1EDI3033ASXUMA1 to drive SiC MOSFETs in the HV PFC and DCDC stages. The driver's coreless-transformer isolation eliminates bulky discrete pulse transformers, shrinking PCB area. Its DESAT short-circuit protection reacts within hundreds of nanoseconds, protecting the SiC MOSFET against shoot-through faults. The 12 A drive strength supports fast switching frequencies above 100 kHz to shrink magnetics. Typical OBC power levels are 6.6 kW to 22 kW.
추천
Industrial Servo Drive
Industrial servo drives for robotics and CNC machinery employ the 1EDI3033ASXUMA1 to drive IGBT modules in the three-phase output stage. The 12 A peak current supports high-current IGBT modules up to several hundred amps, while 60 ns delay keeps PWM dead-time short for low torque ripple. The active Miller clamp prevents parasitic turn-on from high dv/dt in long motor cables, and ASIL D readiness is overkill for industrial but offers headroom for safety-critical servo applications.
추천
Solar String Inverter
Solar string inverters rated 10 kW to 100 kW use the 1EDI3033ASXUMA1 to drive SiC or IGBT power stages in the DC-DC boost and DC-AC inverter sections. The 5700 Vrms isolation simplifies the layout for 1500 V DC string architectures common in utility-scale solar. The driver's 12 A output enables switching frequencies above 50 kHz, shrinking LCL filter magnetics. DESAT protection with programmable blanking allows fine-tuning for IGBT or SiC short-circuit behavior.
추천
EV DC Fast Charger (HV Side)
DC fast chargers (50 kW to 350 kW) for roadside EV charging stations deploy the 1EDI3033ASXUMA1 to drive SiC MOSFETs in the HV AC-DC and DC-DC stages. The driver's 12 A peak current and 60 ns delay support high switching frequencies that shrink the magnetics needed to meet the charger's volume and weight constraints. ASIL D readiness aids chargers targeting automotive-grade reliability. The 5700 Vrms isolation withstands transient spikes on the HV bus.
추천
Aerospace HV Power Conversion
Aerospace HV-DC power converters for more-electric aircraft use the 1EDI3033ASXUMA1 to drive SiC MOSFETs in 270 V and 540 V bus architectures. The 5700 Vrms isolation and 8 mm creepage handle the overvoltage transients common in aerospace electrical systems, while ASIL D readiness supports DO-178C / DO-254 development workflows. The wide operating temperature range of -40 C to +125 C suits avionics bay environments. Companion: radiation-tolerant microcontroller and HV bus filter.
추천
추천 제품 요약
엔지니어링 참조 데이터: 1EDI3033ASXUMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | 1EDI3031AS | 1EDI3032AS | 1EDI3033ASXUMA2 | 1ED3124MC12HXUMA1 | 1EDN7136UXTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-20-91 | PG-DSO-20-91 (same) | PG-DSO-20-91 (same) | PG-DSO-20-91 (same) | DSO-16 wide-body (different pin count) | PG-TDSO-8 (different pin count) |
| Isolation Voltage | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5700 Vrms | Non-isolated |
| Target Power Device | SiC MOSFET, IGBT | SiC MOSFET, IGBT | SiC MOSFET, IGBT | SiC MOSFET, IGBT | IGBT | MOSFET (low-side only) |
| Channels | 1 | 1 | 1 | 1 | 1 | 1 (low-side only) |
주요 차별점
- Highest drive current in the 1EDI303x AS family (vs 1EDI3031AS)
- Wider pin count and creepage than 1ED31x4 family (vs 1ED3124MC12HXUMA1)
- Isolated vs non-isolated - different application class (vs 1EDN7136UXTSA1)
설계 노트
Gate-resistor selection is critical for SiC MOSFET switching loss versus EMI. A starting value of 2.2 to 5 ohms for turn-on and 1 to 3 ohms for turn-off is typical for CoolSiC. At 12 A drive current the gate voltage transition completes in tens of nanoseconds; verify that the gate-loop inductance (driver output to gate to source return) is below 5 nH to avoid overshoot above the SiC Vgs,max rating of typically +20V.
Although the PG-DSO-20-91 is a wide-body package with reasonable power dissipation capability (theta_JA ~50 C/W on a 2 oz 4-layer board), the dominant thermal stress comes from the driven SiC MOSFET, not the driver itself. Ensure the driver primary-side supply (VDD1 = 3.3V or 5V) has at least 100 nF of decoupling placed within 5 mm of the VDD1 pin. The secondary-side VCC2 rail needs 1 to 10 uF of bulk plus 100 nF HF decoupling.
Maintain at least 8 mm creepage between primary-side (VDD1, GND1, IN+, IN-, FLT_RDY) and secondary-side (VCC2, VSS2, OUT, DESAT) copper to preserve the 5700 Vrms isolation rating. Route the gate-drive loop on a single layer with the driver and SiC MOSFET gate pin physically adjacent - every additional nanohenry of loop inductance slows the 12 A transition and increases ringing. Place the DESAT blanking capacitor close to the DESAT pin to avoid false trips from switching noise.
Do not exceed VCC2 of +20V relative to VSS2 or VEE2 below -10V - the absolute maximum ratings are tight to avoid gate-oxide overstress on the SiC MOSFET. The Miller-clamp MOSFET (internal to the driver) needs a low-impedance return to the SiC MOSFET source for effective clamping - a shared Kelvin connection is recommended. Avoid 100% duty-cycle operation without adequate bootstrap refresh, or the high-side UVLO will trip on the next switching cycle.
규정 준수 정보
AEC-Q100 qualified for automotive applications. ISO 26262 ASIL D functional-safety ready per Infineon documentation. RoHS and REACH compliant. Halogen-free per industry-standard declaration.
