BSC117N08NS5ATMA1 vs IAUC100N10S5N040ATMA1 비교
다음의 상세 나란히 비교: BSC117N08NS5ATMA1 제조: Infineon 및 IAUC100N10S5N040ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ 활성사양 비교
| 파라미터 | BSC117N08NS5ATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.46 | $1.62 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC117N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS-5 |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 50 W | — |
| 패키지 | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg value] |
| 동작 온도 범위 | -55 C to +150 C (typical MOSFET junction) | -55C to +175C (junction) |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 레벨 | 1 | MSL1 (up to 260C peak reflow) |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25C | — | 100 A (package-limited) |
| Pulsed Drain Current (IDM) | — | 400 A |
| RDS(on) max @ VGS=10V | — | 4 mΩ |
| Maximum Power Dissipation (PD) | — | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.9 K/W |
| Automotive Qualification | — | AEC-Q100 qualified |
| Avalanche Rating | — | 100% Avalanche tested |
| AOI Compatibility | — | Feasible for Automatic Optical Inspection |