EP2SGX30CF780C6 vs EP2SGX30CF780I4N 비교
다음의 상세 나란히 비교: EP2SGX30CF780C6 제조: Intel 및 EP2SGX30CF780I4N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP2SGX30CF780C6 | EP2SGX30CF780I4N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | NRND | NRND |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $165.00 | $138.00 |
| Family | Stratix II GX | Stratix II GX |
| Series | EP2SGX | — |
| Logic Elements (LE) | 33,880 | — |
| Adaptive Logic Modules (ALM) | 13,540 | — |
| Embedded Memory Bits | 1,369,728 bits (171 KBytes) | — |
| Embedded Multiplier 18x18 | 64 (estimated, datasheet required for exact count) | — |
| User I/O Pins | 361 | — |
| High-Speed Transceivers | Up to 8 channels (FPGA-dependent configuration) | — |
| Transceiver Data Rate | Up to 6.375 Gbps | — |
| 패키지 | 780-ball FineLine BGA (F780) | 780-ball FC-FBGA, 29 x 29 mm, 1.0 mm pitch |
| Speed Grade | C6 (commercial, mid-speed) | — |
| 동작 온도 | 0C to +85C (commercial) | -40C to +85C (Industrial) |
| Core Voltage | 1.2 V (typical) | — |
| Configuration Mode | Enhanced passive/active (EPC) supported | — |
| Process Technology | 90 nm | 90 nm CMOS |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Lead-Free | [DATA_NEEDED: lead-free status] | Yes |
| Logic Elements | — | 33,880 |
| Logic Cells / CLBs | — | 33,880 |
| Core Supply Voltage | — | 1.15 V to 1.25 V |
| Maximum Internal Frequency | — | 622.08 MHz |
| Embedded Transceivers | — | 4 channels (up to 3.125 Gbps at C4) |
| Pin / Terminal Count | — | 780 |
| 실장 유형 | — | Surface Mount (BGA) |
| 메모리 유형 | — | Embedded SRAM, external DDR/DDR2/QDR support |
| Configuration | — | JTAG / passive serial / fast passive parallel |