IAUCN04S7N015GATMA1 vs IAUCN04S7L042GATMA1 비교

다음의 상세 나란히 비교: IAUCN04S7N015GATMA1 제조: Infineon 및 IAUCN04S7L042GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ 활성

사양 비교

파라미터 IAUCN04S7N015GATMA1 IAUCN04S7L042GATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.21 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7 40V
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 165 A (Tc) —
Power Dissipation (P_D) 96 W (Tc) —
R_DS(on) max 1.53 mΩ at V_GS=10 V —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
패키지 PG-THSOG-4-1 (SSO4G 5x6) surface mount PG-THSOG-4 (SSO4G 5x6) leaded surface mount
동작 접합 온도 -55C to +175C —
Automotive Qualification AEC-Q101 qualified —
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
RoHS 상태 Compliant Compliant
실장 유형 Surface Mount (IMS-compatible source-down) Surface Mount (IMS substrate / FR4 with thermal vias)
MSL 레벨 1 (per JEDEC J-STD-020) 1
Technology — Trench N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
동작 온도 범위 — -55C to +175C (Tj)
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

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