BSC0911NDATMA1 vs IPD031N03LGATMA1 Comparison
Detailed side-by-side comparison of BSC0911NDATMA1 by Infineon and IPD031N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0911NDATMA1
BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon
BSC0911NDATMA1 β ActiveInfineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 β ActiveSpecification Comparison
| Parameter | BSC0911NDATMA1 | IPD031N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 25V | β |
| Configuration | Dual N-Channel (2 N-CH) | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) | 18 A | β |
| Pulsed Drain Current (IDM) | 30 A | β |
| Power Dissipation (PD) | 1 W | β |
| Package | PG-TISON-8 (8-PowerTDFN) | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | -55 Β°C to +175 Β°C (junction) |
| Channel Type | N-Channel Enhancement Mode | β |
| Technology | OptiMOS trench MOSFET | MOSFET (Metal Oxide), OptiMOS 3 |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ 25 Β°C | β | 90 A (Tc) |
| Power Dissipation (Pd) | β | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | β | 3.1 mΞ© |
| RDS(on) Max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) @ 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical/max] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | β | 4.5 V, 10 V |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical @ 10V Vgs] |
| Output Charge (Qoss) | β | Ultra low (per datasheet tagline) |
| Mounting Tab | β | Drain (electrically connected) |
| Avalanche Energy Rated | β | Yes (per OptiMOS 3 datasheet family) |