BSZ0904NSIATMA1 vs BSZ0901NSIATMA1 비교

다음의 상세 나란히 비교: BSZ0904NSIATMA1 제조: Infineon 및 BSZ0901NSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSZ0904NSIATMA1 BSZ0901NSIATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.49 $0.34
Technology OptiMOS (N-channel power MOSFET) OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at Ta=25C 18 A 25 A
Continuous Drain Current (ID) at Tc=25C 40 A 40 A
On-State Resistance RDS(on) max at VGS=4.5V 4 mOhm —
On-State Resistance RDS(on) max at VGS=10V [DATA_NEEDED: RDS(on) at VGS=10V] —
Power Dissipation at Ta 2.1 W —
Power Dissipation at Tc 37 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: gate threshold voltage]
동작 온도 범위 -55C to +150C -55 C to +150 C (typical MOSFET range)
패키지 PG-TSDSON-8-FL (PQFN 3.3x3.3) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
실장 유형 Surface Mount Surface Mount
Integrated Schottky-like Diode Yes (monolithic) —
Avalanche Rated 100% avalanche tested —
Qualification JEDEC qualified for target applications —
Lead Plating Pb-free —
RoHS 상태 Compliant Compliant
할로겐 프리 Yes —
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
FET Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
핀 수 — 8
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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