BSC011N03LSTATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of BSC011N03LSTATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ Active

Specification Comparison

Parameter BSC011N03LSTATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status NRND Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25C 39 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 1.1 mOhm (typical 0.9 mOhm) —
Gate-Source Threshold Voltage VGS(th) typ 2 V —
Gate-Source Voltage (VGS) max +/-20 V —
Total Gate Charge (Qg) typ 72 nC —
Power Dissipation at TA=25C 3 W —
Power Dissipation at TC=25C 115 W —
Operating Junction Temperature -55C to +150C —
Package PG-TDSON-8 FL (8-pin, exposed drain pad) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
Technology Trench MOSFET Trench MOSFET, silicon
Configuration Single with built-in diode —
MSL Level [DATA_NEEDED: MSL rating] MSL 1 (per JEDEC J-STD-020)
RoHS Status Compliant —
Product Family — OptiMOS 7 Power-Transistor
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
Operating Temperature Range — -55 °C to +175 °C (TJ)
RoHS Compliance — Compliant (per Infineon product page)

Datasheets & Resources

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