EP4CGX110DF31I7 vs EP4CGX110DF31C8N 비교
다음의 상세 나란히 비교: EP4CGX110DF31I7 제조: Intel 및 EP4CGX110DF31C8N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP4CGX110DF31I7 | EP4CGX110DF31C8N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $276.34 | $325.00 |
| Series | Cyclone IV GX | — |
| Device Logic Elements | 109,424 | — |
| Total Memory Bits | 5,621,760 | — |
| Number of Logic Array Blocks (LABs) | Not specified in provided data [DATA_NEEDED: LAB count] | — |
| Number of I/O | 475 user I/O | — |
| Multipliers (18x18) | 432 | — |
| PLLs | 4 | 4 general-purpose PLLs |
| Transceivers | 8 (up to 3.125 Gbps) | 8 high-speed transceivers up to 3.125 Gbps |
| M9K Memory Blocks | 270 | — |
| 패키지 | 896-BGA (FBGA-896), 31 mm | 896-ball FineLine BGA (F31), 31 mm |
| Ball Pitch | 0.8 mm | — |
| Speed Grade | -7 | 8 |
| Temperature Grade | Industrial (-40C to +100C Tj) | — |
| Core Voltage | 1.2 V typical | — |
| Configuration Method | SRAM (EPCS or JTAG) | — |
| 실장 유형 | Surface Mount | — |
| MSL 레벨 | 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days] | — |
| RoHS 상태 | Compliant | Compliant |
| Family | — | Cyclone IV GX |
| Logic Elements | — | 109,424 |
| Logic Array Blocks (LABs) | — | 6,839 |
| Embedded Memory Bits | — | 5,621,760 (approximately 702 Kbits) |
| Embedded Memory Blocks | — | M9K blocks, 9-bit parity |
| DSP Blocks (18x18 Multipliers) | — | 264 multipliers |
| Maximum User I/Os | — | 475 |
| I/O Banks | — | 8 |
| PCI Express Hard IP | — | PCIe Gen1/Gen2 x1/x2/x4 |
| Core Supply Voltage | — | 1.2 V |
| Process Technology | — | 60 nm low-power CMOS |
| Operating Temperature (Commercial) | — | 0C to 85C |
| Configuration | — | SRAM-based, supports AS, PS, JTAG, FPP |