BSS87H6327FTSA1 vs BSL308CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSS87H6327FTSA1 by Infineon and BSL308CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS87H6327FTSA1 BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 βœ“ Active
Infineon
BSL308CH6327XTSA1 BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSS87H6327FTSA1 BSL308CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.18 $0.21
FET Type N-Channel enhancement-mode β€”
Drain-Source Voltage (VDS) 240 V β€”
Continuous Drain Current (ID) 260 mA (Ta) β€”
Power Dissipation (PD) 1 W (Ta) β€”
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V β€”
Gate-Source Voltage (VGS) +/-20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical value]
Package PG-SOT89-4-2 (SOT-89) PG-TSOP6-6 (TSOP-6, 6 pins)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55 Β°C to +150 Β°C
Pin Count 3 (Gate / Drain / Source) β€”
Automotive Qualification AEC-Q101 qualified β€”
RoHS Status Compliant Compliant
Lead-Free / Pb-Free Yes (Pb-free plating) β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Process Technology Vertical DMOS β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOSβ„’ low-voltage power MOSFETs
Configuration β€” Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) β€” 30 V
Continuous Drain Current - N-channel (ID, N-ch) β€” 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) β€” 2 A
Total Power Dissipation (Ptot) β€” 500 mW
On-State Resistance N-channel (RDS(on) @ VGS=10V) β€” [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) β€” [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) β€” 5 nC @ 10 V
Input Capacitance (Ciss) β€” 18 pF
Automotive Qualified β€” Yes (per Infineon part-number suffix, automotive grade)
Lead-Free β€” Yes
Halogen-Free β€” Yes (per Infineon product family convention)

Datasheets & Resources

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