BSS87H6327FTSA1 vs BSL308CH6327XTSA1 비교

다음의 상세 나란히 비교: BSS87H6327FTSA1 제조: Infineon 및 BSL308CH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSS87H6327FTSA1 BSL308CH6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.18 $0.21
FET Type N-Channel enhancement-mode —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 260 mA (Ta) —
Power Dissipation (PD) 1 W (Ta) —
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical value]
패키지 PG-SOT89-4-2 (SOT-89) PG-TSOP6-6 (TSOP-6, 6 pins)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +150C (junction) -55 °C to +150 °C
핀 수 3 (Gate / Drain / Source) —
Automotive Qualification AEC-Q101 qualified —
RoHS 상태 Compliant Compliant
Lead-Free / Pb-Free Yes (Pb-free plating) —
MSL 레벨 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Process Technology Vertical DMOS —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ low-voltage power MOSFETs
Configuration — Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Total Power Dissipation (Ptot) — 500 mW
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
Lead-Free — Yes
할로겐 프리 — Yes (per Infineon product family convention)

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