2EDN7524GXTMA1 vs 2ED21064S06JXUMA1 비교

다음의 상세 나란히 비교: 2EDN7524GXTMA1 제조: Infineon 및 2ED21064S06JXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 2EDN7524GXTMA1 2ED21064S06JXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.82 $0.85
Product Type Low-side gate driver IC —
Number of Channels 2 (dual) —
Drive Current (Source/Sink) 5 A peak —
Input Logic Non-inverting, TTL / 3.3 V CMOS-compatible —
Input Voltage Tolerance -10 V to +20 V on logic pins —
Supply Voltage (VCC) 4.5 V to 20 V [DATA_NEEDED: exact range] 10 V to 20 V
Propagation Delay 20 ns typical [DATA_NEEDED: exact figure] —
Channel-to-Channel Delay Matching 1 ns —
상승 시간 5 ns typical [DATA_NEEDED: exact test condition] —
하강 시간 5 ns typical [DATA_NEEDED: exact test condition] —
Output Stage Rail-to-rail, separate source/sink —
UVLO Protection Yes —
동작 온도 -40 C to +125 C -40C to +125C
패키지 PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad PG-DSO-14 (14-pin SOIC)
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS 상태 Compliant ROHS3 Compliant
Target Devices Standard MOSFETs, superjunction MOSFETs, GaN HEMTs —
기능 — High-Side and Low-Side Gate Driver
Configuration — Half-Bridge (2 outputs, non-inverting)
토폴로지 — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Negative Gate Drive Robustness — -0.7 V

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