BSC019N04LSTATMA1 vs BSC026N04LSATMA1 비교
다음의 상세 나란히 비교: BSC019N04LSTATMA1 제조: Infineon 및 BSC026N04LSATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC019N04LSTATMA1 | BSC026N04LSATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.21 | $0.78 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | Trench-gate OptiMOS™ 5 |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A | — |
| Continuous Drain Current (ID, Ta=25C) | 28 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | [DATA_NEEDED: max RDS(on)] |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | — |
| Total Gate Charge Qg typ | 85 nC | — |
| Power Dissipation PD (Tc=25C) | 94 W | — |
| 동작 온도 범위 | -55 C to +150 C | -55°C to +150°C |
| 패키지 | TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-6 (TDSON 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (unlimited) | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS™ 5 N-Channel Power MOSFET |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 23 A |
| Continuous Drain Current (ID, Tc=25°C) | — | 100 A |
| Pulsed Drain Current (IDM, Tc=25°C) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 2.6 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 63 W |
| Channel Type | — | N-Channel |