IGW40N120H3FKSA1 vs IHW40N120R5XKSA1 비교
다음의 상세 나란히 비교: IGW40N120H3FKSA1 제조: Infineon 및 IHW40N120R5XKSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IGW40N120H3FKSA1 | IHW40N120R5XKSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | IGBTs | IGBTs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $4.07 | $3.50 |
| Manufacturer | Infineon Technologies | — |
| Series | TRENCHSTOP™ IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | — |
| Current - Collector (Ic) Max | 80 A | — |
| Current - Collector Pulsed (Icm) | 160 A | — |
| Power - Max | 483 W | — |
| Gate Charge (Qg) | 185 nC | — |
| Input Type | Standard | — |
| Operating Temperature (TJ) | -40 °C to +175 °C | — |
| 실장 유형 | Through Hole | Through Hole |
| 패키지 / 케이스 | PG-TO247-3-1 (TO-247-3) | — |
| Packaging | Tube | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance status] | — |
| Continuous Collector Current (Ic) | 40 A (per Infineon product page) | — |
| Collector-Emitter Voltage (VCE) | — | 1200 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Pulsed Collector Current (ICM) | — | 160 A |
| Maximum Power Dissipation (Ptot) | — | 394 W |
| Gate-Emitter Voltage (VGE) | — | +/-20 V |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | — | [DATA_NEEDED: typical VCE(sat) value] |
| Integrated Anti-Parallel Diode | — | Yes (monolithic reverse-conducting) |
| Technology | — | Trench Field Stop, Reverse-Conducting RC-H5 |
| 패키지 | — | TO-247-3 (PG-TO247-3) through-hole |
| 동작 접합 온도 | — | -40C to +175C |
| Storage Temperature | — | -55C to +150C |
| Soldering Temperature (max 10s) | — | 260 C |
| Switching Application | — | Resonant / soft switching (induction cooking optimized) |
| RoHS Compliance | — | Compliant |
| 할로겐 프리 | — | Yes |
| MSL 레벨 | — | N/A (through-hole) |