IGW40N120H3FKSA1 vs IHW40N120R5XKSA1 Comparison
Detailed side-by-side comparison of IGW40N120H3FKSA1 by Infineon and IHW40N120R5XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IGW40N120H3FKSA1 | IHW40N120R5XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | IGBTs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Series | TRENCHSTOP™ IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | — |
| Current - Collector (Ic) Max | 80 A | — |
| Current - Collector Pulsed (Icm) | 160 A | — |
| Power - Max | 483 W | — |
| Gate Charge (Qg) | 185 nC | — |
| Input Type | Standard | — |
| Operating Temperature (TJ) | -40 °C to +175 °C | — |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | PG-TO247-3-1 (TO-247-3) | — |
| Packaging | Tube | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance status] | — |
| Continuous Collector Current (Ic) | 40 A (per Infineon product page) | — |
| Collector-Emitter Voltage (VCE) | — | 1200 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Pulsed Collector Current (ICM) | — | 160 A |
| Maximum Power Dissipation (Ptot) | — | 394 W |
| Gate-Emitter Voltage (VGE) | — | +/-20 V |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | — | [DATA_NEEDED: typical VCE(sat) value] |
| Integrated Anti-Parallel Diode | — | Yes (monolithic reverse-conducting) |
| Technology | — | Trench Field Stop, Reverse-Conducting RC-H5 |
| Package | — | TO-247-3 (PG-TO247-3) through-hole |
| Operating Junction Temperature | — | -40C to +175C |
| Storage Temperature | — | -55C to +150C |
| Soldering Temperature (max 10s) | — | 260 C |
| Switching Application | — | Resonant / soft switching (induction cooking optimized) |
| RoHS Compliance | — | Compliant |
| Halogen Free | — | Yes |
| MSL Level | — | N/A (through-hole) |