1N5711 vs 1N6263 对比
详细并排对比 1N5711 出自 STMicroelectronics 和 1N6263 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1N5711 | 1N6263 |
|---|---|---|
| 品牌 | STMicroelectronics | STMicroelectronics |
| 分类 | Diodes | Diodes |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.18 | $0.12 |
| Diode Type | Small-signal Schottky barrier (RF) diode | Small Signal Schottky (metal-to-silicon junction) |
| Peak Reverse Voltage (VRRM) | 70 V | — |
| Continuous Forward Current (IF) | 15 mA | — |
| Power Dissipation | 430 mW | 400 mW |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) | [DATA_NEEDED: forward voltage] |
| Total Capacitance | 2 pF | — |
| Junction Capacitance (Cj) | 1 pF | — |
| Dynamic Resistance | 35 ohm | — |
| Breakdown Voltage (VB) | 70 V | — |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) | — |
| Junction Structure | Metal-to-silicon junction with PN guard ring | — |
| 封装 | DO-35 (DO-204AH) hermetic axial-lead glass | DO-35 (axial, through-hole glass) |
| 安装类型 | Through-Hole | Through Hole |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current at rated VR] | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Repetitive Peak Reverse Voltage (VRRM) | — | 60 V |
| Average Forward Current (IF) | — | 15 mA |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Junction Capacitance | — | [DATA_NEEDED: junction capacitance] |
| Reverse Recovery Time | — | Ultrafast (no stored charge, barrier-limited) |
| Surge Current Rating (IFSM) | — | [DATA_NEEDED: surge current] |
| Technology | — | Guard-ring Schottky barrier |
| Application Focus | — | UHF/VHF detection, pulse applications, broad dynamic range |
| Number of Elements | — | 1 |
| 工作温度范围 | — | [DATA_NEEDED: operating temperature range] |