BSC011N03LSTATMA1 vs ISC011N04NM7VATMA1 비교
다음의 상세 나란히 비교: BSC011N03LSTATMA1 제조: Infineon 및 ISC011N04NM7VATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC011N03LSTATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | NRND | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.55 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 39 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 1.1 mOhm (typical 0.9 mOhm) | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) typ | 72 nC | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 115 W | — |
| 동작 접합 온도 | -55C to +150C | — |
| 패키지 | PG-TDSON-8 FL (8-pin, exposed drain pad) | PG-TDSON-8 (source-down) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | Trench MOSFET, silicon |
| Configuration | Single with built-in diode | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| RoHS 상태 | Compliant | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| 동작 온도 범위 | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |