EP3C40F780C8 vs EP3C40F780I8N 비교
다음의 상세 나란히 비교: EP3C40F780C8 제조: Intel 및 EP3C40F780I8N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP3C40F780C8 | EP3C40F780I8N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $99.95 | $192.00 |
| Family | Cyclone III | Cyclone III |
| Series | EP3C40 | — |
| Logic Elements | 39,600 | — |
| Total Memory Bits | 1,161,216 bits (1134 Kbit) | — |
| Embedded Memory | M9K blocks, 486 Kbit total (per family datasheet) | — |
| Embedded 18x18 Multipliers | 126 | — |
| General Purpose PLLs | 4 | — |
| Global Clock Networks | 20 | — |
| Maximum User I/O Pins | 535 | — |
| Process Technology | 65 nm low-power CMOS | TSMC 65 nm low-power CMOS |
| 패키지 | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (F780) |
| Speed Grade | C8 (commercial, -40C to +85C operating range per 'C' designator family convention) | — |
| User I/O Banks | [DATA_NEEDED: user I/O bank count] | — |
| Supported Memory Interfaces | DDR, DDR2, QDRII SRAM (via dedicated PHY) | — |
| Configuration | Serial (AS) / Parallel (AP) / JTAG | — |
| RoHS 상태 | Compliant | Compliant |
| 실장 유형 | Surface Mount (BGA) | Surface Mount (BGA) |
| Device Logic Elements | — | 39,600 |
| Logic Array Blocks (LABs/CLBs) | — | 2,475 |
| Embedded Memory (bits) | — | 1,161,216 |
| Embedded Memory (Kbits) | — | 1,134 |
| Embedded Multipliers (18x18) | — | 126 |
| Number of PLLs | — | 4 |
| User I/O Pins | — | 535 |
| I/O Banks | — | 20 |
| Nominal Core Supply Voltage | — | 1.2 V (1.15 V to 1.25 V) |
| Package Ball Pitch | — | 1.0 mm |
| Operating Temperature Grade | — | Industrial (-40 °C to +100 °C junction) |
| Configuration Modes | — | Passive Serial, Active Serial (EPCS), JTAG, Fast Passive Parallel |
| MSL 레벨 | — | 3 |