2ED21064S06JXUMA1 vs 1ED3142MC12HXUMA1 비교

다음의 상세 나란히 비교: 2ED21064S06JXUMA1 제조: Infineon 및 1ED3142MC12HXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 2ED21064S06JXUMA1 1ED3142MC12HXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.85 $1.32
기능 High-Side and Low-Side Gate Driver —
Configuration Half-Bridge (2 outputs, non-inverting) Inverting, Non-Inverting
토폴로지 High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated —
Input Logic Compatibility 3.3 V / 5 V CMOS —
동작 온도 -40C to +125C —
패키지 PG-DSO-14 (14-pin SOIC) PG-DSO-8 (PG-LDSO-8-1)
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL level] —
RoHS 상태 ROHS3 Compliant —
Negative Gate Drive Robustness -0.7 V —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Technology — Coreless transformer (galvanic)
Isolation Voltage — 3000 Vrms
Number of Channels — 1
출력 수 — 2 (separate source/sink)
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Propagation Delay (typ.) — 40 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청