EPM570F256C3N vs EPM570F256C3 비교

다음의 상세 나란히 비교: EPM570F256C3N 제조: Intel 및 EPM570F256C3 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 EPM570F256C3N EPM570F256C3
브랜드 Intel Intel
카테고리 FPGA & CPLD FPGA & CPLD
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $13.75 $14.85
Family MAX II MAX II
Logic Elements (LEs) 570 —
Equivalent Macrocells 440 —
User Flash Memory (UFM) 8 Kbits —
Maximum Operating Frequency 304 MHz 304 MHz
Process Technology 0.18 um, 6-layer-metal flash CMOS 0.18 µm
Core Voltage 2.5 V / 3.3 V —
I/O Voltage Support (MultiVolt) 1.5 V, 1.8 V, 2.5 V, 3.3 V —
패키지 256-ball FBGA (FineLine BGA) 256-FBGA (FineLine BGA) 17 × 17 mm
User I/O Count [DATA_NEEDED: confirm exact user-IO count for F256 package] 80 (max for F256 package)
Operating Temperature (C3 grade) 0 C to +85 C (commercial) —
Programming Interface JTAG (IEEE 1532 / IEEE 1149.1) + ISP JTAG (IEEE 1149.1) - ISP
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL level not stated in provided data] —
RoHS 상태 Compliant (per DigiKey listing) Compliant
Lead-Free Yes (per suffix 'N' convention) Yes
Typical Macroscopic Functions Glue logic, bus bridging, I/O expansion, power sequencing —
Device Type — CPLD (Complex Programmable Logic Device)
Logic Elements / Macro Cells — 440 Logic Elements (~570 macro cells equivalent)
Propagation Delay (tPD) — [DATA_NEEDED: tPD in ns]
User Flash Memory — 8 Kbits
Supply Voltage - Core — 2.5 V / 3.3 V (MultiVolt core)
Supply Voltage - I/O — 1.8 V / 2.5 V / 3.3 V (MultiVolt I/O)
Configuration Memory — Non-volatile on-chip flash
동작 온도 — Commercial: 0 °C to +85 °C (C3 grade)
Design Software — Quartus II / Quartus Prime (legacy support)

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