1N5711 vs 1N6263 비교
다음의 상세 나란히 비교: 1N5711 제조: STMicroelectronics 및 1N6263 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 1N5711 | 1N6263 |
|---|---|---|
| 브랜드 | STMicroelectronics | STMicroelectronics |
| 카테고리 | Diodes | Diodes |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.18 | $0.12 |
| Diode Type | Small-signal Schottky barrier (RF) diode | Small Signal Schottky (metal-to-silicon junction) |
| Peak Reverse Voltage (VRRM) | 70 V | — |
| Continuous Forward Current (IF) | 15 mA | — |
| Power Dissipation | 430 mW | 400 mW |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) | [DATA_NEEDED: forward voltage] |
| Total Capacitance | 2 pF | — |
| Junction Capacitance (Cj) | 1 pF | — |
| Dynamic Resistance | 35 ohm | — |
| Breakdown Voltage (VB) | 70 V | — |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) | — |
| Junction Structure | Metal-to-silicon junction with PN guard ring | — |
| 패키지 | DO-35 (DO-204AH) hermetic axial-lead glass | DO-35 (axial, through-hole glass) |
| 실장 유형 | Through-Hole | Through Hole |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | — |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current at rated VR] | — |
| RoHS 상태 | Compliant | [DATA_NEEDED: RoHS status] |
| Repetitive Peak Reverse Voltage (VRRM) | — | 60 V |
| Average Forward Current (IF) | — | 15 mA |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Junction Capacitance | — | [DATA_NEEDED: junction capacitance] |
| Reverse Recovery Time | — | Ultrafast (no stored charge, barrier-limited) |
| Surge Current Rating (IFSM) | — | [DATA_NEEDED: surge current] |
| Technology | — | Guard-ring Schottky barrier |
| Application Focus | — | UHF/VHF detection, pulse applications, broad dynamic range |
| Number of Elements | — | 1 |
| 동작 온도 범위 | — | [DATA_NEEDED: operating temperature range] |