IAUCN08S7N024TATMA1 vs IAUCN04S7N037GATMA1 비교
다음의 상세 나란히 비교: IAUCN08S7N024TATMA1 제조: Infineon 및 IAUCN04S7N037GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUCN08S7N024TATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.45 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 7 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tj | 165 A | — |
| Power Dissipation (Pd) at Tc | 157 W | — |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | — |
| 패키지 / 케이스 | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) | — |
| 실장 유형 | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Cooling | Top-side cooled | — |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: junction/ambient temperature limits] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS 상태 | Compliant | Compliant |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | [DATA_NEEDED: Ciss] |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| 패키지 | — | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| MSL 레벨 | — | [DATA_NEEDED: MSL level] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |