BSC0911NDATMA1 vs IPD031N03LGATMA1 비교
다음의 상세 나란히 비교: BSC0911NDATMA1 제조: Infineon 및 IPD031N03LGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC0911NDATMA1 | IPD031N03LGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.46 | $0.41 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Configuration | Dual N-Channel (2 N-CH) | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) | 18 A | — |
| Pulsed Drain Current (IDM) | 30 A | — |
| Power Dissipation (PD) | 1 W | — |
| 패키지 | PG-TISON-8 (8-PowerTDFN) | PG-TO252-3-11 (DPAK-2) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -55C to +150C (junction) | -55 °C to +175 °C (junction) |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | OptiMOS trench MOSFET | MOSFET (Metal Oxide), OptiMOS 3 |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | 1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ 25 °C | — | 90 A (Tc) |
| Power Dissipation (Pd) | — | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | — | 3.1 mΩ |
| RDS(on) Max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) @ 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical/max] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 4.5 V, 10 V |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical @ 10V Vgs] |
| Output Charge (Qoss) | — | Ultra low (per datasheet tagline) |
| Mounting Tab | — | Drain (electrically connected) |
| Avalanche Energy Rated | — | Yes (per OptiMOS 3 datasheet family) |