BSC117N08NS5ATMA1 vs IAUC100N10S5N040ATMA1 Comparison

Detailed side-by-side comparison of BSC117N08NS5ATMA1 by Infineon and IAUC100N10S5N040ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 ✓ Active

Specification Comparison

Parameter BSC117N08NS5ATMA1 IAUC100N10S5N040ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number BSC117N08NS5ATMA1 —
Technology OptiMOS 5 OptiMOS-5
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) max 49 A (Tc) —
On-State Resistance (RDS(on)) max 11.7 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 50 W —
Package PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
Mounting Type Surface Mount Surface Mount
Pin Count 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg value]
Operating Temperature Range -55 C to +150 C (typical MOSFET junction) -55C to +175C (junction)
RoHS Status Compliant Compliant
Lead-Free Yes —
MSL Level 1 MSL1 (up to 260C peak reflow)
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
Pulsed Drain Current (IDM) — 400 A
RDS(on) max @ VGS=10V — 4 mΩ
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
Automotive Qualification — AEC-Q100 qualified
Avalanche Rating — 100% Avalanche tested
AOI Compatibility — Feasible for Automatic Optical Inspection

Datasheets & Resources

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