BSC015NE2LS5IATMA1 vs BSZ018NE2LSIATMA1 비교
다음의 상세 나란히 비교: BSC015NE2LS5IATMA1 제조: Infineon 및 BSZ018NE2LSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC015NE2LS5IATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.69 | $0.39 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at Ta | 33 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 50 W | — |
| 패키지 | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 8 | — |
| Technology | OptiMOS 5 trench | OptiMOS (Infineon trench MOSFET) |
| 동작 온도 범위 | -55C to +150C (junction) | -55 C to +150 C |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | — |
| Part Number | — | BSZ018NE2LSIATMA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at Ta=25C | — | 22 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | — | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 69 W |
| Lead-Free | — | Yes |